DE602004024332D1 - Transistor-gate-elektrode mit leiter-materialschicht und herstellungsverfahren - Google Patents
Transistor-gate-elektrode mit leiter-materialschicht und herstellungsverfahrenInfo
- Publication number
- DE602004024332D1 DE602004024332D1 DE602004024332T DE602004024332T DE602004024332D1 DE 602004024332 D1 DE602004024332 D1 DE 602004024332D1 DE 602004024332 T DE602004024332 T DE 602004024332T DE 602004024332 T DE602004024332 T DE 602004024332T DE 602004024332 D1 DE602004024332 D1 DE 602004024332D1
- Authority
- DE
- Germany
- Prior art keywords
- gate electrode
- material layer
- manufacturing process
- transistor gate
- ladder material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004020 conductor Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 abstract 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/745,978 US7223679B2 (en) | 2003-12-24 | 2003-12-24 | Transistor gate electrode having conductor material layer |
PCT/US2004/043663 WO2005067055A1 (en) | 2003-12-24 | 2004-12-22 | Transistor gate electrode having conductor material layer |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004024332D1 true DE602004024332D1 (de) | 2010-01-07 |
Family
ID=34710648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004024332T Active DE602004024332D1 (de) | 2003-12-24 | 2004-12-22 | Transistor-gate-elektrode mit leiter-materialschicht und herstellungsverfahren |
Country Status (8)
Country | Link |
---|---|
US (5) | US7223679B2 (de) |
EP (2) | EP1697994B1 (de) |
KR (1) | KR100856437B1 (de) |
CN (1) | CN100521232C (de) |
AT (2) | ATE543217T1 (de) |
DE (1) | DE602004024332D1 (de) |
TW (1) | TWI250649B (de) |
WO (1) | WO2005067055A1 (de) |
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US7223679B2 (en) * | 2003-12-24 | 2007-05-29 | Intel Corporation | Transistor gate electrode having conductor material layer |
US7217611B2 (en) * | 2003-12-29 | 2007-05-15 | Intel Corporation | Methods for integrating replacement metal gate structures |
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US9859157B1 (en) | 2016-07-14 | 2018-01-02 | International Business Machines Corporation | Method for forming improved liner layer and semiconductor device including the same |
CN111933729B (zh) * | 2020-08-18 | 2022-03-01 | 中国电子科技集团公司第四十四研究所 | 低暗电流硅基锗探测器的制作方法 |
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KR100495543B1 (ko) * | 1996-09-17 | 2005-09-08 | 마츠시타 덴끼 산교 가부시키가이샤 | 반도체장치및그제조방법 |
US6399970B2 (en) | 1996-09-17 | 2002-06-04 | Matsushita Electric Industrial Co., Ltd. | FET having a Si/SiGeC heterojunction channel |
DE19720008A1 (de) | 1997-05-13 | 1998-11-19 | Siemens Ag | Integrierte CMOS-Schaltungsanordnung und Verfahren zu deren Herstellung |
JP3443343B2 (ja) * | 1997-12-03 | 2003-09-02 | 松下電器産業株式会社 | 半導体装置 |
US6225168B1 (en) * | 1998-06-04 | 2001-05-01 | Advanced Micro Devices, Inc. | Semiconductor device having metal gate electrode and titanium or tantalum nitride gate dielectric barrier layer and process of fabrication thereof |
JP3403076B2 (ja) * | 1998-06-30 | 2003-05-06 | 株式会社東芝 | 半導体装置及びその製造方法 |
US6326667B1 (en) * | 1999-09-09 | 2001-12-04 | Kabushiki Kaisha Toshiba | Semiconductor devices and methods for producing semiconductor devices |
US6593191B2 (en) * | 2000-05-26 | 2003-07-15 | Amberwave Systems Corporation | Buried channel strained silicon FET using a supply layer created through ion implantation |
JP2002190521A (ja) * | 2000-10-12 | 2002-07-05 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
US7138649B2 (en) | 2001-08-09 | 2006-11-21 | Amberwave Systems Corporation | Dual-channel CMOS transistors with differentially strained channels |
US6894353B2 (en) * | 2002-07-31 | 2005-05-17 | Freescale Semiconductor, Inc. | Capped dual metal gate transistors for CMOS process and method for making the same |
US6686637B1 (en) * | 2002-11-21 | 2004-02-03 | International Business Machines Corporation | Gate structure with independently tailored vertical doping profile |
US6933227B2 (en) * | 2003-10-23 | 2005-08-23 | Freescale Semiconductor, Inc. | Semiconductor device and method of forming the same |
US7223679B2 (en) * | 2003-12-24 | 2007-05-29 | Intel Corporation | Transistor gate electrode having conductor material layer |
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2003
- 2003-12-24 US US10/745,978 patent/US7223679B2/en not_active Expired - Lifetime
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2004
- 2004-12-21 TW TW093139836A patent/TWI250649B/zh active
- 2004-12-22 EP EP04815678A patent/EP1697994B1/de not_active Not-in-force
- 2004-12-22 AT AT09012031T patent/ATE543217T1/de active
- 2004-12-22 WO PCT/US2004/043663 patent/WO2005067055A1/en active Application Filing
- 2004-12-22 AT AT04815678T patent/ATE450054T1/de not_active IP Right Cessation
- 2004-12-22 DE DE602004024332T patent/DE602004024332D1/de active Active
- 2004-12-22 KR KR1020067012747A patent/KR100856437B1/ko active IP Right Grant
- 2004-12-22 EP EP09012031A patent/EP2136404B1/de not_active Not-in-force
- 2004-12-22 CN CNB2004800420958A patent/CN100521232C/zh active Active
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- 2009-09-02 US US12/553,033 patent/US7871916B2/en not_active Expired - Lifetime
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- 2010-09-29 US US12/893,983 patent/US7968957B2/en not_active Expired - Lifetime
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ATE450054T1 (de) | 2009-12-15 |
US7642610B2 (en) | 2010-01-05 |
US20050145944A1 (en) | 2005-07-07 |
CN1922735A (zh) | 2007-02-28 |
US20110018031A1 (en) | 2011-01-27 |
US7968957B2 (en) | 2011-06-28 |
EP1697994B1 (de) | 2009-11-25 |
US20070170464A1 (en) | 2007-07-26 |
US20110186912A1 (en) | 2011-08-04 |
EP2136404A1 (de) | 2009-12-23 |
CN100521232C (zh) | 2009-07-29 |
US7871916B2 (en) | 2011-01-18 |
ATE543217T1 (de) | 2012-02-15 |
US8237234B2 (en) | 2012-08-07 |
EP2136404B1 (de) | 2012-01-25 |
WO2005067055A1 (en) | 2005-07-21 |
EP1697994A1 (de) | 2006-09-06 |
TWI250649B (en) | 2006-03-01 |
US7223679B2 (en) | 2007-05-29 |
US20090315076A1 (en) | 2009-12-24 |
KR20060103462A (ko) | 2006-09-29 |
KR100856437B1 (ko) | 2008-09-04 |
TW200525747A (en) | 2005-08-01 |
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