DE60302427D1 - Träger für eine Halbleiterlaserdiode, Verfahren um den Subträger herzustellen, und Halbleiterlaserdiode mit dem Träger - Google Patents

Träger für eine Halbleiterlaserdiode, Verfahren um den Subträger herzustellen, und Halbleiterlaserdiode mit dem Träger

Info

Publication number
DE60302427D1
DE60302427D1 DE60302427T DE60302427T DE60302427D1 DE 60302427 D1 DE60302427 D1 DE 60302427D1 DE 60302427 T DE60302427 T DE 60302427T DE 60302427 T DE60302427 T DE 60302427T DE 60302427 D1 DE60302427 D1 DE 60302427D1
Authority
DE
Germany
Prior art keywords
support
semiconductor laser
laser diode
subcarrier
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60302427T
Other languages
English (en)
Other versions
DE60302427T2 (de
Inventor
Joon-Seop Kwak
Youn-Joon Sung
Su-Hee Chae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of DE60302427D1 publication Critical patent/DE60302427D1/de
Publication of DE60302427T2 publication Critical patent/DE60302427T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE60302427T 2003-03-08 2003-12-15 Träger für eine Halbleiterlaserdiode, Verfahren um den Subträger herzustellen, und Halbleiterlaserdiode mit dem Träger Expired - Lifetime DE60302427T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020030014613A KR100958054B1 (ko) 2003-03-08 2003-03-08 반도체 레이저 다이오드의 서브 마운트, 그 제조방법 및이를 채용한 반도체 레이저 다이오드 조립체
KR2003014613 2003-03-08

Publications (2)

Publication Number Publication Date
DE60302427D1 true DE60302427D1 (de) 2005-12-29
DE60302427T2 DE60302427T2 (de) 2006-08-24

Family

ID=36776511

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60302427T Expired - Lifetime DE60302427T2 (de) 2003-03-08 2003-12-15 Träger für eine Halbleiterlaserdiode, Verfahren um den Subträger herzustellen, und Halbleiterlaserdiode mit dem Träger

Country Status (6)

Country Link
US (2) US7092420B2 (de)
EP (1) EP1458036B1 (de)
JP (1) JP2004274057A (de)
KR (1) KR100958054B1 (de)
CN (1) CN100468893C (de)
DE (1) DE60302427T2 (de)

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KR100598357B1 (ko) * 2005-05-24 2006-07-06 엘지전자 주식회사 발광소자용 서브마운트 기판
JP5113478B2 (ja) * 2006-10-13 2013-01-09 三洋電機株式会社 半導体発光素子、照明装置および半導体発光素子の製造方法
US7816155B2 (en) * 2007-07-06 2010-10-19 Jds Uniphase Corporation Mounted semiconductor device and a method for making the same
KR101475093B1 (ko) * 2007-12-28 2014-12-22 에이저 시스템즈 엘엘시 델타 도핑된 활성 영역을 갖는 도파로 디바이스
CN102202484B (zh) * 2010-03-23 2014-04-16 施耐德东芝换流器欧洲公司 散热系统诊断方法
US8456961B1 (en) 2011-03-22 2013-06-04 Western Digital (Fremont), Llc Systems and methods for mounting and aligning a laser in an electrically assisted magnetic recording assembly
US8518748B1 (en) 2011-06-29 2013-08-27 Western Digital (Fremont), Llc Method and system for providing a laser submount for an energy assisted magnetic recording head
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US8665677B1 (en) 2011-12-19 2014-03-04 Western Digital (Fremont), Llc Disk drive magnetic read head with affixed and recessed laser device
US9475151B1 (en) 2012-10-30 2016-10-25 Western Digital (Fremont), Llc Method and apparatus for attaching a laser diode and a slider in an energy assisted magnetic recording head
US9431037B2 (en) 2013-03-12 2016-08-30 Western Digitatl (Fremont), LLC Systems and methods for monitoring the power of a light source utilized in energy-assisted magnetic recording
US8897102B1 (en) 2013-04-02 2014-11-25 Western Digital (Fremont), Llc Method and system for measuring light delivery offsets in a heat assisted magnetic recording head
US9001628B1 (en) 2013-12-16 2015-04-07 Western Digital (Fremont), Llc Assistant waveguides for evaluating main waveguide coupling efficiency and diode laser alignment tolerances for hard disk
CN104979224B (zh) * 2014-04-04 2017-10-20 中国科学院苏州纳米技术与纳米仿生研究所 一种器件封装互联方法
US9042048B1 (en) 2014-09-30 2015-05-26 Western Digital (Fremont), Llc Laser-ignited reactive HAMR bonding
US9902023B1 (en) 2014-10-28 2018-02-27 Western Digital (Fremont), Llc Systems and devices for achieving high throughput attachment and sub-micron alignment of components
US10622785B2 (en) 2015-01-30 2020-04-14 University Of Southern California Micro-VCSELs in thermally engineered flexible composite assemblies
KR102373677B1 (ko) * 2015-08-24 2022-03-14 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자
US20170105287A1 (en) * 2015-10-12 2017-04-13 Tyco Electronics Corporation Process of Producing Electronic Component and an Electronic Component
TWI620352B (zh) * 2017-01-20 2018-04-01 大光能源科技有限公司 覆晶發光二極體及其製造方法
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Also Published As

Publication number Publication date
KR100958054B1 (ko) 2010-05-13
CN1527448A (zh) 2004-09-08
EP1458036A1 (de) 2004-09-15
KR20040079635A (ko) 2004-09-16
US7092420B2 (en) 2006-08-15
JP2004274057A (ja) 2004-09-30
CN100468893C (zh) 2009-03-11
DE60302427T2 (de) 2006-08-24
US20070015313A1 (en) 2007-01-18
US20050002428A1 (en) 2005-01-06
EP1458036B1 (de) 2005-11-23

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