DE602008005959D1 - Vom Substrat isolierter Finfet-Feldeffekttransistor - Google Patents

Vom Substrat isolierter Finfet-Feldeffekttransistor

Info

Publication number
DE602008005959D1
DE602008005959D1 DE602008005959T DE602008005959T DE602008005959D1 DE 602008005959 D1 DE602008005959 D1 DE 602008005959D1 DE 602008005959 T DE602008005959 T DE 602008005959T DE 602008005959 T DE602008005959 T DE 602008005959T DE 602008005959 D1 DE602008005959 D1 DE 602008005959D1
Authority
DE
Germany
Prior art keywords
isolated
field effect
effect transistor
substrate
finfet field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602008005959T
Other languages
English (en)
Inventor
Damien Lenoble
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Interuniversitair Microelektronica Centrum vzw IMEC
STMicroelectronics Crolles 2 SAS
Original Assignee
Interuniversitair Microelektronica Centrum vzw IMEC
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Interuniversitair Microelektronica Centrum vzw IMEC, STMicroelectronics Crolles 2 SAS filed Critical Interuniversitair Microelektronica Centrum vzw IMEC
Publication of DE602008005959D1 publication Critical patent/DE602008005959D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/90—MOSFET type gate sidewall insulating spacer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/902—FET with metal source region

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
DE602008005959T 2007-06-26 2008-06-19 Vom Substrat isolierter Finfet-Feldeffekttransistor Active DE602008005959D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0704568A FR2918211A1 (fr) 2007-06-26 2007-06-26 Transistor a effet de champ de type finfet isole du substrat

Publications (1)

Publication Number Publication Date
DE602008005959D1 true DE602008005959D1 (de) 2011-05-19

Family

ID=38959679

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602008005959T Active DE602008005959D1 (de) 2007-06-26 2008-06-19 Vom Substrat isolierter Finfet-Feldeffekttransistor

Country Status (4)

Country Link
US (2) US7781315B2 (de)
EP (1) EP2009682B1 (de)
DE (1) DE602008005959D1 (de)
FR (1) FR2918211A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8507948B2 (en) * 2010-12-23 2013-08-13 Intel Corporation Junctionless accumulation-mode devices on prominent architectures, and methods of making same
US8420459B1 (en) 2011-10-20 2013-04-16 International Business Machines Corporation Bulk fin-field effect transistors with well defined isolation
CN103187286B (zh) * 2011-12-29 2016-08-10 中芯国际集成电路制造(上海)有限公司 鳍式场效应晶体管的制作方法
US9236267B2 (en) * 2012-02-09 2016-01-12 Taiwan Semiconductor Manufacturing Company, Ltd. Cut-mask patterning process for fin-like field effect transistor (FinFET) device
KR20130096953A (ko) * 2012-02-23 2013-09-02 삼성전자주식회사 반도체 장치의 제조 방법
US11037923B2 (en) * 2012-06-29 2021-06-15 Intel Corporation Through gate fin isolation
US8946035B2 (en) 2012-09-27 2015-02-03 Taiwan Semiconductor Manufacturing Co., Ltd. Replacement channels for semiconductor devices and methods for forming the same using dopant concentration boost
US9082853B2 (en) 2012-10-31 2015-07-14 International Business Machines Corporation Bulk finFET with punchthrough stopper region and method of fabrication
KR101983633B1 (ko) 2012-11-30 2019-05-29 삼성전자 주식회사 반도체 장치 및 그 제조 방법
US9006055B2 (en) * 2013-01-30 2015-04-14 Globalfoundries Singapore Pte. Ltd. High voltage FINFET structure
CN104078332A (zh) * 2013-03-26 2014-10-01 中国科学院微电子研究所 鳍制造方法
US8975168B2 (en) 2013-05-28 2015-03-10 Stmicroelectronics, Inc. Method for the formation of fin structures for FinFET devices
US9793378B2 (en) 2013-05-31 2017-10-17 Stmicroelectronics, Inc. Fin field effect transistor device with reduced overlap capacitance and enhanced mechanical stability
US20140374807A1 (en) * 2013-06-19 2014-12-25 International Business Machines Corporation METHOD OF DEVICE ISOLATION IN CLADDING Si THROUGH IN SITU DOPING
US9000498B2 (en) * 2013-06-28 2015-04-07 Stmicroelectronics, Inc. FinFET with multiple concentration percentages
US9006077B2 (en) * 2013-08-21 2015-04-14 GlobalFoundries, Inc. Gate length independent silicon-on-nothing (SON) scheme for bulk FinFETs
US9418902B2 (en) 2013-10-10 2016-08-16 Globalfoundries Inc. Forming isolated fins from a substrate
US9496257B2 (en) 2014-06-30 2016-11-15 International Business Machines Corporation Removal of semiconductor growth defects
US20160005849A1 (en) * 2014-07-01 2016-01-07 Qualcomm Incorporated Method and apparatus for 3d concurrent multiple parallel 2d quantum wells
US10276718B2 (en) * 2017-08-31 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET having a relaxation prevention anchor
US11257932B2 (en) * 2020-01-30 2022-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor device structure and method for forming the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020011612A1 (en) * 2000-07-31 2002-01-31 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US6645797B1 (en) 2002-12-06 2003-11-11 Advanced Micro Devices, Inc. Method for forming fins in a FinFET device using sacrificial carbon layer
US7863674B2 (en) * 2003-09-24 2011-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple-gate transistors formed on bulk substrates
US7385247B2 (en) * 2004-01-17 2008-06-10 Samsung Electronics Co., Ltd. At least penta-sided-channel type of FinFET transistor
US7009250B1 (en) * 2004-08-20 2006-03-07 Micron Technology, Inc. FinFET device with reduced DIBL
JP2006237376A (ja) * 2005-02-25 2006-09-07 Toshiba Corp 半導体装置およびその製造方法
US20060252191A1 (en) * 2005-05-03 2006-11-09 Advanced Micro Devices, Inc. Methodology for deposition of doped SEG for raised source/drain regions

Also Published As

Publication number Publication date
US20100276693A1 (en) 2010-11-04
US20090001463A1 (en) 2009-01-01
US7781315B2 (en) 2010-08-24
FR2918211A1 (fr) 2009-01-02
EP2009682B1 (de) 2011-04-06
US7960734B2 (en) 2011-06-14
EP2009682A1 (de) 2008-12-31

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