DE602006021417D1 - Struktur enthaltender funktionaler film und verfahren zur herstellung eines funktionalen films - Google Patents

Struktur enthaltender funktionaler film und verfahren zur herstellung eines funktionalen films

Info

Publication number
DE602006021417D1
DE602006021417D1 DE200660021417 DE602006021417T DE602006021417D1 DE 602006021417 D1 DE602006021417 D1 DE 602006021417D1 DE 200660021417 DE200660021417 DE 200660021417 DE 602006021417 T DE602006021417 T DE 602006021417T DE 602006021417 D1 DE602006021417 D1 DE 602006021417D1
Authority
DE
Germany
Prior art keywords
functional film
producing
structure containing
containing functional
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE200660021417
Other languages
English (en)
Inventor
Yukio Sakashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of DE602006021417D1 publication Critical patent/DE602006021417D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/081—Shaping or machining of piezoelectric or electrostrictive bodies by coating or depositing using masks, e.g. lift-off
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/14—Layer or component removable to expose adhesive
    • Y10T428/1486—Ornamental, decorative, pattern, or indicia
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Laminated Bodies (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Memories (AREA)
DE200660021417 2005-06-07 2006-06-05 Struktur enthaltender funktionaler film und verfahren zur herstellung eines funktionalen films Active DE602006021417D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005166396 2005-06-07
PCT/JP2006/311667 WO2006132380A2 (en) 2005-06-07 2006-06-05 Functional film containing structure and method of manufacturing functional film

Publications (1)

Publication Number Publication Date
DE602006021417D1 true DE602006021417D1 (de) 2011-06-01

Family

ID=37144894

Family Applications (1)

Application Number Title Priority Date Filing Date
DE200660021417 Active DE602006021417D1 (de) 2005-06-07 2006-06-05 Struktur enthaltender funktionaler film und verfahren zur herstellung eines funktionalen films

Country Status (4)

Country Link
US (1) US8012594B2 (de)
EP (1) EP1889307B1 (de)
DE (1) DE602006021417D1 (de)
WO (1) WO2006132380A2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1889306B1 (de) * 2005-06-07 2011-03-23 FUJIFILM Corporation Struktur zur formung eines musters für eine funktionelle folie und verfahren zur herstellung der funktionellen folie
JP4821871B2 (ja) * 2009-03-19 2011-11-24 ソニー株式会社 電子デバイスの製造方法および表示装置の製造方法
FR2950878B1 (fr) * 2009-10-01 2011-10-21 Saint Gobain Procede de depot de couche mince
DE102014000651B3 (de) 2014-01-17 2015-05-13 Gottfried Wilhelm Leibniz Universität Hannover Vorrichtung zum Bestimmen einer Konzentration eines chemischen Stoffes
FR3083004B1 (fr) * 2018-06-22 2021-01-15 Commissariat Energie Atomique Dispositif transducteur piezoelectrique et procede de realisation d'un tel dispositif

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3053651A (en) 1958-01-21 1962-09-11 Chemetals Corp Treatment of sulfide minerals
US4259401A (en) * 1976-08-10 1981-03-31 The Southwall Corporation Methods, apparatus, and compositions for storing heat for the heating and cooling of buildings
JPS5494905A (en) 1978-01-10 1979-07-27 Teijin Ltd Laminated material for thin layer transfer
US4988674A (en) * 1989-02-09 1991-01-29 Eastman Kodak Company Electrically conductive articles and processes for their fabrication
US5527766A (en) 1993-12-13 1996-06-18 Superconductor Technologies, Inc. Method for epitaxial lift-off for oxide films utilizing superconductor release layers
JP3809681B2 (ja) 1996-08-27 2006-08-16 セイコーエプソン株式会社 剥離方法
TW413848B (en) 1998-01-10 2000-12-01 Tokyo Electron Ltd Semiconductor device with insulation film made of fluorine added-carbon film and method of manufacturing the same
US6071795A (en) * 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
JP2002134806A (ja) 2000-10-19 2002-05-10 Canon Inc 圧電膜型アクチュエータおよび液体噴射ヘッドとその製造方法
US6589857B2 (en) * 2001-03-23 2003-07-08 Matsushita Electric Industrial Co., Ltd. Manufacturing method of semiconductor film
JP2002305334A (ja) 2001-04-09 2002-10-18 Canon Inc 機能性薄膜の転写方法
FR2830983B1 (fr) * 2001-10-11 2004-05-14 Commissariat Energie Atomique Procede de fabrication de couches minces contenant des microcomposants
JP2004207325A (ja) * 2002-12-24 2004-07-22 Oki Data Corp 半導体装置
JP4949668B2 (ja) * 2004-12-09 2012-06-13 富士フイルム株式会社 セラミックス膜の製造方法及びセラミックス膜を含む構造物
DE602006021014D1 (de) * 2005-06-07 2011-05-12 Fujifilm Corp Struktur enthaltender funktionaler film und verfahren zur herstellung eines funktionalen films
EP1889306B1 (de) * 2005-06-07 2011-03-23 FUJIFILM Corporation Struktur zur formung eines musters für eine funktionelle folie und verfahren zur herstellung der funktionellen folie
EP1888808A2 (de) * 2005-06-07 2008-02-20 Fujifilm Corporation Funktionelle folie mit struktur und verfahren zur herstellung der funktionellen folie

Also Published As

Publication number Publication date
WO2006132380A3 (en) 2007-06-21
WO2006132380A2 (en) 2006-12-14
EP1889307B1 (de) 2011-04-20
EP1889307A2 (de) 2008-02-20
US8012594B2 (en) 2011-09-06
US20090104784A1 (en) 2009-04-23

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