DE60106323D1 - Optisches Halbleitermodul mit Temperaturregelung - Google Patents

Optisches Halbleitermodul mit Temperaturregelung

Info

Publication number
DE60106323D1
DE60106323D1 DE2001606323 DE60106323T DE60106323D1 DE 60106323 D1 DE60106323 D1 DE 60106323D1 DE 2001606323 DE2001606323 DE 2001606323 DE 60106323 T DE60106323 T DE 60106323T DE 60106323 D1 DE60106323 D1 DE 60106323D1
Authority
DE
Germany
Prior art keywords
temperature control
semiconductor module
optical semiconductor
optical
module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE2001606323
Other languages
English (en)
Other versions
DE60106323T2 (de
Inventor
Yasuyuki Yamauchi
Toyotoshi Machida
Nobuhiro Ninomiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Device Innovations Inc
Original Assignee
Fujitsu Quantum Devices Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Quantum Devices Ltd filed Critical Fujitsu Quantum Devices Ltd
Publication of DE60106323D1 publication Critical patent/DE60106323D1/de
Application granted granted Critical
Publication of DE60106323T2 publication Critical patent/DE60106323T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Optical Couplings Of Light Guides (AREA)
DE60106323T 2000-04-21 2001-04-18 Optisches Halbleitermodul mit Temperaturregelung Expired - Lifetime DE60106323T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000121650A JP4071917B2 (ja) 2000-04-21 2000-04-21 光半導体装置
JP2000121650 2000-04-21

Publications (2)

Publication Number Publication Date
DE60106323D1 true DE60106323D1 (de) 2004-11-18
DE60106323T2 DE60106323T2 (de) 2005-02-24

Family

ID=18632270

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60106323T Expired - Lifetime DE60106323T2 (de) 2000-04-21 2001-04-18 Optisches Halbleitermodul mit Temperaturregelung

Country Status (4)

Country Link
US (1) US6487027B2 (de)
EP (1) EP1154530B1 (de)
JP (1) JP4071917B2 (de)
DE (1) DE60106323T2 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6628683B2 (en) * 2000-06-06 2003-09-30 Fuji Photo Film Co., Ltd. Semiconductor laser device and method of controlling light amount of semiconductor laser
US6880983B2 (en) * 2001-09-06 2005-04-19 Finisar Corporation Optoelectronic module with thermally isolated components
US7289544B2 (en) * 2001-09-20 2007-10-30 Sumitomo Electric Industries, Ltd. Optical module
JP4284974B2 (ja) * 2001-11-15 2009-06-24 住友電気工業株式会社 光モジュール
JP2004079989A (ja) * 2002-04-04 2004-03-11 Furukawa Electric Co Ltd:The 光モジュール
US7403347B2 (en) 2002-04-04 2008-07-22 The Furukawa Electric Co., Ltd. Optical transmission module with temperature control
JP2004006465A (ja) * 2002-05-31 2004-01-08 Renesas Technology Corp 半導体装置の製造方法
AU2003244772A1 (en) * 2002-06-07 2003-12-22 Bookham Technology Plc Wavelength stabilized optical device
US6747820B2 (en) * 2002-10-23 2004-06-08 Intel Corporation Cooling opto-electronic packages
US7088518B2 (en) * 2002-12-03 2006-08-08 Finisar Corporation Bidirectional optical device
US20040114938A1 (en) * 2002-12-09 2004-06-17 Nering James Edward Wavelength locking package employing a stacked dielectric filter
US20050207458A1 (en) * 2004-03-22 2005-09-22 Tieyu Zheng Optoelectronic module with integrated cooler
JP4615428B2 (ja) * 2005-12-02 2011-01-19 古河電気工業株式会社 半導体レーザモジュール
JP2009004525A (ja) * 2007-06-21 2009-01-08 Fujitsu Ltd 光源モジュール
JP2010199204A (ja) * 2009-02-24 2010-09-09 Sony Corp 発光装置およびその製造方法
JP2010226032A (ja) 2009-03-25 2010-10-07 Sumitomo Electric Device Innovations Inc 光半導体装置
JP2011129592A (ja) * 2009-12-15 2011-06-30 Sumitomo Electric Ind Ltd 光半導体装置
US9995890B2 (en) * 2010-09-27 2018-06-12 Finisar Corporation Thermal management of a locker etalon in a transmitter optical subassembly
JP6123977B2 (ja) * 2012-02-07 2017-05-10 セイコーエプソン株式会社 原子発振器
DE102013203032A1 (de) * 2013-02-25 2014-02-27 Carl Zeiss Smt Gmbh Optische Anordnung mit einem optischen Element und einem zusätzlichen Wärmeleitelement
KR102237784B1 (ko) 2013-06-10 2021-04-08 주식회사 포벨 파장 안정화 장치가 구비된 레이저 장치
CN104350652B (zh) * 2013-06-10 2021-01-05 光速株式会社 具有波长稳定化装置的激光装置
JP6176784B2 (ja) 2013-09-19 2017-08-09 住友電気工業株式会社 波長制御システムおよび波長制御方法
JP2015068854A (ja) 2013-09-26 2015-04-13 住友電気工業株式会社 光学素子および波長モニタ
JP2015144191A (ja) * 2014-01-31 2015-08-06 住友電工デバイス・イノベーション株式会社 波長可変レーザの波長切り替え方法
JP6319721B2 (ja) * 2014-01-31 2018-05-09 住友電工デバイス・イノベーション株式会社 波長可変レーザの制御方法
JP2015219492A (ja) * 2014-05-21 2015-12-07 日立金属株式会社 通信光検知器
KR20190000078A (ko) * 2017-06-22 2019-01-02 김정수 필터를 포함하는 레이저 장치 및 그 운용방법
JP7090572B2 (ja) 2019-03-08 2022-06-24 株式会社堀場製作所 半導体レーザ装置、及び分析装置
JP7433958B2 (ja) 2020-02-13 2024-02-20 古河電気工業株式会社 レーザ装置およびその制御方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3407893B2 (ja) * 1991-05-27 2003-05-19 パイオニア株式会社 半導体レーザ制御装置
JPH05136513A (ja) * 1991-11-14 1993-06-01 Fuji Photo Film Co Ltd 半導体レーザーの光出力安定化装置
JPH08195528A (ja) * 1995-01-13 1996-07-30 Fujitsu Ltd レーザダイオードモジュール
JP3681447B2 (ja) * 1995-10-25 2005-08-10 富士通株式会社 光波長安定化システム
JP2871623B2 (ja) * 1996-07-11 1999-03-17 日本電気株式会社 半導体レーザ装置
US6120190A (en) * 1997-11-26 2000-09-19 Lasertron, Inc. Spatially variable bandpass filter monitoring and feedback control of laser wavelength especially in wavelength division multiplexing communication systems
US6289028B1 (en) * 1998-02-19 2001-09-11 Uniphase Telecommunications Products, Inc. Method and apparatus for monitoring and control of laser emission wavelength
JPH11251673A (ja) * 1998-02-27 1999-09-17 Nec Corp レーザ信号の波長制御回路
JP2000056185A (ja) * 1998-08-07 2000-02-25 Nippon Telegr & Teleph Corp <Ntt> レーザダイオードモジュール

Also Published As

Publication number Publication date
JP2001308444A (ja) 2001-11-02
JP4071917B2 (ja) 2008-04-02
EP1154530A2 (de) 2001-11-14
EP1154530A3 (de) 2003-04-16
US20010033592A1 (en) 2001-10-25
EP1154530B1 (de) 2004-10-13
US6487027B2 (en) 2002-11-26
DE60106323T2 (de) 2005-02-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: EUDYNA DEVICES INC., YAMANASHI, JP

8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE