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Application filed by Advanced Power Electronics CorfiledCriticalAdvanced Power Electronics Cor
Priority to TW92126551ApriorityCriticalpatent/TWI256080B/en
Publication of TW200512813ApublicationCriticalpatent/TW200512813A/en
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Publication of TWI256080BpublicationCriticalpatent/TWI256080B/en
The present invention provides a power MOSFET structure and method thereof. According to the manufacturing method, an epi-layer is formed over a semiconductor substrate. A gate region is formed over the epi-layer. Next, a body region is formed in the epi layer and source regions are formed in the body region. A first dielectric layer is formed over the gate region, source region and body region. Then, an etching process is performed to form contacts. Next, a first metal layer is formed over the dielectric layer. A second dielectric layer is formed over the first metal layer. Finally, a second metal layer is formed over the second dielectric layer.
TW92126551A2003-09-252003-09-25A power MOSFET structure and method thereof
TWI256080B
(en)