DE602004001097D1 - Siloxanhaltige Harze und isolierender Film daraus für Halbleiter-Zwischenschicht - Google Patents

Siloxanhaltige Harze und isolierender Film daraus für Halbleiter-Zwischenschicht

Info

Publication number
DE602004001097D1
DE602004001097D1 DE200460001097 DE602004001097T DE602004001097D1 DE 602004001097 D1 DE602004001097 D1 DE 602004001097D1 DE 200460001097 DE200460001097 DE 200460001097 DE 602004001097 T DE602004001097 T DE 602004001097T DE 602004001097 D1 DE602004001097 D1 DE 602004001097D1
Authority
DE
Germany
Prior art keywords
siloxane
insulating film
containing resins
semiconductor interlayer
interlayer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE200460001097
Other languages
English (en)
Other versions
DE602004001097T2 (de
Inventor
Yi Yeol Lyu
Joon Sung Ryu
Ki Yong Song
Jong Baek Seon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE602004001097D1 publication Critical patent/DE602004001097D1/de
Application granted granted Critical
Publication of DE602004001097T2 publication Critical patent/DE602004001097T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913—Rod, strand, filament or fiber
    • Y10T428/2933—Coated or with bond, impregnation or core
    • Y10T428/2962—Silane, silicone or siloxane in coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated
    • Y10T428/2993—Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]
    • Y10T428/2995—Silane, siloxane or silicone coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Silicon Polymers (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE200460001097 2003-07-01 2004-06-23 Siloxanhaltige Harze und isolierender Film daraus für Halbleiter-Zwischenschicht Expired - Lifetime DE602004001097T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2003-0044119A KR100507967B1 (ko) 2003-07-01 2003-07-01 실록산계 수지 및 이를 이용한 반도체 층간 절연막
KR2003044119 2003-07-01

Publications (2)

Publication Number Publication Date
DE602004001097D1 true DE602004001097D1 (de) 2006-07-20
DE602004001097T2 DE602004001097T2 (de) 2007-01-18

Family

ID=36643386

Family Applications (1)

Application Number Title Priority Date Filing Date
DE200460001097 Expired - Lifetime DE602004001097T2 (de) 2003-07-01 2004-06-23 Siloxanhaltige Harze und isolierender Film daraus für Halbleiter-Zwischenschicht

Country Status (6)

Country Link
US (2) US7071540B2 (de)
EP (1) EP1493773B1 (de)
JP (1) JP4155947B2 (de)
KR (1) KR100507967B1 (de)
CN (1) CN100393777C (de)
DE (1) DE602004001097T2 (de)

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DE10162443A1 (de) * 2001-12-19 2003-07-03 Bayer Ag Verfahren zur Herstellung von dielektrischen Schichten unter Verwendung multifunktioneller Carbosilane
KR100506695B1 (ko) * 2003-06-02 2005-08-08 삼성전자주식회사 실록산계 수지 및 이를 이용한 반도체 층간 절연막
KR20050024721A (ko) * 2003-09-01 2005-03-11 삼성전자주식회사 신규 실록산계 수지 및 이를 이용한 반도체 층간 절연막
JP4282493B2 (ja) * 2004-01-15 2009-06-24 株式会社東芝 膜形成方法及び基板処理装置
US8901268B2 (en) * 2004-08-03 2014-12-02 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof
US7947799B2 (en) * 2004-09-22 2011-05-24 Kai Manfred Martin Landskron High organic group content-periodic mesoporous organosilicas (HO-PMO's)
KR100775100B1 (ko) 2005-03-16 2007-11-08 주식회사 엘지화학 절연막 형성용 조성물, 이로부터 제조되는 절연막, 및 이를포함하는 전기 또는 전자 소자
KR100685734B1 (ko) 2005-06-07 2007-02-26 삼성전자주식회사 다공성 스핀 온 글래스 조성물, 이의 제조 방법 및 이를이용한 다공성 실리콘 산화막 제조 방법
KR100955570B1 (ko) * 2006-09-18 2010-04-30 주식회사 엘지화학 저온 경화형 보호막 형성용 조성물, 이로부터 제조되는보호막, 및 이를 포함하는 기재
KR100989964B1 (ko) * 2007-12-28 2010-10-26 주식회사 삼양사 폴리실세스퀴옥산계 유무기 혼성 그라프트 공중합체 및그의 제조에 이용되는 기공 형성제를 포함하는 유기실란화합물과 그를 포함하는 절연막의 제조방법
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
KR101734911B1 (ko) 2010-08-10 2017-05-15 삼성디스플레이 주식회사 유기 발광 디스플레이 장치 및 그 제조 방법
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
KR101825546B1 (ko) * 2014-05-26 2018-02-05 제일모직 주식회사 실리카계 막 형성용 조성물, 및 실리카계 막의 제조방법
WO2016167892A1 (en) 2015-04-13 2016-10-20 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
US11015082B2 (en) * 2017-12-19 2021-05-25 Honeywell International Inc. Crack-resistant polysiloxane dielectric planarizing compositions, methods and films
KR20210021420A (ko) 2019-08-16 2021-02-26 삼성전자주식회사 저유전체 물질 층을 포함하는 반도체 소자 형성 방법

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US3615272A (en) 1968-11-04 1971-10-26 Dow Corning Condensed soluble hydrogensilsesquioxane resin
DE3173441D1 (en) 1980-08-26 1986-02-20 Japan Synthetic Rubber Co Ltd Ladder-like lower alkylpolysilsesquioxanes and process for their preparation
US4756977A (en) 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
US4795783A (en) * 1987-06-19 1989-01-03 Ppg Industries, Inc. Organopolysiloxane containing coating compositions
US4999397A (en) 1989-07-28 1991-03-12 Dow Corning Corporation Metastable silane hydrolyzates and process for their preparation
US5010159A (en) 1989-09-01 1991-04-23 Dow Corning Corporation Process for the synthesis of soluble, condensed hydridosilicon resins containing low levels of silanol
US5378790A (en) * 1992-09-16 1995-01-03 E. I. Du Pont De Nemours & Co. Single component inorganic/organic network materials and precursors thereof
JPH0717981A (ja) * 1993-06-30 1995-01-20 Shin Etsu Chem Co Ltd 有機ケイ素化合物及びその製造方法
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US5677410A (en) * 1995-05-16 1997-10-14 Bayer Ag Carbosilane-dendrimers, carbosilane-hybrid materials, methods for manufacturing them and a method for manufacturing coatings from the carbosilane-dendrimers
US5798430A (en) * 1995-06-28 1998-08-25 E. I. Du Pont De Nemours And Compnay Molecular and oligomeric silane precursors to network materials
WO1997010282A1 (en) 1995-09-12 1997-03-20 Gelest, Inc. Beta-substituted organosilsesquioxanes and use thereof
DE19650147A1 (de) * 1996-12-04 1998-06-10 Bayer Ag Leitfähige, organisch-anorganische Hybridmaterialien
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ATE226226T1 (de) * 1997-05-23 2002-11-15 Bayer Ag Organosilan-oligomere
ATE280806T1 (de) 1997-07-15 2004-11-15 Asahi Chemical Ind Zusammensetzungen aus alkoxysilan und organischem polymer zur herstellung von dünnen isolierenden schichten und deren verwendung
US6344520B1 (en) * 1999-06-24 2002-02-05 Wacker Silicones Corporation Addition-crosslinkable epoxy-functional organopolysiloxane polymer and coating compositions
US6232424B1 (en) 1999-12-13 2001-05-15 Dow Corning Corporation Soluble silicone resin compositions having good solution stability
JP3571004B2 (ja) * 2000-04-28 2004-09-29 エルジー ケム インベストメント エルティーディー． 半導体素子用超低誘電多孔性配線層間絶縁膜およびその製造方法ならびにそれを用いた半導体素子
KR100343938B1 (en) * 2000-11-29 2002-07-20 Samsung Electronics Co Ltd Preparation method of interlayer insulation membrane of semiconductor
DE60135540D1 (de) * 2001-03-27 2008-10-09 Samsung Electronics Co Ltd noporen
DE60204502T2 (de) * 2001-03-27 2006-05-18 Samsung Electronics Co., Ltd., Suwon Polysiloxanharz und Verfahren zur Herstellung einer Zwischenschicht daraus für Wafer
KR100532915B1 (ko) * 2002-10-29 2005-12-02 삼성전자주식회사 단당류계 또는 올리고당류계 포로젠을 포함하는 다공성층간 절연막을 형성하기 위한 조성물
KR100506695B1 (ko) * 2003-06-02 2005-08-08 삼성전자주식회사 실록산계 수지 및 이를 이용한 반도체 층간 절연막

Also Published As

Publication number Publication date
KR20050005004A (ko) 2005-01-13
KR100507967B1 (ko) 2005-08-10
EP1493773A1 (de) 2005-01-05
CN100393777C (zh) 2008-06-11
DE602004001097T2 (de) 2007-01-18
US7071540B2 (en) 2006-07-04
US20050003681A1 (en) 2005-01-06
US20060264595A1 (en) 2006-11-23
US7294584B2 (en) 2007-11-13
EP1493773B1 (de) 2006-06-07
JP4155947B2 (ja) 2008-09-24
JP2005023318A (ja) 2005-01-27
CN1576297A (zh) 2005-02-09

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