DE60218218D1 - Verfahren zur planarisierung von oberflächen, die metalle der gruppe viii enthalten, unter verwendung eines fixierten schleifgegenstands - Google Patents

Verfahren zur planarisierung von oberflächen, die metalle der gruppe viii enthalten, unter verwendung eines fixierten schleifgegenstands

Info

Publication number
DE60218218D1
DE60218218D1 DE60218218T DE60218218T DE60218218D1 DE 60218218 D1 DE60218218 D1 DE 60218218D1 DE 60218218 T DE60218218 T DE 60218218T DE 60218218 T DE60218218 T DE 60218218T DE 60218218 D1 DE60218218 D1 DE 60218218D1
Authority
DE
Germany
Prior art keywords
planarization
group viii
containing metals
fixed grinding
grinding object
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60218218T
Other languages
English (en)
Other versions
DE60218218T2 (de
Inventor
M Sabde
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of DE60218218D1 publication Critical patent/DE60218218D1/de
Application granted granted Critical
Publication of DE60218218T2 publication Critical patent/DE60218218T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
    • B24B21/04—Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12944—Ni-base component

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
DE60218218T 2001-12-21 2002-12-17 Verfahren zur planarisierung von oberflächen, die metalle der gruppe viii enthalten, unter verwendung eines fixierten schleifgegenstands Expired - Lifetime DE60218218T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US28616 1979-04-09
US10/028,616 US7121926B2 (en) 2001-12-21 2001-12-21 Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article
PCT/US2002/040406 WO2003059571A1 (en) 2001-12-21 2002-12-17 Methods for planarization of group viii metal-containing surfaces using a fixed abrasive article

Publications (2)

Publication Number Publication Date
DE60218218D1 true DE60218218D1 (de) 2007-03-29
DE60218218T2 DE60218218T2 (de) 2007-10-25

Family

ID=21844443

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60218218T Expired - Lifetime DE60218218T2 (de) 2001-12-21 2002-12-17 Verfahren zur planarisierung von oberflächen, die metalle der gruppe viii enthalten, unter verwendung eines fixierten schleifgegenstands

Country Status (10)

Country Link
US (2) US7121926B2 (de)
EP (1) EP1458520B1 (de)
JP (1) JP2005514798A (de)
KR (1) KR100667391B1 (de)
CN (1) CN100408267C (de)
AT (1) ATE353735T1 (de)
AU (1) AU2002351393A1 (de)
DE (1) DE60218218T2 (de)
TW (1) TWI237853B (de)
WO (1) WO2003059571A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7067111B1 (en) 1999-10-25 2006-06-27 Board Of Regents, University Of Texas System Ethylenedicysteine (EC)-drug conjugates, compositions and methods for tissue specific disease imaging
DK1286704T3 (da) * 2000-06-02 2014-09-22 Univ Texas Ethylendicystein (EC)-glucose analoge konjugater
US7049237B2 (en) * 2001-12-21 2006-05-23 Micron Technology, Inc. Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases
US7121926B2 (en) * 2001-12-21 2006-10-17 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article
US20030119316A1 (en) * 2001-12-21 2003-06-26 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using oxidizing agents
US6730592B2 (en) * 2001-12-21 2004-05-04 Micron Technology, Inc. Methods for planarization of metal-containing surfaces using halogens and halide salts
US6884723B2 (en) * 2001-12-21 2005-04-26 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using complexing agents
US6967166B2 (en) * 2002-04-12 2005-11-22 Asm Nutool, Inc. Method for monitoring and controlling force applied on workpiece surface during electrochemical mechanical processing
JP4238097B2 (ja) * 2003-09-04 2009-03-11 Ｔｄｋ株式会社 コイル部品の製造方法
US9050378B2 (en) * 2003-12-10 2015-06-09 Board Of Regents, The University Of Texas System N2S2 chelate-targeting ligand conjugates
US7161247B2 (en) 2004-07-28 2007-01-09 Cabot Microelectronics Corporation Polishing composition for noble metals
US8758723B2 (en) * 2006-04-19 2014-06-24 The Board Of Regents Of The University Of Texas System Compositions and methods for cellular imaging and therapy
US10925977B2 (en) * 2006-10-05 2021-02-23 Ceil>Point, LLC Efficient synthesis of chelators for nuclear imaging and radiotherapy: compositions and applications
US20120255635A1 (en) * 2011-04-11 2012-10-11 Applied Materials, Inc. Method and apparatus for refurbishing gas distribution plate surfaces

Family Cites Families (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5177404A (de) 1974-12-26 1976-07-05 Fuji Photo Film Co Ltd
US4035500A (en) 1976-06-04 1977-07-12 Western Electric Company, Inc. Method of depositing a metal on a surface of a substrate
US4670306A (en) 1983-09-15 1987-06-02 Seleco, Inc. Method for treatment of surfaces for electroless plating
US4747907A (en) 1986-10-29 1988-05-31 International Business Machines Corporation Metal etching process with etch rate enhancement
US4992137A (en) 1990-07-18 1991-02-12 Micron Technology, Inc. Dry etching method and method for prevention of low temperature post etch deposit
US5981454A (en) 1993-06-21 1999-11-09 Ekc Technology, Inc. Post clean treatment composition comprising an organic acid and hydroxylamine
US5254217A (en) 1992-07-27 1993-10-19 Motorola, Inc. Method for fabricating a semiconductor device having a conductive metal oxide
US6069080A (en) * 1992-08-19 2000-05-30 Rodel Holdings, Inc. Fixed abrasive polishing system for the manufacture of semiconductor devices, memory disks and the like
JP3143812B2 (ja) 1992-10-12 2001-03-07 賢藏 益子 潜在指紋検出方法
GB9226434D0 (en) 1992-12-18 1993-02-10 Johnson Matthey Plc Catalyst
US5380401A (en) 1993-01-14 1995-01-10 Micron Technology, Inc. Method to remove fluorine residues from bond pads
US5392189A (en) 1993-04-02 1995-02-21 Micron Semiconductor, Inc. Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same
US5318927A (en) 1993-04-29 1994-06-07 Micron Semiconductor, Inc. Methods of chemical-mechanical polishing insulating inorganic metal oxide materials
US5575885A (en) 1993-12-14 1996-11-19 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing semiconductor device
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5695384A (en) 1994-12-07 1997-12-09 Texas Instruments Incorporated Chemical-mechanical polishing salt slurry
US5958794A (en) 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
US5700383A (en) 1995-12-21 1997-12-23 Intel Corporation Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
US5711851A (en) 1996-07-12 1998-01-27 Micron Technology, Inc. Process for improving the performance of a temperature-sensitive etch process
US5692950A (en) 1996-08-08 1997-12-02 Minnesota Mining And Manufacturing Company Abrasive construction for semiconductor wafer modification
US5888906A (en) 1996-09-16 1999-03-30 Micron Technology, Inc. Plasmaless dry contact cleaning method using interhalogen compounds
US5958288A (en) 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US5954997A (en) 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
US6045716A (en) 1997-03-12 2000-04-04 Strasbaugh Chemical mechanical polishing apparatus and method
US5916855A (en) 1997-03-26 1999-06-29 Advanced Micro Devices, Inc. Chemical-mechanical polishing slurry formulation and method for tungsten and titanium thin films
US6211034B1 (en) 1997-04-14 2001-04-03 Texas Instruments Incorporated Metal patterning with adhesive hardmask layer
KR100230422B1 (ko) 1997-04-25 1999-11-15 윤종용 반도체장치의 커패시터 제조방법
US6149828A (en) 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
US5935871A (en) 1997-08-22 1999-08-10 Motorola, Inc. Process for forming a semiconductor device
US6071816A (en) 1997-08-29 2000-06-06 Motorola, Inc. Method of chemical mechanical planarization using a water rinse to prevent particle contamination
US6143191A (en) 1997-11-10 2000-11-07 Advanced Technology Materials, Inc. Method for etch fabrication of iridium-based electrode structures
JPH11204791A (ja) 1997-11-17 1999-07-30 Toshiba Corp 半導体装置及びその製造方法
US6346741B1 (en) 1997-11-20 2002-02-12 Advanced Technology Materials, Inc. Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same
US5976928A (en) 1997-11-20 1999-11-02 Advanced Technology Materials, Inc. Chemical mechanical polishing of FeRAM capacitors
WO1999053532A1 (en) 1998-04-10 1999-10-21 Ferro Corporation Slurry for chemical-mechanical polishing metal surfaces
US6110830A (en) 1998-04-24 2000-08-29 Micron Technology, Inc. Methods of reducing corrosion of materials, methods of protecting aluminum within aluminum-comprising layers from electrochemical degradation during semiconductor processing methods of forming aluminum-comprising lines
US6177026B1 (en) * 1998-05-26 2001-01-23 Cabot Microelectronics Corporation CMP slurry containing a solid catalyst
US6143192A (en) 1998-09-03 2000-11-07 Micron Technology, Inc. Ruthenium and ruthenium dioxide removal method and material
US6039633A (en) 1998-10-01 2000-03-21 Micron Technology, Inc. Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies
US6436723B1 (en) 1998-10-16 2002-08-20 Kabushiki Kaisha Toshiba Etching method and etching apparatus method for manufacturing semiconductor device and semiconductor device
US6278153B1 (en) 1998-10-19 2001-08-21 Nec Corporation Thin film capacitor formed in via
JP3494933B2 (ja) 1998-10-26 2004-02-09 株式会社ルネサステクノロジ 半導体製造装置のクリ−ニング方法
US6395194B1 (en) * 1998-12-18 2002-05-28 Intersurface Dynamics Inc. Chemical mechanical polishing compositions, and process for the CMP removal of iridium thin using same
US6290736B1 (en) 1999-02-09 2001-09-18 Sharp Laboratories Of America, Inc. Chemically active slurry for the polishing of noble metals and method for same
JP2000315666A (ja) * 1999-04-28 2000-11-14 Hitachi Ltd 半導体集積回路装置の製造方法
US6261157B1 (en) * 1999-05-25 2001-07-17 Applied Materials, Inc. Selective damascene chemical mechanical polishing
DE19927286B4 (de) 1999-06-15 2011-07-28 Qimonda AG, 81739 Verwendung einer Schleiflösung zum chemisch-mechanischen Polieren einer Edelmetall-Oberfläche
US6306012B1 (en) 1999-07-20 2001-10-23 Micron Technology, Inc. Methods and apparatuses for planarizing microelectronic substrate assemblies
AU6379500A (en) 1999-08-13 2001-03-13 Cabot Microelectronics Corporation Chemical mechanical polishing systems and methods for their use
US6368518B1 (en) 1999-08-25 2002-04-09 Micron Technology, Inc. Methods for removing rhodium- and iridium-containing films
DE19959711A1 (de) 1999-12-10 2001-06-21 Infineon Technologies Ag Verfahren zur Herstellung einer strukturierten Metallschicht
KR100844032B1 (ko) 1999-12-14 2008-07-04 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 귀금속 연마용 조성물
US20020039839A1 (en) 1999-12-14 2002-04-04 Thomas Terence M. Polishing compositions for noble metals
JP2003517194A (ja) 1999-12-14 2003-05-20 ロデール ホールディングス インコーポレイテッド 半導体基盤用研磨組成物
JP2001187877A (ja) 1999-12-28 2001-07-10 Nec Corp 化学的機械的研磨用スラリー
JP2001196413A (ja) 2000-01-12 2001-07-19 Mitsubishi Electric Corp 半導体装置、該半導体装置の製造方法、ｃｍｐ装置、及びｃｍｐ方法
TWI296006B (de) 2000-02-09 2008-04-21 Jsr Corp
JP4510979B2 (ja) 2000-02-23 2010-07-28 ルネサスエレクトロニクス株式会社 ルテニウム又は酸化ルテニウム除去液の使用方法、及びルテニウム又は酸化ルテニウムの除去方法
DE10022649B4 (de) 2000-04-28 2008-06-19 Qimonda Ag Polierflüssigkeit und Verfahren zur Strukturierung von Metalloxiden
DE10024874A1 (de) 2000-05-16 2001-11-29 Siemens Ag Polierflüssigkeit und Verfahren zur Strukturierung von Metallen und Metalloxiden
JP3945964B2 (ja) * 2000-06-01 2007-07-18 株式会社ルネサステクノロジ 研磨剤、研磨方法及び半導体装置の製造方法
US6482736B1 (en) 2000-06-08 2002-11-19 Micron Technology, Inc. Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layers
JP4108941B2 (ja) 2000-10-31 2008-06-25 株式会社荏原製作所 基板の把持装置、処理装置、及び把持方法
US6756308B2 (en) 2001-02-13 2004-06-29 Ekc Technology, Inc. Chemical-mechanical planarization using ozone
TW543093B (en) 2001-04-12 2003-07-21 Cabot Microelectronics Corp Method of reducing in-trench smearing during polishing
US6589100B2 (en) 2001-09-24 2003-07-08 Cabot Microelectronics Corporation Rare earth salt/oxidizer-based CMP method
US6884723B2 (en) 2001-12-21 2005-04-26 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using complexing agents
US7121926B2 (en) 2001-12-21 2006-10-17 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article
US20030119316A1 (en) * 2001-12-21 2003-06-26 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using oxidizing agents
US7049237B2 (en) 2001-12-21 2006-05-23 Micron Technology, Inc. Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases
US6730592B2 (en) 2001-12-21 2004-05-04 Micron Technology, Inc. Methods for planarization of metal-containing surfaces using halogens and halide salts
US6527622B1 (en) 2002-01-22 2003-03-04 Cabot Microelectronics Corporation CMP method for noble metals

Also Published As

Publication number Publication date
JP2005514798A (ja) 2005-05-19
KR20040065296A (ko) 2004-07-21
DE60218218T2 (de) 2007-10-25
CN100408267C (zh) 2008-08-06
TW200301518A (en) 2003-07-01
AU2002351393A1 (en) 2003-07-30
CN1606486A (zh) 2005-04-13
TWI237853B (en) 2005-08-11
KR100667391B1 (ko) 2007-01-10
US7121926B2 (en) 2006-10-17
EP1458520A1 (de) 2004-09-22
US20030119426A1 (en) 2003-06-26
US20060194518A1 (en) 2006-08-31
WO2003059571A1 (en) 2003-07-24
EP1458520B1 (de) 2007-02-14
ATE353735T1 (de) 2007-03-15

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