DE602004020012D1 - Verfahren zur Herstellung eines lithographischen Apparats - Google Patents

Verfahren zur Herstellung eines lithographischen Apparats

Info

Publication number
DE602004020012D1
DE602004020012D1 DE602004020012T DE602004020012T DE602004020012D1 DE 602004020012 D1 DE602004020012 D1 DE 602004020012D1 DE 602004020012 T DE602004020012 T DE 602004020012T DE 602004020012 T DE602004020012 T DE 602004020012T DE 602004020012 D1 DE602004020012 D1 DE 602004020012D1
Authority
DE
Germany
Prior art keywords
preparation
lithographic apparatus
lithographic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE602004020012T
Other languages
English (en)
Inventor
Johannes Adrianus Antonius Dams
Mark Kroon
Harm-Jan Voorma
Carolus Ida Maria Antonius Spee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of DE602004020012D1 publication Critical patent/DE602004020012D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
DE602004020012T 2003-05-09 2004-05-07 Verfahren zur Herstellung eines lithographischen Apparats Expired - Fee Related DE602004020012D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03252894A EP1475668A1 (de) 2003-05-09 2003-05-09 Verfahren zur Herstellung von Komponenten für einen lithographischen Apparat

Publications (1)

Publication Number Publication Date
DE602004020012D1 true DE602004020012D1 (de) 2009-04-30

Family

ID=32981964

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004020012T Expired - Fee Related DE602004020012D1 (de) 2003-05-09 2004-05-07 Verfahren zur Herstellung eines lithographischen Apparats

Country Status (8)

Country Link
US (1) US8077287B2 (de)
EP (2) EP1475668A1 (de)
JP (1) JP4178131B2 (de)
KR (1) KR100749950B1 (de)
CN (1) CN100495211C (de)
DE (1) DE602004020012D1 (de)
SG (1) SG116541A1 (de)
TW (1) TW200502712A (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6977713B2 (en) * 2003-12-08 2005-12-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
FR2903823B1 (fr) * 2006-07-12 2008-09-05 Messier Dowty Sa Element actif de machine electromagnetique, procede de fabrication d'un tel element actif, et machine electromagnetique comportant un tel element actif.
KR101437583B1 (ko) * 2007-07-03 2014-09-12 삼성전자주식회사 리소그라피 장치 및 리소그라피 방법
NL1036543A1 (nl) * 2008-02-20 2009-08-24 Asml Netherlands Bv Lithographic apparatus comprising a magnet, method for the protection of a magnet in a lithographic apparatus and device manufacturing method.
CN101625522B (zh) * 2008-07-09 2012-03-21 中国科学院微电子研究所 在厚负性高分辨率电子束抗蚀剂hsq上制作密集图形的方法
DE102009005340A1 (de) * 2009-01-16 2010-07-22 Carl Zeiss Smt Ag EUV-Lithographieanlage und Kabel dafür
DE102009008209A1 (de) * 2009-02-10 2010-08-19 Carl Zeiss Smt Ag Aktuator mit mindestens einem Magneten für eine Projektionsbelichtungsanlage sowie Projektionsbelichtungsanlage mit einem Magneten und Herstellungsverfahren hierfür
TWI422985B (zh) * 2009-03-12 2014-01-11 Raydium Semiconductor Corp 奈米微影系統以及奈米微影方法
CN102681335B (zh) * 2011-03-15 2013-08-07 中国科学院微电子研究所 一种基于湿法腐蚀制备位相型衍射光学元件的方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4040874A (en) * 1975-08-04 1977-08-09 General Electric Company Semiconductor element having a polymeric protective coating and glass coating overlay
JPH04239130A (ja) * 1991-01-11 1992-08-27 Kawasaki Steel Corp プラズマ処理装置及びプラズマ処理方法
JPH0639959A (ja) 1992-02-03 1994-02-15 Showa Denko Kk セメント質硬化体の表面化粧方法
JP3167044B2 (ja) * 1992-02-13 2001-05-14 日本トムソン株式会社 直流リニアモータ及びこれを具備した直動ユニット
JP3174417B2 (ja) * 1992-12-11 2001-06-11 ダウ・コ−ニング・コ−ポレ−ション 酸化ケイ素膜の形成方法
JPH06267486A (ja) 1993-03-17 1994-09-22 Toshiba Corp 荷電ビーム装置
US5439849A (en) * 1994-02-02 1995-08-08 At&T Corp. Encapsulation techniques which include forming a thin glass layer onto a polymer layer
US5456952A (en) * 1994-05-17 1995-10-10 Lsi Logic Corporation Process of curing hydrogen silsesquioxane coating to form silicon oxide layer
US5609925A (en) * 1995-12-04 1997-03-11 Dow Corning Corporation Curing hydrogen silsesquioxane resin with an electron beam
US6586104B2 (en) * 1996-06-24 2003-07-01 Catalysts & Chemicals Industries Co., Ltd. Coating liquid for forming a transparent coating and substrate with a transparent coating
KR100238252B1 (ko) * 1996-09-13 2000-01-15 윤종용 Sog층 큐어링방법 및 이를 이용한 반도체장치의 절연막제조방법
US6096267A (en) * 1997-02-28 2000-08-01 Extraction Systems, Inc. System for detecting base contaminants in air
KR100469142B1 (ko) * 1997-12-10 2005-06-21 주식회사 하이닉스반도체 반도체소자의금속오염방지방법
US5942801A (en) * 1997-12-18 1999-08-24 Advanced Micro Devices, Inc. Borderless vias with HSQ gap filled metal patterns having high etching resistance
US6372666B1 (en) * 1998-08-31 2002-04-16 Alliedsignal Inc. Process for producing dielectric thin films
US6031598A (en) * 1998-09-25 2000-02-29 Euv Llc Extreme ultraviolet lithography machine
US6114781A (en) * 1999-02-26 2000-09-05 Nikon Corporation Cooling system for a linear or planar motor
JP2001153140A (ja) * 1999-11-26 2001-06-08 Fujitsu Ltd 気体軸受
US6271606B1 (en) * 1999-12-23 2001-08-07 Nikon Corporation Driving motors attached to a stage that are magnetically coupled through a chamber
JP4474020B2 (ja) * 2000-06-23 2010-06-02 キヤノン株式会社 移動装置及び露光装置
US6479830B1 (en) * 2000-11-01 2002-11-12 Trw Inc. Low-sputter-yield coating for hardware near laser-produced plasma
JP4689058B2 (ja) * 2001-02-16 2011-05-25 キヤノン株式会社 リニアモータ、ステージ装置および露光装置ならびにデバイス製造方法
DE10109031A1 (de) * 2001-02-24 2002-09-05 Zeiss Carl Optisches Strahlführungssystem und Verfahren zur Kontaminationsverhinderung optischer Komponenten hiervon
JP4110504B2 (ja) * 2001-03-13 2008-07-02 株式会社安川電機 真空用モータ
US6773950B2 (en) * 2001-05-25 2004-08-10 Cornell Research Foundation, Inc. Method of forming dual exposure glass layer structures
KR20030017753A (ko) * 2001-08-22 2003-03-04 삼성전자주식회사 이중층 내벽 구조의 챔버
JP3809381B2 (ja) * 2002-01-28 2006-08-16 キヤノン株式会社 リニアモータ、ステージ装置、露光装置及びデバイス製造方法
US7282821B2 (en) * 2002-01-28 2007-10-16 Canon Kabushiki Kaisha Linear motor, stage apparatus, exposure apparatus, and device manufacturing apparatus
US7579681B2 (en) * 2002-06-11 2009-08-25 Micron Technology, Inc. Super high density module with integrated wafer level packages
US7183674B2 (en) * 2003-11-06 2007-02-27 Carl Zeiss Smt Ag Hermetically sealed elements of an actuator
US7184123B2 (en) * 2004-03-24 2007-02-27 Asml Netherlands B.V. Lithographic optical system

Also Published As

Publication number Publication date
KR20040096772A (ko) 2004-11-17
JP2004343129A (ja) 2004-12-02
SG116541A1 (en) 2005-11-28
CN1573570A (zh) 2005-02-02
JP4178131B2 (ja) 2008-11-12
EP1475671A1 (de) 2004-11-10
EP1475668A1 (de) 2004-11-10
EP1475671B1 (de) 2009-03-18
TW200502712A (en) 2005-01-16
KR100749950B1 (ko) 2007-08-16
CN100495211C (zh) 2009-06-03
US20050008978A1 (en) 2005-01-13
US8077287B2 (en) 2011-12-13

Similar Documents

Publication Publication Date Title
DE60328461D1 (de) Verfahren zur herstellung eines chinazolin-4-onderivats
DE50208649D1 (de) Verfahren zur bereitschaftshaltung eines kombikraftwerkes
DE50303605D1 (de) Verfahren zur herstellung eines pressgehärteten bauteils
DE60212183D1 (de) Verfahren zur herstellung eines verbundes
DE60131649D1 (de) Verfahren zur herstellung eines kristalls
DE602005013038D1 (de) Lithographischer Apparat, Verfahren zur Herstellung einer Vorrichtung
ATE410764T1 (de) Verfahren zur authentifizierung eines produkts
DE602004012033D1 (de) Verfahren zur Herstellung eines Druckbehälters
DE602005009117D1 (de) Verfahren zur Herstellung eines gemusterten Formkörpers
DE60142320D1 (de) Verfahren zur Herstellung eines Dünnfilms
DE60039268D1 (de) Verfahren zur Herstellung eines TFT
DE502004009768D1 (de) Verfahren zur herstellung von dreiwertigen organophosphor-verbindungen
DE60138987D1 (de) Verfahren zur Eichung eines lithographischen Projektionsapparats
DE602004029247D1 (de) Verfahren zur herstellung eines olefinoxids
DE60324671D1 (de) Verfahren zur herstellung eines sulfinyl-acetamids
DE602004006048D1 (de) Verfahren zur Herstellung eines Gassacks
DE60315692D1 (de) Verfahren zur herstellung eines lithographischen druckplattenvorläufers
DE112005003155T8 (de) Verfahren zur Herstellung eines Wegwerftrageartikels
DE60316826D1 (de) Verfahren zur herstellung eines lithographischen druckplattenvorläufers
DE50302301D1 (de) Verfahren zur herstellung eines formteiles
DE602004020699D1 (de) Verfahren zur Herstellung eines Lackfilms
ATE554489T1 (de) Verfahren zur herstellung eines transformators
DE60236171D1 (de) Verfahren for zur herstellung eines 14-hydroxynormorphinon-derivats
DE60212643D1 (de) Verfahren zur herstellung eines reifenkomponentenglieds
DE50304619D1 (de) Verfahren zur herstellung eines bauteils

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee