DE60128165D1 - Verfahren zur Herstellung einer Struktur mit nanometrischen Oberflächenaufrauhungen - Google Patents

Verfahren zur Herstellung einer Struktur mit nanometrischen Oberflächenaufrauhungen

Info

Publication number
DE60128165D1
DE60128165D1 DE60128165T DE60128165T DE60128165D1 DE 60128165 D1 DE60128165 D1 DE 60128165D1 DE 60128165 T DE60128165 T DE 60128165T DE 60128165 T DE60128165 T DE 60128165T DE 60128165 D1 DE60128165 D1 DE 60128165D1
Authority
DE
Germany
Prior art keywords
producing
surface roughening
nanometric surface
nanometric
roughening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60128165T
Other languages
English (en)
Other versions
DE60128165T2 (de
Inventor
Seung-Nam Cha
Hang-Woo Lee
Jun-Hee Choi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung SDI Co Ltd
Original Assignee
Samsung SDI Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung SDI Co Ltd filed Critical Samsung SDI Co Ltd
Application granted granted Critical
Publication of DE60128165D1 publication Critical patent/DE60128165D1/de
Publication of DE60128165T2 publication Critical patent/DE60128165T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Drying Of Semiconductors (AREA)
  • Micromachines (AREA)
  • ing And Chemical Polishing (AREA)
  • Cold Cathode And The Manufacture (AREA)
DE60128165T 2000-01-05 2001-01-03 Verfahren zur Herstellung einer Struktur mit nanometrischen Oberflächenaufrauhungen Expired - Lifetime DE60128165T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2000-0000363A KR100480772B1 (ko) 2000-01-05 2000-01-05 나노 스케일의 표면 거칠기를 가지는 마이크로 구조물의형성방법
KR2000000363 2000-01-05

Publications (2)

Publication Number Publication Date
DE60128165D1 true DE60128165D1 (de) 2007-06-14
DE60128165T2 DE60128165T2 (de) 2007-12-27

Family

ID=19636546

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60128165T Expired - Lifetime DE60128165T2 (de) 2000-01-05 2001-01-03 Verfahren zur Herstellung einer Struktur mit nanometrischen Oberflächenaufrauhungen

Country Status (5)

Country Link
US (1) US6468916B2 (de)
EP (1) EP1114791B1 (de)
JP (1) JP2001262376A (de)
KR (1) KR100480772B1 (de)
DE (1) DE60128165T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100480772B1 (ko) * 2000-01-05 2005-04-06 삼성에스디아이 주식회사 나노 스케일의 표면 거칠기를 가지는 마이크로 구조물의형성방법
JP2002280354A (ja) * 2001-03-19 2002-09-27 Osaka Prefecture 炭素薄膜のエッチング方法及びエッチング装置
FR2837813B1 (fr) * 2002-03-29 2004-06-11 Omnium Traitement Valorisa Installation circulaire pour le traitement biologique des eaux usees
US6767825B1 (en) * 2003-02-03 2004-07-27 United Microelectronics Corporation Etching process for forming damascene structure of the semiconductor
US7052618B2 (en) * 2004-01-28 2006-05-30 Agilent Technologies, Inc. Nanostructures and methods of making the same
DE102005037139A1 (de) * 2005-08-06 2007-02-08 Technische Universität Ilmenau Verfahren zur Verbindung von Mikrobauteilen mit nanostrukturierten Siliziumoberflächen und Verfahren zur deren Herstellung
GR1006890B (el) * 2005-09-16 2010-07-19 Ευαγγελος Γογγολιδης Μεθοδος για την κατασκευη επιφανειων μεγαλου επιφανειακου λογου και μεγαλου λογου ασυμμετριας σε υποστρωματα.
EP2170764A4 (de) * 2007-06-21 2011-06-22 3M Innovative Properties Co Verfahren zur herstellung von hierarchischen artikeln
FI123691B (fi) 2007-12-10 2013-09-30 Beneq Oy Menetelmä erittäin hydrofobisen pinnan tuottamiseksi
FI20070953L (fi) * 2007-12-10 2009-06-11 Beneq Oy Menetelmä ja laite pinnan strukturoimiseksi
KR101100859B1 (ko) * 2010-03-19 2012-01-02 포항공과대학교 산학협력단 다중 스케일 표면 가공 방법 및 이 방법에 의해 제조된 다중 스케일 표면을 가지는 고체 기재
CN102180438A (zh) * 2011-03-28 2011-09-14 中国科学院光电技术研究所 一种可调谐三角形金属纳米粒子阵列结构的制作方法
CN107369668B (zh) * 2011-07-22 2020-08-25 先进封装技术私人有限公司 用于制造半导体封装元件的半导体结构
CN103924241B (zh) * 2014-04-14 2017-01-18 北京工业大学 一种大规模制备低表面应力的表面具备微纳结构的钨的方法
KR102567715B1 (ko) * 2016-04-29 2023-08-17 삼성디스플레이 주식회사 트랜지스터 패널 및 그 제조 방법
CN109972115B (zh) * 2017-12-28 2021-01-19 深圳先进技术研究院 具有微纳米金刚石涂层的硬质合金刀具及其制备方法
US11192782B1 (en) * 2020-09-01 2021-12-07 Aac Acoustic Technologies (Shenzhen) Co., Ltd. Method for preparing silicon wafer with rough surface and silicon wafer
US11305988B2 (en) * 2020-09-01 2022-04-19 Aac Acoustic Technologies (Shenzhen) Co., Ltd. Method for preparing silicon wafer with rough surface and silicon wafer

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0117258B1 (de) * 1983-02-23 1987-05-20 Ibm Deutschland Gmbh Verfahren zur Herstellung von haftfesten Metallschichten auf Kunststoffsubstraten
JPS6218714A (ja) * 1985-07-18 1987-01-27 Nippon Telegr & Teleph Corp <Ntt> アライメントマ−クの形成方法
JPH04216662A (ja) * 1990-12-17 1992-08-06 Mitsubishi Electric Corp 半導体記憶装置の製造方法
US5564959A (en) * 1993-09-08 1996-10-15 Silicon Video Corporation Use of charged-particle tracks in fabricating gated electron-emitting devices
US5753420A (en) * 1995-09-18 1998-05-19 Texas Instruments Incorporated Rough dielectric film by etchback of residue
US5637189A (en) * 1996-06-25 1997-06-10 Xerox Corporation Dry etch process control using electrically biased stop junctions
US6193870B1 (en) * 1997-05-01 2001-02-27 The Regents Of The University Of California Use of a hard mask for formation of gate and dielectric via nanofilament field emission devices
KR100480772B1 (ko) * 2000-01-05 2005-04-06 삼성에스디아이 주식회사 나노 스케일의 표면 거칠기를 가지는 마이크로 구조물의형성방법
KR100464314B1 (ko) * 2000-01-05 2004-12-31 삼성에스디아이 주식회사 전계방출소자 및 그 제조방법
KR100480771B1 (ko) * 2000-01-05 2005-04-06 삼성에스디아이 주식회사 전계방출소자 및 그 제조방법

Also Published As

Publication number Publication date
EP1114791B1 (de) 2007-05-02
DE60128165T2 (de) 2007-12-27
US6468916B2 (en) 2002-10-22
JP2001262376A (ja) 2001-09-26
KR20010068443A (ko) 2001-07-23
KR100480772B1 (ko) 2005-04-06
US20010006851A1 (en) 2001-07-05
EP1114791A2 (de) 2001-07-11
EP1114791A3 (de) 2002-07-24

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