DE602009000683D1 - Chemisch-mechanische Polierzusammensetzung zum Polieren von Substraten enthaltend ein Material mit niedreiger dielektrizitätskonstante und zugehörige Verfahren - Google Patents

Chemisch-mechanische Polierzusammensetzung zum Polieren von Substraten enthaltend ein Material mit niedreiger dielektrizitätskonstante und zugehörige Verfahren

Info

Publication number
DE602009000683D1
DE602009000683D1 DE602009000683T DE602009000683T DE602009000683D1 DE 602009000683 D1 DE602009000683 D1 DE 602009000683D1 DE 602009000683 T DE602009000683 T DE 602009000683T DE 602009000683 T DE602009000683 T DE 602009000683T DE 602009000683 D1 DE602009000683 D1 DE 602009000683D1
Authority
DE
Germany
Prior art keywords
dielectric constant
chemical mechanical
low dielectric
constant material
substrates containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602009000683T
Other languages
German (de)
English (en)
Inventor
Zhendong Liu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of DE602009000683D1 publication Critical patent/DE602009000683D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0104—Chemical-mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE602009000683T 2008-12-11 2009-03-13 Chemisch-mechanische Polierzusammensetzung zum Polieren von Substraten enthaltend ein Material mit niedreiger dielektrizitätskonstante und zugehörige Verfahren Active DE602009000683D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/332,816 US8071479B2 (en) 2008-12-11 2008-12-11 Chemical mechanical polishing composition and methods relating thereto

Publications (1)

Publication Number Publication Date
DE602009000683D1 true DE602009000683D1 (de) 2011-03-10

Family

ID=41598076

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602009000683T Active DE602009000683D1 (de) 2008-12-11 2009-03-13 Chemisch-mechanische Polierzusammensetzung zum Polieren von Substraten enthaltend ein Material mit niedreiger dielektrizitätskonstante und zugehörige Verfahren

Country Status (7)

Country Link
US (1) US8071479B2 (enExample)
EP (1) EP2196509B1 (enExample)
JP (1) JP5620673B2 (enExample)
KR (1) KR20100067610A (enExample)
CN (1) CN101767295B (enExample)
DE (1) DE602009000683D1 (enExample)
TW (1) TWI478227B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8845394B2 (en) 2012-10-29 2014-09-30 Wayne O. Duescher Bellows driven air floatation abrading workholder
US9199354B2 (en) 2012-10-29 2015-12-01 Wayne O. Duescher Flexible diaphragm post-type floating and rigid abrading workholder
US9039488B2 (en) 2012-10-29 2015-05-26 Wayne O. Duescher Pin driven flexible chamber abrading workholder
US8998678B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Spider arm driven flexible chamber abrading workholder
US8998677B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Bellows driven floatation-type abrading workholder
US9604339B2 (en) 2012-10-29 2017-03-28 Wayne O. Duescher Vacuum-grooved membrane wafer polishing workholder
US9011207B2 (en) 2012-10-29 2015-04-21 Wayne O. Duescher Flexible diaphragm combination floating and rigid abrading workholder
US9233452B2 (en) 2012-10-29 2016-01-12 Wayne O. Duescher Vacuum-grooved membrane abrasive polishing wafer workholder
KR102525356B1 (ko) * 2014-10-21 2023-04-25 씨엠씨 머티리얼즈, 인코포레이티드 코발트 파임 제어제
US9944828B2 (en) 2014-10-21 2018-04-17 Cabot Microelectronics Corporation Slurry for chemical mechanical polishing of cobalt
US10124464B2 (en) 2014-10-21 2018-11-13 Cabot Microelectronics Corporation Corrosion inhibitors and related compositions and methods
TWI580767B (zh) 2014-10-21 2017-05-01 卡博特微電子公司 鈷拋光加速劑
CN109906257B (zh) * 2016-10-17 2021-11-09 Cmc材料股份有限公司 具有改善的凹陷及图案选择性的对氧化物及氮化物有选择性的化学机械抛光组合物
US10926378B2 (en) 2017-07-08 2021-02-23 Wayne O. Duescher Abrasive coated disk islands using magnetic font sheet
US10170335B1 (en) * 2017-09-21 2019-01-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for cobalt
US10640681B1 (en) 2018-10-20 2020-05-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for tungsten
US10597558B1 (en) 2018-10-20 2020-03-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for tungsten
US11691241B1 (en) * 2019-08-05 2023-07-04 Keltech Engineering, Inc. Abrasive lapping head with floating and rigid workpiece carrier

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3371775B2 (ja) 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6375693B1 (en) 1999-05-07 2002-04-23 International Business Machines Corporation Chemical-mechanical planarization of barriers or liners for copper metallurgy
US6409781B1 (en) 2000-05-01 2002-06-25 Advanced Technology Materials, Inc. Polishing slurries for copper and associated materials
US6787061B1 (en) * 2000-11-16 2004-09-07 Intel Corporation Copper polish slurry for reduced interlayer dielectric erosion and method of using same
US7300602B2 (en) 2003-01-23 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective barrier metal polishing solution
US6916742B2 (en) 2003-02-27 2005-07-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Modular barrier removal polishing slurry
US20050056810A1 (en) 2003-09-17 2005-03-17 Jinru Bian Polishing composition for semiconductor wafers
US7300480B2 (en) * 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
US20050076580A1 (en) * 2003-10-10 2005-04-14 Air Products And Chemicals, Inc. Polishing composition and use thereof
US7988878B2 (en) 2004-09-29 2011-08-02 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective barrier slurry for chemical mechanical polishing
US20060110923A1 (en) 2004-11-24 2006-05-25 Zhendong Liu Barrier polishing solution
US20060205218A1 (en) * 2005-03-09 2006-09-14 Mueller Brian L Compositions and methods for chemical mechanical polishing thin films and dielectric materials
CN1731567B (zh) * 2005-06-22 2010-08-18 中国科学院上海微系统与信息技术研究所 集成电路铜互连一步化学机械抛光工艺及相应纳米抛光液
EP1984467B1 (en) 2006-02-03 2012-03-21 Freescale Semiconductor, Inc. Barrier slurry compositions and barrier cmp methods
JP2007214155A (ja) * 2006-02-07 2007-08-23 Fujifilm Corp バリア用研磨液及び化学的機械的研磨方法
US20070298611A1 (en) 2006-06-27 2007-12-27 Jinru Bian Selective barrier slurry for chemical mechanical polishing
CN1884410A (zh) * 2006-07-05 2006-12-27 大连理工大学 一种化学机械抛光单晶氧化镁基片用的抛光液
CN101168647A (zh) * 2006-10-27 2008-04-30 安集微电子（上海）有限公司 一种用于抛光多晶硅的化学机械抛光液
US20080148649A1 (en) * 2006-12-21 2008-06-26 Zhendong Liu Ruthenium-barrier polishing slurry

Also Published As

Publication number Publication date
KR20100067610A (ko) 2010-06-21
JP5620673B2 (ja) 2014-11-05
JP2010153853A (ja) 2010-07-08
US8071479B2 (en) 2011-12-06
CN101767295A (zh) 2010-07-07
EP2196509A1 (en) 2010-06-16
TW201030831A (en) 2010-08-16
CN101767295B (zh) 2012-05-23
TWI478227B (zh) 2015-03-21
US20100151683A1 (en) 2010-06-17
EP2196509B1 (en) 2011-01-26

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