TWI366886B - A method for forming rectangular-shaped spacers for semiconductor devices - Google Patents

A method for forming rectangular-shaped spacers for semiconductor devices

Info

Publication number
TWI366886B
TWI366886B TW093139766A TW93139766A TWI366886B TW I366886 B TWI366886 B TW I366886B TW 093139766 A TW093139766 A TW 093139766A TW 93139766 A TW93139766 A TW 93139766A TW I366886 B TWI366886 B TW I366886B
Authority
TW
Taiwan
Prior art keywords
semiconductor devices
shaped spacers
forming rectangular
rectangular
forming
Prior art date
Application number
TW093139766A
Other languages
English (en)
Other versions
TW200525693A (en
Inventor
Huicai Zhong
Srikanteswara Dakshina-Murthy
Original Assignee
Globalfoundries Us Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Globalfoundries Us Inc filed Critical Globalfoundries Us Inc
Publication of TW200525693A publication Critical patent/TW200525693A/zh
Application granted granted Critical
Publication of TWI366886B publication Critical patent/TWI366886B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW093139766A 2003-12-30 2004-12-21 A method for forming rectangular-shaped spacers for semiconductor devices TWI366886B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/747,680 US7022596B2 (en) 2003-12-30 2003-12-30 Method for forming rectangular-shaped spacers for semiconductor devices

Publications (2)

Publication Number Publication Date
TW200525693A TW200525693A (en) 2005-08-01
TWI366886B true TWI366886B (en) 2012-06-21

Family

ID=34710826

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093139766A TWI366886B (en) 2003-12-30 2004-12-21 A method for forming rectangular-shaped spacers for semiconductor devices

Country Status (8)

Country Link
US (1) US7022596B2 (zh)
EP (1) EP1704588B1 (zh)
JP (1) JP2007517398A (zh)
KR (1) KR101129712B1 (zh)
CN (1) CN1894783A (zh)
DE (1) DE602004024234D1 (zh)
TW (1) TWI366886B (zh)
WO (1) WO2005069362A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050156229A1 (en) * 2003-12-16 2005-07-21 Yeap Geoffrey C. Integrated circuit device and method therefor
DE102005020133B4 (de) * 2005-04-29 2012-03-29 Advanced Micro Devices, Inc. Verfahren zur Herstellung eines Transistorelements mit Technik zur Herstellung einer Kontaktisolationsschicht mit verbesserter Spannungsübertragungseffizienz
US9111746B2 (en) * 2012-03-22 2015-08-18 Tokyo Electron Limited Method for reducing damage to low-k gate spacer during etching
KR101986538B1 (ko) 2012-09-21 2019-06-07 삼성전자주식회사 반도체 장치 및 그 제조 방법
US9378975B2 (en) 2014-02-10 2016-06-28 Tokyo Electron Limited Etching method to form spacers having multiple film layers
KR102394938B1 (ko) * 2015-05-21 2022-05-09 삼성전자주식회사 반도체 소자 및 반도체 소자의 제조 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59138379A (ja) * 1983-01-27 1984-08-08 Toshiba Corp 半導体装置の製造方法
JPH02265250A (ja) * 1989-04-05 1990-10-30 Nec Corp 半導体装置の製造方法
JP3360480B2 (ja) * 1995-04-06 2002-12-24 ソニー株式会社 半導体装置の製造方法
TW332316B (en) * 1997-07-22 1998-05-21 Holtek Microelectronics Inc Manufacturing method of MOS transistor with adjustable source/drain extension area
JPH1187703A (ja) * 1997-09-10 1999-03-30 Toshiba Corp 半導体装置の製造方法
JPH11204784A (ja) * 1998-01-09 1999-07-30 Toshiba Corp 半導体装置の製造方法
US6323519B1 (en) * 1998-10-23 2001-11-27 Advanced Micro Devices, Inc. Ultrathin, nitrogen-containing MOSFET sidewall spacers using low-temperature semiconductor fabrication process
US6190961B1 (en) * 1999-09-22 2001-02-20 International Business Machines Corporation Fabricating a square spacer
JP4771607B2 (ja) * 2001-03-30 2011-09-14 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US6440875B1 (en) * 2001-05-02 2002-08-27 Taiwan Semiconductor Manufacturing Co., Ltd Masking layer method for forming a spacer layer with enhanced linewidth control
KR100395878B1 (ko) * 2001-08-31 2003-08-25 삼성전자주식회사 스페이서 형성 방법
JP2004014875A (ja) * 2002-06-07 2004-01-15 Fujitsu Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
WO2005069362A1 (en) 2005-07-28
US20050146059A1 (en) 2005-07-07
US7022596B2 (en) 2006-04-04
KR101129712B1 (ko) 2012-03-28
CN1894783A (zh) 2007-01-10
EP1704588A1 (en) 2006-09-27
EP1704588B1 (en) 2009-11-18
JP2007517398A (ja) 2007-06-28
KR20060112676A (ko) 2006-11-01
DE602004024234D1 (de) 2009-12-31
TW200525693A (en) 2005-08-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees