TWI478227B - 用於基板之化學機械研磨之方法 - Google Patents

用於基板之化學機械研磨之方法 Download PDF

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Publication number
TWI478227B
TWI478227B TW098140060A TW98140060A TWI478227B TW I478227 B TWI478227 B TW I478227B TW 098140060 A TW098140060 A TW 098140060A TW 98140060 A TW98140060 A TW 98140060A TW I478227 B TWI478227 B TW I478227B
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TW
Taiwan
Prior art keywords
mechanical polishing
chemical mechanical
polishing composition
hydroxide
weight
Prior art date
Application number
TW098140060A
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English (en)
Chinese (zh)
Other versions
TW201030831A (en
Inventor
劉振東
Original Assignee
羅門哈斯電子材料Ｃｍｐ控股公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 羅門哈斯電子材料Ｃｍｐ控股公司 filed Critical 羅門哈斯電子材料Ｃｍｐ控股公司
Publication of TW201030831A publication Critical patent/TW201030831A/zh
Application granted granted Critical
Publication of TWI478227B publication Critical patent/TWI478227B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0104—Chemical-mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW098140060A 2008-12-11 2009-11-25 用於基板之化學機械研磨之方法 TWI478227B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/332,816 US8071479B2 (en) 2008-12-11 2008-12-11 Chemical mechanical polishing composition and methods relating thereto

Publications (2)

Publication Number Publication Date
TW201030831A TW201030831A (en) 2010-08-16
TWI478227B true TWI478227B (zh) 2015-03-21

Family

ID=41598076

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098140060A TWI478227B (zh) 2008-12-11 2009-11-25 用於基板之化學機械研磨之方法

Country Status (7)

Country Link
US (1) US8071479B2 (enExample)
EP (1) EP2196509B1 (enExample)
JP (1) JP5620673B2 (enExample)
KR (1) KR20100067610A (enExample)
CN (1) CN101767295B (enExample)
DE (1) DE602009000683D1 (enExample)
TW (1) TWI478227B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8998677B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Bellows driven floatation-type abrading workholder
US9233452B2 (en) 2012-10-29 2016-01-12 Wayne O. Duescher Vacuum-grooved membrane abrasive polishing wafer workholder
US8998678B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Spider arm driven flexible chamber abrading workholder
US8845394B2 (en) 2012-10-29 2014-09-30 Wayne O. Duescher Bellows driven air floatation abrading workholder
US9011207B2 (en) 2012-10-29 2015-04-21 Wayne O. Duescher Flexible diaphragm combination floating and rigid abrading workholder
US9604339B2 (en) 2012-10-29 2017-03-28 Wayne O. Duescher Vacuum-grooved membrane wafer polishing workholder
US9039488B2 (en) 2012-10-29 2015-05-26 Wayne O. Duescher Pin driven flexible chamber abrading workholder
US9199354B2 (en) 2012-10-29 2015-12-01 Wayne O. Duescher Flexible diaphragm post-type floating and rigid abrading workholder
KR102538575B1 (ko) 2014-10-21 2023-06-01 씨엠씨 머티리얼즈 엘엘씨 코발트 연마 가속화제
EP3209815B1 (en) 2014-10-21 2021-12-29 CMC Materials, Inc. Corrosion inhibitors and related compositions and methods
US9944828B2 (en) 2014-10-21 2018-04-17 Cabot Microelectronics Corporation Slurry for chemical mechanical polishing of cobalt
KR102525356B1 (ko) * 2014-10-21 2023-04-25 씨엠씨 머티리얼즈, 인코포레이티드 코발트 파임 제어제
EP3526298B1 (en) * 2016-10-17 2024-07-10 CMC Materials LLC Cmp compositions selective for oxide and nitride with improved dishing and pattern selectivity
US10926378B2 (en) 2017-07-08 2021-02-23 Wayne O. Duescher Abrasive coated disk islands using magnetic font sheet
US10170335B1 (en) * 2017-09-21 2019-01-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for cobalt
US10597558B1 (en) 2018-10-20 2020-03-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for tungsten
US10640681B1 (en) 2018-10-20 2020-05-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for tungsten
US11691241B1 (en) * 2019-08-05 2023-07-04 Keltech Engineering, Inc. Abrasive lapping head with floating and rigid workpiece carrier

Citations (3)

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EP1518910A1 (en) * 2003-09-17 2005-03-30 Rohm and Haas Electronic Materials CMP Holdings, Inc. Polishing composition for semiconductor wafers
WO2007102138A2 (en) * 2007-01-02 2007-09-13 Freescale Semiconductor, Inc. Barrier slurry compositions and barrier cmp methods
US20080148649A1 (en) * 2006-12-21 2008-06-26 Zhendong Liu Ruthenium-barrier polishing slurry

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JP3371775B2 (ja) 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6375693B1 (en) 1999-05-07 2002-04-23 International Business Machines Corporation Chemical-mechanical planarization of barriers or liners for copper metallurgy
US6409781B1 (en) 2000-05-01 2002-06-25 Advanced Technology Materials, Inc. Polishing slurries for copper and associated materials
US6787061B1 (en) * 2000-11-16 2004-09-07 Intel Corporation Copper polish slurry for reduced interlayer dielectric erosion and method of using same
US7300602B2 (en) 2003-01-23 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective barrier metal polishing solution
US6916742B2 (en) 2003-02-27 2005-07-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Modular barrier removal polishing slurry
US7300480B2 (en) * 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
US20050076580A1 (en) * 2003-10-10 2005-04-14 Air Products And Chemicals, Inc. Polishing composition and use thereof
US7988878B2 (en) 2004-09-29 2011-08-02 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective barrier slurry for chemical mechanical polishing
US20060110923A1 (en) 2004-11-24 2006-05-25 Zhendong Liu Barrier polishing solution
US20060205218A1 (en) * 2005-03-09 2006-09-14 Mueller Brian L Compositions and methods for chemical mechanical polishing thin films and dielectric materials
CN1731567B (zh) * 2005-06-22 2010-08-18 中国科学院上海微系统与信息技术研究所 集成电路铜互连一步化学机械抛光工艺及相应纳米抛光液
JP2007214155A (ja) * 2006-02-07 2007-08-23 Fujifilm Corp バリア用研磨液及び化学的機械的研磨方法
US20070298611A1 (en) 2006-06-27 2007-12-27 Jinru Bian Selective barrier slurry for chemical mechanical polishing
CN1884410A (zh) * 2006-07-05 2006-12-27 大连理工大学 一种化学机械抛光单晶氧化镁基片用的抛光液
CN101168647A (zh) * 2006-10-27 2008-04-30 安集微电子（上海）有限公司 一种用于抛光多晶硅的化学机械抛光液

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1518910A1 (en) * 2003-09-17 2005-03-30 Rohm and Haas Electronic Materials CMP Holdings, Inc. Polishing composition for semiconductor wafers
US20080148649A1 (en) * 2006-12-21 2008-06-26 Zhendong Liu Ruthenium-barrier polishing slurry
WO2007102138A2 (en) * 2007-01-02 2007-09-13 Freescale Semiconductor, Inc. Barrier slurry compositions and barrier cmp methods

Also Published As

Publication number Publication date
JP2010153853A (ja) 2010-07-08
CN101767295B (zh) 2012-05-23
TW201030831A (en) 2010-08-16
EP2196509A1 (en) 2010-06-16
JP5620673B2 (ja) 2014-11-05
KR20100067610A (ko) 2010-06-21
EP2196509B1 (en) 2011-01-26
CN101767295A (zh) 2010-07-07
US8071479B2 (en) 2011-12-06
US20100151683A1 (en) 2010-06-17
DE602009000683D1 (de) 2011-03-10

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