DE602004023663D1 - Projektionsbelichtungsmaske, Projektionsbelichtungsvorrichtung und Projektionsbelichtungsmethode - Google Patents

Projektionsbelichtungsmaske, Projektionsbelichtungsvorrichtung und Projektionsbelichtungsmethode

Info

Publication number
DE602004023663D1
DE602004023663D1 DE602004023663T DE602004023663T DE602004023663D1 DE 602004023663 D1 DE602004023663 D1 DE 602004023663D1 DE 602004023663 T DE602004023663 T DE 602004023663T DE 602004023663 T DE602004023663 T DE 602004023663T DE 602004023663 D1 DE602004023663 D1 DE 602004023663D1
Authority
DE
Germany
Prior art keywords
projection exposure
mask
exposure apparatus
projection
exposure method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004023663T
Other languages
English (en)
Inventor
Kazuo Iizuka
Junji Isohata
Nobuyoshi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE602004023663D1 publication Critical patent/DE602004023663D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
DE602004023663T 2003-01-31 2004-01-29 Projektionsbelichtungsmaske, Projektionsbelichtungsvorrichtung und Projektionsbelichtungsmethode Expired - Lifetime DE602004023663D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003025174A JP4280509B2 (ja) 2003-01-31 2003-01-31 投影露光用マスク、投影露光用マスクの製造方法、投影露光装置および投影露光方法

Publications (1)

Publication Number Publication Date
DE602004023663D1 true DE602004023663D1 (de) 2009-12-03

Family

ID=32652943

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004023663T Expired - Lifetime DE602004023663D1 (de) 2003-01-31 2004-01-29 Projektionsbelichtungsmaske, Projektionsbelichtungsvorrichtung und Projektionsbelichtungsmethode

Country Status (7)

Country Link
US (2) US7030962B2 (de)
EP (1) EP1443361B1 (de)
JP (1) JP4280509B2 (de)
KR (1) KR100609943B1 (de)
CN (1) CN100343759C (de)
DE (1) DE602004023663D1 (de)
TW (1) TWI242694B (de)

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Publication number Priority date Publication date Assignee Title
US6821348B2 (en) * 2002-02-14 2004-11-23 3M Innovative Properties Company In-line deposition processes for circuit fabrication
US6897164B2 (en) * 2002-02-14 2005-05-24 3M Innovative Properties Company Aperture masks for circuit fabrication
US20030151118A1 (en) * 2002-02-14 2003-08-14 3M Innovative Properties Company Aperture masks for circuit fabrication
JP2006072100A (ja) * 2004-09-03 2006-03-16 Adtec Engineeng Co Ltd 投影露光装置
DE112007001591T5 (de) * 2006-06-30 2009-05-07 Kodak Graphic Communications Canada Company, Burnaby Formen eines Bildes mit einer Vielzahl von Abbildungsköpfen
US8431328B2 (en) * 2007-02-22 2013-04-30 Nikon Corporation Exposure method, method for manufacturing flat panel display substrate, and exposure apparatus
US20080299499A1 (en) * 2007-05-30 2008-12-04 Naomasa Shiraishi Exposure method, method of manufacturing plate for flat panel display, and exposure apparatus
US8451427B2 (en) 2007-09-14 2013-05-28 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
EP2179330A1 (de) * 2007-10-16 2010-04-28 Nikon Corporation Optisches beleuchtungssystem, belichtungsvorrichtung und bauelementeherstellungsverfahren
KR101546987B1 (ko) * 2007-10-16 2015-08-24 가부시키가이샤 니콘 조명 광학 시스템, 노광 장치 및 디바이스 제조 방법
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
WO2009145048A1 (ja) 2008-05-28 2009-12-03 株式会社ニコン 空間光変調器の検査装置および検査方法、照明光学系、照明光学系の調整方法、露光装置、およびデバイス製造方法
EP2347305B1 (de) * 2008-11-03 2016-05-04 Olivier Parriaux Verfahren und installation zur abbildung grosser gitter
CA3001742C (en) * 2015-10-13 2023-02-28 Microtau Ip Pty Ltd Microstructure patterns
US10890849B2 (en) * 2016-05-19 2021-01-12 Nikon Corporation EUV lithography system for dense line patterning

Family Cites Families (17)

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Publication number Priority date Publication date Assignee Title
US4286871A (en) * 1980-08-11 1981-09-01 Keuffel & Esser Company Photogrammetric measuring system
JPS60158623A (ja) * 1984-01-27 1985-08-20 Hitachi Ltd フオトリソグラフイｐｑｃ法
US4878086A (en) 1985-04-01 1989-10-31 Canon Kabushiki Kaisha Flat panel display device and manufacturing of the same
JPH0622192B2 (ja) 1985-04-25 1994-03-23 キヤノン株式会社 表示パネル製造方法
US4708466A (en) 1986-02-07 1987-11-24 Canon Kabushiki Kaisha Exposure apparatus
JP2862385B2 (ja) 1991-03-13 1999-03-03 キヤノン株式会社 露光装置
JPH0729908A (ja) * 1993-07-15 1995-01-31 Nec Corp 銅微細配線の形成方法
JPH0866781A (ja) 1994-08-30 1996-03-12 Mitsubishi Electric Corp エキシマレーザビーム照射装置
JP3784136B2 (ja) * 1997-06-02 2006-06-07 株式会社ルネサステクノロジ 投影露光装置および投影露光方法
JPH11219900A (ja) 1997-11-14 1999-08-10 Nikon Corp 露光装置及び露光方法
AU1053199A (en) 1997-11-14 1999-06-07 Nikon Corporation Exposure apparatus and method of manufacturing the same, and exposure method
JP3352405B2 (ja) 1998-09-10 2002-12-03 キヤノン株式会社 露光方法及びそれを用いたデバイス製造方法並びに半導体デバイス
TW447009B (en) 1999-02-12 2001-07-21 Nippon Kogaku Kk Scanning exposure method and scanning type exposure device
JP3454743B2 (ja) 1999-03-02 2003-10-06 シャープ株式会社 フォトマスク、ｔｆｔ基板の製造方法および表示装置の製造方法。
JP4438122B2 (ja) * 1999-04-14 2010-03-24 株式会社ニコン 照明光学系、周辺露光装置、露光方法及びデバイス製造方法
JP2001337441A (ja) 2000-03-24 2001-12-07 Toshiba Corp ホトマスク、ホトマスクブランク及び前記ホトマスクを用いた半導体ウェハの露光方法
KR100531410B1 (ko) * 2003-04-15 2005-11-28 엘지.필립스 엘시디 주식회사 반사투과형 액정표시장치의 어레이 기판 및 그의 제조 방법

Also Published As

Publication number Publication date
CN1519652A (zh) 2004-08-11
JP4280509B2 (ja) 2009-06-17
EP1443361B1 (de) 2009-10-21
EP1443361A2 (de) 2004-08-04
US20060119819A1 (en) 2006-06-08
CN100343759C (zh) 2007-10-17
US20040150804A1 (en) 2004-08-05
TWI242694B (en) 2005-11-01
TW200424797A (en) 2004-11-16
KR100609943B1 (ko) 2006-08-08
US7030962B2 (en) 2006-04-18
KR20040070037A (ko) 2004-08-06
JP2004233897A (ja) 2004-08-19
EP1443361A3 (de) 2005-11-16
US7193684B2 (en) 2007-03-20

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