DE60036376D1 - Verfahren und vorrichtung zur sekundärionenausbeuteerhöhung - Google Patents

Verfahren und vorrichtung zur sekundärionenausbeuteerhöhung

Info

Publication number
DE60036376D1
DE60036376D1 DE60036376T DE60036376T DE60036376D1 DE 60036376 D1 DE60036376 D1 DE 60036376D1 DE 60036376 T DE60036376 T DE 60036376T DE 60036376 T DE60036376 T DE 60036376T DE 60036376 D1 DE60036376 D1 DE 60036376D1
Authority
DE
Germany
Prior art keywords
secondary land
land exploitation
exploitation
land
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60036376T
Other languages
English (en)
Other versions
DE60036376T2 (de
Inventor
Robert L Gerlach
Locke Christman
Mark Utlaut
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
FEI Co
Original Assignee
Koninklijke Philips Electronics NV
FEI Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV, FEI Co filed Critical Koninklijke Philips Electronics NV
Publication of DE60036376D1 publication Critical patent/DE60036376D1/de
Application granted granted Critical
Publication of DE60036376T2 publication Critical patent/DE60036376T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/252—Tubes for spot-analysing by electron or ion beams; Microanalysers
    • H01J37/256—Tubes for spot-analysing by electron or ion beams; Microanalysers using scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/25—Tubes for localised analysis using electron or ion beams
    • H01J2237/2505—Tubes for localised analysis using electron or ion beams characterised by their application
    • H01J2237/2516—Secondary particles mass or energy spectrometry
    • H01J2237/2527—Ions [SIMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks
    • H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
    • Y10S977/843—Gas phase catalytic growth, i.e. chemical vapor deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/88—Manufacture, treatment, or detection of nanostructure with arrangement, process, or apparatus for testing
    • Y10S977/881—Microscopy or spectroscopy, e.g. sem, tem
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
    • Y10S977/891—Vapor phase deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/895—Manufacture, treatment, or detection of nanostructure having step or means utilizing chemical property
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/949—Radiation emitter using nanostructure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electron Tubes For Measurement (AREA)
DE60036376T 1999-07-09 2000-07-05 Verfahren und vorrichtung zur sekundärionenausbeuteerhöhung Expired - Lifetime DE60036376T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/350,718 US6414307B1 (en) 1999-07-09 1999-07-09 Method and apparatus for enhancing yield of secondary ions
US350718 1999-07-09
PCT/EP2000/006364 WO2001004611A2 (en) 1999-07-09 2000-07-05 Method and apparatus for enhancing yield of secondary ions

Publications (2)

Publication Number Publication Date
DE60036376D1 true DE60036376D1 (de) 2007-10-25
DE60036376T2 DE60036376T2 (de) 2008-01-17

Family

ID=23377894

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60036376T Expired - Lifetime DE60036376T2 (de) 1999-07-09 2000-07-05 Verfahren und vorrichtung zur sekundärionenausbeuteerhöhung

Country Status (5)

Country Link
US (1) US6414307B1 (de)
EP (1) EP1185857B1 (de)
JP (2) JP4863593B2 (de)
DE (1) DE60036376T2 (de)
WO (1) WO2001004611A2 (de)

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6414307B1 (en) * 1999-07-09 2002-07-02 Fei Company Method and apparatus for enhancing yield of secondary ions
WO2001054163A1 (en) * 2000-01-21 2001-07-26 Koninklijke Philips Electronics N.V. Shaped and low density focused ion beams
FR2806527B1 (fr) 2000-03-20 2002-10-25 Schlumberger Technologies Inc Colonne a focalisation simultanee d'un faisceau de particules et d'un faisceau optique
US7246111B1 (en) 2000-06-30 2007-07-17 Ncr Corporation Capturing database system information
US6738756B1 (en) 2000-06-30 2004-05-18 Ncr Corporation Analysis method and apparatus for a parallel system
US7185000B1 (en) 2000-06-30 2007-02-27 Ncr Corp. Method and apparatus for presenting query plans
US6514866B2 (en) * 2001-01-12 2003-02-04 North Carolina State University Chemically enhanced focused ion beam micro-machining of copper
US6977386B2 (en) * 2001-01-19 2005-12-20 Fei Company Angular aperture shaped beam system and method
US6670610B2 (en) * 2001-11-26 2003-12-30 Applied Materials, Inc. System and method for directing a miller
AU2003211027A1 (en) * 2002-03-27 2003-10-13 Nanoink, Inc. Method and apparatus for aligning patterns on a substrate
AU2003226331A1 (en) * 2002-04-10 2003-10-27 Johns Hopkins University Miniaturized sample scanning mass analyzer
US8202440B1 (en) 2002-08-27 2012-06-19 Kla-Tencor Corporation Methods and apparatus for electron beam assisted etching at low temperatures
JP4205992B2 (ja) * 2003-06-19 2009-01-07 株式会社日立ハイテクノロジーズ イオンビームによる試料加工方法、イオンビーム加工装置、イオンビーム加工システム、及びそれを用いた電子部品の製造方法
EP1501115B1 (de) * 2003-07-14 2009-07-01 FEI Company Zweistrahlsystem
US8110814B2 (en) 2003-10-16 2012-02-07 Alis Corporation Ion sources, systems and methods
US7786451B2 (en) * 2003-10-16 2010-08-31 Alis Corporation Ion sources, systems and methods
US7504639B2 (en) * 2003-10-16 2009-03-17 Alis Corporation Ion sources, systems and methods
US7321118B2 (en) * 2005-06-07 2008-01-22 Alis Corporation Scanning transmission ion microscope
US7557360B2 (en) * 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7495232B2 (en) * 2003-10-16 2009-02-24 Alis Corporation Ion sources, systems and methods
US7557358B2 (en) 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7521693B2 (en) * 2003-10-16 2009-04-21 Alis Corporation Ion sources, systems and methods
US7601953B2 (en) * 2006-03-20 2009-10-13 Alis Corporation Systems and methods for a gas field ion microscope
US7554097B2 (en) * 2003-10-16 2009-06-30 Alis Corporation Ion sources, systems and methods
US7488952B2 (en) * 2003-10-16 2009-02-10 Alis Corporation Ion sources, systems and methods
US7557359B2 (en) * 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7554096B2 (en) * 2003-10-16 2009-06-30 Alis Corporation Ion sources, systems and methods
US7485873B2 (en) * 2003-10-16 2009-02-03 Alis Corporation Ion sources, systems and methods
US9159527B2 (en) * 2003-10-16 2015-10-13 Carl Zeiss Microscopy, Llc Systems and methods for a gas field ionization source
US7368727B2 (en) * 2003-10-16 2008-05-06 Alis Technology Corporation Atomic level ion source and method of manufacture and operation
US7511280B2 (en) * 2003-10-16 2009-03-31 Alis Corporation Ion sources, systems and methods
US7414243B2 (en) * 2005-06-07 2008-08-19 Alis Corporation Transmission ion microscope
US7518122B2 (en) 2003-10-16 2009-04-14 Alis Corporation Ion sources, systems and methods
US7557361B2 (en) * 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7786452B2 (en) * 2003-10-16 2010-08-31 Alis Corporation Ion sources, systems and methods
US7511279B2 (en) * 2003-10-16 2009-03-31 Alis Corporation Ion sources, systems and methods
US7659109B2 (en) * 2004-05-17 2010-02-09 Applied Biosystems, Llc Pasting edge heater
US20060022136A1 (en) * 2004-07-29 2006-02-02 Moore Thomas M Multiple gas injection system for charged particle beam instruments
JP4300168B2 (ja) * 2004-09-10 2009-07-22 株式会社日立ハイテクノロジーズ 集束イオンビーム装置、及びそれに用いる絞り
DE102004049518B3 (de) * 2004-10-11 2006-02-02 Infineon Technologies Ag Verfahren zum tiefenaufgelösten Charakterisieren einer Schicht eines Trägers
US7388218B2 (en) * 2005-04-04 2008-06-17 Fei Company Subsurface imaging using an electron beam
WO2006116752A2 (en) 2005-04-28 2006-11-02 The Regents Of The University Of California Compositions comprising nanostructures for cell, tissue and artificial organ growth, and methods for making and using same
JP4845468B2 (ja) * 2005-10-06 2011-12-28 オリンパス株式会社 観察装置
US20070116373A1 (en) * 2005-11-23 2007-05-24 Sonosite, Inc. Multi-resolution adaptive filtering
WO2007067296A2 (en) * 2005-12-02 2007-06-14 Alis Corporation Ion sources, systems and methods
WO2007089124A1 (en) * 2006-02-02 2007-08-09 Cebt Co. Ltd. Device for sustaining differential vacuum degrees for electron column
CN100511431C (zh) 2006-02-22 2009-07-08 Tdk股份有限公司 磁记录介质的制造方法
JP4626611B2 (ja) * 2006-02-22 2011-02-09 Ｔｄｋ株式会社 磁気記録媒体の製造方法
US20070227883A1 (en) * 2006-03-20 2007-10-04 Ward Billy W Systems and methods for a helium ion pump
US7804068B2 (en) * 2006-11-15 2010-09-28 Alis Corporation Determining dopant information
DE102008009640A1 (de) * 2008-02-18 2009-08-27 Carl Zeiss Nts Gmbh Prozessierungssystem
DE102008042179B9 (de) * 2008-09-17 2013-10-10 Carl Zeiss Microscopy Gmbh Verfahren zur Analyse einer Probe
US9244793B1 (en) 2008-11-04 2016-01-26 Teradata Us, Inc. Using target database system statistics in emulation
JP5702552B2 (ja) * 2009-05-28 2015-04-15 エフ イー アイ カンパニＦｅｉ Ｃｏｍｐａｎｙ デュアルビームシステムの制御方法
US20110085968A1 (en) * 2009-10-13 2011-04-14 The Regents Of The University Of California Articles comprising nano-materials for geometry-guided stem cell differentiation and enhanced bone growth
DE102010001347A1 (de) 2010-01-28 2011-08-18 Carl Zeiss NTS GmbH, 73447 Vorrichtung zur Übertragung von Energie und/oder zum Transport eines Ions sowie Teilchenstrahlgerät mit einer solchen Vorrichtung
DE102010001349B9 (de) 2010-01-28 2014-08-28 Carl Zeiss Microscopy Gmbh Vorrichtung zum Fokussieren sowie zum Speichern von Ionen
KR101161956B1 (ko) * 2010-05-03 2012-07-04 삼성전기주식회사 화학성분 분석 방법 및 화학성분 분석 장치
CN102095619B (zh) * 2010-12-23 2012-11-28 中国原子能科学研究院 一种以阿皮松为载体的擦拭样品微粒的回收方法
US9275823B2 (en) 2012-03-21 2016-03-01 Fei Company Multiple gas injection system
JP6230282B2 (ja) * 2012-07-12 2017-11-15 キヤノン株式会社 質量分析装置
JP6070383B2 (ja) * 2013-04-17 2017-02-01 新日鐵住金株式会社 水素分布観察装置及び水素分布観察方法
US9245722B2 (en) * 2013-09-16 2016-01-26 Georgia Tech Research Corporation SMS probe and SEM imaging system and methods of use
CN105103265B (zh) * 2013-12-13 2017-05-10 中国科学院地质与地球物理研究所 使用二次离子质谱仪分析气体样品的系统和方法
WO2016120579A1 (en) * 2015-01-27 2016-08-04 Nanoscope Services Limited Charged particle instruments
EP3477682B1 (de) * 2017-10-30 2020-03-11 FEI Company Verbesserte sekundärionen-massenspektrometrie-technik
US11440151B2 (en) 2019-06-07 2022-09-13 Applied Materials Israel Ltd. Milling a multi-layered object
US10971618B2 (en) 2019-08-02 2021-04-06 Applied Materials Israel Ltd. Generating milled structural elements with a flat upper surface
US11276557B2 (en) 2019-09-17 2022-03-15 Applied Materials Israel Ltd. Forming a vertical surface
DE102020112220B9 (de) 2020-05-06 2022-05-25 Carl Zeiss Microscopy Gmbh Teilchenstrahlgerät zum Abtragen mindestens eines Materials von einer Materialeinheit und Anordnen des Materials an einem Objekt
CN112863979B (zh) * 2021-01-14 2022-02-08 西安交通大学 一种微纳尺度离子束外束引出装置
CN113035674A (zh) * 2021-02-07 2021-06-25 上海精测半导体技术有限公司 一种多气源气体注射装置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH036914Y2 (de) * 1985-09-10 1991-02-21
WO1989004052A1 (en) 1987-10-22 1989-05-05 Oxford Instruments Limited Exposing substrates to ion beams
JP2650930B2 (ja) 1987-11-24 1997-09-10 株式会社日立製作所 超格子構作の素子製作方法
US4874947A (en) * 1988-02-26 1989-10-17 Micrion Corporation Focused ion beam imaging and process control
JPH0710403Y2 (ja) * 1988-03-03 1995-03-08 東洋リビング株式会社 中湿庫
US5087815A (en) * 1989-11-08 1992-02-11 Schultz J Albert High resolution mass spectrometry of recoiled ions for isotopic and trace elemental analysis
JP2763172B2 (ja) 1990-03-19 1998-06-11 株式会社神戸製鋼所 ダイヤモンド薄膜のエッチング方法
DE69130909T2 (de) 1990-06-26 1999-06-24 Fujitsu Ltd Plasmabehandlungsverfahren eines Resists unter Verwendung von Wasserstoffgas
US5149974A (en) * 1990-10-29 1992-09-22 International Business Machines Corporation Gas delivery for ion beam deposition and etching
WO1994013010A1 (en) * 1991-04-15 1994-06-09 Fei Company Process of shaping features of semiconductor devices
US5188705A (en) 1991-04-15 1993-02-23 Fei Company Method of semiconductor device manufacture
US5272338A (en) * 1992-05-21 1993-12-21 The Pennsylvania Research Corporation Molecular imaging system
JP3238550B2 (ja) * 1992-11-02 2001-12-17 株式会社東芝 構造体の欠陥修正方法
JP3153391B2 (ja) 1993-07-07 2001-04-09 株式会社日立製作所 集束イオンビーム装置
US5435850A (en) 1993-09-17 1995-07-25 Fei Company Gas injection system
AU2914095A (en) 1994-06-28 1996-01-25 Fei Company Charged particle deposition of electrically insulating films
JP3455306B2 (ja) * 1994-10-24 2003-10-14 三菱電機株式会社 異物分析装置及び半導体製造制御装置並びに異物分析方法及び半導体製造制御方法
US5958799A (en) * 1995-04-13 1999-09-28 North Carolina State University Method for water vapor enhanced charged-particle-beam machining
US5798529A (en) * 1996-05-28 1998-08-25 International Business Machines Corporation Focused ion beam metrology
JP3081990B2 (ja) 1996-06-20 2000-08-28 セイコーインスツルメンツ株式会社 イオンビーム加工装置
JPH10223168A (ja) * 1997-02-12 1998-08-21 Hitachi Ltd 試料分析装置
JPH10282025A (ja) * 1997-04-11 1998-10-23 Sony Corp ２次イオン質量分析方法
JP3739573B2 (ja) * 1998-07-27 2006-01-25 エスアイアイ・ナノテクノロジー株式会社 フォトマスクの欠陥修正方法及びそれに用いる装置
US6414307B1 (en) * 1999-07-09 2002-07-02 Fei Company Method and apparatus for enhancing yield of secondary ions

Also Published As

Publication number Publication date
JP2012008145A (ja) 2012-01-12
JP4863593B2 (ja) 2012-01-25
US6414307B1 (en) 2002-07-02
DE60036376T2 (de) 2008-01-17
EP1185857B1 (de) 2007-09-12
JP2003504616A (ja) 2003-02-04
WO2001004611A2 (en) 2001-01-18
WO2001004611A3 (en) 2001-12-13
JP5449286B2 (ja) 2014-03-19
EP1185857A2 (de) 2002-03-13

Similar Documents

Publication Publication Date Title
DE60036376D1 (de) Verfahren und vorrichtung zur sekundärionenausbeuteerhöhung
ATE269512T1 (de) Verfahren und vorrichtung zur nox reduktion
DE69917978D1 (de) Vorrichtung und Verfahren zur Komplettierung einer unterirdischen Bohrung
DE60020614D1 (de) Vorrichtung und Verfahren zur Planarisierung
DE60018733D1 (de) Vorrichtung und verfahren zur probenanalyse
ATE275779T1 (de) Verfahren und vorrichtung zur aufwärtsplanung
DE69929788D1 (de) Verfahren und vorrichtung zur diversitätsübertragung
DE60021077D1 (de) Vorrichtung und verfahren zur probenabgabe
DE69835511D1 (de) Verfahren und Vorrichtung zur Durckimpulsbetätigte Telemetrie
DE60037008D1 (de) Verfahren und vorrichtung zur synchronisierung
DE60030658D1 (de) Verfahren und Vorrichtung zur Überprüfung von Gegenständen
DE69935789D1 (de) Verfahren und vorrichtung zur abwärtsneigung des antennendiagramms
DE69940804D1 (de) Verfahren und vorrichtung zur unterdrückung von abklingartefakten
DE60034121D1 (de) Verfahren und vorrichtung zur streuparameter-kalibrierung
DE69910543D1 (de) Verfahren und vorrichtung zur handhabung von bohrlochrohren
DE60132586D1 (de) Verfahren und vorrichtung zur abtastratenwandlung
DE50007073D1 (de) Verfahren und vorrichtung zur strahlformung
DE69903497T2 (de) Verfahren und Vorrichtung zur Unterdrückung von Resonanz
ATE299060T1 (de) Verfahren und vorrichtung zur drehbearbeitung
DE19983717T1 (de) Vorrichtung und Verfahren zur Ausrichtung
DE60010094D1 (de) Verfahren und vorrichtung zur pfadsuche
DE60028903D1 (de) Verfahren und Vorrichtung zur Kommunikationskontrolle
DE10196323T1 (de) Verfahren und Vorrichtung zur Sicherung einer Erdbewegungsmaschine
DE69934791D1 (de) Verfahren und vorrichtung zur sendeleistungssteuerung
DE60037256D1 (de) Vorrichtung und verfahren zur kristallisation

Legal Events

Date Code Title Description
8364 No opposition during term of opposition