DE602005027789D1 - Überhöhungsstruktur zur Erzeugung von Drahtformungsgebieten - Google Patents

Überhöhungsstruktur zur Erzeugung von Drahtformungsgebieten

Info

Publication number
DE602005027789D1
DE602005027789D1 DE602005027789T DE602005027789T DE602005027789D1 DE 602005027789 D1 DE602005027789 D1 DE 602005027789D1 DE 602005027789 T DE602005027789 T DE 602005027789T DE 602005027789 T DE602005027789 T DE 602005027789T DE 602005027789 D1 DE602005027789 D1 DE 602005027789D1
Authority
DE
Germany
Prior art keywords
production
wire forming
cantilever structure
forming areas
areas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005027789T
Other languages
English (en)
Inventor
Toshimitsu Hirai
Shinri Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of DE602005027789D1 publication Critical patent/DE602005027789D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1241—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
DE602005027789T 2004-10-13 2005-09-27 Überhöhungsstruktur zur Erzeugung von Drahtformungsgebieten Active DE602005027789D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004298450A JP2006114585A (ja) 2004-10-13 2004-10-13 隔壁構造体、隔壁構造体の形成方法、デバイス、電気光学装置及び電子機器

Publications (1)

Publication Number Publication Date
DE602005027789D1 true DE602005027789D1 (de) 2011-06-16

Family

ID=35520744

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005027789T Active DE602005027789D1 (de) 2004-10-13 2005-09-27 Überhöhungsstruktur zur Erzeugung von Drahtformungsgebieten

Country Status (7)

Country Link
US (1) US7667232B2 (de)
EP (1) EP1648210B1 (de)
JP (1) JP2006114585A (de)
KR (1) KR100715298B1 (de)
CN (1) CN100531520C (de)
DE (1) DE602005027789D1 (de)
TW (1) TW200627548A (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4792228B2 (ja) * 2005-01-28 2011-10-12 シャープ株式会社 表示装置
JP4658721B2 (ja) * 2005-07-11 2011-03-23 株式会社フューチャービジョン 表示装置の製造方法
JP2008066567A (ja) * 2006-09-08 2008-03-21 Ricoh Co Ltd 配線パターンとこれを用いた電子素子、有機半導体素子、積層配線パターンおよび積層配線基板
JP4235921B2 (ja) * 2006-09-21 2009-03-11 株式会社フューチャービジョン 液晶表示パネルの製造方法および液晶表示パネル
CN108539043B (zh) * 2018-04-12 2020-07-17 京东方科技集团股份有限公司 一种oled显示面板及其制造方法、显示装置
US11957001B2 (en) * 2018-09-27 2024-04-09 Sharp Kabushiki Kaisha Display device and method of manufacturing display device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3445495B2 (ja) * 1997-07-23 2003-09-08 株式会社東芝 半導体装置
JP3830238B2 (ja) * 1997-08-29 2006-10-04 セイコーエプソン株式会社 アクティブマトリクス型装置
JP4741045B2 (ja) 1998-03-25 2011-08-03 セイコーエプソン株式会社 電気回路、その製造方法および電気回路製造装置
JP2000216330A (ja) 1999-01-26 2000-08-04 Seiko Epson Corp 積層型半導体装置およびその製造方法
CN1557020A (zh) * 2001-09-24 2004-12-22 �ʼҷ����ֵ��ӹɷ����޹�˾ 薄膜光学器件和有机电致发光显示器件的组件及其制造方法
JP3578162B2 (ja) * 2002-04-16 2004-10-20 セイコーエプソン株式会社 パターンの形成方法、パターン形成装置、導電膜配線、デバイスの製造方法、電気光学装置、並びに電子機器
JP3623209B2 (ja) 2002-06-18 2005-02-23 松下電器産業株式会社 半導体装置及びその製造方法
JP4098039B2 (ja) * 2002-08-30 2008-06-11 シャープ株式会社 パターン形成基材およびパターン形成方法
JP4090954B2 (ja) 2003-07-08 2008-05-28 株式会社リコー 基板、基板用基体及び基板の製造方法並びに該製造方法に用いられる版

Also Published As

Publication number Publication date
EP1648210B1 (de) 2011-05-04
KR100715298B1 (ko) 2007-05-08
JP2006114585A (ja) 2006-04-27
EP1648210A1 (de) 2006-04-19
CN1764351A (zh) 2006-04-26
CN100531520C (zh) 2009-08-19
TW200627548A (en) 2006-08-01
US20060078830A1 (en) 2006-04-13
US7667232B2 (en) 2010-02-23
KR20060051893A (ko) 2006-05-19

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