DE602006001771D1 - Piezoelektrisches Dünnschichtlaminat und Herstellungsverfahren dafür, akustisches Oberflächenwellenelement, Frequenzfilter, Oszillator, elektronischer Schaltkreis und elektronisches Instrument - Google Patents

Piezoelektrisches Dünnschichtlaminat und Herstellungsverfahren dafür, akustisches Oberflächenwellenelement, Frequenzfilter, Oszillator, elektronischer Schaltkreis und elektronisches Instrument

Info

Publication number
DE602006001771D1
DE602006001771D1 DE200660001771 DE602006001771T DE602006001771D1 DE 602006001771 D1 DE602006001771 D1 DE 602006001771D1 DE 200660001771 DE200660001771 DE 200660001771 DE 602006001771 T DE602006001771 T DE 602006001771T DE 602006001771 D1 DE602006001771 D1 DE 602006001771D1
Authority
DE
Germany
Prior art keywords
oscillator
manufacture
thin film
acoustic wave
surface acoustic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE200660001771
Other languages
English (en)
Inventor
Takamitsu Higuchi
Takeshi Kijima
Mayumi Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of DE602006001771D1 publication Critical patent/DE602006001771D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
    • H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
DE200660001771 2005-03-29 2006-03-29 Piezoelektrisches Dünnschichtlaminat und Herstellungsverfahren dafür, akustisches Oberflächenwellenelement, Frequenzfilter, Oszillator, elektronischer Schaltkreis und elektronisches Instrument Active DE602006001771D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005095554A JP4171918B2 (ja) 2005-03-29 2005-03-29 圧電体膜積層体およびその製造方法、表面弾性波素子、周波数フィルタ、発振器、電子回路、並びに、電子機器

Publications (1)

Publication Number Publication Date
DE602006001771D1 true DE602006001771D1 (de) 2008-08-28

Family

ID=36617324

Family Applications (1)

Application Number Title Priority Date Filing Date
DE200660001771 Active DE602006001771D1 (de) 2005-03-29 2006-03-29 Piezoelektrisches Dünnschichtlaminat und Herstellungsverfahren dafür, akustisches Oberflächenwellenelement, Frequenzfilter, Oszillator, elektronischer Schaltkreis und elektronisches Instrument

Country Status (4)

Country Link
US (1) US7601387B2 (de)
EP (1) EP1708289B1 (de)
JP (1) JP4171918B2 (de)
DE (1) DE602006001771D1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7235917B2 (en) * 2004-08-10 2007-06-26 Canon Kabushiki Kaisha Piezoelectric member element and liquid discharge head comprising element thereof
JP4247629B2 (ja) * 2005-03-04 2009-04-02 セイコーエプソン株式会社 ニオブ酸カリウム堆積体およびその製造方法、表面弾性波素子、周波数フィルタ、発振器、電子回路、並びに、電子機器
JP4247630B2 (ja) * 2005-03-30 2009-04-02 セイコーエプソン株式会社 ニオブ酸カリウム堆積体およびその製造方法、圧電薄膜振動子、周波数フィルタ、発振器、電子回路、並びに、電子機器
JP4442489B2 (ja) * 2005-03-30 2010-03-31 セイコーエプソン株式会社 ニオブ酸カリウム堆積体およびその製造方法、表面弾性波素子、周波数フィルタ、発振器、電子回路、並びに、電子機器
JP4407835B2 (ja) * 2006-03-14 2010-02-03 セイコーエプソン株式会社 圧電体積層体、および圧電体積層体を含むデバイス
JP4253334B2 (ja) * 2006-07-12 2009-04-08 株式会社東芝 ２次元アレイ型超音波プローブ
WO2013018155A1 (ja) 2011-07-29 2013-02-07 株式会社ユーテック 強誘電体膜およびその製造方法
WO2015174265A1 (ja) * 2014-05-15 2015-11-19 コニカミノルタ株式会社 強誘電体薄膜、圧電薄膜付き基板、圧電アクチュエータ、インクジェットヘッドおよびインクジェットプリンタ
JP6714257B2 (ja) * 2015-01-26 2020-06-24 アドバンストマテリアルテクノロジーズ株式会社 加圧式ランプアニール装置、強誘電体膜及びその製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10284762A (ja) * 1995-02-16 1998-10-23 Asahi Chem Ind Co Ltd 表面弾性波を増幅するための積層構造及び増幅器
JP3735759B2 (ja) 1996-08-17 2006-01-18 和彦 山之内 弾性表面波基板
JP2003289230A (ja) 2002-03-27 2003-10-10 Seiko Epson Corp ニオブ酸カリウム薄膜の製造方法、並びに表面弾性波素子、周波数フィルタ、周波数発振器、電子回路、及び電子機器
JP3791614B2 (ja) * 2002-10-24 2006-06-28 セイコーエプソン株式会社 強誘電体膜、強誘電体メモリ装置、圧電素子、半導体素子、圧電アクチュエータ、液体噴射ヘッド及びプリンタ
JP2004224627A (ja) 2003-01-22 2004-08-12 Seiko Epson Corp ニオブ酸カリウム単結晶薄膜の製造方法、表面弾性波素子、周波数フィルタ、周波数発振器、電子回路、および電子機器
JP4385607B2 (ja) 2003-01-29 2009-12-16 セイコーエプソン株式会社 表面弾性波素子、周波数フィルタ、発振器、電子回路並びに電子機器
JP4192648B2 (ja) 2003-03-26 2008-12-10 セイコーエプソン株式会社 ニオブ酸カリウム単結晶薄膜の製造方法、及び表面弾性波素子の製造方法
JP2004292228A (ja) 2003-03-26 2004-10-21 Seiko Epson Corp ニオブ酸カリウム単結晶薄膜の製造方法、表面弾性波素子、周波数フィルタ、周波数発振器、電子回路、及び電子機器
EP1515436A3 (de) 2003-08-29 2005-08-31 Seiko Epson Corporation Akustisches Oberflächenwellenelement und elektronische Apparatur mit dem Element
JP4072689B2 (ja) 2004-03-12 2008-04-09 セイコーエプソン株式会社 ニオブ酸カリウム堆積体およびその製造方法、表面弾性波素子、周波数フィルタ、周波数発振器、電子回路、ならびに電子機器
JP4543985B2 (ja) * 2005-03-24 2010-09-15 セイコーエプソン株式会社 ニオブ酸チタン酸ジルコン酸鉛積層体
JP4247630B2 (ja) * 2005-03-30 2009-04-02 セイコーエプソン株式会社 ニオブ酸カリウム堆積体およびその製造方法、圧電薄膜振動子、周波数フィルタ、発振器、電子回路、並びに、電子機器
JP4442489B2 (ja) * 2005-03-30 2010-03-31 セイコーエプソン株式会社 ニオブ酸カリウム堆積体およびその製造方法、表面弾性波素子、周波数フィルタ、発振器、電子回路、並びに、電子機器

Also Published As

Publication number Publication date
US20060222895A1 (en) 2006-10-05
EP1708289A2 (de) 2006-10-04
JP4171918B2 (ja) 2008-10-29
US7601387B2 (en) 2009-10-13
EP1708289A3 (de) 2007-05-23
JP2006279532A (ja) 2006-10-12
EP1708289B1 (de) 2008-07-16

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