DE602006015944D1 - Epitaxialreaktor mit gerät zur einführung von reaktionsgasen - Google Patents

Epitaxialreaktor mit gerät zur einführung von reaktionsgasen

Info

Publication number
DE602006015944D1
DE602006015944D1 DE602006015944T DE602006015944T DE602006015944D1 DE 602006015944 D1 DE602006015944 D1 DE 602006015944D1 DE 602006015944 T DE602006015944 T DE 602006015944T DE 602006015944 T DE602006015944 T DE 602006015944T DE 602006015944 D1 DE602006015944 D1 DE 602006015944D1
Authority
DE
Germany
Prior art keywords
reaction gases
epitaxial reactor
introducing reaction
supply pipe
introducing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006015944T
Other languages
English (en)
Inventor
Vittorio Pozzetti
Natale Speciale
Gianluca Valente
Franco Preti
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LPE SpA
Original Assignee
LPE SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LPE SpA filed Critical LPE SpA
Publication of DE602006015944D1 publication Critical patent/DE602006015944D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
    • B01J12/02—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor for obtaining at least one reaction product which, at normal temperature, is in the solid state
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/26—Nozzle-type reactors, i.e. the distribution of the initial reactants within the reactor is effected by their introduction or injection through nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J4/00—Feed or outlet devices; Feed or outlet control devices
    • B01J4/001—Feed or outlet devices as such, e.g. feeding tubes
    • B01J4/002—Nozzle-type elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00074—Controlling the temperature by indirect heating or cooling employing heat exchange fluids
    • B01J2219/00119—Heat exchange inside a feeding nozzle or nozzle reactor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
DE602006015944T 2005-05-25 2006-05-23 Epitaxialreaktor mit gerät zur einführung von reaktionsgasen Active DE602006015944D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT000962A ITMI20050962A1 (it) 2005-05-25 2005-05-25 Dispositivo per introurre gas di reazione in una camera di reazione e reattore epitassiale che lo utilizza
PCT/EP2006/062523 WO2006125777A1 (en) 2005-05-25 2006-05-23 Device for introducing reaction gases into a reaction chamber and epitaxial reactor which uses said device

Publications (1)

Publication Number Publication Date
DE602006015944D1 true DE602006015944D1 (de) 2010-09-16

Family

ID=36930240

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006015944T Active DE602006015944D1 (de) 2005-05-25 2006-05-23 Epitaxialreaktor mit gerät zur einführung von reaktionsgasen

Country Status (10)

Country Link
US (1) US20080202424A1 (de)
EP (1) EP1885917B1 (de)
JP (1) JP5289048B2 (de)
KR (1) KR20080032021A (de)
CN (1) CN101203633B (de)
AT (1) ATE476538T1 (de)
DE (1) DE602006015944D1 (de)
IT (1) ITMI20050962A1 (de)
RU (1) RU2007148476A (de)
WO (1) WO2006125777A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITMI20071075A1 (it) * 2007-05-28 2008-11-29 Lpe Spa Reattore per la crescita di cristalli con ingressi raffreddati
JP4591523B2 (ja) * 2008-03-05 2010-12-01 株式会社デンソー 炭化珪素単結晶の製造装置
US8741062B2 (en) * 2008-04-22 2014-06-03 Picosun Oy Apparatus and methods for deposition reactors
KR101638765B1 (ko) * 2011-04-29 2016-07-13 어플라이드 머티어리얼스, 인코포레이티드 반응성 증착 프로세스를 위한 가스 시스템
KR102086048B1 (ko) 2017-07-07 2020-03-06 주식회사 엘지화학 분산판 및 이를 포함하는 정제탑
CN111074237A (zh) * 2018-10-18 2020-04-28 君泰创新（北京）科技有限公司 源瓶
US11309177B2 (en) 2018-11-06 2022-04-19 Stmicroelectronics S.R.L. Apparatus and method for manufacturing a wafer
IT201900000223A1 (it) 2019-01-09 2020-07-09 Lpe Spa Camera di reazione con elemento rotante e reattore per deposizione di materiale semiconduttore
IT201900015416A1 (it) 2019-09-03 2021-03-03 St Microelectronics Srl Apparecchio per la crescita di una fetta di materiale semiconduttore, in particolare di carburo di silicio, e procedimento di fabbricazione associato
CN110699667A (zh) * 2019-11-25 2020-01-17 美尔森银河新材料(烟台)有限公司 一种炭炭坩埚生产装置
CN111020693B (zh) * 2019-12-27 2021-01-29 季华实验室 一种碳化硅外延生长设备的进气装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59219929A (ja) * 1983-05-30 1984-12-11 Sanyo Electric Co Ltd Ｓｉｃ単結晶積層体及びその製造方法
JPS6071596A (ja) * 1983-09-27 1985-04-23 Matsushita Electric Ind Co Ltd 気相成長装置
JPS6168393A (ja) * 1984-09-11 1986-04-08 Touyoko Kagaku Kk ホツトウオ−ル形エピタキシヤル成長装置
JPS61110767A (ja) * 1984-10-31 1986-05-29 Fujitsu Ltd Ｃｖｄ装置
JPH0732128B2 (ja) * 1985-09-11 1995-04-10 株式会社東芝 気相成長装置
JPH05109654A (ja) * 1991-10-16 1993-04-30 Tokyo Electron Ltd 成膜処理装置
JP3168277B2 (ja) * 1993-01-14 2001-05-21 エア・ウォーター株式会社 半導体結晶成長装置
JP3322740B2 (ja) * 1993-12-21 2002-09-09 三菱マテリアル株式会社 半導体基板およびその製造方法
GB9411911D0 (en) * 1994-06-14 1994-08-03 Swan Thomas & Co Ltd Improvements in or relating to chemical vapour deposition
WO1999043874A1 (en) * 1998-02-24 1999-09-02 Northrop Grumman Corporation Ceiling arrangement for an epitaxial growth reactor
US7196283B2 (en) * 2000-03-17 2007-03-27 Applied Materials, Inc. Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface
DE10043601A1 (de) * 2000-09-01 2002-03-14 Aixtron Ag Vorrichtung und Verfahren zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten
JP5034138B2 (ja) * 2001-01-25 2012-09-26 東京エレクトロン株式会社 熱処理方法及び熱処理装置
JP2004532646A (ja) * 2001-06-20 2004-10-28 ラバット・ブルウィング・カンパニイ・リミテッド 組み合わせ連続／バッチ発酵プロセス
JP4179041B2 (ja) * 2003-04-30 2008-11-12 株式会社島津製作所 有機ｅｌ用保護膜の成膜装置、製造方法および有機ｅｌ素子
ITMI20031196A1 (it) * 2003-06-13 2004-12-14 Lpe Spa Sistema per crescere cristalli di carburo di silicio
KR101309334B1 (ko) * 2004-08-02 2013-09-16 비코 인스트루먼츠 인코포레이티드 화학적 기상 증착 반응기용 멀티 가스 분배 인젝터

Also Published As

Publication number Publication date
WO2006125777A1 (en) 2006-11-30
RU2007148476A (ru) 2009-06-27
EP1885917B1 (de) 2010-08-04
CN101203633A (zh) 2008-06-18
EP1885917A1 (de) 2008-02-13
CN101203633B (zh) 2012-05-23
US20080202424A1 (en) 2008-08-28
JP2008543037A (ja) 2008-11-27
ATE476538T1 (de) 2010-08-15
KR20080032021A (ko) 2008-04-14
ITMI20050962A1 (it) 2006-11-26
JP5289048B2 (ja) 2013-09-11

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