DE602005002110D1 - Polymerisierbare fluorierte Verbindung, Herstellungsverfahren, Polymer, Resistzusammenstellung und Strukturierungsverfahren - Google Patents

Polymerisierbare fluorierte Verbindung, Herstellungsverfahren, Polymer, Resistzusammenstellung und Strukturierungsverfahren

Info

Publication number
DE602005002110D1
DE602005002110D1 DE602005002110T DE602005002110T DE602005002110D1 DE 602005002110 D1 DE602005002110 D1 DE 602005002110D1 DE 602005002110 T DE602005002110 T DE 602005002110T DE 602005002110 T DE602005002110 T DE 602005002110T DE 602005002110 D1 DE602005002110 D1 DE 602005002110D1
Authority
DE
Germany
Prior art keywords
polymer
resist composition
fluorinated compound
polymerizable fluorinated
preparation process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005002110T
Other languages
English (en)
Other versions
DE602005002110T2 (de
Inventor
Yuji Harada
Jun Hatakeyama
Takeru Watanabe
Takeshi Kinsho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Publication of DE602005002110D1 publication Critical patent/DE602005002110D1/de
Application granted granted Critical
Publication of DE602005002110T2 publication Critical patent/DE602005002110T2/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D309/00—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only ring hetero atom, not condensed with other rings
    • C07D309/02—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only ring hetero atom, not condensed with other rings having no double bonds between ring members or between ring members and non-ring members
    • C07D309/08—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only ring hetero atom, not condensed with other rings having no double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C07D309/10—Oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/22—Esters containing halogen
    • C08F220/24—Esters containing halogen containing perhaloalkyl radicals
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/50—Improvements relating to the production of bulk chemicals
    • Y02P20/55—Design of synthesis routes, e.g. reducing the use of auxiliary or protecting groups

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Pyrane Compounds (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polymerisation Methods In General (AREA)
DE602005002110T 2004-10-28 2005-10-28 Polymerisierbare fluorierte Verbindung, Herstellungsverfahren, Polymer, Resistzusammenstellung und Strukturierungsverfahren Active DE602005002110T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004313903 2004-10-28
JP2004313903A JP4431888B2 (ja) 2004-10-28 2004-10-28 含フッ素重合性化合物、その製造方法、この化合物から得られる高分子化合物、レジスト材料及びこれを用いたパターン形成方法

Publications (2)

Publication Number Publication Date
DE602005002110D1 true DE602005002110D1 (de) 2007-10-04
DE602005002110T2 DE602005002110T2 (de) 2008-05-21

Family

ID=35589451

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005002110T Active DE602005002110T2 (de) 2004-10-28 2005-10-28 Polymerisierbare fluorierte Verbindung, Herstellungsverfahren, Polymer, Resistzusammenstellung und Strukturierungsverfahren

Country Status (6)

Country Link
US (1) US7592407B2 (de)
EP (1) EP1652846B1 (de)
JP (1) JP4431888B2 (de)
KR (1) KR101011896B1 (de)
DE (1) DE602005002110T2 (de)
TW (1) TWI318985B (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI300415B (en) * 2004-10-28 2008-09-01 Shinetsu Chemical Co Fluorinated monomer having cyclic structure, making method, polymer, photoresist composition and patterning process
JP4774302B2 (ja) * 2005-01-24 2011-09-14 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
TWI530759B (zh) 2005-01-24 2016-04-21 富士軟片股份有限公司 適用於浸漬曝光之正型光阻組成物及使用它之圖案形成方法
JP4796792B2 (ja) 2005-06-28 2011-10-19 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
JP4571598B2 (ja) * 2006-06-27 2010-10-27 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP5136417B2 (ja) 2006-08-04 2013-02-06 Ｊｓｒ株式会社 パターン形成方法、上層膜形成用組成物、及び下層膜形成用組成物
JPWO2008032716A1 (ja) * 2006-09-12 2010-01-28 旭硝子株式会社 リソグラフィー用レジスト材料およびレジストパターンの形成方法
JP2008129389A (ja) * 2006-11-22 2008-06-05 Shin Etsu Chem Co Ltd ポジ型レジスト材料及びパターン形成方法
JP4512607B2 (ja) 2007-03-22 2010-07-28 信越化学工業株式会社 マイクロアレイ作製用基板の製造方法
JP4359629B2 (ja) * 2007-05-02 2009-11-04 信越化学工業株式会社 化学増幅型レジスト組成物の製造方法
JP4475435B2 (ja) * 2007-07-30 2010-06-09 信越化学工業株式会社 含フッ素単量体、含フッ素高分子化合物、レジスト材料及びパターン形成方法
US7914967B2 (en) 2007-08-03 2011-03-29 Tokyo Ohka Kogyo Co., Ltd. Fluorine-containing compound, resist composition for immersion exposure, and method of forming resist pattern
US8003309B2 (en) 2008-01-16 2011-08-23 International Business Machines Corporation Photoresist compositions and methods of use in high index immersion lithography
JP5088503B2 (ja) * 2008-10-30 2012-12-05 信越化学工業株式会社 環状アセタール構造を有する含フッ素単量体
JP4666190B2 (ja) * 2008-10-30 2011-04-06 信越化学工業株式会社 レジスト材料及びパターン形成方法
TWI424994B (zh) 2008-10-30 2014-02-01 Shinetsu Chemical Co 具有環狀縮醛構造之含氟單體、高分子化合物、光阻保護膜材料、光阻材料、圖型之形成方法
JP4774465B2 (ja) * 2010-06-28 2011-09-14 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
JP5572643B2 (ja) * 2012-01-23 2014-08-13 富士フイルム株式会社 レジスト組成物及び該レジスト組成物を用いたパターン形成方法
JP5857014B2 (ja) * 2012-09-27 2016-02-10 富士フイルム株式会社 光インプリント用硬化性組成物、パターン形成方法およびパターン
CN105777808B (zh) 2014-12-23 2018-11-09 中国人民解放军军事医学科学院毒物药物研究所 替唑尼特磷酸酯和烷基磺酸酯及其在药学中的应用
KR102325382B1 (ko) 2019-11-13 2021-11-11 장건수 생면 제조장치

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
DE3750275T3 (de) 1986-06-13 1998-10-01 Microsi Inc Lackzusammensetzung und -anwendung.
US5310619A (en) * 1986-06-13 1994-05-10 Microsi, Inc. Resist compositions comprising a phenolic resin, an acid forming onium salt and a tert-butyl ester or tert-butyl carbonate which is acid-cleavable
JP3297272B2 (ja) 1995-07-14 2002-07-02 富士通株式会社 レジスト組成物及びレジストパターンの形成方法
JP3751065B2 (ja) 1995-06-28 2006-03-01 富士通株式会社 レジスト材料及びレジストパターンの形成方法
US6200725B1 (en) * 1995-06-28 2001-03-13 Fujitsu Limited Chemically amplified resist compositions and process for the formation of resist patterns
US6013416A (en) * 1995-06-28 2000-01-11 Fujitsu Limited Chemically amplified resist compositions and process for the formation of resist patterns
JPH09230595A (ja) 1996-02-26 1997-09-05 Nippon Zeon Co Ltd レジスト組成物およびその利用
WO1997033198A1 (en) 1996-03-07 1997-09-12 The B.F. Goodrich Company Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
JPH10251245A (ja) 1997-03-10 1998-09-22 Kashima Sekiyu Kk 光学活性ピラン誘導体
JP3042618B2 (ja) 1998-07-03 2000-05-15 日本電気株式会社 ラクトン構造を有する（メタ）アクリレート誘導体、重合体、フォトレジスト組成物、及びパターン形成方法
KR100382960B1 (ko) * 1998-07-03 2003-05-09 닛뽕덴끼 가부시끼가이샤 락톤 구조를 갖는 (메트)아크릴레이트 유도체, 중합체,포토레지스트 조성물, 및 이것을 사용한 패턴 형성 방법
JP4131062B2 (ja) 1998-09-25 2008-08-13 信越化学工業株式会社 新規なラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法
CN1277854C (zh) * 2001-02-09 2006-10-04 旭硝子株式会社 含氟化合物、含氟聚合物及其制造方法
JP4083399B2 (ja) * 2001-07-24 2008-04-30 セントラル硝子株式会社 含フッ素重合性単量体およびそれを用いた高分子化合物
JP2003330196A (ja) 2002-03-05 2003-11-19 Jsr Corp 感放射線性樹脂組成物
JPWO2004018534A1 (ja) * 2002-08-21 2005-12-08 旭硝子株式会社 含フッ素化合物、含フッ素ポリマー及びその製造方法
US6919160B2 (en) 2003-02-20 2005-07-19 Air Products And Chemicals, Inc. Acrylic compounds for sub-200 nm photoresist compositions and methods for making and using same

Also Published As

Publication number Publication date
TWI318985B (en) 2010-01-01
TW200621813A (en) 2006-07-01
EP1652846B1 (de) 2007-08-22
KR101011896B1 (ko) 2011-02-01
JP2006124314A (ja) 2006-05-18
DE602005002110T2 (de) 2008-05-21
EP1652846A1 (de) 2006-05-03
US20060094817A1 (en) 2006-05-04
KR20060052244A (ko) 2006-05-19
JP4431888B2 (ja) 2010-03-17
US7592407B2 (en) 2009-09-22

Similar Documents

Publication Publication Date Title
DE602005002110D1 (de) Polymerisierbare fluorierte Verbindung, Herstellungsverfahren, Polymer, Resistzusammenstellung und Strukturierungsverfahren
TWI350833B (en) Novel ester compound, polymer, resist composition, and patterning process
TWI371455B (en) Polymer, resist composition and patterning process
DE602004021120D1 (de) Photopolymerisierbare zusammensetzung.
TWI349678B (en) Lactone-containing compound, polymer, resist composition, and patterning process
MA28948B1 (fr) Composition pesticide
DK1765327T3 (da) Forbindelser, sammensætninger og fremgangsmåder
DK1817309T3 (da) Acetamidforbindelser som fungicider
DE602006020674D1 (de) Polymerzusammensetzung
ATE477257T1 (de) Piperidinylamino-thienoä2,3-dü- pyrimidinverbindungen
NO20053161D0 (no) Mikrobedrepende sammensetning.
DE602006001972D1 (de) Silsesquioxan Mischung, Methode zu deren Herstellung, Resistzusammensetzung und Strukturierungsprozess
DE602005010294D1 (de) Polymerisationshärtbare zusammensetzung
TWI348593B (en) Amine compound, chemically amplified resist composition and patterning process
DE602005012598D1 (de) Imidazoä1,2-aüpyridinverbindungen, zusammensetzungen, anwendungen und verfahren, die damit in zusammenhang stehen
DE602005027222D1 (de) Schaumbare zusammensetzung
NO20080412L (no) Ny fysiologisk forbindelse Nesfatin, forbindelse relevant dertil og anvendelse av forbindelsene
DE502007005902D1 (de) -methyl-19-nor-20- spirox-4-en-3-one), sowie diese enthaltende pharmazeutische präparate
BRPI0619911A2 (pt) composto, pró-droga, agente farmacêutico, e, uso do composto
DE602006018391D1 (de) Photoresistmonomer, dessen Polymer und diesen enthaltende Fotolackzusammensetzung
BRPI0614413A2 (pt) composto, e, composição farmacêutica
DE602004024220D1 (de) Pharmazeutische modafinil-zusammensetzungen mit modifizierter freisetzung
ITMI20030774A1 (it) Polimeri perfluorurati.
DK1778265T3 (da) Guanylhydrazoneforbindelser, sammensætninger, fremgangsmåder og anvendelse
BRPI0614412A2 (pt) composto, e, composição farmacêutica

Legal Events

Date Code Title Description
8381 Inventor (new situation)

Inventor name: HARADA, YUJI, KUBIKI-KU, JOETSU-SHI, NIIGATA-, JP

Inventor name: KINSHO, TAKESHI, KUBIKI-KU, JOETSU-SHI, NIIGA, JP

Inventor name: HATAKEYAMA, JUN, KUBIKI-KU, JOETSU-SHI, NIIGA, JP

Inventor name: WATANABE, TAKERU, KUBIKI-KU, JOETSU-SHI, NIIG, JP

8364 No opposition during term of opposition