DE602004024234D1 - Verfahren zur bildung rechteckförmiger abstandselemente für halbleiterbauelemente - Google Patents
Verfahren zur bildung rechteckförmiger abstandselemente für halbleiterbauelementeInfo
- Publication number
- DE602004024234D1 DE602004024234D1 DE602004024234T DE602004024234T DE602004024234D1 DE 602004024234 D1 DE602004024234 D1 DE 602004024234D1 DE 602004024234 T DE602004024234 T DE 602004024234T DE 602004024234 T DE602004024234 T DE 602004024234T DE 602004024234 D1 DE602004024234 D1 DE 602004024234D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor components
- spacer elements
- forming rectangular
- rectangular spacer
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
- H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P10/00—Bonding of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/747,680 US7022596B2 (en) | 2003-12-30 | 2003-12-30 | Method for forming rectangular-shaped spacers for semiconductor devices |
| PCT/US2004/035407 WO2005069362A1 (en) | 2003-12-30 | 2004-10-26 | A method for forming rectangular-shape spacers for semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE602004024234D1 true DE602004024234D1 (de) | 2009-12-31 |
Family
ID=34710826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE602004024234T Expired - Lifetime DE602004024234D1 (de) | 2003-12-30 | 2004-10-26 | Verfahren zur bildung rechteckförmiger abstandselemente für halbleiterbauelemente |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7022596B2 (https=) |
| EP (1) | EP1704588B1 (https=) |
| JP (1) | JP2007517398A (https=) |
| KR (1) | KR101129712B1 (https=) |
| CN (1) | CN1894783A (https=) |
| DE (1) | DE602004024234D1 (https=) |
| TW (1) | TWI366886B (https=) |
| WO (1) | WO2005069362A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050156229A1 (en) * | 2003-12-16 | 2005-07-21 | Yeap Geoffrey C. | Integrated circuit device and method therefor |
| DE102005020133B4 (de) * | 2005-04-29 | 2012-03-29 | Advanced Micro Devices, Inc. | Verfahren zur Herstellung eines Transistorelements mit Technik zur Herstellung einer Kontaktisolationsschicht mit verbesserter Spannungsübertragungseffizienz |
| US9111746B2 (en) * | 2012-03-22 | 2015-08-18 | Tokyo Electron Limited | Method for reducing damage to low-k gate spacer during etching |
| KR101986538B1 (ko) | 2012-09-21 | 2019-06-07 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| US9378975B2 (en) | 2014-02-10 | 2016-06-28 | Tokyo Electron Limited | Etching method to form spacers having multiple film layers |
| KR102394938B1 (ko) * | 2015-05-21 | 2022-05-09 | 삼성전자주식회사 | 반도체 소자 및 반도체 소자의 제조 방법 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59138379A (ja) * | 1983-01-27 | 1984-08-08 | Toshiba Corp | 半導体装置の製造方法 |
| JPH02265250A (ja) * | 1989-04-05 | 1990-10-30 | Nec Corp | 半導体装置の製造方法 |
| JP3360480B2 (ja) * | 1995-04-06 | 2002-12-24 | ソニー株式会社 | 半導体装置の製造方法 |
| TW332316B (en) * | 1997-07-22 | 1998-05-21 | Holtek Microelectronics Inc | Manufacturing method of MOS transistor with adjustable source/drain extension area |
| JPH1187703A (ja) * | 1997-09-10 | 1999-03-30 | Toshiba Corp | 半導体装置の製造方法 |
| JPH11204784A (ja) * | 1998-01-09 | 1999-07-30 | Toshiba Corp | 半導体装置の製造方法 |
| US6323519B1 (en) * | 1998-10-23 | 2001-11-27 | Advanced Micro Devices, Inc. | Ultrathin, nitrogen-containing MOSFET sidewall spacers using low-temperature semiconductor fabrication process |
| US6190961B1 (en) * | 1999-09-22 | 2001-02-20 | International Business Machines Corporation | Fabricating a square spacer |
| JP4771607B2 (ja) * | 2001-03-30 | 2011-09-14 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
| US6440875B1 (en) * | 2001-05-02 | 2002-08-27 | Taiwan Semiconductor Manufacturing Co., Ltd | Masking layer method for forming a spacer layer with enhanced linewidth control |
| KR100395878B1 (ko) * | 2001-08-31 | 2003-08-25 | 삼성전자주식회사 | 스페이서 형성 방법 |
| JP2004014875A (ja) * | 2002-06-07 | 2004-01-15 | Fujitsu Ltd | 半導体装置及びその製造方法 |
-
2003
- 2003-12-30 US US10/747,680 patent/US7022596B2/en not_active Expired - Lifetime
-
2004
- 2004-10-26 WO PCT/US2004/035407 patent/WO2005069362A1/en not_active Ceased
- 2004-10-26 DE DE602004024234T patent/DE602004024234D1/de not_active Expired - Lifetime
- 2004-10-26 EP EP04796395A patent/EP1704588B1/en not_active Expired - Lifetime
- 2004-10-26 CN CNA2004800375007A patent/CN1894783A/zh active Pending
- 2004-10-26 KR KR1020067013138A patent/KR101129712B1/ko not_active Expired - Fee Related
- 2004-10-26 JP JP2006546981A patent/JP2007517398A/ja active Pending
- 2004-12-21 TW TW093139766A patent/TWI366886B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007517398A (ja) | 2007-06-28 |
| TWI366886B (en) | 2012-06-21 |
| WO2005069362A1 (en) | 2005-07-28 |
| KR101129712B1 (ko) | 2012-03-28 |
| US7022596B2 (en) | 2006-04-04 |
| US20050146059A1 (en) | 2005-07-07 |
| CN1894783A (zh) | 2007-01-10 |
| TW200525693A (en) | 2005-08-01 |
| EP1704588A1 (en) | 2006-09-27 |
| EP1704588B1 (en) | 2009-11-18 |
| KR20060112676A (ko) | 2006-11-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |