DE60317586D1 - Verfahren zur Herstellung von mehrschichtigen, halbleitenden Nanopartikeln und und die nach diesem Verfahren erhaltenen mehrschichtigen, halbleitenden Nanopartikel - Google Patents

Verfahren zur Herstellung von mehrschichtigen, halbleitenden Nanopartikeln und und die nach diesem Verfahren erhaltenen mehrschichtigen, halbleitenden Nanopartikel

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Publication number
DE60317586D1
DE60317586D1 DE60317586T DE60317586T DE60317586D1 DE 60317586 D1 DE60317586 D1 DE 60317586D1 DE 60317586 T DE60317586 T DE 60317586T DE 60317586 T DE60317586 T DE 60317586T DE 60317586 D1 DE60317586 D1 DE 60317586D1
Authority
DE
Germany
Prior art keywords
multilayer
semiconducting nanoparticles
preparation
semiconducting
nanoparticles obtained
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60317586T
Other languages
English (en)
Other versions
DE60317586T2 (de
Inventor
Keiichi Sato
Susumu Kuwabata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Software Engineering Co Ltd
Original Assignee
Hitachi Software Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Software Engineering Co Ltd filed Critical Hitachi Software Engineering Co Ltd
Application granted granted Critical
Publication of DE60317586D1 publication Critical patent/DE60317586D1/de
Publication of DE60317586T2 publication Critical patent/DE60317586T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C3/00—Treatment in general of inorganic materials, other than fibrous fillers, to enhance their pigmenting or filling properties
    • C09C3/006—Combinations of treatments provided for in groups C09C3/04 - C09C3/12
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y5/00—Nanobiotechnology or nanomedicine, e.g. protein engineering or drug delivery
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C3/00—Treatment in general of inorganic materials, other than fibrous fillers, to enhance their pigmenting or filling properties
    • C09C3/06—Treatment with inorganic compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C3/00—Treatment in general of inorganic materials, other than fibrous fillers, to enhance their pigmenting or filling properties
    • C09C3/08—Treatment with low-molecular-weight non-polymer organic compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/51—Particles with a specific particle size distribution
    • C01P2004/52—Particles with a specific particle size distribution highly monodisperse size distribution
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
    • C01P2004/82—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases
    • C01P2004/84—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases one phase coated with the other
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y10S977/715—On an organic substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Molecular Biology (AREA)
  • Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Medical Informatics (AREA)
  • Medicinal Chemistry (AREA)
  • Biotechnology (AREA)
  • Pharmacology & Pharmacy (AREA)
  • Biophysics (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • General Engineering & Computer Science (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Luminescent Compositions (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE60317586T 2002-02-05 2003-01-23 Verfahren zur Herstellen eines mehrschichtigen Halbleiter-Nanopartikels und einmehrschichtiger Halbleiter-Nanopartikel, hergestellt durch das Verfahren Expired - Lifetime DE60317586T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002028022A JP4113361B2 (ja) 2002-02-05 2002-02-05 複層半導体ナノ粒子の製造方法
JP2002028022 2002-02-05

Publications (2)

Publication Number Publication Date
DE60317586D1 true DE60317586D1 (de) 2008-01-03
DE60317586T2 DE60317586T2 (de) 2008-10-23

Family

ID=19192423

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60317586T Expired - Lifetime DE60317586T2 (de) 2002-02-05 2003-01-23 Verfahren zur Herstellen eines mehrschichtigen Halbleiter-Nanopartikels und einmehrschichtiger Halbleiter-Nanopartikel, hergestellt durch das Verfahren

Country Status (4)

Country Link
US (1) US6911082B2 (de)
EP (1) EP1333064B1 (de)
JP (1) JP4113361B2 (de)
DE (1) DE60317586T2 (de)

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JP4005850B2 (ja) * 2002-06-10 2007-11-14 日立ソフトウエアエンジニアリング株式会社 半導体ナノ粒子製造方法
JP3847677B2 (ja) * 2002-07-23 2006-11-22 日立ソフトウエアエンジニアリング株式会社 半導体ナノ粒子、その製造方法、及び半導体ナノ粒子蛍光試薬
JP4230741B2 (ja) * 2002-08-30 2009-02-25 日立ソフトウエアエンジニアリング株式会社 半導体ナノ粒子の精製方法
WO2005002007A2 (en) * 2003-03-20 2005-01-06 The Research Foundation Of State University Of Newyork Process for producing semiconductor nanocrystal cores, core-shell, core-buffer-shell, and multiple layer systems in a non-coordinating solvent utilizing in situ surfactant generation
JP5086517B2 (ja) * 2004-02-02 2012-11-28 株式会社日立ソリューションズ 半導体ナノ粒子製造方法
US7190264B2 (en) * 2004-03-05 2007-03-13 Simon Fraser University Wireless computer monitoring device with automatic arming and disarming
CN1232608C (zh) * 2004-04-06 2005-12-21 中国科学院长春应用化学研究所 在液－液界面上纳米半导体发光材料的合成方法
KR100621309B1 (ko) * 2004-04-20 2006-09-14 삼성전자주식회사 황 전구체로서 싸이올 화합물을 이용한 황화 금속나노결정의 제조방법
WO2006009124A1 (ja) * 2004-07-16 2006-01-26 National Institute Of Advanced Industrial Science And Technology 蛍光体、及びその製造方法
US7340957B2 (en) 2004-07-29 2008-03-11 Los Alamos National Security, Llc Ultrasonic analyte concentration and application in flow cytometry
WO2006023612A2 (en) * 2004-08-19 2006-03-02 Zetetic Institute Sub-nanometer overlay, critical dimension, and lithography tool projection optic metrology systems based on measurement of exposure induced changes in photoresist on wafers
JP2006104411A (ja) 2004-10-08 2006-04-20 Sharp Corp 蛍光体、その製造方法およびこれを用いた発光装置
CN1325577C (zh) * 2004-12-03 2007-07-11 中国科学院长春应用化学研究所 合成有机包覆剂包覆的二氧化钛纳米粒子的方法
US7625835B2 (en) * 2005-06-10 2009-12-01 Gm Global Technology Operations, Inc. Photocatalyst and use thereof
US20070037365A1 (en) * 2005-08-15 2007-02-15 Ranganath Tirumala R Semiconductor nanostructures and fabricating the same
KR100745744B1 (ko) * 2005-11-11 2007-08-02 삼성전기주식회사 나노 입자 코팅 방법
US20090218551A1 (en) * 2005-11-29 2009-09-03 Suvankar Sengupta Bulk thermoelectric compositions from coated nanoparticles
US7835000B2 (en) 2006-11-03 2010-11-16 Los Alamos National Security, Llc System and method for measuring particles in a sample stream of a flow cytometer or the like
ATE538377T1 (de) 2007-04-02 2012-01-15 Acoustic Cytometry Systems Inc Verfahren zur verbesserten analyse von in einem akustischen feld fokussierten zellen und partikeln
US8083068B2 (en) 2007-04-09 2011-12-27 Los Alamos National Security, Llc Apparatus for separating particles utilizing engineered acoustic contrast capture particles
US7837040B2 (en) * 2007-04-09 2010-11-23 Los Alamos National Security, Llc Acoustic concentration of particles in fluid flow
US8263407B2 (en) 2007-10-24 2012-09-11 Los Alamos National Security, Llc Method for non-contact particle manipulation and control of particle spacing along an axis
US8528406B2 (en) * 2007-10-24 2013-09-10 Los Alamos National Security, LLP Method for non-contact particle manipulation and control of particle spacing along an axis
US8266950B2 (en) 2007-12-19 2012-09-18 Los Alamos National Security, LLP Particle analysis in an acoustic cytometer
CN102264630B (zh) * 2008-10-24 2016-10-19 生命科技公司 稳定的纳米粒子以及制造和使用这种粒子的方法
KR101942966B1 (ko) 2011-08-18 2019-01-29 삼성전자주식회사 단분산 입자의 제조 방법, 이에 따라 제조된 단분산 입자 및 가변 광결정 소자
KR101968634B1 (ko) 2011-08-24 2019-04-15 삼성전자주식회사 고굴절률 나노 입자의 제조 방법, 이에 따라 제조된 나노 입자 및 나노 입자를 이용한 광결정 소자
US9593053B1 (en) 2011-11-14 2017-03-14 Hypersolar, Inc. Photoelectrosynthetically active heterostructures
CN103013520B (zh) * 2012-10-25 2014-06-18 深圳先进技术研究院 水溶性近红外量子点,其制备方法及应用
US10100415B2 (en) 2014-03-21 2018-10-16 Hypersolar, Inc. Multi-junction artificial photosynthetic cell with enhanced photovoltages
JP6606418B2 (ja) * 2015-01-29 2019-11-13 スタンレー電気株式会社 量子ドット集合体の製造方法
KR102342801B1 (ko) * 2016-05-25 2021-12-22 고려대학교 세종산학협력단 글라임 용매를 기반으로 하는 CdSe 코어를 포함하는 코어-쉘 구조 제조방법 및 이로부터 제조된 CdSe 코어를 포함하는 코어-쉘 구조

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Also Published As

Publication number Publication date
DE60317586T2 (de) 2008-10-23
US6911082B2 (en) 2005-06-28
US20030162393A1 (en) 2003-08-28
JP4113361B2 (ja) 2008-07-09
EP1333064A3 (de) 2005-03-09
EP1333064B1 (de) 2007-11-21
JP2003226521A (ja) 2003-08-12
EP1333064A2 (de) 2003-08-06

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