DE602005015374D1 - Verfahren zur Herstellung eines piezoelektrischen Films, laminierte Struktur aus Substrat und piezoelektrischem Film, piezoelektrischer Aktor und Verfahren zu seiner Herstellung - Google Patents

Verfahren zur Herstellung eines piezoelektrischen Films, laminierte Struktur aus Substrat und piezoelektrischem Film, piezoelektrischer Aktor und Verfahren zu seiner Herstellung

Info

Publication number
DE602005015374D1
DE602005015374D1 DE200560015374 DE602005015374T DE602005015374D1 DE 602005015374 D1 DE602005015374 D1 DE 602005015374D1 DE 200560015374 DE200560015374 DE 200560015374 DE 602005015374 T DE602005015374 T DE 602005015374T DE 602005015374 D1 DE602005015374 D1 DE 602005015374D1
Authority
DE
Germany
Prior art keywords
manufacturing
piezoelectric film
piezoelectric
substrate
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE200560015374
Other languages
English (en)
Inventor
Motohiro Yasui
Jun Akedo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Brother Industries Ltd
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Brother Industries Ltd
National Institute of Advanced Industrial Science and Technology AIST
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brother Industries Ltd, National Institute of Advanced Industrial Science and Technology AIST filed Critical Brother Industries Ltd
Publication of DE602005015374D1 publication Critical patent/DE602005015374D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only
    • C23C24/04—Impact or kinetic deposition of particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2047—Membrane type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49401—Fluid pattern dispersing device making, e.g., ink jet

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
DE200560015374 2004-03-30 2005-03-24 Verfahren zur Herstellung eines piezoelektrischen Films, laminierte Struktur aus Substrat und piezoelektrischem Film, piezoelektrischer Aktor und Verfahren zu seiner Herstellung Active DE602005015374D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004099006A JP4849432B2 (ja) 2004-03-30 2004-03-30 圧電膜の製造方法、基板と圧電膜との積層構造、圧電アクチュエータおよびその製造方法

Publications (1)

Publication Number Publication Date
DE602005015374D1 true DE602005015374D1 (de) 2009-08-27

Family

ID=34879963

Family Applications (1)

Application Number Title Priority Date Filing Date
DE200560015374 Active DE602005015374D1 (de) 2004-03-30 2005-03-24 Verfahren zur Herstellung eines piezoelektrischen Films, laminierte Struktur aus Substrat und piezoelektrischem Film, piezoelektrischer Aktor und Verfahren zu seiner Herstellung

Country Status (5)

Country Link
US (1) US7506441B2 (de)
EP (1) EP1583162B1 (de)
JP (1) JP4849432B2 (de)
CN (1) CN100476033C (de)
DE (1) DE602005015374D1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005011009A1 (ja) * 2003-07-28 2005-02-03 Kyocera Corporation 積層型電子部品とその製造方法及び積層型圧電素子
JP2008252071A (ja) 2007-03-06 2008-10-16 Fujifilm Corp 圧電素子とその製造方法、及び液体吐出装置
KR100834515B1 (ko) * 2007-03-07 2008-06-02 삼성전기주식회사 금속 나노입자 에어로졸을 이용한 포토레지스트 적층기판의형성방법, 절연기판의 도금방법, 회로기판의 금속층의표면처리방법 및 적층 세라믹 콘덴서의 제조방법
JP2009164312A (ja) 2007-12-29 2009-07-23 Brother Ind Ltd 圧電アクチュエータの製造方法及び液体吐出ヘッドの製造方法
JP2009184195A (ja) * 2008-02-05 2009-08-20 Brother Ind Ltd フィルタの製造方法及び液体移送装置の製造方法
JP2010199508A (ja) * 2009-02-27 2010-09-09 Brother Ind Ltd 圧電アクチュエータの製造方法、及び、液体移送装置の製造方法
PL2504149T3 (pl) * 2009-11-24 2020-11-30 Kalwar Cft Fusions-Technik Gmbh Sposób obróbki powierzchni podłoża i urządzenie do realizacji sposobu
DE102010055042B4 (de) * 2010-12-17 2013-06-06 Eads Deutschland Gmbh Verfahren und Vorrichtung zur Bildung eines Elektrolytfilmes auf einer Elektrodenoberfläche
WO2016007249A1 (en) * 2014-06-05 2016-01-14 University Of Florida Research Foundation, Inc. Laterally curved actuators of shape memory materials
JP6912463B2 (ja) * 2015-10-28 2021-08-04 コーボ ユーエス，インコーポレイティド バルク音波（ｂａｗ）共振器と基板を貫通する流体ビアを有するセンサー装置
DE102016216278A1 (de) * 2016-08-30 2018-03-01 Siemens Aktiengesellschaft Verfahren zur Aerosoldeposition und Verfahren zur Herstellung eines Keramikteils und Vorrichtung zur Herstellung von Schichten
FR3130073A1 (fr) * 2021-12-06 2023-06-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de transfert d’une couche

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2825366B2 (ja) * 1991-05-23 1998-11-18 松下電器産業株式会社 圧電セラミックス
US5221870A (en) * 1991-09-30 1993-06-22 Sumitomo Electric Industries, Ltd. Surface acoustic wave device
JP3162584B2 (ja) * 1994-02-14 2001-05-08 日本碍子株式会社 圧電／電歪膜型素子及びその製造方法
KR0157924B1 (ko) * 1995-12-23 1998-12-15 문정환 데이타 전송 시스템 및 그 방법
JPH09184080A (ja) * 1995-12-27 1997-07-15 Vacuum Metallurgical Co Ltd 超微粒子による薄膜形成方法、およびその薄膜形成装置
US5945293A (en) * 1997-10-09 1999-08-31 Coulter International Corp. Protein-colloidal metal-aminodextran coated particle and methods of preparation and use
JP3308492B2 (ja) 1998-05-13 2002-07-29 セイコーインスツルメンツ株式会社 圧電アクチュエータ
US6013311A (en) * 1998-06-08 2000-01-11 Eastman Kodak Company Using morphological changes to make piezoelectric transducers
JP4357659B2 (ja) * 1998-10-26 2009-11-04 セイコーインスツル株式会社 圧電体装置及びその製造方法
DE60040107D1 (de) * 1999-01-29 2008-10-09 Seiko Epson Corp Piezoelektrischer Transducer und Anzeigevorrichtung mit elektrophoretischer Tinte, die den piezoelektrischen Transducer benutzt
US6531187B2 (en) * 1999-04-23 2003-03-11 Agency Of Industrial Science And Technology Method of forming a shaped body of brittle ultra fine particles with mechanical impact force and without heating
US6827634B2 (en) * 2000-05-22 2004-12-07 Agency Of Industrial Science And Technology Ultra fine particle film forming method and apparatus
JP2000328223A (ja) 1999-05-25 2000-11-28 Agency Of Ind Science & Technol 積層構造体及びその原料粉、及び、圧電アクチュエータ
JP2002235181A (ja) * 1999-10-12 2002-08-23 National Institute Of Advanced Industrial & Technology 複合構造物及びその製造方法並びに作製装置
CN1243848C (zh) * 1999-10-12 2006-03-01 东陶机器株式会社 复合构造物及其制作方法和制作装置
JP2001152360A (ja) * 1999-11-25 2001-06-05 Ricoh Co Ltd セラミックス誘電体膜の形成方法、セラミックス誘電体膜／基板の積層構造体、及び電気−機械変換素子
JP3835960B2 (ja) * 1999-11-26 2006-10-18 株式会社リコー 圧電セラミックス厚膜構造
US6801958B2 (en) * 1999-12-15 2004-10-05 Texas Instruments Incorporated Method and system for data transfer
JP3338422B2 (ja) * 2000-07-06 2002-10-28 独立行政法人産業技術総合研究所 超微粒子材料吹き付け成膜方法
US6799200B1 (en) * 2000-07-18 2004-09-28 International Business Machines Corporaiton Mechanisms for efficient message passing with copy avoidance in a distributed system
US6297579B1 (en) * 2000-11-13 2001-10-02 Sandia National Laboratories Electron gun controlled smart structure
JP4118589B2 (ja) * 2001-04-12 2008-07-16 独立行政法人産業技術総合研究所 樹脂と脆性材料との複合構造物及びその作製方法
JP2004085974A (ja) * 2002-08-28 2004-03-18 Matsushita Electric Ind Co Ltd 空間光変調器

Also Published As

Publication number Publication date
EP1583162A3 (de) 2006-04-19
CN100476033C (zh) 2009-04-08
JP4849432B2 (ja) 2012-01-11
US20050225208A1 (en) 2005-10-13
JP2005286153A (ja) 2005-10-13
US7506441B2 (en) 2009-03-24
CN1676667A (zh) 2005-10-05
EP1583162A2 (de) 2005-10-05
EP1583162B1 (de) 2009-07-15

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