DE60218755T2 - Verfahren zur herstellung von strukturen auf nanomassstab in lichtaushärtbaren zusammensetzungen mit einem elektrischen feld - Google Patents
Verfahren zur herstellung von strukturen auf nanomassstab in lichtaushärtbaren zusammensetzungen mit einem elektrischen feld Download PDFInfo
- Publication number
- DE60218755T2 DE60218755T2 DE60218755T DE60218755T DE60218755T2 DE 60218755 T2 DE60218755 T2 DE 60218755T2 DE 60218755 T DE60218755 T DE 60218755T DE 60218755 T DE60218755 T DE 60218755T DE 60218755 T2 DE60218755 T2 DE 60218755T2
- Authority
- DE
- Germany
- Prior art keywords
- polymerizable composition
- substrate
- template
- electric field
- templet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 67
- 230000005684 electric field Effects 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims abstract description 77
- 238000000034 method Methods 0.000 claims abstract description 55
- 230000008569 process Effects 0.000 claims abstract description 25
- 239000007788 liquid Substances 0.000 claims abstract description 18
- 230000003213 activating effect Effects 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910003811 SiGeC Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 230000000379 polymerizing effect Effects 0.000 claims 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 229920001187 thermosetting polymer Polymers 0.000 claims 1
- 238000001459 lithography Methods 0.000 abstract description 10
- 239000010410 layer Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 13
- 238000012876 topography Methods 0.000 description 9
- 230000008859 change Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000002086 nanomaterial Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 238000001723 curing Methods 0.000 description 4
- 238000000609 electron-beam lithography Methods 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000001494 step-and-flash imprint lithography Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000003848 UV Light-Curing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000012811 non-conductive material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 238000001699 lithographically induced self-assembly Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000001127 nanoimprint lithography Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
Landscapes
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Polymerisation Methods In General (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Casting Or Compression Moulding Of Plastics Or The Like (AREA)
- Moulding By Coating Moulds (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US29166401P | 2001-05-16 | 2001-05-16 | |
| US291664P | 2001-05-16 | ||
| PCT/US2002/015551 WO2004063815A2 (en) | 2001-05-16 | 2002-05-16 | Method and system for fabricating nanoscale patterns in light curable compositions using an electric field |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60218755D1 DE60218755D1 (de) | 2007-04-19 |
| DE60218755T2 true DE60218755T2 (de) | 2007-11-15 |
Family
ID=32710708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60218755T Expired - Fee Related DE60218755T2 (de) | 2001-05-16 | 2002-05-16 | Verfahren zur herstellung von strukturen auf nanomassstab in lichtaushärtbaren zusammensetzungen mit einem elektrischen feld |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP1512048B1 (enExample) |
| JP (1) | JP2005520220A (enExample) |
| CN (1) | CN1729428A (enExample) |
| AT (1) | ATE356374T1 (enExample) |
| AU (1) | AU2002368430A1 (enExample) |
| DE (1) | DE60218755T2 (enExample) |
| WO (1) | WO2004063815A2 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7077992B2 (en) | 2002-07-11 | 2006-07-18 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
| MY144124A (en) * | 2002-07-11 | 2011-08-15 | Molecular Imprints Inc | Step and repeat imprint lithography systems |
| US6871558B2 (en) | 2002-12-12 | 2005-03-29 | Molecular Imprints, Inc. | Method for determining characteristics of substrate employing fluid geometries |
| US7122079B2 (en) | 2004-02-27 | 2006-10-17 | Molecular Imprints, Inc. | Composition for an etching mask comprising a silicon-containing material |
| US7654816B2 (en) * | 2004-10-07 | 2010-02-02 | Hewlett-Packard Development Company, L.P. | Lithographic mask alignment |
| CN100395121C (zh) * | 2004-11-19 | 2008-06-18 | 鸿富锦精密工业（深圳）有限公司 | 热压印方法 |
| JP4742665B2 (ja) * | 2005-04-28 | 2011-08-10 | 旭硝子株式会社 | エッチング処理された処理基板の製造方法 |
| JP4736522B2 (ja) * | 2005-04-28 | 2011-07-27 | 旭硝子株式会社 | エッチング処理された処理基板の製造方法 |
| JP5002211B2 (ja) * | 2005-08-12 | 2012-08-15 | キヤノン株式会社 | インプリント装置およびインプリント方法 |
| JP5268239B2 (ja) * | 2005-10-18 | 2013-08-21 | キヤノン株式会社 | パターン形成装置、パターン形成方法 |
| DE102006007800B3 (de) | 2006-02-20 | 2007-10-04 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Strukturierungsverfahren und Bauteil mit einer strukturierten Oberfläche |
| CN101496106A (zh) * | 2006-07-28 | 2009-07-29 | 国际商业机器公司 | 用于使聚合物层的表面图案化的器件和方法 |
| KR101322133B1 (ko) * | 2006-11-24 | 2013-10-25 | 엘지디스플레이 주식회사 | 임프린트 리소그래피용 스탬프 및 이를 이용한 임프린트리소그래피 방법 |
| CN101446762B (zh) * | 2008-12-31 | 2011-07-27 | 西安交通大学 | 非接触式模板约束下的电场诱导微复型方法 |
| CN102253435A (zh) * | 2011-07-11 | 2011-11-23 | 西安交通大学 | 一种利用电场诱导制造聚合物柱面微透镜的微加工方法 |
| JP5328869B2 (ja) * | 2011-10-21 | 2013-10-30 | 東芝機械株式会社 | 転写用の型の製造方法 |
| JP6273860B2 (ja) * | 2014-01-27 | 2018-02-07 | 大日本印刷株式会社 | インプリントモールド及び半導体デバイスの製造方法 |
| JP6980478B2 (ja) * | 2017-09-29 | 2021-12-15 | キヤノン株式会社 | インプリント装置、インプリント方法および物品の製造方法 |
| NL2021092B1 (en) * | 2018-06-08 | 2019-12-13 | Qlayers Holding B V | Application of a coating on a base structure |
| CN109188862A (zh) * | 2018-10-11 | 2019-01-11 | 京东方科技集团股份有限公司 | 压印结构及其制造方法、压印模板 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1068535B (it) * | 1975-11-03 | 1985-03-21 | Ibm | Apparecchio e processo elettrolito grafico |
| WO2000021689A1 (en) * | 1998-10-09 | 2000-04-20 | The Trustees Of Princeton University | Microscale patterning and articles formed thereby |
| DE60019974T2 (de) * | 1999-12-23 | 2005-11-10 | The University Of Massachusetts, Boston | Verfahren zur herstellung von submikron mustern auf filmen |
-
2002
- 2002-05-16 CN CN02810019.0A patent/CN1729428A/zh active Pending
- 2002-05-16 EP EP02808354A patent/EP1512048B1/en not_active Expired - Lifetime
- 2002-05-16 AU AU2002368430A patent/AU2002368430A1/en not_active Abandoned
- 2002-05-16 AT AT02808354T patent/ATE356374T1/de not_active IP Right Cessation
- 2002-05-16 WO PCT/US2002/015551 patent/WO2004063815A2/en not_active Ceased
- 2002-05-16 DE DE60218755T patent/DE60218755T2/de not_active Expired - Fee Related
- 2002-05-16 JP JP2004566379A patent/JP2005520220A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2004063815A2 (en) | 2004-07-29 |
| AU2002368430A1 (en) | 2004-08-10 |
| JP2005520220A (ja) | 2005-07-07 |
| ATE356374T1 (de) | 2007-03-15 |
| EP1512048A2 (en) | 2005-03-09 |
| WO2004063815A3 (en) | 2004-12-29 |
| CN1729428A (zh) | 2006-02-01 |
| EP1512048B1 (en) | 2007-03-07 |
| DE60218755D1 (de) | 2007-04-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE60218755T2 (de) | Verfahren zur herstellung von strukturen auf nanomassstab in lichtaushärtbaren zusammensetzungen mit einem elektrischen feld | |
| US6964793B2 (en) | Method for fabricating nanoscale patterns in light curable compositions using an electric field | |
| Bender et al. | Fabrication of nanostructures using a UV-based imprint technique | |
| DE69524247T2 (de) | Stempel für lithographie-verfahren | |
| TWI295227B (en) | Step and repeat imprint lithography process | |
| DE60310460T2 (de) | Verfahren und deren Maske zur Musterherstellung in einer Polymerschicht | |
| JP2003518441A5 (enExample) | ||
| JP2003518441A (ja) | フィルム上にサブミクロンパターンを形成するための方法及び装置 | |
| DE112009001633T5 (de) | Feinstruktur und Prägestempel | |
| US8287792B2 (en) | Methods of forming fine patterns using a nanoimprint lithography | |
| KR20050019557A (ko) | 나노 임프린트 방법 및 이에 이용되는 고분자 조성물 | |
| DE60315569T2 (de) | Verfahren zur Herstellung von dreidimensionalen Nanostrukturen und Mikrostrukturen | |
| DE20122196U1 (de) | Schablone für Niederdruck-Mikro- und -Nanoprägelithographie bei Raumtemperatur | |
| US20030228418A1 (en) | Replication of nanoperiodic surface structures | |
| DE102006019962A1 (de) | Imprint-Maske und Verfahren zum Ausrichten der Imprint-Maske | |
| KR101049218B1 (ko) | 적용 가압력 제거를 이용한 미세 패턴 형성 방법 | |
| US7261830B2 (en) | Applying imprinting material to substrates employing electromagnetic fields | |
| DE102012018635A1 (de) | Verfahren zum Herstellen einer 3D-Struktur | |
| EP3552058A1 (de) | Verfahren zum prägen von mikro- und/oder nanostrukturen | |
| DE112011104571T5 (de) | Verfahren zum Ausbilden eines feinen Musters in einem großen Bereich unter Verwendung von Laser-Interferenz-Lithographie, Verfahren zum nicht-planaren Transfer des feinen Musters, ausgebildet durch das Verfahren und Artikel, an welchen das feine Muster durch das Transferverfahren transferiert ist | |
| KR100927481B1 (ko) | 마이크로-나노 금속 구조물의 제조 방법 | |
| Kettle et al. | Overcoming material challenges for replication of “motheye lenses” using step and flash imprint lithography for optoelectronic applications | |
| DE102019101346A1 (de) | Nanostempelverfahren und nanooptisches bauteil | |
| DE20122179U1 (de) | Vorrichtung zum automatischen Abgeben von Flüssigkeit für Prägelithographieprozesse | |
| EP4176311B1 (de) | Verfahren zum erzeugen von mikro- und/oder nanostrukturen |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8328 | Change in the person/name/address of the agent |
Representative=s name: PUSCHMANN & BORCHERT, 82041 OBERHACHING |
|
| 8339 | Ceased/non-payment of the annual fee |