DE602005006599D1 - Vorrichtung zur erzeugung von extremem uv-licht und anwendung auf eine lithografiequelle mit extremer uv-strahlung - Google Patents

Vorrichtung zur erzeugung von extremem uv-licht und anwendung auf eine lithografiequelle mit extremer uv-strahlung

Info

Publication number
DE602005006599D1
DE602005006599D1 DE602005006599T DE602005006599T DE602005006599D1 DE 602005006599 D1 DE602005006599 D1 DE 602005006599D1 DE 602005006599 T DE602005006599 T DE 602005006599T DE 602005006599 T DE602005006599 T DE 602005006599T DE 602005006599 D1 DE602005006599 D1 DE 602005006599D1
Authority
DE
Germany
Prior art keywords
target
laser beams
focused
extreme
collection axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005006599T
Other languages
English (en)
Inventor
Guy Cheymol
Philippe Cormont
Pierre-Yves Thro
Olivier Sublemontier
Martin Schmidt
Benoit Barthod
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pfeiffer Vacuum SAS
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Alcatel Vacuum Technology France SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Alcatel Vacuum Technology France SAS filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE602005006599D1 publication Critical patent/DE602005006599D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
  • Photoreceptors In Electrophotography (AREA)
DE602005006599T 2004-06-14 2005-06-14 Vorrichtung zur erzeugung von extremem uv-licht und anwendung auf eine lithografiequelle mit extremer uv-strahlung Active DE602005006599D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0406429A FR2871622B1 (fr) 2004-06-14 2004-06-14 Dispositif de generation de lumiere dans l'extreme ultraviolet et application a une source de lithographie par rayonnement dans l'extreme ultraviolet
PCT/FR2005/001465 WO2006000718A1 (fr) 2004-06-14 2005-06-14 Dispositif de generation de lumiere dans l' extreme ultraviolet et application a une source de lithographie par rayonnement dans l'extreme ultraviolet

Publications (1)

Publication Number Publication Date
DE602005006599D1 true DE602005006599D1 (de) 2008-06-19

Family

ID=34946881

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005006599T Active DE602005006599D1 (de) 2004-06-14 2005-06-14 Vorrichtung zur erzeugung von extremem uv-licht und anwendung auf eine lithografiequelle mit extremer uv-strahlung

Country Status (10)

Country Link
US (1) US7399981B2 (de)
EP (1) EP1800188B1 (de)
JP (1) JP2008503078A (de)
KR (1) KR20070058386A (de)
CN (1) CN100541336C (de)
AT (1) ATE394708T1 (de)
DE (1) DE602005006599D1 (de)
FR (1) FR2871622B1 (de)
RU (1) RU2006143322A (de)
WO (1) WO2006000718A1 (de)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7439530B2 (en) * 2005-06-29 2008-10-21 Cymer, Inc. LPP EUV light source drive laser system
US7034320B2 (en) * 2003-03-20 2006-04-25 Intel Corporation Dual hemispherical collectors
US7482609B2 (en) * 2005-02-28 2009-01-27 Cymer, Inc. LPP EUV light source drive laser system
EP2083328B1 (de) * 2008-01-28 2013-06-19 Media Lario s.r.l. Kollektor für streifenden Strahlungseinfall geeignet für lasererzeugte Plasmaquellen
EP2083327B1 (de) * 2008-01-28 2017-11-29 Media Lario s.r.l. Optische Systeme mit verbessertem Kollektor mit streifendem Einfall für EUV- und Röntgenstrahlungsanwendungen
JP5368764B2 (ja) * 2008-10-16 2013-12-18 ギガフォトン株式会社 極端紫外光源装置及び極端紫外光の生成方法
EP2182412A1 (de) * 2008-11-04 2010-05-05 ASML Netherlands B.V. Strahlungsquelle und lithografische Vorrichtung
DE102009047712A1 (de) * 2009-12-09 2011-06-16 Carl Zeiss Smt Gmbh EUV-Lichtquelle für eine Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage
JP2013519211A (ja) 2010-02-09 2013-05-23 エナジェティック・テクノロジー・インコーポレーテッド レーザー駆動の光源
US8587768B2 (en) 2010-04-05 2013-11-19 Media Lario S.R.L. EUV collector system with enhanced EUV radiation collection
DE102010028655A1 (de) 2010-05-06 2011-11-10 Carl Zeiss Smt Gmbh EUV-Kollektor
US20120050706A1 (en) * 2010-08-30 2012-03-01 Media Lario S.R.L Source-collector module with GIC mirror and xenon ice EUV LPP target system
US20120050707A1 (en) * 2010-08-30 2012-03-01 Media Lario S.R.L Source-collector module with GIC mirror and tin wire EUV LPP target system
US8258485B2 (en) * 2010-08-30 2012-09-04 Media Lario Srl Source-collector module with GIC mirror and xenon liquid EUV LPP target system
DE102010047419B4 (de) * 2010-10-01 2013-09-05 Xtreme Technologies Gmbh Verfahren und Vorrichtung zur Erzeugung von EUV-Strahlung aus einem Gasentladungsplasma
WO2013029895A1 (en) 2011-09-02 2013-03-07 Asml Netherlands B.V. Radiation source
KR101958857B1 (ko) 2011-09-02 2019-03-15 에이에스엠엘 네델란즈 비.브이. 방사선 소스
US8895946B2 (en) 2012-02-11 2014-11-25 Media Lario S.R.L. Source-collector modules for EUV lithography employing a GIC mirror and a LPP source
CN103079327B (zh) * 2013-01-05 2015-09-09 中国科学院微电子研究所 一种靶源预整形增强的极紫外光发生装置
US9127981B2 (en) * 2013-08-06 2015-09-08 Cymer, Llc System and method for return beam metrology with optical switch
IL234729B (en) 2013-09-20 2021-02-28 Asml Netherlands Bv A light source operated by a laser and a method using a mode mixer
IL234727B (en) 2013-09-20 2020-09-30 Asml Netherlands Bv A light source operated by a laser in an optical system corrected for deviations and the method of manufacturing the system as mentioned
US9723703B2 (en) * 2014-04-01 2017-08-01 Kla-Tencor Corporation System and method for transverse pumping of laser-sustained plasma
US10186416B2 (en) 2014-05-15 2019-01-22 Excelitas Technologies Corp. Apparatus and a method for operating a variable pressure sealed beam lamp
EP3457429B1 (de) 2014-05-15 2023-11-08 Excelitas Technologies Corp. Lasergesteuerte abgedichtete strahllampe mit einstellbarem druck
US9741553B2 (en) 2014-05-15 2017-08-22 Excelitas Technologies Corp. Elliptical and dual parabolic laser driven sealed beam lamps
KR102211898B1 (ko) * 2014-11-27 2021-02-05 삼성전자주식회사 노광 장치용 액체 누출 감지 장치 및 방법
US10034362B2 (en) * 2014-12-16 2018-07-24 Kla-Tencor Corporation Plasma-based light source
WO2016148608A1 (ru) * 2015-03-16 2016-09-22 Игорь Георгиевич РУДОЙ Источник широкополосного оптического излучения с высокой яркостью
US9576785B2 (en) 2015-05-14 2017-02-21 Excelitas Technologies Corp. Electrodeless single CW laser driven xenon lamp
US10008378B2 (en) 2015-05-14 2018-06-26 Excelitas Technologies Corp. Laser driven sealed beam lamp with improved stability
US10057973B2 (en) 2015-05-14 2018-08-21 Excelitas Technologies Corp. Electrodeless single low power CW laser driven plasma lamp
CN104914680B (zh) * 2015-05-25 2017-03-08 中国科学院上海光学精密机械研究所 基于溶胶射流靶的lpp‑euv光源系统
DE102016205893A1 (de) * 2016-04-08 2017-10-12 Carl Zeiss Smt Gmbh EUV-Kollektor zum Einsatz in einer EUV-Projektionsbelichtungsanlage
RU2658314C1 (ru) * 2016-06-14 2018-06-20 Общество С Ограниченной Ответственностью "Эуф Лабс" Высокояркостный источник эуф-излучения и способ генерации излучения из лазерной плазмы
US9996009B2 (en) 2016-07-27 2018-06-12 Samsung Electronics Co., Ltd. Extreme ultraviolet (EUV) exposure system and method of manufacturing semiconductor device using the same
US10959318B2 (en) * 2018-01-10 2021-03-23 Kla-Tencor Corporation X-ray metrology system with broadband laser produced plasma illuminator
US10109473B1 (en) 2018-01-26 2018-10-23 Excelitas Technologies Corp. Mechanically sealed tube for laser sustained plasma lamp and production method for same
US20200235544A1 (en) * 2019-01-22 2020-07-23 Coherent, Inc. Diode-pumped solid-state laser apparatus for laser annealing
US11086226B1 (en) * 2020-06-03 2021-08-10 Lawrence Livermore National Security, Llc Liquid tamped targets for extreme ultraviolet lithography
RU2765486C1 (ru) * 2021-06-07 2022-01-31 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук Термоядерная мишень непрямого инициирования
CN113433805B (zh) * 2021-07-26 2023-04-14 广东省智能机器人研究院 极紫外光光刻方法和系统
CN113433804B (zh) * 2021-07-26 2023-04-14 广东省智能机器人研究院 极紫外光光刻方法和系统

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4063088A (en) * 1974-02-25 1977-12-13 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of and means for testing a glancing-incidence mirror system of an X-ray telescope
US4704718A (en) * 1985-11-01 1987-11-03 Princeton University Apparatus and method for generating soft X-ray lasing action in a confined plasma column through the use of a picosecond laser
JPH0675200B2 (ja) * 1990-05-18 1994-09-21 株式会社オーク製作所 露光装置用冷却構造
WO1999063790A1 (fr) * 1998-05-29 1999-12-09 Nikon Corporation Source lumineuse plasmatique excitee au laser, appareil d'exposition et son procede de fabrication, et procede de fabrication d'un dispositif
US6307913B1 (en) * 1998-10-27 2001-10-23 Jmar Research, Inc. Shaped source of soft x-ray, extreme ultraviolet and ultraviolet radiation
US6831963B2 (en) * 2000-10-20 2004-12-14 University Of Central Florida EUV, XUV, and X-Ray wavelength sources created from laser plasma produced from liquid metal solutions
FR2802311B1 (fr) * 1999-12-08 2002-01-18 Commissariat Energie Atomique Dispositif de lithographie utilisant une source de rayonnement dans le domaine extreme ultraviolet et des miroirs multicouches a large bande spectrale dans ce domaine
FR2823949A1 (fr) * 2001-04-18 2002-10-25 Commissariat Energie Atomique Procede et dispositif de generation de lumiere dans l'extreme ultraviolet notamment pour la lithographie
US6633048B2 (en) * 2001-05-03 2003-10-14 Northrop Grumman Corporation High output extreme ultraviolet source
JP3944008B2 (ja) * 2002-06-28 2007-07-11 キヤノン株式会社 反射ミラー装置及び露光装置及びデバイス製造方法
KR100589236B1 (ko) * 2002-08-15 2006-06-14 에이에스엠엘 네델란즈 비.브이. 리소그래피 투영장치 및 상기 장치에 사용하는 반사기조립체
US6973164B2 (en) * 2003-06-26 2005-12-06 University Of Central Florida Research Foundation, Inc. Laser-produced plasma EUV light source with pre-pulse enhancement
EP1658615B1 (de) * 2003-08-27 2009-10-14 Carl Zeiss SMT AG Schiefspiegliges normal-incidence-kollektorsystem für lichtquellen, insbesondere euv-plasmaentladungsquellen

Also Published As

Publication number Publication date
ATE394708T1 (de) 2008-05-15
KR20070058386A (ko) 2007-06-08
CN100541336C (zh) 2009-09-16
FR2871622A1 (fr) 2005-12-16
EP1800188B1 (de) 2008-05-07
US20060039435A1 (en) 2006-02-23
EP1800188A1 (de) 2007-06-27
CN101019078A (zh) 2007-08-15
JP2008503078A (ja) 2008-01-31
RU2006143322A (ru) 2008-07-20
FR2871622B1 (fr) 2008-09-12
US7399981B2 (en) 2008-07-15
WO2006000718A1 (fr) 2006-01-05

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