DE60043848D1 - Methode zur herstellung eines dielektrischen films mit einer niedrigen dielektrizitätskonstante und halbleiteranordnung mit so einem film - Google Patents
Methode zur herstellung eines dielektrischen films mit einer niedrigen dielektrizitätskonstante und halbleiteranordnung mit so einem filmInfo
- Publication number
- DE60043848D1 DE60043848D1 DE60043848T DE60043848T DE60043848D1 DE 60043848 D1 DE60043848 D1 DE 60043848D1 DE 60043848 T DE60043848 T DE 60043848T DE 60043848 T DE60043848 T DE 60043848T DE 60043848 D1 DE60043848 D1 DE 60043848D1
- Authority
- DE
- Germany
- Prior art keywords
- film
- production
- semiconductor assembly
- dielectric constant
- low dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Paints Or Removers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP37468299 | 1999-12-28 | ||
PCT/JP2000/008933 WO2001048806A1 (fr) | 1999-12-28 | 2000-12-15 | Procede de production d'un film a faible constante dielectrique et substrat semi-conducteur pourvu de ce film a faible constante dielectrique |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60043848D1 true DE60043848D1 (de) | 2010-04-01 |
Family
ID=18504259
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60043848T Expired - Lifetime DE60043848D1 (de) | 1999-12-28 | 2000-12-15 | Methode zur herstellung eines dielektrischen films mit einer niedrigen dielektrizitätskonstante und halbleiteranordnung mit so einem film |
Country Status (7)
Country | Link |
---|---|
US (1) | US6599846B2 (de) |
EP (1) | EP1197999B1 (de) |
JP (1) | JP3998979B2 (de) |
KR (1) | KR100430464B1 (de) |
DE (1) | DE60043848D1 (de) |
TW (1) | TW499715B (de) |
WO (1) | WO2001048806A1 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100515584B1 (ko) * | 2002-08-06 | 2005-09-20 | 주식회사 엘지화학 | 유기실리케이트 중합체 및 이를 함유하는 절연막 |
US6812135B2 (en) * | 2002-10-30 | 2004-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd | Adhesion enhancement between CVD dielectric and spin-on low-k silicate films |
KR100488347B1 (ko) * | 2002-10-31 | 2005-05-10 | 삼성전자주식회사 | 실록산계 수지 및 이를 이용한 반도체 층간 절연막의형성방법 |
JP4225765B2 (ja) | 2002-10-31 | 2009-02-18 | 日揮触媒化成株式会社 | 低誘電率非晶質シリカ系被膜の形成方法および該方法より得られる低誘電率非晶質シリカ系被膜 |
JP4471564B2 (ja) | 2002-10-31 | 2010-06-02 | 日揮触媒化成株式会社 | 低誘電率非晶質シリカ系被膜形成用塗布液および該塗布液の調製方法 |
JP4756128B2 (ja) | 2004-10-20 | 2011-08-24 | 日揮触媒化成株式会社 | 半導体加工用保護膜形成用塗布液、その調製方法およびこれより得られる半導体加工用保護膜 |
JP4860953B2 (ja) * | 2005-07-08 | 2012-01-25 | 富士通株式会社 | シリカ系被膜形成用材料、シリカ系被膜及びその製造方法、多層配線及びその製造方法、並びに、半導体装置及びその製造方法 |
JP2007138144A (ja) * | 2005-10-18 | 2007-06-07 | Hitachi Chem Co Ltd | シリカ系被膜形成用組成物 |
JP5160237B2 (ja) | 2005-12-22 | 2013-03-13 | 日揮触媒化成株式会社 | 低誘電率非晶質シリカ系被膜形成用塗布液および該塗布液から得られる低誘電率非晶質シリカ系被膜 |
KR100909384B1 (ko) * | 2006-06-26 | 2009-07-24 | 제일모직주식회사 | 레지스트 하층막용 하드마스크 조성물 및 이를 이용한반도체 집적회로 디바이스의 제조방법 |
JP5014709B2 (ja) | 2006-08-28 | 2012-08-29 | 日揮触媒化成株式会社 | 低誘電率非晶質シリカ系被膜の形成方法および該方法より得られる低誘電率非晶質シリカ系被膜 |
JP5119832B2 (ja) * | 2007-09-27 | 2013-01-16 | 富士通株式会社 | 界面ラフネス緩和膜、配線層、半導体装置および半導体装置の製造方法 |
US20090093135A1 (en) * | 2007-10-04 | 2009-04-09 | Asm Japan K.K. | Semiconductor manufacturing apparatus and method for curing material with uv light |
KR20110021951A (ko) * | 2008-05-26 | 2011-03-04 | 바스프 에스이 | 다공성 물질의 제조 방법 및 그 방법으로 제조된 다공성 물질 |
US20160347924A1 (en) * | 2014-02-11 | 2016-12-01 | Dongsung Chemical Co., Ltd. | Open Cell Foam Composition, Hydrophobic Open Cell Foam and a Method for Preparing Them using the Same |
KR102650216B1 (ko) | 2018-03-09 | 2024-03-21 | 삼성전자주식회사 | 산화물층의 형성 방법 및 반도체 소자의 제조 방법 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
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US4075391A (en) * | 1975-10-29 | 1978-02-21 | Xerox Corporation | Production of ferrite electrostatographic carrier materials having improved properties |
US4363706A (en) * | 1980-03-07 | 1982-12-14 | Imi Kynoch Limited | Anode |
JPS6357755A (ja) * | 1986-05-30 | 1988-03-12 | Kobe Steel Ltd | 溶射用Ni基合金粉末及びその製造方法 |
EP0308851A3 (de) * | 1987-09-24 | 1990-03-21 | Air Products And Chemicals, Inc. | Verfahren zur Herstellung von Dickschichtkupferleitern in einem Infrarotofen |
JPH088169B2 (ja) * | 1989-09-12 | 1996-01-29 | 株式会社ジャパンエナジー | Fe―Si―Al合金磁性薄膜の製造方法 |
US5153295A (en) * | 1990-07-20 | 1992-10-06 | Rensselaer Polytechnic Institute | Carbosilane polymer precursors to silicon carbide ceramics |
JP3418458B2 (ja) | 1993-08-31 | 2003-06-23 | 富士通株式会社 | 半導体装置の製造方法 |
US5413952A (en) * | 1994-02-02 | 1995-05-09 | Motorola, Inc. | Direct wafer bonded structure method of making |
US5547703A (en) * | 1994-04-11 | 1996-08-20 | Dow Corning Corporation | Method of forming si-o containing coatings |
JP3813268B2 (ja) * | 1996-03-25 | 2006-08-23 | 触媒化成工業株式会社 | 低誘電率シリカ系被膜形成用塗布液および低誘電率被膜付基材 |
US5789325A (en) * | 1996-04-29 | 1998-08-04 | Dow Corning Corporation | Coating electronic substrates with silica derived from polycarbosilane |
JP3354431B2 (ja) | 1997-03-31 | 2002-12-09 | 東レ・ダウコーニング・シリコーン株式会社 | 電気絶縁性薄膜形成用組成物および電気絶縁性薄膜の形成方法 |
EP0881668A3 (de) * | 1997-05-28 | 2000-11-15 | Dow Corning Toray Silicone Company, Ltd. | Abscheidung eines elektrisch isolierenden Dünnfilms mit einer niedrigen Dielektrizitätskonstante |
US5883219A (en) * | 1997-05-29 | 1999-03-16 | International Business Machines Corporation | Integrated circuit device and process for its manufacture |
WO1999003926A1 (fr) * | 1997-07-15 | 1999-01-28 | Asahi Kasei Kogyo Kabushiki Kaisha | Composition alcoxysilane/polymere organique destinee a la production de fines pellicules isolantes et procede d'utilisation |
TW439197B (en) * | 1997-10-31 | 2001-06-07 | Dow Corning | Electronic coating having low dielectric constant |
US6372666B1 (en) * | 1998-08-31 | 2002-04-16 | Alliedsignal Inc. | Process for producing dielectric thin films |
US6639015B1 (en) | 1998-09-01 | 2003-10-28 | Catalysts & Chemicals Industries Co., Ltd. | Coating liquid for forming a silica-containing film with a low-dielectric constant |
WO2000018847A1 (fr) | 1998-09-25 | 2000-04-06 | Catalysts & Chemicals Industries Co., Ltd. | Fluide de revetement permettant de former une pellicule protectrice a base de silice dotee d'une faible permittivite et substrat recouvert d'une pellicule protectrice de faible permittivite |
US6214746B1 (en) * | 1999-05-07 | 2001-04-10 | Honeywell International Inc. | Nanoporous material fabricated using a dissolvable reagent |
US6225238B1 (en) * | 1999-06-07 | 2001-05-01 | Allied Signal Inc | Low dielectric constant polyorganosilicon coatings generated from polycarbosilanes |
-
2000
- 2000-12-15 US US09/914,418 patent/US6599846B2/en not_active Expired - Lifetime
- 2000-12-15 EP EP00981780A patent/EP1197999B1/de not_active Expired - Lifetime
- 2000-12-15 JP JP2001548426A patent/JP3998979B2/ja not_active Expired - Lifetime
- 2000-12-15 KR KR20017011002A patent/KR100430464B1/ko not_active IP Right Cessation
- 2000-12-15 WO PCT/JP2000/008933 patent/WO2001048806A1/ja active Application Filing
- 2000-12-15 DE DE60043848T patent/DE60043848D1/de not_active Expired - Lifetime
- 2000-12-20 TW TW089127417A patent/TW499715B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP3998979B2 (ja) | 2007-10-31 |
EP1197999A1 (de) | 2002-04-17 |
US6599846B2 (en) | 2003-07-29 |
TW499715B (en) | 2002-08-21 |
US20020187652A1 (en) | 2002-12-12 |
EP1197999B1 (de) | 2010-02-17 |
KR100430464B1 (ko) | 2004-05-10 |
EP1197999A4 (de) | 2006-04-12 |
WO2001048806A1 (fr) | 2001-07-05 |
KR20010101851A (ko) | 2001-11-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |