DE60038424D1 - Variable Erfassung von Bloomingladungen um den Dynymikbereich zu erweitern - Google Patents

Variable Erfassung von Bloomingladungen um den Dynymikbereich zu erweitern

Info

Publication number
DE60038424D1
DE60038424D1 DE60038424T DE60038424T DE60038424D1 DE 60038424 D1 DE60038424 D1 DE 60038424D1 DE 60038424 T DE60038424 T DE 60038424T DE 60038424 T DE60038424 T DE 60038424T DE 60038424 D1 DE60038424 D1 DE 60038424D1
Authority
DE
Germany
Prior art keywords
dynymikbereich
expand
variable acquisition
blooming
charges
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60038424T
Other languages
English (en)
Other versions
DE60038424T2 (de
Inventor
Robert Michael Guidash
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Application granted granted Critical
Publication of DE60038424D1 publication Critical patent/DE60038424D1/de
Publication of DE60038424T2 publication Critical patent/DE60038424T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14654—Blooming suppression
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/587—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields
    • H04N25/589—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields with different integration times, e.g. short and long exposures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE60038424T 1999-10-26 2000-10-17 Variables sammeln abgestrahlter ladung zur erweiterung des dynamikbereichs Expired - Lifetime DE60038424T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/426,833 US6307195B1 (en) 1999-10-26 1999-10-26 Variable collection of blooming charge to extend dynamic range
US426833 1999-10-26

Publications (2)

Publication Number Publication Date
DE60038424D1 true DE60038424D1 (de) 2008-05-08
DE60038424T2 DE60038424T2 (de) 2009-04-23

Family

ID=23692393

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60038424T Expired - Lifetime DE60038424T2 (de) 1999-10-26 2000-10-17 Variables sammeln abgestrahlter ladung zur erweiterung des dynamikbereichs

Country Status (6)

Country Link
US (1) US6307195B1 (de)
EP (2) EP1775934A2 (de)
JP (1) JP4037602B2 (de)
KR (1) KR100659443B1 (de)
DE (1) DE60038424T2 (de)
TW (1) TW468089B (de)

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US7830435B2 (en) * 2003-09-03 2010-11-09 Eastman Kodak Company Image sensor and image capture system with extended dynamic range
US7115855B2 (en) * 2003-09-05 2006-10-03 Micron Technology, Inc. Image sensor having pinned floating diffusion diode
US7446812B2 (en) 2004-01-13 2008-11-04 Micron Technology, Inc. Wide dynamic range operations for imaging
US6873282B1 (en) * 2004-03-04 2005-03-29 Charles Douglas Murphy Differential time-to-threshold A/D conversion in digital imaging arrays
US7126512B2 (en) * 2004-03-19 2006-10-24 Charles Douglas Murphy Comparing circuits for time-to-threshold A/D conversion in digital imaging arrays
JP4317115B2 (ja) * 2004-04-12 2009-08-19 国立大学法人東北大学 固体撮像装置、光センサおよび固体撮像装置の動作方法
US7053354B1 (en) * 2004-05-24 2006-05-30 Eastman Kodak Company Method for reducing dark current for an array of active pixel sensor cells
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US7193198B2 (en) * 2004-10-01 2007-03-20 Omnivision Technologies, Inc. Image sensor and pixel that has variable capacitance output or floating node
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JP4745735B2 (ja) * 2005-06-30 2011-08-10 キヤノン株式会社 画像入力装置及びその制御方法
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US20070040922A1 (en) * 2005-08-22 2007-02-22 Micron Technology, Inc. HDR/AB on multi-way shared pixels
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KR100877691B1 (ko) * 2005-12-08 2009-01-09 한국전자통신연구원 이미지 센서 및 이미지 센서의 트랜스퍼 트랜지스터 구동방법
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Also Published As

Publication number Publication date
EP1775934A2 (de) 2007-04-18
KR100659443B1 (ko) 2006-12-18
EP1096790B1 (de) 2008-03-26
EP1096790A2 (de) 2001-05-02
JP4037602B2 (ja) 2008-01-23
DE60038424T2 (de) 2009-04-23
JP2001186414A (ja) 2001-07-06
US6307195B1 (en) 2001-10-23
EP1096790A3 (de) 2003-03-26
TW468089B (en) 2001-12-11
KR20010067339A (ko) 2001-07-12

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Inventor name: GUIDASH, ROBERT MICHAEL, ROCHESTER, N.Y., US

8364 No opposition during term of opposition