DE60216838D1 - Magnetoresistives Element,Speicherelement mit dieses magnetoresistiven Element,und Aufnahme/Wiedergabe-Verfahren für das Speicherelement - Google Patents

Magnetoresistives Element,Speicherelement mit dieses magnetoresistiven Element,und Aufnahme/Wiedergabe-Verfahren für das Speicherelement

Info

Publication number
DE60216838D1
DE60216838D1 DE60216838T DE60216838T DE60216838D1 DE 60216838 D1 DE60216838 D1 DE 60216838D1 DE 60216838 T DE60216838 T DE 60216838T DE 60216838 T DE60216838 T DE 60216838T DE 60216838 D1 DE60216838 D1 DE 60216838D1
Authority
DE
Germany
Prior art keywords
magnetoresistive
memory element
memory
recording
reproducing method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60216838T
Other languages
English (en)
Other versions
DE60216838T2 (de
Inventor
Naoki Nishimura
Takashi Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2001078470A external-priority patent/JP3658331B2/ja
Priority claimed from JP2001078472A external-priority patent/JP3634761B2/ja
Priority claimed from JP2001369769A external-priority patent/JP4065486B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE60216838D1 publication Critical patent/DE60216838D1/de
Application granted granted Critical
Publication of DE60216838T2 publication Critical patent/DE60216838T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
DE60216838T 2001-03-19 2002-03-18 Magnetoresistives Element,Speicherelement mit dieses magnetoresistiven Element,und Aufnahme/Wiedergabe-Verfahren für das Speicherelement Expired - Lifetime DE60216838T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2001078470A JP3658331B2 (ja) 2001-03-19 2001-03-19 メモリ素子の記録再生方法、磁気抵抗素子及び磁気ランダムアクセスメモリ
JP2001078472 2001-03-19
JP2001078472A JP3634761B2 (ja) 2001-03-19 2001-03-19 磁気抵抗素子、該磁気抵抗素子を用いたメモリ素子及び磁気ランダムアクセスメモリ、並びに記録再生方法
JP2001078470 2001-03-19
JP2001369769A JP4065486B2 (ja) 2001-12-04 2001-12-04 磁気抵抗効果膜の製造方法
JP2001369769 2001-12-04

Publications (2)

Publication Number Publication Date
DE60216838D1 true DE60216838D1 (de) 2007-02-01
DE60216838T2 DE60216838T2 (de) 2007-09-06

Family

ID=27346283

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60216838T Expired - Lifetime DE60216838T2 (de) 2001-03-19 2002-03-18 Magnetoresistives Element,Speicherelement mit dieses magnetoresistiven Element,und Aufnahme/Wiedergabe-Verfahren für das Speicherelement

Country Status (6)

Country Link
US (1) US6713830B2 (de)
EP (1) EP1244117B1 (de)
KR (1) KR100502113B1 (de)
CN (1) CN100490003C (de)
DE (1) DE60216838T2 (de)
TW (1) TWI272610B (de)

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JP2005079258A (ja) * 2003-08-29 2005-03-24 Canon Inc 磁性体のエッチング加工方法、磁気抵抗効果膜、および磁気ランダムアクセスメモリ
US6967863B2 (en) * 2004-02-25 2005-11-22 Grandis, Inc. Perpendicular magnetization magnetic element utilizing spin transfer
US7706179B2 (en) * 2004-08-04 2010-04-27 The Florida International University Board Of Trustees Three dimensional magnetic memory and/or recording device
US7075807B2 (en) * 2004-08-18 2006-07-11 Infineon Technologies Ag Magnetic memory with static magnetic offset field
EP1667116B1 (de) * 2004-11-05 2007-01-17 SkiData AG Vorrichtung zum Beschreiben einer Magnetschicht
US7602591B2 (en) * 2005-06-22 2009-10-13 Tdk Corporation Exchange-coupled free layer with out-of-plane magnetization
US8582252B2 (en) * 2005-11-02 2013-11-12 Seagate Technology Llc Magnetic layer with grain refining agent
US7755153B2 (en) * 2006-01-13 2010-07-13 Macronix International Co. Ltd. Structure and method for a magnetic memory device with proximity writing
TWI304586B (en) * 2006-03-20 2008-12-21 Univ Nat Yunlin Sci & Tech System for reducing critical current of magnetic random access memory
US20080173975A1 (en) * 2007-01-22 2008-07-24 International Business Machines Corporation Programmable resistor, switch or vertical memory cell
US7596017B2 (en) * 2007-02-27 2009-09-29 National Yunlin University Of Science And Technology Magnetic random access memory and method of reducing critical current of the same
WO2009001706A1 (ja) * 2007-06-25 2008-12-31 Nec Corporation 磁気抵抗効果素子、および磁気ランダムアクセスメモリ
US8194436B2 (en) * 2007-09-19 2012-06-05 Nec Corporation Magnetic random access memory, write method therefor, and magnetoresistance effect element
US7859025B2 (en) * 2007-12-06 2010-12-28 International Business Machines Corporation Metal ion transistor
US7929258B2 (en) * 2008-01-22 2011-04-19 Seagate Technology Llc Magnetic sensor including a free layer having perpendicular to the plane anisotropy
US8223533B2 (en) * 2008-09-26 2012-07-17 Kabushiki Kaisha Toshiba Magnetoresistive effect device and magnetic memory
JP5316967B2 (ja) 2008-12-02 2013-10-16 富士電機株式会社 磁気メモリー素子及び不揮発性記憶装置
JP4915626B2 (ja) * 2009-03-18 2012-04-11 株式会社東芝 磁気抵抗効果素子および磁気ランダムアクセスメモリ
EP2434540A4 (de) * 2009-05-19 2014-12-03 Fuji Electric Co Ltd Magnetisches speicherelement und speichervorrichtung damit
JP5542831B2 (ja) * 2009-09-24 2014-07-09 株式会社東芝 磁気メモリ
JP5214691B2 (ja) 2010-09-17 2013-06-19 株式会社東芝 磁気メモリ及びその製造方法
JP5542761B2 (ja) * 2011-09-20 2014-07-09 株式会社東芝 磁気抵抗効果素子およびその製造方法
JP5535161B2 (ja) * 2011-09-20 2014-07-02 株式会社東芝 磁気抵抗効果素子およびその製造方法
JP5665707B2 (ja) * 2011-09-21 2015-02-04 株式会社東芝 磁気抵抗効果素子、磁気メモリ及び磁気抵抗効果素子の製造方法
EP2605246B1 (de) * 2011-12-12 2015-02-11 Crocus Technology S.A. Selbstbezogenes Magnetdirektzugriffsspeicherelement mit einer synthetischen Speicherschicht
EP2608208B1 (de) * 2011-12-22 2015-02-11 Crocus Technology S.A. Selbstbezogene MRAM-Zelle und Verfahren zum Beschreiben der Zelle unter Verwendung eines SST-Vorgangs
US8981503B2 (en) * 2012-03-16 2015-03-17 Headway Technologies, Inc. STT-MRAM reference layer having substantially reduced stray field and consisting of a single magnetic domain
JP5542856B2 (ja) * 2012-03-21 2014-07-09 株式会社東芝 磁気抵抗効果素子及び磁気メモリ
KR101446338B1 (ko) * 2012-07-17 2014-10-01 삼성전자주식회사 자기 소자 및 그 제조 방법
US9041130B2 (en) 2013-09-09 2015-05-26 Kabushiki Kaisha Toshiba Magnetic memory device
US9123879B2 (en) 2013-09-09 2015-09-01 Masahiko Nakayama Magnetoresistive element and method of manufacturing the same
US9231196B2 (en) 2013-09-10 2016-01-05 Kuniaki SUGIURA Magnetoresistive element and method of manufacturing the same
US9385304B2 (en) 2013-09-10 2016-07-05 Kabushiki Kaisha Toshiba Magnetic memory and method of manufacturing the same
US9368717B2 (en) 2013-09-10 2016-06-14 Kabushiki Kaisha Toshiba Magnetoresistive element and method for manufacturing the same
US9299917B2 (en) * 2013-09-30 2016-03-29 Northwestern University Magnetic tunnel junctions with control wire
RU2561232C1 (ru) * 2014-06-17 2015-08-27 Федеральное государственное бюджетное учреждение науки институт физики им. Л.В. Киренского Сибирского отделения Российской академии наук Чувствительный элемент на основе магнитоимпеданса
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JP2017224372A (ja) 2016-06-16 2017-12-21 東芝メモリ株式会社 磁気メモリ装置
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CN106772147B (zh) * 2016-11-18 2019-03-19 清华大学 一种中大磁场全象限测量方法
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Also Published As

Publication number Publication date
US6713830B2 (en) 2004-03-30
EP1244117A3 (de) 2003-07-16
KR100502113B1 (ko) 2005-07-19
EP1244117A2 (de) 2002-09-25
CN100490003C (zh) 2009-05-20
US20020167059A1 (en) 2002-11-14
EP1244117B1 (de) 2006-12-20
CN1389870A (zh) 2003-01-08
TWI272610B (en) 2007-02-01
KR20030009084A (ko) 2003-01-29
DE60216838T2 (de) 2007-09-06

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