DE60140011D1 - Bildsensor mit einem kapazitiven transimpedanzverstärker mit niedrigem fpn und hoher verstärkung - Google Patents

Bildsensor mit einem kapazitiven transimpedanzverstärker mit niedrigem fpn und hoher verstärkung

Info

Publication number
DE60140011D1
DE60140011D1 DE60140011T DE60140011T DE60140011D1 DE 60140011 D1 DE60140011 D1 DE 60140011D1 DE 60140011 T DE60140011 T DE 60140011T DE 60140011 T DE60140011 T DE 60140011T DE 60140011 D1 DE60140011 D1 DE 60140011D1
Authority
DE
Germany
Prior art keywords
transimpedanz
capacitive
amplifier
image sensor
high gain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60140011T
Other languages
English (en)
Inventor
Boyd Fowler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Real GmbH
Original Assignee
Real GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Real GmbH filed Critical Real GmbH
Application granted granted Critical
Publication of DE60140011D1 publication Critical patent/DE60140011D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H04N25/677—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction for reducing the column or line fixed pattern noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE60140011T 2000-12-04 2001-11-21 Bildsensor mit einem kapazitiven transimpedanzverstärker mit niedrigem fpn und hoher verstärkung Expired - Fee Related DE60140011D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/729,751 US6459078B1 (en) 2000-12-04 2000-12-04 Image sensor utilizing a low FPN high gain capacitive transimpedance amplifier
PCT/US2001/043384 WO2002046779A1 (en) 2000-12-04 2001-11-21 Image sensor utilizing a low fpn high gain capacitive transimpedance amplifier

Publications (1)

Publication Number Publication Date
DE60140011D1 true DE60140011D1 (de) 2009-11-05

Family

ID=24932454

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60140011T Expired - Fee Related DE60140011D1 (de) 2000-12-04 2001-11-21 Bildsensor mit einem kapazitiven transimpedanzverstärker mit niedrigem fpn und hoher verstärkung

Country Status (4)

Country Link
US (1) US6459078B1 (de)
EP (1) EP1399746B1 (de)
DE (1) DE60140011D1 (de)
WO (1) WO2002046779A1 (de)

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JP3181874B2 (ja) * 1998-02-02 2001-07-03 セイコーインスツルメンツ株式会社 イメージセンサー
JP3942793B2 (ja) * 2000-03-30 2007-07-11 シャープ株式会社 電荷量検出回路
GB2370172B (en) * 2000-12-13 2002-12-04 Infrared Integrated Syst Ltd Dynamic offset correction in detector arrays
JP3734717B2 (ja) * 2001-04-26 2006-01-11 富士通株式会社 イメージセンサ
WO2003021939A1 (en) * 2001-09-05 2003-03-13 Canesta Inc. Electromagnetic wave detection arrangement with improved performance and reproducibility
FR2839841A1 (fr) * 2002-05-17 2003-11-21 St Microelectronics Sa Pixel actif cmos a bruit reduit
US7005637B2 (en) * 2003-01-31 2006-02-28 Intevac, Inc. Backside thinning of image array devices
US6969839B2 (en) * 2003-01-31 2005-11-29 Intevac, Inc. Backthinned CMOS sensor with low fixed pattern noise
US7042060B2 (en) * 2003-01-31 2006-05-09 Intevac, Inc. Backside thinning of image array devices
JP4159935B2 (ja) * 2003-03-25 2008-10-01 三菱電機株式会社 オフセット補償回路と、それを用いたオフセット補償機能付駆動回路および液晶表示装置
US7161419B2 (en) * 2003-11-12 2007-01-09 Seiko Npc Corporation Sensor device and a signal amplification device of a small detection signal provided by the sensor
US7414653B2 (en) * 2003-12-19 2008-08-19 Micron Technology, Inc. Dark reduction via feedback control of photodiode bias
US7132638B2 (en) * 2004-06-10 2006-11-07 Fairchild Imaging CCD imaging array with improved charge sensing circuit
US7268338B2 (en) * 2005-07-06 2007-09-11 Fairchild Imaging Imaging array having variable conversion gain
JP2010511185A (ja) * 2006-11-28 2010-04-08 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ アクティブ・マトリックス・アレイ装置
EP2026479A1 (de) 2007-08-17 2009-02-18 Leica Geosystems AG Transimpedanzverstärkerschaltung für einen Photodetektor
US7696916B2 (en) * 2007-09-13 2010-04-13 Sony Corporation Parallel type analog-to-digital conversion circuit, sampling circuit and comparison amplification circuit
US7944290B2 (en) * 2009-01-26 2011-05-17 Sumitomo Electric Industries, Ltd. Trans-impedance amplifier
JP5804780B2 (ja) * 2011-06-03 2015-11-04 キヤノン株式会社 固体撮像装置
US9167182B2 (en) 2011-09-26 2015-10-20 Semiconductor Components Industries, Llc Charge sensing in image sensors with output channel having multiple-gain output paths
JP2014230212A (ja) * 2013-05-24 2014-12-08 キヤノン株式会社 光電変換装置及び撮像システム
US9374545B2 (en) * 2013-09-13 2016-06-21 BAE Systems Imaging Solutions Inc. Amplifier adapted for CMOS imaging sensors
US9654714B2 (en) * 2013-11-01 2017-05-16 Silicon Optronics, Inc. Shared pixel with fixed conversion gain
US9253396B2 (en) * 2013-12-04 2016-02-02 BAE Systems Imaging Solutions Inc. Variable gain column amplifier adapted for use in imaging arrays
US20160014366A1 (en) * 2014-07-08 2016-01-14 Raytheon Company Extended dynamic range charge transimpedance amplifier input cell for light sensor
FR3059494A1 (fr) * 2016-11-29 2018-06-01 Universite D'aix-Marseille Circuit amplificateur de charges a gain de conversion eleve
WO2018118016A1 (en) * 2016-12-19 2018-06-28 BAE Systems Imaging Solutions Inc. Global shutter scheme that reduces the effects of dark current
CN110763336B (zh) * 2018-07-26 2021-03-09 京东方科技集团股份有限公司 光检测电路及电子设备、驱动方法
KR20200118687A (ko) 2019-04-08 2020-10-16 삼성전자주식회사 이미지 센서 장치 및 그것의 동작 방법
FR3101768A1 (fr) 2019-10-10 2021-04-16 Teledyne E2V Semiconductors Sas Capteur d’image radiologique intra-oral a pixels actifs et procede de prise d’image associe
US11431931B2 (en) * 2021-01-14 2022-08-30 Sony Semiconductor Solutions Corporation CTIA pixel with shared reset network

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4393351A (en) * 1981-07-27 1983-07-12 American Microsystems, Inc. Offset compensation for switched capacitor integrators
JPS61117966A (ja) * 1984-11-13 1986-06-05 Ricoh Co Ltd 画像読取装置
US5164620A (en) * 1991-11-26 1992-11-17 Kalaf Thomas R Autonomous gain normalization circuit
US5602511A (en) * 1995-06-07 1997-02-11 Santa Barbara Research Center Capacitive transimpedance amplifier having dynamic compression
EP0928103A3 (de) * 1997-12-31 2000-08-02 Texas Instruments Incorporated CMOS-Bildaufnahmesensoren
US6587142B1 (en) * 1998-09-09 2003-07-01 Pictos Technologies, Inc. Low-noise active-pixel sensor for imaging arrays with high speed row reset
TW427053B (en) * 1999-03-10 2001-03-21 Nat Science Council Low voltage switched capacitor integrator having offset voltage compensation and the filter using the same
US6339363B1 (en) * 2000-12-04 2002-01-15 Pixel Devices International Low FPN high gain capacitive transimpedance amplifier for use with capacitive sensors

Also Published As

Publication number Publication date
EP1399746B1 (de) 2009-09-23
WO2002046779A1 (en) 2002-06-13
EP1399746A4 (de) 2007-05-30
US20020066848A1 (en) 2002-06-06
US6459078B1 (en) 2002-10-01
EP1399746A1 (de) 2004-03-24

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee