DE60239766D1 - Wärmebehandlungssystem - Google Patents

Wärmebehandlungssystem

Info

Publication number
DE60239766D1
DE60239766D1 DE60239766T DE60239766T DE60239766D1 DE 60239766 D1 DE60239766 D1 DE 60239766D1 DE 60239766 T DE60239766 T DE 60239766T DE 60239766 T DE60239766 T DE 60239766T DE 60239766 D1 DE60239766 D1 DE 60239766D1
Authority
DE
Germany
Prior art keywords
heat treatment
treatment system
heat
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60239766T
Other languages
English (en)
Inventor
Takanori Saito
Kenichi Yamaga
Ken Nakao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE60239766D1 publication Critical patent/DE60239766D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
DE60239766T 2002-02-28 2002-11-25 Wärmebehandlungssystem Expired - Lifetime DE60239766D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002054542 2002-02-28
JP2002200572A JP3912208B2 (ja) 2002-02-28 2002-07-09 熱処理装置
PCT/JP2002/012280 WO2003073487A1 (fr) 2002-02-28 2002-11-25 Systeme de traitement thermique

Publications (1)

Publication Number Publication Date
DE60239766D1 true DE60239766D1 (de) 2011-05-26

Family

ID=27767205

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60239766T Expired - Lifetime DE60239766D1 (de) 2002-02-28 2002-11-25 Wärmebehandlungssystem

Country Status (8)

Country Link
US (1) US7102104B2 (de)
EP (1) EP1480262B1 (de)
JP (1) JP3912208B2 (de)
KR (1) KR100910292B1 (de)
CN (2) CN1309022C (de)
DE (1) DE60239766D1 (de)
TW (1) TWI244140B (de)
WO (1) WO2003073487A1 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3910151B2 (ja) * 2003-04-01 2007-04-25 東京エレクトロン株式会社 熱処理方法及び熱処理装置
JP4404620B2 (ja) * 2003-12-22 2010-01-27 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
JP4475136B2 (ja) 2005-02-18 2010-06-09 東京エレクトロン株式会社 処理システム、前処理装置及び記憶媒体
US8039049B2 (en) * 2005-09-30 2011-10-18 Tokyo Electron Limited Treatment of low dielectric constant films using a batch processing system
US8375891B2 (en) * 2006-09-11 2013-02-19 Ulvac, Inc. Vacuum vapor processing apparatus
JP4842227B2 (ja) * 2006-09-13 2011-12-21 東京エレクトロン株式会社 半導体製造装置における地震被害拡散低減システム
JP4495717B2 (ja) * 2006-12-08 2010-07-07 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP5264122B2 (ja) * 2007-08-23 2013-08-14 日本エア・リキード株式会社 熱処理装置およびこれを用いた液化ガス供給装置
WO2009049020A2 (en) * 2007-10-11 2009-04-16 Valence Process Equipment, Inc. Chemical vapor deposition reactor
JP5383332B2 (ja) 2008-08-06 2014-01-08 株式会社日立国際電気 基板処理装置、基板処理方法及び半導体装置の製造方法
JP5043776B2 (ja) * 2008-08-08 2012-10-10 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP5504793B2 (ja) * 2009-09-26 2014-05-28 東京エレクトロン株式会社 熱処理装置及び冷却方法
CN102043329A (zh) * 2009-10-16 2011-05-04 联华电子股份有限公司 整合式光刻机台及光刻工艺
KR101126098B1 (ko) * 2010-03-31 2012-03-29 주식회사 테라세미콘 배치식 기판처리 장치
US9513003B2 (en) * 2010-08-16 2016-12-06 Purpose Company Limited Combustion apparatus, method for combustion control, board, combustion control system and water heater
TWM413957U (en) * 2010-10-27 2011-10-11 Tangteck Equipment Inc Diffusion furnace apparatus
JP5982758B2 (ja) * 2011-02-23 2016-08-31 東京エレクトロン株式会社 マイクロ波照射装置
JP2012195565A (ja) * 2011-02-28 2012-10-11 Hitachi Kokusai Electric Inc 基板処理装置、基板処理方法及び半導体装置の製造方法
CN102230727A (zh) * 2011-06-01 2011-11-02 北京七星华创电子股份有限公司 立式炉冷却控制系统及方法
KR101275496B1 (ko) * 2011-09-08 2013-06-17 주식회사 테라세미콘 기판 처리 장치
KR101427726B1 (ko) * 2011-12-27 2014-08-07 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반도체 장치의 제조 방법
KR101364196B1 (ko) * 2012-02-28 2014-02-20 주식회사 테라세미콘 배치식 원자층 증착장치 및 이를 포함하는 클러스터형 원자층 증착장치
JP5966649B2 (ja) * 2012-06-18 2016-08-10 東京エレクトロン株式会社 熱処理装置
KR101396601B1 (ko) * 2013-02-26 2014-05-20 주식회사 테라세미콘 배치식 기판처리 장치
JP6630146B2 (ja) * 2015-02-25 2020-01-15 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法および加熱部
US20170207078A1 (en) * 2016-01-15 2017-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Atomic layer deposition apparatus and semiconductor process
US10867812B2 (en) * 2017-08-30 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor manufacturing system and control method
JP6952633B2 (ja) * 2018-03-23 2021-10-20 東京エレクトロン株式会社 基板加熱装置及びこれを用いた基板処理装置
JP6871959B2 (ja) * 2018-03-30 2021-05-19 芝浦メカトロニクス株式会社 有機膜形成装置、および有機膜の製造方法
JP2020065984A (ja) * 2018-10-25 2020-04-30 大陽日酸株式会社 ガス精製装置及びガス精製方法
JP7203588B2 (ja) * 2018-12-17 2023-01-13 東京エレクトロン株式会社 熱処理装置
JP7073016B2 (ja) * 2020-01-10 2022-05-23 中外炉工業株式会社 クリーン熱処理装置
WO2023105821A1 (ja) * 2021-12-06 2023-06-15 株式会社Kokusai Electric 天井ヒータ、半導体装置の製造方法、基板処理方法及び基板処理装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2662722B2 (ja) * 1990-01-12 1997-10-15 東京エレクトロン株式会社 バッチ式熱処理装置
JPH08195351A (ja) * 1995-01-17 1996-07-30 Kokusai Electric Co Ltd 半導体反応炉
US5904478A (en) * 1997-03-07 1999-05-18 Semitool, Inc. Semiconductor processing furnace heating subassembly
JP2000100812A (ja) 1998-09-17 2000-04-07 Tokyo Electron Ltd シリコンナイトライド膜の成膜方法
JP3170573B2 (ja) 1999-06-23 2001-05-28 助川電気工業株式会社 縦型加熱炉用円板状ヒータ
US6450805B1 (en) * 1999-08-11 2002-09-17 Tokyo Electron Limited Hot plate cooling method and heat processing apparatus
JP3263383B2 (ja) * 1999-09-29 2002-03-04 助川電気工業株式会社 縦型加熱装置
JP3598032B2 (ja) * 1999-11-30 2004-12-08 東京エレクトロン株式会社 縦型熱処理装置及び熱処理方法並びに保温ユニット
JP3404674B2 (ja) * 2000-01-21 2003-05-12 株式会社真空技研 超高温熱処理装置
JP3479020B2 (ja) * 2000-01-28 2003-12-15 東京エレクトロン株式会社 熱処理装置

Also Published As

Publication number Publication date
EP1480262A1 (de) 2004-11-24
KR100910292B1 (ko) 2009-08-03
US7102104B2 (en) 2006-09-05
KR20040083069A (ko) 2004-09-30
US20050121432A1 (en) 2005-06-09
EP1480262B1 (de) 2011-04-13
JP3912208B2 (ja) 2007-05-09
EP1480262A4 (de) 2006-12-06
CN1618118A (zh) 2005-05-18
JP2003324045A (ja) 2003-11-14
TWI244140B (en) 2005-11-21
CN2597491Y (zh) 2004-01-07
TW200303586A (en) 2003-09-01
CN1309022C (zh) 2007-04-04
WO2003073487A1 (fr) 2003-09-04

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