DE602005004553D1 - Flash-speichereinheit und verfahren zur programmierung einer flash-speichereinheit - Google Patents

Flash-speichereinheit und verfahren zur programmierung einer flash-speichereinheit

Info

Publication number
DE602005004553D1
DE602005004553D1 DE602005004553T DE602005004553T DE602005004553D1 DE 602005004553 D1 DE602005004553 D1 DE 602005004553D1 DE 602005004553 T DE602005004553 T DE 602005004553T DE 602005004553 T DE602005004553 T DE 602005004553T DE 602005004553 D1 DE602005004553 D1 DE 602005004553D1
Authority
DE
Germany
Prior art keywords
flash memory
memory unit
programming
unit
flash
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005004553T
Other languages
English (en)
Other versions
DE602005004553T2 (de
Inventor
Zhigang Wang
Nian Yang
Zhizheng Liu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Spansion LLC
Original Assignee
Spansion LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Spansion LLC filed Critical Spansion LLC
Publication of DE602005004553D1 publication Critical patent/DE602005004553D1/de
Application granted granted Critical
Publication of DE602005004553T2 publication Critical patent/DE602005004553T2/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
DE602005004553T 2004-08-02 2005-04-29 Flash-speichereinheit und verfahren zur programmierung einer flash-speichereinheit Active DE602005004553T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US909693 2004-08-02
US10/909,693 US7042767B2 (en) 2004-08-02 2004-08-02 Flash memory unit and method of programming a flash memory device
PCT/US2005/014979 WO2006022908A1 (en) 2004-08-02 2005-04-29 Flash memory unit and method of programming a flash memory device

Publications (2)

Publication Number Publication Date
DE602005004553D1 true DE602005004553D1 (de) 2008-03-13
DE602005004553T2 DE602005004553T2 (de) 2009-01-29

Family

ID=34968955

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005004553T Active DE602005004553T2 (de) 2004-08-02 2005-04-29 Flash-speichereinheit und verfahren zur programmierung einer flash-speichereinheit

Country Status (8)

Country Link
US (1) US7042767B2 (de)
EP (1) EP1774530B1 (de)
JP (1) JP2008508662A (de)
KR (1) KR100928737B1 (de)
CN (1) CN1993767A (de)
DE (1) DE602005004553T2 (de)
TW (1) TWI373047B (de)
WO (1) WO2006022908A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8587049B2 (en) * 2006-07-17 2013-11-19 Spansion, Llc Memory cell system with charge trap
US7586787B2 (en) * 2007-09-20 2009-09-08 Kilopass Technology Inc. Reducing bit line leakage current in non-volatile memories
US7764547B2 (en) * 2007-12-20 2010-07-27 Sandisk Corporation Regulation of source potential to combat cell source IR drop
US8274829B2 (en) * 2008-06-09 2012-09-25 Aplus Flash Technology, Inc. Row-decoder and source-decoder structures suitable for erase in unit of page, sector and chip of a NOR-type flash operating below +/− 10V BVDS
US8295087B2 (en) * 2008-06-16 2012-10-23 Aplus Flash Technology, Inc. Row-decoder and select gate decoder structures suitable for flashed-based EEPROM operating below +/− 10v BVDS
WO2009154799A1 (en) * 2008-06-20 2009-12-23 Aplus Flash Technology, Inc. An apparatus and method for inhibiting excess leakage current in unselected nonvolatile memory cells in an array
KR102084288B1 (ko) 2012-11-05 2020-03-03 유니버시티 오브 플로리다 리서치 파운데이션, 아이엔씨. 디스플레이의 휘도 보상
CN112863580A (zh) * 2021-01-22 2021-05-28 珠海创飞芯科技有限公司 一种存储器的编程方法及存储器

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5204835A (en) * 1990-06-13 1993-04-20 Waferscale Integration Inc. Eprom virtual ground array
US5346842A (en) * 1992-02-04 1994-09-13 National Semiconductor Corporation Method of making alternate metal/source virtual ground flash EPROM cell array
JP2917722B2 (ja) * 1993-01-07 1999-07-12 日本電気株式会社 電気的書込消去可能な不揮発性半導体記憶装置
US5717634A (en) * 1995-07-19 1998-02-10 Texas Instruments Incorporated Programmable and convertible non-volatile memory array
US6009017A (en) * 1998-03-13 1999-12-28 Macronix International Co., Ltd. Floating gate memory with substrate band-to-band tunneling induced hot electron injection
US5901090A (en) * 1998-05-27 1999-05-04 Advanced Micro Devices Method for erasing flash electrically erasable programmable read-only memory (EEPROM)
US5875130A (en) * 1998-05-27 1999-02-23 Advanced Micro Devices Method for programming flash electrically erasable programmable read-only memory
US6309926B1 (en) * 1998-12-04 2001-10-30 Advanced Micro Devices Thin resist with nitride hard mask for gate etch application
US6046932A (en) * 1999-08-13 2000-04-04 Advanced Micro Devices, Inc. Circuit implementation to quench bit line leakage current in programming and over-erase correction modes in flash EEPROM
US6275415B1 (en) * 1999-10-12 2001-08-14 Advanced Micro Devices, Inc. Multiple byte channel hot electron programming using ramped gate and source bias voltage
JP2001195890A (ja) * 2000-01-12 2001-07-19 Sharp Corp 不揮発性半導体メモリ装置の書込み方式および書込み回路
US6215702B1 (en) * 2000-02-16 2001-04-10 Advanced Micro Devices, Inc. Method of maintaining constant erasing speeds for non-volatile memory cells
US6356482B1 (en) * 2000-02-24 2002-03-12 Advanced Micro Devices, Inc. Using negative gate erase voltage to simultaneously erase two bits from a non-volatile memory cell with an oxide-nitride-oxide (ONO) gate structure
US6246611B1 (en) * 2000-02-28 2001-06-12 Advanced Micro Devices, Inc. System for erasing a memory cell
US6295228B1 (en) * 2000-02-28 2001-09-25 Advanced Micro Devices, Inc. System for programming memory cells
US6331951B1 (en) * 2000-11-21 2001-12-18 Advanced Micro Devices, Inc. Method and system for embedded chip erase verification
US6344994B1 (en) * 2001-01-31 2002-02-05 Advanced Micro Devices Data retention characteristics as a result of high temperature bake
US6400624B1 (en) * 2001-02-26 2002-06-04 Advanced Micro Devices, Inc. Configure registers and loads to tailor a multi-level cell flash design
US6307784B1 (en) * 2001-02-28 2001-10-23 Advanced Micro Devices Negative gate erase
US6456533B1 (en) * 2001-02-28 2002-09-24 Advanced Micro Devices, Inc. Higher program VT and faster programming rates based on improved erase methods
US6442074B1 (en) * 2001-02-28 2002-08-27 Advanced Micro Devices, Inc. Tailored erase method using higher program VT and higher negative gate erase
US6510085B1 (en) * 2001-05-18 2003-01-21 Advanced Micro Devices, Inc. Method of channel hot electron programming for short channel NOR flash arrays
US6522585B2 (en) * 2001-05-25 2003-02-18 Sandisk Corporation Dual-cell soft programming for virtual-ground memory arrays
US6370061B1 (en) * 2001-06-19 2002-04-09 Advanced Micro Devices, Inc. Ceiling test mode to characterize the threshold voltage distribution of over programmed memory cells
JP2003123493A (ja) * 2001-10-12 2003-04-25 Fujitsu Ltd ソース電位を制御してプログラム動作を最適化した不揮発性メモリ

Also Published As

Publication number Publication date
CN1993767A (zh) 2007-07-04
US7042767B2 (en) 2006-05-09
JP2008508662A (ja) 2008-03-21
WO2006022908A1 (en) 2006-03-02
TW200620295A (en) 2006-06-16
KR100928737B1 (ko) 2009-11-27
KR20070038547A (ko) 2007-04-10
EP1774530A1 (de) 2007-04-18
EP1774530B1 (de) 2008-01-23
DE602005004553T2 (de) 2009-01-29
TWI373047B (en) 2012-09-21
US20060023511A1 (en) 2006-02-02

Similar Documents

Publication Publication Date Title
DE602007002041D1 (de) Nichtflüchtige Speichervorrichtung und Verfahren zum Betreiben derselben
DE602005011374D1 (de) Verfahren zur Ansteuerung eines Bildspeichers
DE602005008652D1 (de) Verfahren zur Herstellung einer nichtflüchtigen Halbleiterspeichervorrichtung
DE602006021755D1 (de) System und verfahren zur erkennung einer änderung
DE602006003938D1 (de) System und Verfahren zur Speichersteuerung
DE602004015813D1 (de) Speichervorrichtung und verfahren zur löschung derselben
DE602005004553D1 (de) Flash-speichereinheit und verfahren zur programmierung einer flash-speichereinheit
DE602005022512D1 (de) Vorrichtung und Verfahren zur Datenverwaltung in einem Flash-Speicher
DE602008004375D1 (de) Speichersystem und Verfahren zur Speichersteuerung
DE602005014378D1 (de) Verfahren und einrichtung zum erzeugen einer terahertzwelle
DE602005009464D1 (de) Verfahren und Vorrichtung zum Programmieren eines nichtflüchtigen Speichers
DE602004025783D1 (de) Flash-Speicher und sein Programmierungsverfahren
DE602006010607D1 (de) Verfahren zur automatischen konzeptuellen Hervorhebung in electronischen Text
DE602004027494D1 (de) Automatisches programmierverfahren und einrichtung
DE602005014371D1 (de) Einrichtung und verfahren zur unabhängigen positionierung
DE102008033511A8 (de) Verfahren zum Programmieren eines Flashspeichers, Flashspeicher und Flashspeichersystem
DE602006021341D1 (de) Rauchgasnassentschwefelungsvorrichtung und verfahren zur rauchgasnassentschwefelung
DE602004010032D1 (de) Haltevorrichtung und Verfahren zur Verwendung mit einer Kamera und Blitzlampen
TWI319190B (en) Method and apparatus for programming nonvolatile memory
DE602005009351D1 (de) Verfahren und vorrichtung zur automatischen auswahl einer softareanwendung
DE60324117D1 (de) Multibit Speicheranordnung und Verfahren zur Programmierung und zum Auslesen derselben
DE112005001188A5 (de) Verfahren zur Kalibrierung einer Kamera
DE602006008006D1 (de) Mehrpegelumwandler und verfahren zur umwandlung einer versorgungsspannung
DE502006003971D1 (de) Clipmaschine und Verfahren zum Einrichten einer Clipmaschine
DE602004016281D1 (de) Verfahren und System zur Speicherverwaltung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition