DE60313268D1 - Elektrooptische Anzeigevorrichtung und Methode zu deren Herstellung, die den Transfer eines Chips beinhaltet - Google Patents
Elektrooptische Anzeigevorrichtung und Methode zu deren Herstellung, die den Transfer eines Chips beinhaltetInfo
- Publication number
- DE60313268D1 DE60313268D1 DE60313268T DE60313268T DE60313268D1 DE 60313268 D1 DE60313268 D1 DE 60313268D1 DE 60313268 T DE60313268 T DE 60313268T DE 60313268 T DE60313268 T DE 60313268T DE 60313268 D1 DE60313268 D1 DE 60313268D1
- Authority
- DE
- Germany
- Prior art keywords
- electro
- chip
- transfer
- production
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/13613—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit the semiconductor element being formed on a first substrate and thereafter transferred to the final cell substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
- H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01025—Manganese [Mn]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01077—Iridium [Ir]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0494—4th Group
- H01L2924/04941—TiN
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002281856A JP5022552B2 (ja) | 2002-09-26 | 2002-09-26 | 電気光学装置の製造方法及び電気光学装置 |
JP2002281856 | 2002-09-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60313268D1 true DE60313268D1 (de) | 2007-05-31 |
DE60313268T2 DE60313268T2 (de) | 2008-01-03 |
Family
ID=31973320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60313268T Expired - Lifetime DE60313268T2 (de) | 2002-09-26 | 2003-09-12 | Elektrooptische Anzeigevorrichtung und Methode zu deren Herstellung, die den Transfer eines Chips beinhaltet |
Country Status (7)
Country | Link |
---|---|
US (2) | US7169652B2 (de) |
EP (1) | EP1403691B1 (de) |
JP (1) | JP5022552B2 (de) |
KR (2) | KR100563408B1 (de) |
CN (1) | CN1286148C (de) |
DE (1) | DE60313268T2 (de) |
TW (1) | TWI236135B (de) |
Families Citing this family (72)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5022552B2 (ja) * | 2002-09-26 | 2012-09-12 | セイコーエプソン株式会社 | 電気光学装置の製造方法及び電気光学装置 |
US7084045B2 (en) * | 2003-12-12 | 2006-08-01 | Seminconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US7351608B1 (en) * | 2004-08-19 | 2008-04-01 | The United States Of America As Represented By The Director Of The National Security Agency | Method of precisely aligning components in flexible integrated circuit module |
CN1945822B (zh) * | 2005-10-07 | 2012-05-23 | 日立麦克赛尔株式会社 | 半导体器件、半导体模块及半导体模块的制造方法 |
JP5004563B2 (ja) * | 2005-12-02 | 2012-08-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US8222116B2 (en) * | 2006-03-03 | 2012-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8173519B2 (en) | 2006-03-03 | 2012-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
KR100734403B1 (ko) * | 2006-06-02 | 2007-07-02 | 삼성전기주식회사 | 전자소자 패키지 및 그 제조방법 |
TWI424499B (zh) * | 2006-06-30 | 2014-01-21 | Semiconductor Energy Lab | 製造半導體裝置的方法 |
WO2008007300A1 (en) * | 2006-07-11 | 2008-01-17 | Koninklijke Philips Electronics N.V. | An improved electrode layout for a display |
JP4096985B2 (ja) * | 2006-07-14 | 2008-06-04 | セイコーエプソン株式会社 | 半導体装置の製造方法、半導体装置、及び電気光学装置 |
US7419757B2 (en) * | 2006-10-20 | 2008-09-02 | 3M Innovative Properties Company | Structured thermal transfer donors |
US20080181852A1 (en) * | 2007-01-29 | 2008-07-31 | Nitto Denko Corporation | Multi-functional Drug Carriers |
JP5076925B2 (ja) * | 2007-04-11 | 2012-11-21 | セイコーエプソン株式会社 | アクティブマトリクス基板、及びその製造方法、電気光学装置、電子機器 |
US20090033643A1 (en) * | 2007-07-30 | 2009-02-05 | Honeywell International, Inc. | Integrated display module |
FR2921201B1 (fr) * | 2007-09-19 | 2009-12-18 | Commissariat Energie Atomique | Procede de collage de puces sur un substrat de contrainte et procede de mise sous contrainte d'un circuit de lecture semi-conducteur |
US8201325B2 (en) | 2007-11-22 | 2012-06-19 | International Business Machines Corporation | Method for producing an integrated device |
TWI382381B (zh) * | 2008-03-06 | 2013-01-11 | Pervasive Display Co Ltd | 非揮發型顯示裝置 |
JP4614106B2 (ja) * | 2008-06-18 | 2011-01-19 | ソニー株式会社 | 自発光表示装置および電子機器 |
KR100997199B1 (ko) * | 2008-07-21 | 2010-11-29 | 삼성전기주식회사 | 전자소자 내장형 인쇄회로기판 제조방법 |
US7999454B2 (en) * | 2008-08-14 | 2011-08-16 | Global Oled Technology Llc | OLED device with embedded chip driving |
US8115380B2 (en) * | 2008-08-14 | 2012-02-14 | Global Oled Technology Llc | Display device with chiplets |
US7879691B2 (en) * | 2008-09-24 | 2011-02-01 | Eastman Kodak Company | Low cost die placement |
US8279145B2 (en) * | 2009-02-17 | 2012-10-02 | Global Oled Technology Llc | Chiplet driver pairs for two-dimensional display |
US8183765B2 (en) * | 2009-08-24 | 2012-05-22 | Global Oled Technology Llc | Controlling an electronic device using chiplets |
US8072437B2 (en) * | 2009-08-26 | 2011-12-06 | Global Oled Technology Llc | Flexible multitouch electroluminescent display |
US8557616B2 (en) * | 2009-12-09 | 2013-10-15 | Nano And Advanced Materials Institute Limited | Method for manufacturing a monolithic LED micro-display on an active matrix panel using flip-chip technology and display apparatus having the monolithic LED micro-display |
TWI409562B (zh) * | 2009-12-10 | 2013-09-21 | Au Optronics Corp | 電泳顯示裝置 |
KR101887856B1 (ko) * | 2010-04-09 | 2018-08-10 | 가부시키가이샤 니콘 | 디바이스 제조 장치 |
JP2012022168A (ja) * | 2010-07-15 | 2012-02-02 | Sony Corp | 有機el表示装置、有機el表示装置の製造方法、及び、電子機器 |
GB2484713A (en) * | 2010-10-21 | 2012-04-25 | Optovate Ltd | Illumination apparatus |
US9899329B2 (en) | 2010-11-23 | 2018-02-20 | X-Celeprint Limited | Interconnection structures and methods for transfer-printed integrated circuit elements with improved interconnection alignment tolerance |
US8934259B2 (en) | 2011-06-08 | 2015-01-13 | Semprius, Inc. | Substrates with transferable chiplets |
US8685761B2 (en) * | 2012-02-02 | 2014-04-01 | Harris Corporation | Method for making a redistributed electronic device using a transferrable redistribution layer |
WO2013150427A1 (en) * | 2012-04-05 | 2013-10-10 | Koninklijke Philips N.V. | Led thin-film device partial singulation prior to substrate thinning or removal |
DE102012109460B4 (de) * | 2012-10-04 | 2024-03-07 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines Leuchtdioden-Displays und Leuchtdioden-Display |
CN108447855B (zh) | 2012-11-12 | 2020-11-24 | 晶元光电股份有限公司 | 半导体光电元件的制作方法 |
US11325828B2 (en) * | 2013-02-22 | 2022-05-10 | Vibrant Composites Inc. | High-volume millimeter scale manufacturing |
KR20140126439A (ko) * | 2013-04-23 | 2014-10-31 | 삼성디스플레이 주식회사 | 투명 플렉시블 표시장치의 제조방법 및 이를 이용한 투명 플렉시블 표시장치 |
TWI552319B (zh) | 2014-05-23 | 2016-10-01 | 友達光電股份有限公司 | 顯示裝置 |
US20160093600A1 (en) * | 2014-09-25 | 2016-03-31 | X-Celeprint Limited | Compound micro-assembly strategies and devices |
US9799719B2 (en) | 2014-09-25 | 2017-10-24 | X-Celeprint Limited | Active-matrix touchscreen |
WO2017144573A1 (en) | 2016-02-25 | 2017-08-31 | X-Celeprint Limited | Efficiently micro-transfer printing micro-scale devices onto large-format substrates |
WO2018020333A1 (en) | 2016-07-29 | 2018-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Separation method, display device, display module, and electronic device |
TWI753868B (zh) | 2016-08-05 | 2022-02-01 | 日商半導體能源研究所股份有限公司 | 剝離方法、顯示裝置、顯示模組及電子裝置 |
TWI730017B (zh) | 2016-08-09 | 2021-06-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置的製造方法、顯示裝置、顯示模組及電子裝置 |
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-
2002
- 2002-09-26 JP JP2002281856A patent/JP5022552B2/ja not_active Expired - Fee Related
-
2003
- 2003-09-05 KR KR1020030061983A patent/KR100563408B1/ko not_active IP Right Cessation
- 2003-09-12 DE DE60313268T patent/DE60313268T2/de not_active Expired - Lifetime
- 2003-09-12 EP EP03255715A patent/EP1403691B1/de not_active Expired - Fee Related
- 2003-09-25 TW TW092126505A patent/TWI236135B/zh not_active IP Right Cessation
- 2003-09-26 US US10/670,275 patent/US7169652B2/en not_active Expired - Fee Related
- 2003-09-26 CN CNB031598552A patent/CN1286148C/zh not_active Expired - Fee Related
-
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- 2005-10-17 KR KR1020050097383A patent/KR100632827B1/ko not_active IP Right Cessation
-
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Also Published As
Publication number | Publication date |
---|---|
EP1403691B1 (de) | 2007-04-18 |
CN1494110A (zh) | 2004-05-05 |
CN1286148C (zh) | 2006-11-22 |
KR100563408B1 (ko) | 2006-03-23 |
US20040126911A1 (en) | 2004-07-01 |
US20070090368A1 (en) | 2007-04-26 |
JP5022552B2 (ja) | 2012-09-12 |
KR20050106366A (ko) | 2005-11-09 |
KR20040027321A (ko) | 2004-04-01 |
US7834359B2 (en) | 2010-11-16 |
DE60313268T2 (de) | 2008-01-03 |
KR100632827B1 (ko) | 2006-10-16 |
TWI236135B (en) | 2005-07-11 |
TW200414498A (en) | 2004-08-01 |
EP1403691A1 (de) | 2004-03-31 |
US7169652B2 (en) | 2007-01-30 |
JP2004119725A (ja) | 2004-04-15 |
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