JP5620673B2 - ケミカルメカニカル研磨組成物およびそれに関する方法 - Google Patents

ケミカルメカニカル研磨組成物およびそれに関する方法 Download PDF

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Publication number
JP5620673B2
JP5620673B2 JP2009279193A JP2009279193A JP5620673B2 JP 5620673 B2 JP5620673 B2 JP 5620673B2 JP 2009279193 A JP2009279193 A JP 2009279193A JP 2009279193 A JP2009279193 A JP 2009279193A JP 5620673 B2 JP5620673 B2 JP 5620673B2
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JP
Japan
Prior art keywords
chemical mechanical
mechanical polishing
polishing composition
weight
substrate
Prior art date
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Expired - Fee Related
Application number
JP2009279193A
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English (en)
Japanese (ja)
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JP2010153853A5 (enExample
JP2010153853A (ja
Inventor
チェントン・リウ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
DuPont Electronic Materials Holding Inc
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Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, DuPont Electronic Materials Holding Inc filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0104—Chemical-mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2009279193A 2008-12-11 2009-12-09 ケミカルメカニカル研磨組成物およびそれに関する方法 Expired - Fee Related JP5620673B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/332,816 2008-12-11
US12/332,816 US8071479B2 (en) 2008-12-11 2008-12-11 Chemical mechanical polishing composition and methods relating thereto

Publications (3)

Publication Number Publication Date
JP2010153853A JP2010153853A (ja) 2010-07-08
JP2010153853A5 JP2010153853A5 (enExample) 2012-12-13
JP5620673B2 true JP5620673B2 (ja) 2014-11-05

Family

ID=41598076

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009279193A Expired - Fee Related JP5620673B2 (ja) 2008-12-11 2009-12-09 ケミカルメカニカル研磨組成物およびそれに関する方法

Country Status (7)

Country Link
US (1) US8071479B2 (enExample)
EP (1) EP2196509B1 (enExample)
JP (1) JP5620673B2 (enExample)
KR (1) KR20100067610A (enExample)
CN (1) CN101767295B (enExample)
DE (1) DE602009000683D1 (enExample)
TW (1) TWI478227B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9011207B2 (en) 2012-10-29 2015-04-21 Wayne O. Duescher Flexible diaphragm combination floating and rigid abrading workholder
US8845394B2 (en) 2012-10-29 2014-09-30 Wayne O. Duescher Bellows driven air floatation abrading workholder
US9199354B2 (en) 2012-10-29 2015-12-01 Wayne O. Duescher Flexible diaphragm post-type floating and rigid abrading workholder
US9233452B2 (en) 2012-10-29 2016-01-12 Wayne O. Duescher Vacuum-grooved membrane abrasive polishing wafer workholder
US9604339B2 (en) 2012-10-29 2017-03-28 Wayne O. Duescher Vacuum-grooved membrane wafer polishing workholder
US8998678B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Spider arm driven flexible chamber abrading workholder
US9039488B2 (en) 2012-10-29 2015-05-26 Wayne O. Duescher Pin driven flexible chamber abrading workholder
US8998677B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Bellows driven floatation-type abrading workholder
TWI580767B (zh) 2014-10-21 2017-05-01 卡博特微電子公司 鈷拋光加速劑
EP3210237B1 (en) * 2014-10-21 2019-05-08 Cabot Microelectronics Corporation Cobalt dishing control agents
US9944828B2 (en) 2014-10-21 2018-04-17 Cabot Microelectronics Corporation Slurry for chemical mechanical polishing of cobalt
WO2016065057A1 (en) 2014-10-21 2016-04-28 Cabot Microelectronics Corporation Corrosion inhibitors and related compositions and methods
EP3526298B1 (en) * 2016-10-17 2024-07-10 CMC Materials LLC Cmp compositions selective for oxide and nitride with improved dishing and pattern selectivity
US10926378B2 (en) 2017-07-08 2021-02-23 Wayne O. Duescher Abrasive coated disk islands using magnetic font sheet
US10170335B1 (en) * 2017-09-21 2019-01-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for cobalt
US10597558B1 (en) 2018-10-20 2020-03-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for tungsten
US10640681B1 (en) 2018-10-20 2020-05-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for tungsten
US11691241B1 (en) * 2019-08-05 2023-07-04 Keltech Engineering, Inc. Abrasive lapping head with floating and rigid workpiece carrier

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3371775B2 (ja) * 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6375693B1 (en) * 1999-05-07 2002-04-23 International Business Machines Corporation Chemical-mechanical planarization of barriers or liners for copper metallurgy
US6409781B1 (en) * 2000-05-01 2002-06-25 Advanced Technology Materials, Inc. Polishing slurries for copper and associated materials
US6787061B1 (en) * 2000-11-16 2004-09-07 Intel Corporation Copper polish slurry for reduced interlayer dielectric erosion and method of using same
US7300602B2 (en) * 2003-01-23 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective barrier metal polishing solution
US6916742B2 (en) * 2003-02-27 2005-07-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Modular barrier removal polishing slurry
US20050056810A1 (en) 2003-09-17 2005-03-17 Jinru Bian Polishing composition for semiconductor wafers
US7300480B2 (en) * 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
US20050076580A1 (en) * 2003-10-10 2005-04-14 Air Products And Chemicals, Inc. Polishing composition and use thereof
US7988878B2 (en) * 2004-09-29 2011-08-02 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective barrier slurry for chemical mechanical polishing
US20060110923A1 (en) * 2004-11-24 2006-05-25 Zhendong Liu Barrier polishing solution
US20060205218A1 (en) * 2005-03-09 2006-09-14 Mueller Brian L Compositions and methods for chemical mechanical polishing thin films and dielectric materials
CN1731567B (zh) * 2005-06-22 2010-08-18 中国科学院上海微系统与信息技术研究所 集成电路铜互连一步化学机械抛光工艺及相应纳米抛光液
WO2007102138A2 (en) 2007-01-02 2007-09-13 Freescale Semiconductor, Inc. Barrier slurry compositions and barrier cmp methods
JP2007214155A (ja) * 2006-02-07 2007-08-23 Fujifilm Corp バリア用研磨液及び化学的機械的研磨方法
US20070298611A1 (en) * 2006-06-27 2007-12-27 Jinru Bian Selective barrier slurry for chemical mechanical polishing
CN1884410A (zh) * 2006-07-05 2006-12-27 大连理工大学 一种化学机械抛光单晶氧化镁基片用的抛光液
CN101168647A (zh) * 2006-10-27 2008-04-30 安集微电子（上海）有限公司 一种用于抛光多晶硅的化学机械抛光液
US20080148649A1 (en) * 2006-12-21 2008-06-26 Zhendong Liu Ruthenium-barrier polishing slurry

Also Published As

Publication number Publication date
DE602009000683D1 (de) 2011-03-10
CN101767295B (zh) 2012-05-23
US8071479B2 (en) 2011-12-06
EP2196509A1 (en) 2010-06-16
TW201030831A (en) 2010-08-16
KR20100067610A (ko) 2010-06-21
US20100151683A1 (en) 2010-06-17
EP2196509B1 (en) 2011-01-26
TWI478227B (zh) 2015-03-21
CN101767295A (zh) 2010-07-07
JP2010153853A (ja) 2010-07-08

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