DE60306579D1 - Verstärkungsgekoppelter Halbleiterlaser mit verminderter Blauverschiebung - Google Patents

Verstärkungsgekoppelter Halbleiterlaser mit verminderter Blauverschiebung

Info

Publication number
DE60306579D1
DE60306579D1 DE60306579T DE60306579T DE60306579D1 DE 60306579 D1 DE60306579 D1 DE 60306579D1 DE 60306579 T DE60306579 T DE 60306579T DE 60306579 T DE60306579 T DE 60306579T DE 60306579 D1 DE60306579 D1 DE 60306579D1
Authority
DE
Germany
Prior art keywords
gain
semiconductor laser
blue shift
coupled semiconductor
reduced blue
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60306579T
Other languages
English (en)
Other versions
DE60306579T2 (de
Inventor
Ekawa Mitsuru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE60306579D1 publication Critical patent/DE60306579D1/de
Publication of DE60306579T2 publication Critical patent/DE60306579T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE60306579T 2002-04-23 2003-04-11 Verstärkungsgekoppelter Halbleiterlaser mit verminderter Blauverschiebung Expired - Lifetime DE60306579T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002120152A JP3863454B2 (ja) 2002-04-23 2002-04-23 半導体レーザ装置
JP2002120152 2002-04-23

Publications (2)

Publication Number Publication Date
DE60306579D1 true DE60306579D1 (de) 2006-08-17
DE60306579T2 DE60306579T2 (de) 2006-11-09

Family

ID=29207992

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60306579T Expired - Lifetime DE60306579T2 (de) 2002-04-23 2003-04-11 Verstärkungsgekoppelter Halbleiterlaser mit verminderter Blauverschiebung

Country Status (4)

Country Link
US (1) US6853661B2 (de)
EP (1) EP1363368B1 (de)
JP (1) JP3863454B2 (de)
DE (1) DE60306579T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7801194B2 (en) * 2002-07-01 2010-09-21 Sharp Kabushiki Kaisha Semiconductor laser device and optical disk unit using the same
EP1678795A1 (de) * 2003-10-31 2006-07-12 Bookham Technology PLC Verfahren zur herstellung von gittern in halbleitermaterialien, die leicht oxidierbar sind
ITVA20050018A1 (it) * 2005-03-15 2006-09-16 St Microelectronics Srl Commutatore controllato
JP2007035784A (ja) * 2005-07-25 2007-02-08 Sumitomo Electric Ind Ltd 分布帰還型半導体レーザ
WO2007096939A1 (ja) * 2006-02-20 2007-08-30 Fujitsu Limited 光半導体装置とその製造方法
JP4816260B2 (ja) * 2006-06-02 2011-11-16 住友電気工業株式会社 半導体発光素子の製造方法
JP5284036B2 (ja) * 2007-11-14 2013-09-11 キヤノン株式会社 発光装置
JP5217598B2 (ja) * 2008-04-21 2013-06-19 住友電気工業株式会社 半導体発光素子の製造方法
JP5098878B2 (ja) * 2008-08-01 2012-12-12 住友電気工業株式会社 半導体発光素子の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0562518B1 (de) * 1992-03-23 1997-12-29 Canon Kabushiki Kaisha Optische Vorrichtung und Methode unter Benutzung dieser Vorrichtung, welche die Änderung einer über die beiden Anschlussenden eines verstärkenden Bereichs abfallenden Spannung ausnutzt
US6026110A (en) * 1997-10-16 2000-02-15 Nortel Networks Corporation Distributed feedback semiconductor laser with gain modulation
US6614059B1 (en) * 1999-01-07 2003-09-02 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device with quantum well
JP3842976B2 (ja) * 2000-03-17 2006-11-08 富士通株式会社 分布帰還型半導体レーザとその製造方法

Also Published As

Publication number Publication date
DE60306579T2 (de) 2006-11-09
US20030198266A1 (en) 2003-10-23
JP3863454B2 (ja) 2006-12-27
EP1363368B1 (de) 2006-07-05
EP1363368A3 (de) 2005-07-06
US6853661B2 (en) 2005-02-08
EP1363368A2 (de) 2003-11-19
JP2003318482A (ja) 2003-11-07

Similar Documents

Publication Publication Date Title
ITMI20022341A1 (it) Circuito idraulico.
DE60311095D1 (de) Mehrstrahliger halbleiterlaser
BR0312249B1 (pt) substrato transparente.
DE60239445D1 (de) Halbleiterlaserstruktur
DE60335848D1 (de) LED mit Wellenlängen-Konverter
DE60224273D1 (de) Mehrstrahl-halbleiterlaserelement
DE60222138D1 (de) Abstimmbarer laser
DE60324962D1 (de) Halbleiterlaseranordnung
DE60233377D1 (de) Pegelschieber
DE60205829T2 (de) Kette
DE60134911D1 (de) Halbleiterlaser mit verteilter Rückkopplung
DE10302134B8 (de) Halbleiterlaser mit Modulationsdotierung
DE60222724D1 (de) Halbleiterlaserelement
DE60306579D1 (de) Verstärkungsgekoppelter Halbleiterlaser mit verminderter Blauverschiebung
DE60202683D1 (de) Abstimmbarer laser
NO20020533L (no) Lysbane
DE60211166D1 (de) Abstimmbarer laser
DE50210286D1 (de) Schaltarm
DE60201464D1 (de) Halbleiterlaser
DK1574493T3 (da) Fremgangsmåde til fremstilling af anthracendiether
DE60232822D1 (de) Kompensationsschaltung mit trimmeffekt
DE60225774D1 (de) Halbleiterlaser mit verteilter Rückkopplung
ES1050641Y (es) Sandalias con cordones
DE50208439D1 (de) Schaltarretierung
DE50300647D1 (de) Schaltarretierung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE