DE602004015270D1 - Verfahren zum herstellen einer halbleiter-vorrichtung mit selbstausrichtenden metallischen kontakten - Google Patents

Verfahren zum herstellen einer halbleiter-vorrichtung mit selbstausrichtenden metallischen kontakten

Info

Publication number
DE602004015270D1
DE602004015270D1 DE602004015270T DE602004015270T DE602004015270D1 DE 602004015270 D1 DE602004015270 D1 DE 602004015270D1 DE 602004015270 T DE602004015270 T DE 602004015270T DE 602004015270 T DE602004015270 T DE 602004015270T DE 602004015270 D1 DE602004015270 D1 DE 602004015270D1
Authority
DE
Germany
Prior art keywords
semiconductor device
doped region
self
producing
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004015270T
Other languages
English (en)
Inventor
Pierre-Jean Ribeyron
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE602004015270D1 publication Critical patent/DE602004015270D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
DE602004015270T 2003-04-29 2004-04-27 Verfahren zum herstellen einer halbleiter-vorrichtung mit selbstausrichtenden metallischen kontakten Expired - Lifetime DE602004015270D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0350136A FR2854497B1 (fr) 2003-04-29 2003-04-29 Procede de realisation d'un dispositif semi-conducteur a metallisations auto-alignees
PCT/FR2004/050173 WO2004097945A1 (fr) 2003-04-29 2004-04-27 Procede de realisation d'un dispositif semi-conducteur a metallisations auto-alignees.

Publications (1)

Publication Number Publication Date
DE602004015270D1 true DE602004015270D1 (de) 2008-09-04

Family

ID=33155679

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004015270T Expired - Lifetime DE602004015270D1 (de) 2003-04-29 2004-04-27 Verfahren zum herstellen einer halbleiter-vorrichtung mit selbstausrichtenden metallischen kontakten

Country Status (9)

Country Link
US (1) US7364938B2 (de)
EP (1) EP1618611B1 (de)
JP (1) JP5196785B2 (de)
CN (1) CN100452442C (de)
AT (1) ATE402486T1 (de)
DE (1) DE602004015270D1 (de)
ES (1) ES2311158T3 (de)
FR (1) FR2854497B1 (de)
WO (1) WO2004097945A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2880989B1 (fr) 2005-01-20 2007-03-09 Commissariat Energie Atomique Dispositif semi-conducteur a heterojonctions et a structure inter-digitee
FR2880986B1 (fr) * 2005-01-20 2007-03-02 Commissariat Energie Atomique Procede de metallisation d'un dispositif semi-conducteur
DE102008013446A1 (de) * 2008-02-15 2009-08-27 Ersol Solar Energy Ag Verfahren zur Herstellung monokristalliner n-Silizium-Solarzellen sowie Solarzelle, hergestellt nach einem derartigen Verfahren
US8481357B2 (en) * 2008-03-08 2013-07-09 Crystal Solar Incorporated Thin film solar cell with ceramic handling layer
JP2009253096A (ja) * 2008-04-08 2009-10-29 Sharp Corp 太陽電池セルの製造方法および太陽電池モジュールの製造方法ならびに太陽電池モジュール
CN101958361A (zh) * 2009-07-13 2011-01-26 无锡尚德太阳能电力有限公司 透光薄膜太阳电池组件刻蚀方法
KR101948206B1 (ko) * 2012-03-02 2019-02-14 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 태양 전지와, 이의 제조 방법
TWI643351B (zh) * 2013-01-31 2018-12-01 澳洲商新南創新有限公司 太陽能電池金屬化及互連方法
WO2014179368A1 (en) * 2013-04-29 2014-11-06 Solexel, Inc. Damage free laser patterning of transparent layers for forming doped regions on a solar cell substrate

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4234352A (en) * 1978-07-26 1980-11-18 Electric Power Research Institute, Inc. Thermophotovoltaic converter and cell for use therein
US4927770A (en) * 1988-11-14 1990-05-22 Electric Power Research Inst. Corp. Of District Of Columbia Method of fabricating back surface point contact solar cells
JP3032422B2 (ja) * 1994-04-28 2000-04-17 シャープ株式会社 太陽電池セルとその製造方法
US6180869B1 (en) * 1997-05-06 2001-01-30 Ebara Solar, Inc. Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices
JP4329183B2 (ja) * 1999-10-14 2009-09-09 ソニー株式会社 単一セル型薄膜単結晶シリコン太陽電池の製造方法、バックコンタクト型薄膜単結晶シリコン太陽電池の製造方法および集積型薄膜単結晶シリコン太陽電池の製造方法
US6396046B1 (en) * 1999-11-02 2002-05-28 General Electric Company Imager with reduced FET photoresponse and high integrity contact via
US6423568B1 (en) * 1999-12-30 2002-07-23 Sunpower Corporation Method of fabricating a silicon solar cell

Also Published As

Publication number Publication date
JP5196785B2 (ja) 2013-05-15
CN100452442C (zh) 2009-01-14
WO2004097945A1 (fr) 2004-11-11
EP1618611A1 (de) 2006-01-25
ES2311158T3 (es) 2009-02-01
CN1781194A (zh) 2006-05-31
EP1618611B1 (de) 2008-07-23
FR2854497A1 (fr) 2004-11-05
ATE402486T1 (de) 2008-08-15
JP2006525658A (ja) 2006-11-09
US20060275936A1 (en) 2006-12-07
FR2854497B1 (fr) 2005-09-02
US7364938B2 (en) 2008-04-29

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Legal Events

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