DE60136937D1 - Vorrichtung und verfahren zum entfernen von, in einem ionenstrahl mitgeführten teilchen - Google Patents

Vorrichtung und verfahren zum entfernen von, in einem ionenstrahl mitgeführten teilchen

Info

Publication number
DE60136937D1
DE60136937D1 DE60136937T DE60136937T DE60136937D1 DE 60136937 D1 DE60136937 D1 DE 60136937D1 DE 60136937 T DE60136937 T DE 60136937T DE 60136937 T DE60136937 T DE 60136937T DE 60136937 D1 DE60136937 D1 DE 60136937D1
Authority
DE
Germany
Prior art keywords
jungle
removing particles
particles carried
carried
particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60136937T
Other languages
English (en)
Inventor
Eric Ryan Harrington
Victor Maurice Benveniste
Michael Anthony Graf
Robert Day Rathmell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Application granted granted Critical
Publication of DE60136937D1 publication Critical patent/DE60136937D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/40—Traps for removing or diverting unwanted particles, e.g. negative ions, fringing electrons; Arrangements for velocity or mass selection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31705—Impurity or contaminant control
DE60136937T 2000-09-01 2001-08-21 Vorrichtung und verfahren zum entfernen von, in einem ionenstrahl mitgeführten teilchen Expired - Lifetime DE60136937D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/654,381 US6525326B1 (en) 2000-09-01 2000-09-01 System and method for removing particles entrained in an ion beam
PCT/GB2001/003760 WO2002019378A2 (en) 2000-09-01 2001-08-21 System and method for removing particles entrained in an ion beam

Publications (1)

Publication Number Publication Date
DE60136937D1 true DE60136937D1 (de) 2009-01-22

Family

ID=24624630

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60136937T Expired - Lifetime DE60136937D1 (de) 2000-09-01 2001-08-21 Vorrichtung und verfahren zum entfernen von, in einem ionenstrahl mitgeführten teilchen

Country Status (9)

Country Link
US (1) US6525326B1 (de)
EP (1) EP1314182B1 (de)
JP (1) JP5168528B2 (de)
KR (1) KR100855134B1 (de)
CN (1) CN100468604C (de)
AU (1) AU2001282300A1 (de)
DE (1) DE60136937D1 (de)
TW (1) TWI246105B (de)
WO (1) WO2002019378A2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10153723A1 (de) * 2001-10-31 2003-05-15 Thales Electron Devices Gmbh Plasmabeschleuniger-Anordnung
JP3738734B2 (ja) * 2002-02-06 2006-01-25 日新電機株式会社 静電加速管およびそれを備えるイオン注入装置
JP2008541396A (ja) * 2005-05-16 2008-11-20 アクセリス テクノロジーズ インコーポレーテッド イオンビーム通路中の局在静電界を用いたイオンビーム保持のためのシステム及び方法
KR100671158B1 (ko) * 2005-08-11 2007-01-17 동부일렉트로닉스 주식회사 파티클 제거 장치 및 이를 포함하는 이온 주입 장치
US7511287B2 (en) * 2005-09-21 2009-03-31 Axcelis Technologies, Inc. Systems and methods that mitigate contamination and modify surface characteristics during ion implantation processes through the introduction of gases
CN101432841B (zh) * 2006-04-26 2013-06-26 艾克塞利斯科技公司 用于捕获离子束粒子和聚焦离子束的方法和系统
JP4660452B2 (ja) * 2006-09-30 2011-03-30 株式会社フェローテック 拡径管型プラズマ生成装置
US20080157007A1 (en) * 2006-12-27 2008-07-03 Varian Semiconductor Equipment Associates, Inc. Active particle trapping for process control
EP2129193A1 (de) * 2008-05-30 2009-12-02 Ion Beam Applications S.A. Abstreifelement, Abstreifanordnung und Verfahren zur Extraktion eines Partikelstrahls aus einem Zyklotron
US8242469B2 (en) * 2009-07-15 2012-08-14 Axcelis Technologies, Inc. Adjustable louvered plasma electron flood enclosure
US8669517B2 (en) * 2011-05-24 2014-03-11 Axcelis Technologies, Inc. Mass analysis variable exit aperture
US8963107B2 (en) * 2012-01-12 2015-02-24 Axcelis Technologies, Inc. Beam line design to reduce energy contamination
KR20150130557A (ko) * 2013-03-15 2015-11-23 글렌 레인 패밀리 리미티드 리에빌러티 리미티드 파트너쉽 조정 가능한 질량 분해 애퍼쳐
EP3000789B1 (de) * 2014-09-15 2020-11-04 Idropan Dell'orto Depuratori S.r.l. Vorrichtung und verfahren zur reinigung einer flüssigkeit
JP6347414B2 (ja) 2014-11-04 2018-06-27 日新イオン機器株式会社 質量分析電磁石
US9721750B2 (en) * 2015-07-28 2017-08-01 Varian Semiconductor Equipment Associates, Inc. Controlling contamination particle trajectory from a beam-line electrostatic element
CN111261482B (zh) * 2018-11-30 2023-02-28 夏泰鑫半导体(青岛)有限公司 离子布植装置及离子布植时捕集污染物粒子的方法

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Publication number Priority date Publication date Assignee Title
US4683922A (en) 1986-01-24 1987-08-04 Allied Corporation Particle deflector and method of distributing dissimilar particles
US4800396A (en) * 1987-07-08 1989-01-24 Hertz Carl H Compensation method and device for ink droplet deviation of an ink jet
JPH01265439A (ja) * 1988-04-18 1989-10-23 Fuji Electric Co Ltd イオンビーム装置
JP2765890B2 (ja) * 1988-12-09 1998-06-18 株式会社日立製作所 プラズマイオン源微量元素質量分析装置
JP2543761B2 (ja) * 1989-03-23 1996-10-16 セイコー電子工業株式会社 誘導結合プラズマ質量分析装置
JP2716518B2 (ja) * 1989-04-21 1998-02-18 東京エレクトロン株式会社 イオン注入装置及びイオン注入方法
GB9005204D0 (en) * 1990-03-08 1990-05-02 Superion Ltd Apparatus and methods relating to scanning ion beams
US5134299A (en) 1991-03-13 1992-07-28 Eaton Corporation Ion beam implantation method and apparatus for particulate control
JPH05234564A (ja) * 1992-02-19 1993-09-10 Nissin Electric Co Ltd イオン注入装置
JP3054302B2 (ja) 1992-12-02 2000-06-19 アプライド マテリアルズ インコーポレイテッド イオン注入中の半導体ウェハにおける帯電を低減するプラズマ放出システム
JPH0654763U (ja) * 1993-01-06 1994-07-26 日新電機株式会社 イオン注入装置
US5825035A (en) * 1993-03-10 1998-10-20 Hitachi, Ltd. Processing method and apparatus using focused ion beam generating means
JPH0836100A (ja) * 1994-07-21 1996-02-06 Ulvac Japan Ltd イオン照射装置
JPH09139184A (ja) * 1995-11-15 1997-05-27 Nikon Corp 静電偏向器の製造方法
US5656092A (en) 1995-12-18 1997-08-12 Eaton Corporation Apparatus for capturing and removing contaminant particles from an interior region of an ion implanter
JPH09293472A (ja) * 1996-04-26 1997-11-11 Fujitsu Ltd 荷電粒子ビーム露光装置、その露光方法及びその製造方法
US5693939A (en) * 1996-07-03 1997-12-02 Purser; Kenneth H. MeV neutral beam ion implanter
ATE194724T1 (de) * 1996-09-27 2000-07-15 Arpad Barna Ionenquelle zur erzeugung von ionen aus gas oder dampf
WO2000017905A1 (en) * 1998-09-24 2000-03-30 Koninklijke Philips Electronics N.V. Ion implantation device arranged to select neutral ions from the ion beam

Also Published As

Publication number Publication date
TWI246105B (en) 2005-12-21
JP5168528B2 (ja) 2013-03-21
WO2002019378A2 (en) 2002-03-07
JP2004508668A (ja) 2004-03-18
EP1314182B1 (de) 2008-12-10
KR100855134B1 (ko) 2008-08-28
KR20030038722A (ko) 2003-05-16
CN1473347A (zh) 2004-02-04
AU2001282300A1 (en) 2002-03-13
US6525326B1 (en) 2003-02-25
EP1314182A2 (de) 2003-05-28
WO2002019378A3 (en) 2002-05-10
CN100468604C (zh) 2009-03-11

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