DE602004027183D1 - Verfahren zum Formen von Verdrahtung und Elektrode - Google Patents

Verfahren zum Formen von Verdrahtung und Elektrode

Info

Publication number
DE602004027183D1
DE602004027183D1 DE602004027183T DE602004027183T DE602004027183D1 DE 602004027183 D1 DE602004027183 D1 DE 602004027183D1 DE 602004027183 T DE602004027183 T DE 602004027183T DE 602004027183 T DE602004027183 T DE 602004027183T DE 602004027183 D1 DE602004027183 D1 DE 602004027183D1
Authority
DE
Germany
Prior art keywords
electrode
forming wiring
wiring
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004027183T
Other languages
English (en)
Inventor
Yasuaki Yokoyama
Isamu Yonekura
Takashi Satoh
Tamaki Wakasaki
Yasumasa Takeuchi
Masayuki Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Sharp Corp
Original Assignee
JSR Corp
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp, Sharp Corp filed Critical JSR Corp
Publication of DE602004027183D1 publication Critical patent/DE602004027183D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/06—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Paints Or Removers (AREA)
  • Chemically Coating (AREA)
DE602004027183T 2003-03-28 2004-03-25 Verfahren zum Formen von Verdrahtung und Elektrode Expired - Lifetime DE602004027183D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003091789A JP3920802B2 (ja) 2003-03-28 2003-03-28 配線、電極およびそれらの形成方法

Publications (1)

Publication Number Publication Date
DE602004027183D1 true DE602004027183D1 (de) 2010-07-01

Family

ID=32821617

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004027183T Expired - Lifetime DE602004027183D1 (de) 2003-03-28 2004-03-25 Verfahren zum Formen von Verdrahtung und Elektrode

Country Status (7)

Country Link
US (2) US7071084B2 (de)
EP (2) EP2204472A3 (de)
JP (1) JP3920802B2 (de)
KR (1) KR100684215B1 (de)
CN (1) CN1543293A (de)
DE (1) DE602004027183D1 (de)
TW (1) TWI244881B (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3920802B2 (ja) 2003-03-28 2007-05-30 Ｊｓｒ株式会社 配線、電極およびそれらの形成方法
US7547978B2 (en) * 2004-06-14 2009-06-16 Micron Technology, Inc. Underfill and encapsulation of semiconductor assemblies with materials having differing properties
JP4148933B2 (ja) * 2004-08-31 2008-09-10 シャープ株式会社 機能膜の製造方法、機能膜形成用塗液、機能素子、電子デバイス及び表示装置
US7235431B2 (en) * 2004-09-02 2007-06-26 Micron Technology, Inc. Methods for packaging a plurality of semiconductor dice using a flowable dielectric material
JP5093448B2 (ja) * 2005-01-19 2012-12-12 Ｊｓｒ株式会社 トレンチ埋め込み方法
JP2006213943A (ja) * 2005-02-01 2006-08-17 Jsr Corp アルミニウム膜の形成方法
JP4892839B2 (ja) * 2005-02-25 2012-03-07 Ｊｓｒ株式会社 アルミニウム膜を形成する方法
TWI297513B (en) * 2005-10-06 2008-06-01 Ind Tech Res Inst Electrode and method for forming the same
JP4815199B2 (ja) * 2005-11-30 2011-11-16 Ｊｓｒ株式会社 コーティング用組成物を用いたアルミニウム膜の形成方法およびアルミニウム膜
JP4783178B2 (ja) * 2006-03-03 2011-09-28 Ｊｓｒ株式会社 アルミニウム微粒子分散フィルムおよびその形成用組成物並びに形成方法
JP4706544B2 (ja) * 2006-04-14 2011-06-22 Ｊｓｒ株式会社 アルミナ膜形成方法
US8617997B2 (en) * 2007-08-21 2013-12-31 Cree, Inc. Selective wet etching of gold-tin based solder
US7923298B2 (en) * 2007-09-07 2011-04-12 Micron Technology, Inc. Imager die package and methods of packaging an imager die on a temporary carrier
US10586689B2 (en) * 2009-07-31 2020-03-10 Guardian Europe S.A.R.L. Sputtering apparatus including cathode with rotatable targets, and related methods
CN102713002B (zh) 2010-01-28 2014-08-27 独立行政法人科学技术振兴机构 图案化导电膜的形成方法
WO2012053433A1 (ja) * 2010-10-22 2012-04-26 Jsr株式会社 アルミナ膜形成方法
WO2012053436A1 (ja) * 2010-10-22 2012-04-26 Jsr株式会社 アルミナ膜形成用組成物及びアルミナ膜形成方法
US8574665B2 (en) * 2011-06-06 2013-11-05 Xerox Corporation Palladium precursor composition
TWI514572B (zh) * 2011-06-10 2015-12-21 E Ink Holdings Inc 金屬氧化物半導體電晶體
CN115073514B (zh) * 2022-07-04 2024-05-24 浙江博瑞电子科技有限公司 一种四（二甲氨基）钛的新型制备方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3244554A (en) * 1962-10-10 1966-04-05 Ethyl Corp Metal alloy plating process
US3462288A (en) * 1966-06-20 1969-08-19 Dow Chemical Co Aluminum plating process
GB1178954A (en) * 1968-04-19 1970-01-28 Continental Oil Co Method of Aluminum Plating with Diethylaluminum Hydride
US3705051A (en) * 1970-12-10 1972-12-05 Ethyl Corp Metal plating process
JPH0627327B2 (ja) * 1987-06-30 1994-04-13 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン Ｉｂ族金属の付着方法
NL8901371A (nl) 1989-05-31 1990-12-17 Oce Nederland Bv Corona-inrichting.
JP3133842B2 (ja) * 1991-10-24 2001-02-13 川崎製鉄株式会社 多層配線構造の製造方法
JPH0722411A (ja) * 1993-06-22 1995-01-24 Kawasaki Steel Corp 埋込プラグの形成方法
JP2648098B2 (ja) * 1994-07-29 1997-08-27 日本電気株式会社 薄膜形成装置
US5534312A (en) * 1994-11-14 1996-07-09 Simon Fraser University Method for directly depositing metal containing patterned films
KR100277569B1 (ko) * 1994-12-27 2001-03-02 후지무라 마사지카, 아키모토 유미 전극패턴 형성용 조성물 및 전극패턴 형성방법
GB9500330D0 (en) * 1995-01-09 1995-03-01 Pilkington Plc Coatings on glass
JP2818557B2 (ja) * 1995-07-28 1998-10-30 日本電気株式会社 金属薄膜の形成方法および形成装置
JPH10125777A (ja) * 1996-10-17 1998-05-15 Nec Corp 半導体装置の製造方法
JP2967734B2 (ja) * 1996-10-18 1999-10-25 日本電気株式会社 薄膜の形成方法
JPH10335267A (ja) 1997-05-30 1998-12-18 Mitsubishi Electric Corp 半導体装置の製造方法
KR100548588B1 (ko) * 1998-09-15 2006-04-06 주식회사 하이닉스반도체 반도체소자의 배선 형성방법
EP1441864B1 (de) * 2000-01-21 2009-11-18 Midwest Research Institute Verfahren zur herstellung von dünnfilmleitern durch zersetzung von metallchelaten in verbindung mit metallteilchen
JP4250345B2 (ja) * 2000-02-08 2009-04-08 キヤノン株式会社 導電性膜形成用組成物、導電性膜の形成方法および画像形成装置の製造方法
JP3817201B2 (ja) * 2002-04-19 2006-09-06 Ｊｓｒ株式会社 導電性膜形成用組成物、導電性膜およびその形成法
JP3920802B2 (ja) 2003-03-28 2007-05-30 Ｊｓｒ株式会社 配線、電極およびそれらの形成方法

Also Published As

Publication number Publication date
US20060024937A1 (en) 2006-02-02
TWI244881B (en) 2005-12-01
US7071084B2 (en) 2006-07-04
EP1462544A3 (de) 2007-08-22
JP2004303783A (ja) 2004-10-28
JP3920802B2 (ja) 2007-05-30
EP1462544B1 (de) 2010-05-19
US7429778B2 (en) 2008-09-30
KR20040085017A (ko) 2004-10-07
KR100684215B1 (ko) 2007-02-20
EP2204472A3 (de) 2011-01-19
TW200501847A (en) 2005-01-01
US20040192038A1 (en) 2004-09-30
EP2204472A2 (de) 2010-07-07
CN1543293A (zh) 2004-11-03
EP1462544A2 (de) 2004-09-29

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Legal Events

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