TWI373047B - Flash memory unit and method of programming a flash memory device - Google Patents

Flash memory unit and method of programming a flash memory device

Info

Publication number
TWI373047B
TWI373047B TW094125726A TW94125726A TWI373047B TW I373047 B TWI373047 B TW I373047B TW 094125726 A TW094125726 A TW 094125726A TW 94125726 A TW94125726 A TW 94125726A TW I373047 B TWI373047 B TW I373047B
Authority
TW
Taiwan
Prior art keywords
flash memory
programming
memory device
memory unit
unit
Prior art date
Application number
TW094125726A
Other languages
English (en)
Other versions
TW200620295A (en
Inventor
Zhigang Wang
Nian Yang
Zhizheng Liu
Original Assignee
Spansion Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Spansion Llc filed Critical Spansion Llc
Publication of TW200620295A publication Critical patent/TW200620295A/zh
Application granted granted Critical
Publication of TWI373047B publication Critical patent/TWI373047B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
TW094125726A 2004-08-02 2005-07-29 Flash memory unit and method of programming a flash memory device TWI373047B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/909,693 US7042767B2 (en) 2004-08-02 2004-08-02 Flash memory unit and method of programming a flash memory device

Publications (2)

Publication Number Publication Date
TW200620295A TW200620295A (en) 2006-06-16
TWI373047B true TWI373047B (en) 2012-09-21

Family

ID=34968955

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094125726A TWI373047B (en) 2004-08-02 2005-07-29 Flash memory unit and method of programming a flash memory device

Country Status (8)

Country Link
US (1) US7042767B2 (zh)
EP (1) EP1774530B1 (zh)
JP (1) JP2008508662A (zh)
KR (1) KR100928737B1 (zh)
CN (1) CN1993767A (zh)
DE (1) DE602005004553T2 (zh)
TW (1) TWI373047B (zh)
WO (1) WO2006022908A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8587049B2 (en) * 2006-07-17 2013-11-19 Spansion, Llc Memory cell system with charge trap
US7586787B2 (en) * 2007-09-20 2009-09-08 Kilopass Technology Inc. Reducing bit line leakage current in non-volatile memories
US7764547B2 (en) * 2007-12-20 2010-07-27 Sandisk Corporation Regulation of source potential to combat cell source IR drop
US8274829B2 (en) * 2008-06-09 2012-09-25 Aplus Flash Technology, Inc. Row-decoder and source-decoder structures suitable for erase in unit of page, sector and chip of a NOR-type flash operating below +/− 10V BVDS
US8295087B2 (en) * 2008-06-16 2012-10-23 Aplus Flash Technology, Inc. Row-decoder and select gate decoder structures suitable for flashed-based EEPROM operating below +/− 10v BVDS
US8289775B2 (en) * 2008-06-20 2012-10-16 Aplus Flash Technology, Inc. Apparatus and method for inhibiting excess leakage current in unselected nonvolatile memory cells in an array
EP2915161B1 (en) 2012-11-05 2020-08-19 University of Florida Research Foundation, Inc. Brightness compensation in a display
CN112863580A (zh) * 2021-01-22 2021-05-28 珠海创飞芯科技有限公司 一种存储器的编程方法及存储器

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US5204835A (en) * 1990-06-13 1993-04-20 Waferscale Integration Inc. Eprom virtual ground array
US5346842A (en) * 1992-02-04 1994-09-13 National Semiconductor Corporation Method of making alternate metal/source virtual ground flash EPROM cell array
JP2917722B2 (ja) * 1993-01-07 1999-07-12 日本電気株式会社 電気的書込消去可能な不揮発性半導体記憶装置
US5717634A (en) * 1995-07-19 1998-02-10 Texas Instruments Incorporated Programmable and convertible non-volatile memory array
US6009017A (en) * 1998-03-13 1999-12-28 Macronix International Co., Ltd. Floating gate memory with substrate band-to-band tunneling induced hot electron injection
US5875130A (en) * 1998-05-27 1999-02-23 Advanced Micro Devices Method for programming flash electrically erasable programmable read-only memory
US5901090A (en) * 1998-05-27 1999-05-04 Advanced Micro Devices Method for erasing flash electrically erasable programmable read-only memory (EEPROM)
US6309926B1 (en) * 1998-12-04 2001-10-30 Advanced Micro Devices Thin resist with nitride hard mask for gate etch application
US6046932A (en) * 1999-08-13 2000-04-04 Advanced Micro Devices, Inc. Circuit implementation to quench bit line leakage current in programming and over-erase correction modes in flash EEPROM
US6275415B1 (en) * 1999-10-12 2001-08-14 Advanced Micro Devices, Inc. Multiple byte channel hot electron programming using ramped gate and source bias voltage
JP2001195890A (ja) * 2000-01-12 2001-07-19 Sharp Corp 不揮発性半導体メモリ装置の書込み方式および書込み回路
US6215702B1 (en) * 2000-02-16 2001-04-10 Advanced Micro Devices, Inc. Method of maintaining constant erasing speeds for non-volatile memory cells
US6356482B1 (en) * 2000-02-24 2002-03-12 Advanced Micro Devices, Inc. Using negative gate erase voltage to simultaneously erase two bits from a non-volatile memory cell with an oxide-nitride-oxide (ONO) gate structure
US6246611B1 (en) * 2000-02-28 2001-06-12 Advanced Micro Devices, Inc. System for erasing a memory cell
US6295228B1 (en) * 2000-02-28 2001-09-25 Advanced Micro Devices, Inc. System for programming memory cells
US6331951B1 (en) * 2000-11-21 2001-12-18 Advanced Micro Devices, Inc. Method and system for embedded chip erase verification
US6344994B1 (en) * 2001-01-31 2002-02-05 Advanced Micro Devices Data retention characteristics as a result of high temperature bake
US6400624B1 (en) * 2001-02-26 2002-06-04 Advanced Micro Devices, Inc. Configure registers and loads to tailor a multi-level cell flash design
US6456533B1 (en) * 2001-02-28 2002-09-24 Advanced Micro Devices, Inc. Higher program VT and faster programming rates based on improved erase methods
US6307784B1 (en) * 2001-02-28 2001-10-23 Advanced Micro Devices Negative gate erase
US6442074B1 (en) * 2001-02-28 2002-08-27 Advanced Micro Devices, Inc. Tailored erase method using higher program VT and higher negative gate erase
US6510085B1 (en) * 2001-05-18 2003-01-21 Advanced Micro Devices, Inc. Method of channel hot electron programming for short channel NOR flash arrays
US6522585B2 (en) * 2001-05-25 2003-02-18 Sandisk Corporation Dual-cell soft programming for virtual-ground memory arrays
US6370061B1 (en) * 2001-06-19 2002-04-09 Advanced Micro Devices, Inc. Ceiling test mode to characterize the threshold voltage distribution of over programmed memory cells
JP2003123493A (ja) * 2001-10-12 2003-04-25 Fujitsu Ltd ソース電位を制御してプログラム動作を最適化した不揮発性メモリ

Also Published As

Publication number Publication date
US7042767B2 (en) 2006-05-09
EP1774530B1 (en) 2008-01-23
DE602005004553T2 (de) 2009-01-29
EP1774530A1 (en) 2007-04-18
KR100928737B1 (ko) 2009-11-27
KR20070038547A (ko) 2007-04-10
WO2006022908A1 (en) 2006-03-02
DE602005004553D1 (de) 2008-03-13
TW200620295A (en) 2006-06-16
US20060023511A1 (en) 2006-02-02
JP2008508662A (ja) 2008-03-21
CN1993767A (zh) 2007-07-04

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