DE60312203D1 - Schnellheizender durch erzwungene konvektion gestützter ofen - Google Patents

Schnellheizender durch erzwungene konvektion gestützter ofen

Info

Publication number
DE60312203D1
DE60312203D1 DE60312203T DE60312203T DE60312203D1 DE 60312203 D1 DE60312203 D1 DE 60312203D1 DE 60312203 T DE60312203 T DE 60312203T DE 60312203 T DE60312203 T DE 60312203T DE 60312203 D1 DE60312203 D1 DE 60312203D1
Authority
DE
Germany
Prior art keywords
earthed
convection
quick
heating oven
oven based
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60312203T
Other languages
English (en)
Other versions
DE60312203T2 (de
Inventor
Woo Sik Yoo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WaferMasters Inc
Original Assignee
WaferMasters Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WaferMasters Inc filed Critical WaferMasters Inc
Application granted granted Critical
Publication of DE60312203D1 publication Critical patent/DE60312203D1/de
Publication of DE60312203T2 publication Critical patent/DE60312203T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE60312203T 2002-11-05 2003-08-27 Schnellheizender durch erzwungene konvektion gestützter ofen Expired - Fee Related DE60312203T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US288729 2002-11-05
US10/288,729 US6952889B2 (en) 2002-11-05 2002-11-05 Forced convection assisted rapid thermal furnace
PCT/US2003/026822 WO2004044962A1 (en) 2002-11-05 2003-08-27 Forced convection assisted rapid thermal furnace

Publications (2)

Publication Number Publication Date
DE60312203D1 true DE60312203D1 (de) 2007-04-12
DE60312203T2 DE60312203T2 (de) 2007-11-15

Family

ID=32175958

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60312203T Expired - Fee Related DE60312203T2 (de) 2002-11-05 2003-08-27 Schnellheizender durch erzwungene konvektion gestützter ofen

Country Status (7)

Country Link
US (1) US6952889B2 (de)
EP (1) EP1559133B1 (de)
JP (1) JP2006505947A (de)
KR (1) KR100728408B1 (de)
DE (1) DE60312203T2 (de)
TW (1) TWI237293B (de)
WO (1) WO2004044962A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7431585B2 (en) * 2002-01-24 2008-10-07 Applied Materials, Inc. Apparatus and method for heating substrates
CN101894779B (zh) * 2003-08-29 2013-05-01 交叉自动控制公司 用于半导体处理的方法和装置
WO2007082396A1 (de) * 2006-01-18 2007-07-26 Oc Oerlikon Balzers Ag Vorrichtung zur entgasung eines scheibenförmigen substrates
DE102006010012B3 (de) * 2006-03-04 2007-04-12 Rittal Gmbh & Co. Kg Schaltschrank
US7877895B2 (en) * 2006-06-26 2011-02-01 Tokyo Electron Limited Substrate processing apparatus
KR101440911B1 (ko) * 2012-06-18 2014-09-18 주식회사 유진테크 기판증착장치
KR20180098448A (ko) 2017-02-24 2018-09-04 삼성전자주식회사 잔류 가스 제거 장치 및 이를 포함하는 기판 처리 설비
CN110608589B (zh) * 2019-10-21 2020-08-28 西安奕斯伟硅片技术有限公司 红外干燥装置
FI129948B (en) * 2021-05-10 2022-11-15 Picosun Oy SUBSTRATE PROCESSING APPARATUS AND METHOD
US11976369B2 (en) * 2021-07-06 2024-05-07 Destination 2D Inc. Low-temperature/BEOL-compatible highly scalable graphene synthesis tool

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4232063A (en) * 1978-11-14 1980-11-04 Applied Materials, Inc. Chemical vapor deposition reactor and process
JPS60200531A (ja) * 1984-03-26 1985-10-11 Hitachi Ltd 処理装置
JPS61190948A (ja) * 1985-02-20 1986-08-25 Hitachi Micro Comput Eng Ltd 膜形成装置
JPS6455821A (en) * 1987-08-26 1989-03-02 Dainippon Screen Mfg Rapid cooling type heat treating apparatus
JPH0744159B2 (ja) * 1987-09-11 1995-05-15 株式会社日立製作所 半導体ウエハの熱処理装置および熱処理方法
US5426271A (en) * 1994-01-18 1995-06-20 Honeywell Inc. Liquid level sensor
JPH07221037A (ja) * 1994-02-03 1995-08-18 Dainippon Screen Mfg Co Ltd 熱処理装置
JPH09260364A (ja) * 1996-03-26 1997-10-03 Tokyo Electron Ltd 熱処理方法および熱処理装置
US6183565B1 (en) * 1997-07-08 2001-02-06 Asm International N.V Method and apparatus for supporting a semiconductor wafer during processing
NL1003538C2 (nl) * 1996-07-08 1998-01-12 Advanced Semiconductor Mat Werkwijze en inrichting voor het contactloos behandelen van een schijfvormig halfgeleidersubstraat.
JP4071313B2 (ja) * 1996-12-13 2008-04-02 株式会社山形信越石英 ウエーハ熱処理装置
JPH11150077A (ja) * 1997-11-19 1999-06-02 Mitsumi Electric Co Ltd 半導体ウエハの熱拡散装置
JP3514969B2 (ja) * 1998-03-13 2004-04-05 株式会社東芝 半導体装置の製造方法及び半導体製造装置
NL1010003C2 (nl) * 1998-09-03 2000-03-13 Asm Int Reactor voorzien van verwarming.
KR100360401B1 (ko) * 2000-03-17 2002-11-13 삼성전자 주식회사 슬릿형 공정가스 인입부와 다공구조의 폐가스 배출부를포함하는 공정튜브 및 반도체 소자 제조장치
JP2001280855A (ja) * 2000-03-30 2001-10-10 Natl Inst Of Advanced Industrial Science & Technology Meti 材料処理方法及び加熱炉
US6644964B2 (en) * 2000-06-20 2003-11-11 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
JP3909222B2 (ja) * 2000-06-20 2007-04-25 東京エレクトロン株式会社 基板処理装置及び基板処理方法
NL1018086C2 (nl) * 2001-05-16 2002-11-26 Asm Int Werkwijze en inrichting voor het thermisch behandelen van substraten.
DE10132709A1 (de) * 2001-06-08 2002-12-12 Aixtron Ag Verfahren und Vorrichtung zur insbesondere kurzzeitigen thermischen Behandlung von insbesondere flachen Gegenständen

Also Published As

Publication number Publication date
DE60312203T2 (de) 2007-11-15
TW200407946A (en) 2004-05-16
TWI237293B (en) 2005-08-01
KR20050083837A (ko) 2005-08-26
US6952889B2 (en) 2005-10-11
JP2006505947A (ja) 2006-02-16
US20040083621A1 (en) 2004-05-06
EP1559133A1 (de) 2005-08-03
KR100728408B1 (ko) 2007-06-13
WO2004044962A1 (en) 2004-05-27
EP1559133B1 (de) 2007-02-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee