DE602008006465D1 - Verfahren zur herstellung eines drahtteils in einer integrierten elektronischen schaltung - Google Patents

Verfahren zur herstellung eines drahtteils in einer integrierten elektronischen schaltung

Info

Publication number
DE602008006465D1
DE602008006465D1 DE602008006465T DE602008006465T DE602008006465D1 DE 602008006465 D1 DE602008006465 D1 DE 602008006465D1 DE 602008006465 T DE602008006465 T DE 602008006465T DE 602008006465 T DE602008006465 T DE 602008006465T DE 602008006465 D1 DE602008006465 D1 DE 602008006465D1
Authority
DE
Germany
Prior art keywords
wire portion
electronic circuit
integrated electronic
seed layer
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602008006465T
Other languages
English (en)
Inventor
Philippe Coronel
Benjamin Dumont
Arnaud Pouydebasque
Markus Mueller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
NXP BV
Original Assignee
STMicroelectronics Crolles 2 SAS
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS, NXP BV filed Critical STMicroelectronics Crolles 2 SAS
Publication of DE602008006465D1 publication Critical patent/DE602008006465D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
DE602008006465T 2007-09-26 2008-09-22 Verfahren zur herstellung eines drahtteils in einer integrierten elektronischen schaltung Active DE602008006465D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP07301401 2007-09-26
PCT/EP2008/062622 WO2009040328A1 (en) 2007-09-26 2008-09-22 Process for forming a wire portion in an integrated electronic circuit

Publications (1)

Publication Number Publication Date
DE602008006465D1 true DE602008006465D1 (de) 2011-06-01

Family

ID=40091357

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602008006465T Active DE602008006465D1 (de) 2007-09-26 2008-09-22 Verfahren zur herstellung eines drahtteils in einer integrierten elektronischen schaltung

Country Status (6)

Country Link
US (1) US7960255B2 (de)
EP (1) EP2229690B1 (de)
JP (1) JP2010541229A (de)
AT (1) ATE506696T1 (de)
DE (1) DE602008006465D1 (de)
WO (1) WO2009040328A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8680510B2 (en) * 2010-06-28 2014-03-25 International Business Machines Corporation Method of forming compound semiconductor
GB201321949D0 (en) 2013-12-12 2014-01-29 Ibm Semiconductor nanowire fabrication
US9543440B2 (en) * 2014-06-20 2017-01-10 International Business Machines Corporation High density vertical nanowire stack for field effect transistor
US9449820B2 (en) * 2014-12-22 2016-09-20 International Business Machines Corporation Epitaxial growth techniques for reducing nanowire dimension and pitch
KR102537527B1 (ko) 2018-09-10 2023-05-26 삼성전자 주식회사 집적회로 소자

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3854731B2 (ja) * 1998-03-30 2006-12-06 シャープ株式会社 微細構造の製造方法
US7163864B1 (en) * 2000-10-18 2007-01-16 International Business Machines Corporation Method of fabricating semiconductor side wall fin
US7358121B2 (en) * 2002-08-23 2008-04-15 Intel Corporation Tri-gate devices and methods of fabrication
US7078299B2 (en) * 2003-09-03 2006-07-18 Advanced Micro Devices, Inc. Formation of finFET using a sidewall epitaxial layer
KR100585157B1 (ko) 2004-09-07 2006-05-30 삼성전자주식회사 다수의 와이어 브릿지 채널을 구비한 모스 트랜지스터 및그 제조방법
JP4367358B2 (ja) * 2005-02-28 2009-11-18 セイコーエプソン株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
WO2009040328A1 (en) 2009-04-02
US20100203712A1 (en) 2010-08-12
JP2010541229A (ja) 2010-12-24
EP2229690A1 (de) 2010-09-22
EP2229690B1 (de) 2011-04-20
US7960255B2 (en) 2011-06-14
ATE506696T1 (de) 2011-05-15

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