DE60310222D1 - Halbleiterkapselung und verfahren zu ihrer herstellung - Google Patents

Halbleiterkapselung und verfahren zu ihrer herstellung

Info

Publication number
DE60310222D1
DE60310222D1 DE60310222T DE60310222T DE60310222D1 DE 60310222 D1 DE60310222 D1 DE 60310222D1 DE 60310222 T DE60310222 T DE 60310222T DE 60310222 T DE60310222 T DE 60310222T DE 60310222 D1 DE60310222 D1 DE 60310222D1
Authority
DE
Germany
Prior art keywords
silicone member
production
semiconductor sealing
integrated circuit
active surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60310222T
Other languages
English (en)
Other versions
DE60310222T2 (de
Inventor
Stanton Dent
Lyndon Larson
Robert Nelson
Debra Soliz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of DE60310222D1 publication Critical patent/DE60310222D1/de
Application granted granted Critical
Publication of DE60310222T2 publication Critical patent/DE60310222T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/11Manufacturing methods
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    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329Insulating materials
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    • H01L2924/181Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
DE60310222T 2002-05-16 2003-03-19 Halbleiterkapselung und verfahren zu ihrer herstellung Expired - Lifetime DE60310222T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US68755 2002-05-16
US10/068,755 US6940177B2 (en) 2002-05-16 2002-05-16 Semiconductor package and method of preparing same
PCT/US2003/008345 WO2003098682A1 (en) 2002-05-16 2003-03-19 Semiconductor package and method of preparing same

Publications (2)

Publication Number Publication Date
DE60310222D1 true DE60310222D1 (de) 2007-01-18
DE60310222T2 DE60310222T2 (de) 2007-09-13

Family

ID=29418266

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60310222T Expired - Lifetime DE60310222T2 (de) 2002-05-16 2003-03-19 Halbleiterkapselung und verfahren zu ihrer herstellung

Country Status (9)

Country Link
US (1) US6940177B2 (de)
EP (1) EP1504469B1 (de)
JP (1) JP4773089B2 (de)
CN (1) CN1328770C (de)
AT (1) ATE347737T1 (de)
AU (1) AU2003230678A1 (de)
DE (1) DE60310222T2 (de)
TW (1) TWI265578B (de)
WO (1) WO2003098682A1 (de)

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US20040102022A1 (en) * 2002-11-22 2004-05-27 Tongbi Jiang Methods of fabricating integrated circuitry
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WO2006091793A1 (en) 2005-02-25 2006-08-31 Tessera, Inc. Microelectronic assemblies having compliancy
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JP6300218B2 (ja) 2010-12-31 2018-03-28 サムスン エスディアイ カンパニー, リミテッドSamsung Sdi Co., Ltd. 封止材用透光性樹脂組成物、該透光性樹脂を含む封止材および電子素子
TWI575684B (zh) * 2011-06-13 2017-03-21 矽品精密工業股份有限公司 晶片尺寸封裝件
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US6940177B2 (en) 2005-09-06
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ATE347737T1 (de) 2006-12-15
JP4773089B2 (ja) 2011-09-14
WO2003098682A1 (en) 2003-11-27
EP1504469A1 (de) 2005-02-09
DE60310222T2 (de) 2007-09-13
CN1666326A (zh) 2005-09-07
US20030214051A1 (en) 2003-11-20
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JP2005526398A (ja) 2005-09-02
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