DE602004006904D1 - Neue Wismut-Verbindungen, Verfahren zu ihrer Herstellung und Verfahren zur Herstellung eines Films - Google Patents

Neue Wismut-Verbindungen, Verfahren zu ihrer Herstellung und Verfahren zur Herstellung eines Films

Info

Publication number
DE602004006904D1
DE602004006904D1 DE602004006904T DE602004006904T DE602004006904D1 DE 602004006904 D1 DE602004006904 D1 DE 602004006904D1 DE 602004006904 T DE602004006904 T DE 602004006904T DE 602004006904 T DE602004006904 T DE 602004006904T DE 602004006904 D1 DE602004006904 D1 DE 602004006904D1
Authority
DE
Germany
Prior art keywords
producing
preparation
film
bismuth compounds
new bismuth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004006904T
Other languages
English (en)
Other versions
DE602004006904T2 (de
Inventor
Taishi Furukawa
Noriaki Oshima
Kenichi Sekimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tosoh Corp
Original Assignee
Tosoh Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tosoh Corp filed Critical Tosoh Corp
Publication of DE602004006904D1 publication Critical patent/DE602004006904D1/de
Application granted granted Critical
Publication of DE602004006904T2 publication Critical patent/DE602004006904T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/94—Bismuth compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J5/00—Manipulators mounted on wheels or on carriages
    • B25J5/02—Manipulators mounted on wheels or on carriages travelling along a guideway
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q5/00—Driving or feeding mechanisms; Control arrangements therefor
    • B23Q5/22—Feeding members carrying tools or work
    • B23Q5/34—Feeding other members supporting tools or work, e.g. saddles, tool-slides, through mechanical transmission
    • B23Q5/36—Feeding other members supporting tools or work, e.g. saddles, tool-slides, through mechanical transmission in which a servomotor forms an essential element
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J9/00—Programme-controlled manipulators
    • B25J9/0096—Programme-controlled manipulators co-operating with a working support, e.g. work-table
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J9/00—Programme-controlled manipulators
    • B25J9/16—Programme controls
    • B25J9/1674—Programme controls characterised by safety, monitoring, diagnostic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Robotics (AREA)
  • Inorganic Chemistry (AREA)
  • Catalysts (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Chemical Vapour Deposition (AREA)
DE602004006904T 2003-04-08 2004-04-05 Neue Wismut-Verbindungen, Verfahren zu ihrer Herstellung und Verfahren zur Herstellung eines Films Expired - Lifetime DE602004006904T2 (de)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP2003104323 2003-04-08
JP2003104323 2003-04-08
JP2003125462 2003-04-30
JP2003125462 2003-04-30
JP2003199848 2003-07-22
JP2003199848 2003-07-22
JP2003208663 2003-08-25
JP2003208663 2003-08-25
JP2003208662 2003-08-25
JP2003208662 2003-08-25

Publications (2)

Publication Number Publication Date
DE602004006904D1 true DE602004006904D1 (de) 2007-07-26
DE602004006904T2 DE602004006904T2 (de) 2008-02-14

Family

ID=32873030

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004006904T Expired - Lifetime DE602004006904T2 (de) 2003-04-08 2004-04-05 Neue Wismut-Verbindungen, Verfahren zu ihrer Herstellung und Verfahren zur Herstellung eines Films

Country Status (6)

Country Link
US (1) US6916944B2 (de)
EP (1) EP1466918B1 (de)
KR (1) KR100721365B1 (de)
CN (1) CN100417656C (de)
DE (1) DE602004006904T2 (de)
TW (1) TWI272275B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100279011A1 (en) * 2007-10-31 2010-11-04 Advanced Technology Materials, Inc. Novel bismuth precursors for cvd/ald of thin films
US8330136B2 (en) 2008-12-05 2012-12-11 Advanced Technology Materials, Inc. High concentration nitrogen-containing germanium telluride based memory devices and processes of making
US9012876B2 (en) 2010-03-26 2015-04-21 Entegris, Inc. Germanium antimony telluride materials and devices incorporating same
WO2011146913A2 (en) 2010-05-21 2011-11-24 Advanced Technology Materials, Inc. Germanium antimony telluride materials and devices incorporating same
US9640757B2 (en) 2012-10-30 2017-05-02 Entegris, Inc. Double self-aligned phase change memory device structure
WO2014124056A1 (en) 2013-02-08 2014-08-14 Advanced Technology Materials, Inc. Ald processes for low leakage current and low equivalent oxide thickness bitao films
US20220411449A1 (en) * 2019-11-13 2022-12-29 University Of Hawaii Method for Preparing Heteroleptic Triarylbismuthanes and Compounds Produced by the Same
CN112430084B (zh) * 2020-12-03 2022-07-08 西南大学 一种高耐电场强度、高储能密度的nbt-bt基驰豫铁电陶瓷薄膜材料及其制备方法
WO2023122470A1 (en) 2021-12-21 2023-06-29 Versum Materials Us, Llc Precursors for deposition of bismuth-containing films
WO2023122471A1 (en) 2021-12-21 2023-06-29 Versum Materials Us, Llc Homoleptic bismuth precursors for depositing bismuth oxide containing thin films

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2982929B2 (ja) * 1992-03-28 1999-11-29 同和鉱業株式会社 有機金属錯体を用いる薄膜の製造方法
DE69620582T2 (de) * 1995-01-26 2002-11-07 Nycomed Imaging As Verwendung von WISMUTVERBINDUNGEN zur Herstellung eines Arzneimittels zur Behandlung von Magenverstimmungen, die durch Helicobacter pylori verursacht werden
JPH08330304A (ja) 1995-03-30 1996-12-13 Sony Corp 酸化物膜成膜方法、半導体装置の製造方法、並びに超伝導体薄膜の成膜方法
JPH08339716A (ja) 1995-04-10 1996-12-24 Kojundo Chem Lab Co Ltd ビスマス層状強誘電体薄膜の製造方法
JP4225607B2 (ja) 1998-08-06 2009-02-18 株式会社Ａｄｅｋａ ビスマス含有複合金属酸化膜の製造方法
JP4086219B2 (ja) 2000-02-10 2008-05-14 株式会社高純度化学研究所 高純度ビスマストリス（β−ジケトネート）及びその製造方法
US6472547B1 (en) 2001-03-05 2002-10-29 Kabushikikaisha Kojundokagaku Kenyusho Process for producing bismuth tertiary amyloxide

Also Published As

Publication number Publication date
EP1466918B1 (de) 2007-06-13
CN1539841A (zh) 2004-10-27
KR100721365B1 (ko) 2007-05-23
US20040204483A1 (en) 2004-10-14
EP1466918A1 (de) 2004-10-13
KR20040087881A (ko) 2004-10-15
TW200504086A (en) 2005-02-01
CN100417656C (zh) 2008-09-10
DE602004006904T2 (de) 2008-02-14
US6916944B2 (en) 2005-07-12
TWI272275B (en) 2007-02-01

Similar Documents

Publication Publication Date Title
DE60235738D1 (de) Rutheniumkomplex, Verfahren zu dessen Herstellung und Verfahren zur Herstellung einer Dünnschicht
DE60142320D1 (de) Verfahren zur Herstellung eines Dünnfilms
DE60322967D1 (de) Verfahren und Vorrichtung zur Bildung eines Filmes, zur Herstellung eines Farbfilters und zur Herstellung einer Anzeigevorrichtung
DE60212183D1 (de) Verfahren zur herstellung eines verbundes
DE60023415D1 (de) Verfahren zur Herstellung eines Polarisationsbeugungsfilms
ATE533019T1 (de) Verfahren zur herstellung eines pulverförmigen produkts
DE60328461D1 (de) Verfahren zur herstellung eines chinazolin-4-onderivats
ATA10622000A (de) Verfahren zur herstellung eines haarstreifens
DE602004020699D1 (de) Verfahren zur Herstellung eines Lackfilms
DE60223667D1 (de) Verfahren zur herstellung eines biochips
ATE414058T1 (de) Verfahren zur herstellung eines sulfinyl- acetamids
DE602006021014D1 (de) Struktur enthaltender funktionaler film und verfahren zur herstellung eines funktionalen films
DE602004015202D1 (de) T-Verbindung durch Rührschweissen und Verfahren zu ihrer Herstellung
DE602004006904D1 (de) Neue Wismut-Verbindungen, Verfahren zu ihrer Herstellung und Verfahren zur Herstellung eines Films
ATE248770T1 (de) Verfahren zur herstellung eines titanhaltigen zeolithen
DE60231100D1 (de) Vorrichtung zur Herstellung eines Metallfilmes
DE60317715D1 (de) Verfahren zur herstellung eines sektionaltorpaneels
DE60322763D1 (de) Verfahren zur Herstellung eines Pulvers mit hohem Gerbstoffgehalt
DE50213488D1 (de) Verfahren zur herstellung eines folienschlauches
DE602004032282D1 (de) Verfahren zur Herstellung eines Bildaufzeichnungselements, das eine extrudiertes Polyester enthaltende Bildempfangsschicht umfasst
DE69905719D1 (de) Verfahren zur herstellung eines mikroporösen films
DE502004007368D1 (de) Verfahren zur herstellung eines hülsenförmigen gehäuses aus mehreren flachen blechen
DE50301183D1 (de) Verfahren zur Herstellung eines Spinnvlieses aus Filamenten
DE60320448D1 (de) Verfahren zur herstellung eines siliciumreichen kornorientierten elektrostahlblechs mit überlegener ummagnetisierungsverlusteigenschaft
DE602006021417D1 (de) Struktur enthaltender funktionaler film und verfahren zur herstellung eines funktionalen films

Legal Events

Date Code Title Description
8364 No opposition during term of opposition