EP2083327B1 - Optische Systeme mit verbessertem Kollektor mit streifendem Einfall für EUV- und Röntgenstrahlungsanwendungen - Google Patents

Optische Systeme mit verbessertem Kollektor mit streifendem Einfall für EUV- und Röntgenstrahlungsanwendungen Download PDF

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EP2083327B1
EP2083327B1 EP08001535.7A EP08001535A EP2083327B1 EP 2083327 B1 EP2083327 B1 EP 2083327B1 EP 08001535 A EP08001535 A EP 08001535A EP 2083327 B1 EP2083327 B1 EP 2083327B1
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Prior art keywords
mirror
collector
radiation
optical system
euv
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French (fr)
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EP2083327A1 (de
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Fabio Zocchi
Pietro Binda
Enrico Benedetti
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Media Lario SRL
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Media Lario SRL
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Priority to EP08001535.7A priority Critical patent/EP2083327B1/de
Priority to US12/735,525 priority patent/US8594277B2/en
Priority to JP2010543445A priority patent/JP5368477B2/ja
Priority to PCT/EP2009/000538 priority patent/WO2009095219A1/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/064—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements having a curved surface

Definitions

  • the present invention relates to reflective optical systems, and more particularly to improved collector optical systems for EUV and X-ray applications.
  • the invention has various applications in scenarios where EUV and X-ray radiation is used, but is particularly useful in lithography and imaging applications.
  • FIG. 1 A simplified block diagram of an EUV lithography system is shown in Fig. 1 (PRIOR ART).
  • the ultra-violet source 102 is normally an hot plasma the emission of which is collected by the collector 104 and delivered to an illuminator 106. The latter illuminates a mask or reticle 108 with the pattern to be transferred to the wafer 110. The image of the mask or reticle is projected onto the wafer 110 by the projection optics box 112.
  • EUV lithography systems are disclosed, for example, in US2004/0265712A1 , US2005/0016679A1 and US2005/01 55624A1 .
  • Each mirror 200 is a thin shell consisting of two sections (surfaces) 202, 204: the first one 202, closer to the source 102 is a hyperboloid whereas the second 204 is an ellipsoid, both with rotational symmetry, with a focus in common.
  • the light source 102 is placed in the focus of the hyperboloid different from the common focus.
  • the light from the source 102 is collected by the hyperbolic section 202, reflected onto the elliptic section 204 and then concentrated to the focus of the ellipsoid, different from the common focus, and known as intermediate focus (IF) 206.
  • IF intermediate focus
  • the performance of the collector 104 is mainly characterized by the collection efficiency and the far field intensity distribution.
  • the collection efficiency is the ratio between the light intensity at intermediate focus 206 and the power emitted by the source 102 into half a sphere.
  • the collection efficiency is related to the geometry of the collector 104, to the reflectivity of each mirror 200, to the spatial and angular distribution of the source 102, to the optical specifications of the illuminator.
  • the far field intensity distribution is the 2D spatial distribution of the light intensity beyond the intermediate focus 206 at distances that depends on the illuminator design but that are normally of the same order of magnitude as the distance between the source 102 and intermediate focus 206.
  • the collector 104 is normally used in conjunction with a hot plasma source 102.
  • the thermal load from UV radiation on the collector 104 is very high and a proper cooling system is required.
  • the cooling system is positioned on the back surface of each mirror 200 in the shadow area that is present on the back side of both the elliptical section 204 and the hyperbolic section 202 (see Fig. 2 (PRIOR ART)).
  • the purpose of the collector 104 in EUV sources is to transfer the largest possible amount of in-band power emitted from the plasma to the next optical stage, the illuminator 106, of the lithographic tool 100 (see Fig. 1 ), the collector efficiency being as defined hereinabove. For a given maximum collection angle on the source side, the collector efficiency is mainly determined by collected angle and by the reflectivity of the coating on the optical surface of the mirrors.
  • a problem with known systems is how to significantly increase collector efficiency.
  • the present invention seeks to address the aforementioned and other issues.
  • a further problem with known systems is that the degree of uniformity of far field intensity distribution for the collector is lower than it might be, thereby affecting collector efficiency.
  • the uniformity of the far field intensity distribution has a direct impact on the illumination uniformity on the mask or reticle 108, thus affecting the quality of the lithographic process.
  • the illuminator 106 is designed to partly compensate for the non-uniformity of the far field intensity distribution, there is a need for a design of the collector 104 that limits the nonuniformity of the far field intensity distribution.
  • the high spatial frequency variation of the far field intensity distribution may be difficult to compensate.
  • the main source of the high spatial frequency variation of the far field intensity distribution is the shadowing due to the thickness of the mirrors 200.
  • Such thickness is limited toward small values by mechanical and thermal considerations. Indeed, enough mechanical stiffness is required to the mirror 200 for manufacturing and integration purposes.
  • the thermal conductance of the mirror 200 must be high enough to transfer the high thermal load produced by the hot plasma to the location of the cooling system.
  • the shadowing due to the mirror thickness can be almost completely avoided with a suitable collector design, i.e. in some cases a collector design is possible whereby the shadowing at far field due to shell thickness is almost completely absent even if the thickness of the shells is not zero but, at the same time, realistic values (from a manufacturing and thermal point of view) are used for the mirror thickness.
  • the use of extended sources 102 helps in reducing the nonuniformity of the far field intensity distribution due to mirror thickness.
  • the illuminator 106 and source 102 specifications do not allow a collector design with the above property.
  • limitations of the optical aperture at the intermediate focus 206 prevent part of the light filling the dips in the far field intensity distribution.
  • US 2008/013680 A1 describes a collector arranged to achieve a homogeneity of illumination of +/-15%.
  • the collector of US 2008/013680 A1 comprises eight mirror shells, each shell representing a Wolter system. Each mirror shell comprises a hyperboloid mirror segment and an ellipsoid mirror segment, both having a conical shape.
  • a collector optical system for extreme ultraviolet (EUV) and X-ray applications in which EUV or X-ray radiation from a radiation source is directed to an image focus to form a far-field intensity distribution, comprising a plurality of mirrors arranged in nested and symmetric configuration about an optical axis that extends through the radiation source, with each mirror having at least first and second reflective surfaces configured to respectively successively grazingly reflect the radiation to form the far-field intensity distribution, characterised in that at least one of the first and second reflective surfaces comprises a polynomial corrective shape arranged to redirect part of the radiation incident thereon in a direction to fill dips in the far-field intensity distribution due to shadowing of the mirror thickness.
  • the or each mirror, the mirror is specified by Table A.1 hereinbelow, where 1 is the innermost mirror.
  • a total of 7 mirrors in nested configuration are provided.
  • the or each mirror comprises a Wolter I mirror.
  • the first reflective surface, closest to the source has a hyperbolic section.
  • the second reflective surface, furthest from the source has an elliptical section.
  • the second reflective surface elliptical section is obtained by rotating an elliptical profile around an axis that is not an axis of symmetry of the ellipse.
  • the or each mirror two of more of the mirrors each have a different geometry.
  • the or each mirror comprises an electroformed monolithic component, and wherein the first and second reflective surfaces are each provided on a respective one of two contiguous sections of the mirror.
  • one or more of the mirrors has mounted thereon, for example on the rear side thereof, one or more devices for the thermal management of the mirror, for example cooling lines, Peltier cells and temperature sensors.
  • one or more devices for the thermal management of the mirror for example cooling lines, Peltier cells and temperature sensors.
  • one or more of the mirrors has mounted thereon, for example on the rear side thereof, one or more devices for the mitigation of debris from the source, for example erosion detectors, solenoids and RF sources.
  • one or more devices for the mitigation of debris from the source for example erosion detectors, solenoids and RF sources.
  • collector optical system for EUV lithography comprising the system of any of claims 1 to 5 of the appended claims.
  • an EUV lithography system comprising: a radiation source, for example a LPP source, the collector optical system of any of claims 1 to 5 of the appended claims; an optical condenser; and a reflective mask.
  • an imaging optical system for EUV or X-ray imaging comprising the system of any of claims 1 to 5 of the appended claims.
  • An advantage of the invention is to compensate the high spatial frequency variation of the far field intensity distribution when this is not possible by a proper design of the Wolter I configuration.
  • the present invention involves suitable correction of the nominal shape of each mirror such that part of the light is redirected in a direction that fills the dips in the far field intensity distribution.
  • This correction can be applied to either the elliptical or hyperbolic part of each Wolter I mirror or to both parts.
  • the correction can be mathematically described by its power expansion up to a given order obtaining a polynomial correction.
  • the amount of the correction must be carefully chosen case by case to optimise the far field intensity distribution. Indeed, a wrong or excessive correction can increase the depth of the dips or produce unwanted peaks at some positions of the far field intensity distribution.
  • references to an "image focus” are references to an image focus or an intermediate focus.
  • collector 104 The design and construction of the collector 104 according to the invention is as set out above in relation to Figs 1 and 2 , except as described hereinafter.
  • Figure 3 depicts an embodiment of a nested collector in accordance with one aspect of the invention. This embodiment is the same as described with reference to Figs 1 and 2 , except as described below.
  • the design here is of a 7-mirror nested Wolter I collector, and the corresponding specifications are listed in Table A.1. However, it will be appreciated by skilled persons that any suitable number of mirrors may be used.
  • the far field intensity distribution simulated by ray tracing for a spherical extended source with a FWHM of 0.5 mm and without the inclusion of the present invention is shown in Fig. 4 .
  • the 6 dips 402 in the far field intensity distribution that are evident in Fig. 4 are due to the shadowing of the mirror thickness.
  • the shadow of the outermost mirror is of course not evident in Fig. 4 .
  • ⁇ r i z k i c 1 z + c 2 z 2 + c 3 z 3
  • ⁇ r i (z) is the variation in the mirror radius
  • z is the position along the optical axis in millimeters measured starting from the joint point between the hyperbolic and the elliptical section of each mirror and pointing from the intermediate focus to the source.
  • the subscript i in the above equation enumerates the mirrors from 1 (innermost mirror) to 7 (outermost mirror).
  • FIG. 5 An example of the above correction for mirror #5 is shown in Fig. 5 .
  • the result of the ray tracing of the collector of Fig. 3 with the corrections given in Table A.2 and Table A.3 is shown in Fig. 6 . It can be noted that the dips in the far field distribution due to the shadowing of the mirror thickness have disappeared.
  • the present invention has been here described with reference to a Wolter I optical design for the collector configuration. However, it may be equally well applied to any optical configuration based on nested mirrors, including, in particular, pure elliptical designs.
  • collector optics for imaging e.g. EUV or X-ray
  • imaging systems incorporating such optics the design of such imaging optics and imaging systems is discussed in, for example, European patent application no. EP 1 882 984 A1 .

Claims (6)

  1. Ein optisches Kollektor-System (104) für den Einsatz von extremer ultravioletter Strahlung (EUV) und Röntgenstrahlung, bei welcher die Ultraviolett-Strahlung oder Röntgenstrahlung von einer Strahlungsquelle (102) aus auf einen Bildfokus gerichtet ist, um eine entfernte Feld-Intensitätsverteilung zu bewirken, einschliessend eine Mehrzahl von Spiegeln (200), die um die optische Achse, welche durch die Strahlungsquelle verläuft, in einer symmetrischen und verschachtelten Konfiguration angeordnet sind, wobei jeder Spiegel wengistens erste und zweite reflektierende Oberflächen (202, 204) aufweist, die so konfiguriert sind, dass sie sukzessive respektive streifend die Strahlung reflektieren und so eine entfernte Feldintensitäts Verteilung erzeugen, dadurch gekennzeichnet, dass wenigstens eine der ersten und zweiten reflektierenden Oberflächen eine polynomische korrigierende Form-Anordnung einschliessen, um einen Teil des lokal auftreffenden Strahls in eine Richtung umzuleiten, um Einbrüche in der entfernten Intensiontätsverteilung aufzufüllen, welche durch die Schatten der Spiegeldicken auftreten.
  2. Optisches Kollektor-System nach Anspruch 1, wobei die besagte korrigierende Form-Anordnung beschrieben ist durch Δ r i z = k i c 1 z + c 2 z 2 + c 3 z 3
    Figure imgb0004
     wobei Δri (z) eine Variation des Spiegel-Radius ist, z ist die Position längs der optischen Achse gemessen von Vereinigungspunkt zwischen dem hyperbolischen und dem elliptischen Abschnitt jedes Spiegels und in Richtung vom Zwischen-Fokus zur Strahlungsquelle gesehen, der Index i bezeichnet die Nummer des Spiegels vom innersten zum äussersten Spiegel, und die Werte für die Parameter ki, c1, c2, und c3 sind in der folgenen Tabelle A.2 und A.3 aufgeführt: Tabelle A.2 Spiegel k Hyperbolie Ellipse 1 0.3 0.2 2 0.3 0.5 3 0.3 0.7 4 0.3 0.8 5 0.3 1 6 0.3 1 7 0.3 1
    Tabelle A.3 Parameter Hyperbolie Ellipse c1 0.001 0.00005 c2 -0.00001 -0.00000035 c3 -0.00000001 -0.0000000005
  3. Optisches Kollektor-System nach einem der Ansprüche 1 oder 2, wobei die erste und zweite reflektierende Oberfläche hyperbolische (202) respektive elliptische (204) Abschnitte einschliesst, und die erste reflektierende Oberfläche näher an der Strahlungsquelle (102) angeordnet ist als die zweite reflektierende Oberfläche.
  4. Optisches Kollektor-System nach einem der Ansprüche 1 bis 3, wobei jeder Spiegel (200) eine elektrogeformte monolithische Komponente einschliesst, und wobei die erste und die zweite reflektierende Oberfläche jeweils entsprechend auf einer von zwei aufeinanderfolgenden Abschnitten des Spiegels angeordnet ist.
  5. Optisches Kollektor-System nach einem der Ansprüche 1 bis 4, wobei einer oder mehrere Spiegel (200) ein jeweils auf dem Spiegel montiertes thermisches Steuergerät aufweist.
  6. EUV Lithografie System, einschliessend:
    • eine Strahlungsquelle (102);
    • ein optisches Kollektorsystem (104) wie in einem der Ansprüche 1 bis 5 beansprucht;
    • einen optischen Kondensor, angeordnet sodass er geeignet ist zum Sammeln von eingesammelter Strahlung vom Kollektorsystem; und
    • eine reflektierende Maske (108), angeordnet sodass sie geeignet ist, kondensierte Strahlung vom optishcen Kondensor zu empfangen.
EP08001535.7A 2008-01-28 2008-01-28 Optische Systeme mit verbessertem Kollektor mit streifendem Einfall für EUV- und Röntgenstrahlungsanwendungen Active EP2083327B1 (de)

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EP08001535.7A EP2083327B1 (de) 2008-01-28 2008-01-28 Optische Systeme mit verbessertem Kollektor mit streifendem Einfall für EUV- und Röntgenstrahlungsanwendungen
US12/735,525 US8594277B2 (en) 2008-01-28 2009-01-28 Grazing incidence collector optical systems for EUV and X-ray applications
JP2010543445A JP5368477B2 (ja) 2008-01-28 2009-01-28 Ｅｕｖ及びｘ線用の改良斜入射集光光学系
PCT/EP2009/000538 WO2009095219A1 (en) 2008-01-28 2009-01-28 Improved grazing incidence collector optical systems for euv and x-ray applications

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JP5368477B2 (ja) 2013-12-18
WO2009095219A1 (en) 2009-08-06
JP2011511435A (ja) 2011-04-07
US8594277B2 (en) 2013-11-26
EP2083327A1 (de) 2009-07-29

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