TWI256080B - A power MOSFET structure and method thereof - Google Patents

A power MOSFET structure and method thereof

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Publication number
TWI256080B
TWI256080B TW92126551A TW92126551A TWI256080B TW I256080 B TWI256080 B TW I256080B TW 92126551 A TW92126551 A TW 92126551A TW 92126551 A TW92126551 A TW 92126551A TW I256080 B TWI256080 B TW I256080B
Authority
TW
Taiwan
Prior art keywords
formed over
layer
power mosfet
dielectric layer
epi
Prior art date
Application number
TW92126551A
Other languages
Chinese (zh)
Other versions
TW200512813A (en
Inventor
Yen-Yuan Huang
Original Assignee
Advanced Power Electronics Cor
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Power Electronics Cor filed Critical Advanced Power Electronics Cor
Priority to TW92126551A priority Critical patent/TWI256080B/en
Publication of TW200512813A publication Critical patent/TW200512813A/en
Application granted granted Critical
Publication of TWI256080B publication Critical patent/TWI256080B/en

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Abstract

The present invention provides a power MOSFET structure and method thereof. According to the manufacturing method, an epi-layer is formed over a semiconductor substrate. A gate region is formed over the epi-layer. Next, a body region is formed in the epi layer and source regions are formed in the body region. A first dielectric layer is formed over the gate region, source region and body region. Then, an etching process is performed to form contacts. Next, a first metal layer is formed over the dielectric layer. A second dielectric layer is formed over the first metal layer. Finally, a second metal layer is formed over the second dielectric layer.
TW92126551A 2003-09-25 2003-09-25 A power MOSFET structure and method thereof TWI256080B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW92126551A TWI256080B (en) 2003-09-25 2003-09-25 A power MOSFET structure and method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW92126551A TWI256080B (en) 2003-09-25 2003-09-25 A power MOSFET structure and method thereof

Publications (2)

Publication Number Publication Date
TW200512813A TW200512813A (en) 2005-04-01
TWI256080B true TWI256080B (en) 2006-06-01

Family

ID=37614068

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92126551A TWI256080B (en) 2003-09-25 2003-09-25 A power MOSFET structure and method thereof

Country Status (1)

Country Link
TW (1) TWI256080B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7768059B2 (en) 2006-06-26 2010-08-03 Ememory Technology Inc. Nonvolatile single-poly memory device

Also Published As

Publication number Publication date
TW200512813A (en) 2005-04-01

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees