DE602007010547D1 - Phasenwechsel-Speicherzelle mit Nanoverbundisolator - Google Patents
Phasenwechsel-Speicherzelle mit NanoverbundisolatorInfo
- Publication number
- DE602007010547D1 DE602007010547D1 DE602007010547T DE602007010547T DE602007010547D1 DE 602007010547 D1 DE602007010547 D1 DE 602007010547D1 DE 602007010547 T DE602007010547 T DE 602007010547T DE 602007010547 T DE602007010547 T DE 602007010547T DE 602007010547 D1 DE602007010547 D1 DE 602007010547D1
- Authority
- DE
- Germany
- Prior art keywords
- nanocomposite
- isolator
- memory cell
- phase change
- change memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002114 nanocomposite Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/828—Current flow limiting means within the switching material region, e.g. constrictions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/861—Thermal details
- H10N70/8616—Thermal insulation means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/701—Integrated with dissimilar structures on a common substrate
- Y10S977/72—On an electrically conducting, semi-conducting, or semi-insulating substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/701—Integrated with dissimilar structures on a common substrate
- Y10S977/723—On an electrically insulating substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/778—Nanostructure within specified host or matrix material, e.g. nanocomposite films
- Y10S977/785—Electrically insulating host material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/831—Of specified ceramic or electrically insulating compositions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/490,213 US7453081B2 (en) | 2006-07-20 | 2006-07-20 | Phase change memory cell including nanocomposite insulator |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602007010547D1 true DE602007010547D1 (de) | 2010-12-30 |
Family
ID=38626702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602007010547T Active DE602007010547D1 (de) | 2006-07-20 | 2007-07-16 | Phasenwechsel-Speicherzelle mit Nanoverbundisolator |
Country Status (6)
Country | Link |
---|---|
US (1) | US7453081B2 (de) |
EP (1) | EP1881542B8 (de) |
JP (1) | JP2008078625A (de) |
KR (1) | KR20080009023A (de) |
CN (1) | CN101110468A (de) |
DE (1) | DE602007010547D1 (de) |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7696503B2 (en) | 2005-06-17 | 2010-04-13 | Macronix International Co., Ltd. | Multi-level memory cell having phase change element and asymmetrical thermal boundary |
KR100682969B1 (ko) * | 2005-08-04 | 2007-02-15 | 삼성전자주식회사 | 상변화 물질, 이를 포함하는 상변화 램과 이의 제조 및 동작 방법 |
US7459717B2 (en) * | 2005-11-28 | 2008-12-02 | Macronix International Co., Ltd. | Phase change memory cell and manufacturing method |
JP4991155B2 (ja) * | 2006-01-19 | 2012-08-01 | 株式会社東芝 | 半導体記憶装置 |
US7646006B2 (en) * | 2006-03-30 | 2010-01-12 | International Business Machines Corporation | Three-terminal cascade switch for controlling static power consumption in integrated circuits |
US7545667B2 (en) * | 2006-03-30 | 2009-06-09 | International Business Machines Corporation | Programmable via structure for three dimensional integration technology |
US7394089B2 (en) * | 2006-08-25 | 2008-07-01 | International Business Machines Corporation | Heat-shielded low power PCM-based reprogrammable EFUSE device |
US7749802B2 (en) * | 2007-01-09 | 2010-07-06 | International Business Machines Corporation | Process for chemical vapor deposition of materials with via filling capability and structure formed thereby |
US7411818B1 (en) * | 2007-02-07 | 2008-08-12 | International Business Machines Corporation | Programmable fuse/non-volatile memory structures using externally heated phase change material |
US7732888B2 (en) * | 2007-04-16 | 2010-06-08 | Qimonda Ag | Integrated circuit, method for manufacturing an integrated circuit, memory cell array, memory module, and device |
US8373148B2 (en) * | 2007-04-26 | 2013-02-12 | Spansion Llc | Memory device with improved performance |
US7679163B2 (en) * | 2007-05-14 | 2010-03-16 | Industrial Technology Research Institute | Phase-change memory element |
US7997791B2 (en) * | 2007-07-24 | 2011-08-16 | Qimonda Ag | Temperature sensor, integrated circuit, memory module, and method of collecting temperature treatment data |
US7633079B2 (en) * | 2007-09-06 | 2009-12-15 | International Business Machines Corporation | Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change material |
KR20090075539A (ko) * | 2008-01-04 | 2009-07-08 | 삼성전자주식회사 | 단일 조성의 반금속 박막을 이용한 상변화 메모리 |
TWI375324B (en) * | 2008-01-18 | 2012-10-21 | Univ Nat Taiwan | Phase-change material, memory unit, and method for storing/reading data electrically |
US8426838B2 (en) | 2008-01-25 | 2013-04-23 | Higgs Opl. Capital Llc | Phase-change memory |
US8378328B2 (en) * | 2008-02-22 | 2013-02-19 | International Business Machines Corporation | Phase change memory random access device using single-element phase change material |
US8324605B2 (en) * | 2008-10-02 | 2012-12-04 | Macronix International Co., Ltd. | Dielectric mesh isolated phase change structure for phase change memory |
US8604457B2 (en) | 2008-11-12 | 2013-12-10 | Higgs Opl. Capital Llc | Phase-change memory element |
US8363463B2 (en) | 2009-06-25 | 2013-01-29 | Macronix International Co., Ltd. | Phase change memory having one or more non-constant doping profiles |
JP5692085B2 (ja) | 2009-11-11 | 2015-04-01 | 日本電気株式会社 | 抵抗変化素子、半導体装置、および抵抗変化素子の形成方法 |
KR20110090583A (ko) * | 2010-02-04 | 2011-08-10 | 삼성전자주식회사 | 상변화 메모리 장치 및 그 형성 방법 |
JP5572056B2 (ja) * | 2010-10-20 | 2014-08-13 | 株式会社東芝 | 記憶装置及びその製造方法 |
US8735863B2 (en) * | 2011-01-28 | 2014-05-27 | Privatran | Integrated nonvolatile resistive memory elements |
US8426242B2 (en) | 2011-02-01 | 2013-04-23 | Macronix International Co., Ltd. | Composite target sputtering for forming doped phase change materials |
FR2972849A1 (fr) * | 2011-03-15 | 2012-09-21 | Commissariat Energie Atomique | Cellule memoire |
US8946666B2 (en) | 2011-06-23 | 2015-02-03 | Macronix International Co., Ltd. | Ge-Rich GST-212 phase change memory materials |
CN103733338B (zh) | 2011-06-24 | 2016-10-26 | 慧与发展有限责任合伙企业 | 高可靠性高速忆阻器 |
JP5225479B2 (ja) * | 2011-09-27 | 2013-07-03 | 有限会社 ナプラ | 半導体基板、電子デバイス及びその製造方法 |
US8994489B2 (en) | 2011-10-19 | 2015-03-31 | Micron Technology, Inc. | Fuses, and methods of forming and using fuses |
US8932901B2 (en) | 2011-10-31 | 2015-01-13 | Macronix International Co., Ltd. | Stressed phase change materials |
US8723155B2 (en) | 2011-11-17 | 2014-05-13 | Micron Technology, Inc. | Memory cells and integrated devices |
US9252188B2 (en) | 2011-11-17 | 2016-02-02 | Micron Technology, Inc. | Methods of forming memory cells |
US9093141B2 (en) | 2011-12-16 | 2015-07-28 | Intermec Ip Corp. | Phase change memory devices, method for encoding, and methods for storing data |
US9136467B2 (en) * | 2012-04-30 | 2015-09-15 | Micron Technology, Inc. | Phase change memory cells and methods of forming phase change memory cells |
TWI469408B (zh) * | 2012-05-07 | 2015-01-11 | Univ Feng Chia | 超薄與多層結構相變化記憶體元件 |
US9291297B2 (en) | 2012-12-19 | 2016-03-22 | Elwha Llc | Multi-layer phononic crystal thermal insulators |
US9553262B2 (en) | 2013-02-07 | 2017-01-24 | Micron Technology, Inc. | Arrays of memory cells and methods of forming an array of memory cells |
TWI549229B (zh) | 2014-01-24 | 2016-09-11 | 旺宏電子股份有限公司 | 應用於系統單晶片之記憶體裝置內的多相變化材料 |
US9881971B2 (en) | 2014-04-01 | 2018-01-30 | Micron Technology, Inc. | Memory arrays |
US9343506B2 (en) | 2014-06-04 | 2016-05-17 | Micron Technology, Inc. | Memory arrays with polygonal memory cells having specific sidewall orientations |
US20180068926A1 (en) * | 2015-03-27 | 2018-03-08 | Intel Corporation | Energy storage material for thermal management and associated techniques and configurations |
US9672906B2 (en) | 2015-06-19 | 2017-06-06 | Macronix International Co., Ltd. | Phase change memory with inter-granular switching |
JP2019149473A (ja) | 2018-02-27 | 2019-09-05 | 東芝メモリ株式会社 | 半導体記憶装置およびその製造方法 |
US10483464B1 (en) | 2018-05-31 | 2019-11-19 | Uchicago Argonne, Llc | Resistive switching memory device |
JP6989553B2 (ja) * | 2019-03-18 | 2022-01-05 | 株式会社東芝 | 抵抗変化型メモリ |
CN110335941B (zh) * | 2019-07-03 | 2023-08-18 | 芯盟科技有限公司 | 相变存储器的结构及其形成方法 |
CN111180578A (zh) * | 2019-12-25 | 2020-05-19 | 华东师范大学 | 一种相变材料纳米线及其制备方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
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US6879525B2 (en) * | 2001-10-31 | 2005-04-12 | Hewlett-Packard Development Company, L.P. | Feedback write method for programmable memory |
US20040029706A1 (en) | 2002-02-14 | 2004-02-12 | Barrera Enrique V. | Fabrication of reinforced composite material comprising carbon nanotubes, fullerenes, and vapor-grown carbon fibers for thermal barrier materials, structural ceramics, and multifunctional nanocomposite ceramics |
DE10236439B3 (de) | 2002-08-08 | 2004-02-26 | Infineon Technologies Ag | Speicher-Anordnung, Verfahren zum Betreiben einer Speicher-Anordnung und Verfahren zum Herstellen einer Speicher-Anordnung |
WO2004034482A2 (en) * | 2002-10-11 | 2004-04-22 | Koninklijke Philips Electronics N.V. | Electric device comprising phase change material |
JP2004193346A (ja) * | 2002-12-11 | 2004-07-08 | Nec Corp | 磁気メモリ及び磁気メモリ製造方法 |
KR100504701B1 (ko) * | 2003-06-11 | 2005-08-02 | 삼성전자주식회사 | 상변화 기억 소자 및 그 형성 방법 |
DE102004014487A1 (de) | 2004-03-24 | 2005-11-17 | Infineon Technologies Ag | Speicherbauelement mit in isolierendes Material eingebettetem, aktiven Material |
KR100546406B1 (ko) | 2004-04-10 | 2006-01-26 | 삼성전자주식회사 | 상변화 메모리 소자 제조 방법 |
DE102004041893B4 (de) * | 2004-08-30 | 2006-11-23 | Infineon Technologies Ag | Verfahren zur Herstellung von Speicherbauelementen (PCRAM) mit Speicherzellen auf der Basis einer in ihrem Phasenzustand änderbaren Schicht |
US7113424B2 (en) * | 2004-11-23 | 2006-09-26 | Infineon Technologies Ag | Energy adjusted write pulses in phase-change memories |
JP2006165553A (ja) * | 2004-12-02 | 2006-06-22 | Samsung Electronics Co Ltd | 相変化ナノ粒子を含む相変化物質層を備える相変化メモリ素子及びその製造方法 |
US7355238B2 (en) * | 2004-12-06 | 2008-04-08 | Asahi Glass Company, Limited | Nonvolatile semiconductor memory device having nanoparticles for charge retention |
US20070093564A1 (en) * | 2005-10-25 | 2007-04-26 | Wernsing David G | Foam containing nanoparticles and process for producing a foam |
US7601995B2 (en) * | 2005-10-27 | 2009-10-13 | Infineon Technologies Ag | Integrated circuit having resistive memory cells |
-
2006
- 2006-07-20 US US11/490,213 patent/US7453081B2/en not_active Expired - Fee Related
-
2007
- 2007-07-16 DE DE602007010547T patent/DE602007010547D1/de active Active
- 2007-07-16 EP EP07013911A patent/EP1881542B8/de not_active Expired - Fee Related
- 2007-07-19 CN CNA2007101304767A patent/CN101110468A/zh active Pending
- 2007-07-19 JP JP2007187966A patent/JP2008078625A/ja active Pending
- 2007-07-20 KR KR1020070073077A patent/KR20080009023A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
KR20080009023A (ko) | 2008-01-24 |
US20080017842A1 (en) | 2008-01-24 |
US7453081B2 (en) | 2008-11-18 |
EP1881542B1 (de) | 2010-11-17 |
EP1881542B8 (de) | 2011-01-19 |
JP2008078625A (ja) | 2008-04-03 |
EP1881542A1 (de) | 2008-01-23 |
CN101110468A (zh) | 2008-01-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: QIMONDA AG, 81739 MUENCHEN, DE |