DE60028157D1 - Halbleiteranordnung mit guter Sperrverzögerungsfestigkeit und Verfahren zur Herstellung - Google Patents

Halbleiteranordnung mit guter Sperrverzögerungsfestigkeit und Verfahren zur Herstellung

Info

Publication number
DE60028157D1
DE60028157D1 DE60028157T DE60028157T DE60028157D1 DE 60028157 D1 DE60028157 D1 DE 60028157D1 DE 60028157 T DE60028157 T DE 60028157T DE 60028157 T DE60028157 T DE 60028157T DE 60028157 D1 DE60028157 D1 DE 60028157D1
Authority
DE
Germany
Prior art keywords
manufacture
semiconductor device
reverse recovery
recovery capability
good reverse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60028157T
Other languages
English (en)
Other versions
DE60028157T2 (de
Inventor
Ko Yoshikawa
Takeshi Fujii
Michio Nemoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Application granted granted Critical
Publication of DE60028157D1 publication Critical patent/DE60028157D1/de
Publication of DE60028157T2 publication Critical patent/DE60028157T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE60028157T 1999-11-05 2000-10-27 Halbleiteranordnung mit guter Sperrverzögerungsfestigkeit und Verfahren zur Herstellung Expired - Lifetime DE60028157T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP31542799A JP4653273B2 (ja) 1999-11-05 1999-11-05 半導体装置、および、その製造方法
JP31542799 1999-11-05

Publications (2)

Publication Number Publication Date
DE60028157D1 true DE60028157D1 (de) 2006-06-29
DE60028157T2 DE60028157T2 (de) 2006-09-28

Family

ID=18065255

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60028157T Expired - Lifetime DE60028157T2 (de) 1999-11-05 2000-10-27 Halbleiteranordnung mit guter Sperrverzögerungsfestigkeit und Verfahren zur Herstellung

Country Status (4)

Country Link
US (1) US6870199B1 (de)
EP (1) EP1098371B1 (de)
JP (1) JP4653273B2 (de)
DE (1) DE60028157T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4653273B2 (ja) 1999-11-05 2011-03-16 富士電機システムズ株式会社 半導体装置、および、その製造方法
GB0130018D0 (en) 2001-12-15 2002-02-06 Koninkl Philips Electronics Nv Semiconductor devices and their manufacture
JP2005340528A (ja) * 2004-05-27 2005-12-08 Fuji Electric Device Technology Co Ltd 半導体装置およびその製造方法
JP4775539B2 (ja) * 2005-03-22 2011-09-21 サンケン電気株式会社 半導体装置の製法
US8669554B2 (en) 2006-05-10 2014-03-11 Ho-Yuan Yu Fast recovery reduced p-n junction rectifier
US7880166B2 (en) * 2006-05-10 2011-02-01 Ho-Yuan Yu Fast recovery reduced p-n junction rectifier
EP2330617A4 (de) 2008-09-01 2012-01-25 Rohm Co Ltd Halbleiterbauelement und herstellungsverfahren dafür
JP2010098189A (ja) * 2008-10-17 2010-04-30 Toshiba Corp 半導体装置
CN102064202B (zh) * 2009-11-12 2013-01-09 上海华虹Nec电子有限公司 应用于锗硅三极管的轻掺杂二极管结构
JP5450490B2 (ja) * 2011-03-24 2014-03-26 株式会社東芝 電力用半導体装置
DE112012006215B4 (de) 2012-04-13 2020-09-10 Mitsubishi Electric Corp. Diode
JP5549704B2 (ja) * 2012-04-26 2014-07-16 富士電機株式会社 半導体装置およびその製造方法
JP6263966B2 (ja) 2012-12-12 2018-01-24 富士電機株式会社 半導体装置
CN103426936B (zh) * 2013-08-22 2015-10-21 电子科技大学 一种垂直型恒流二极管及其制造方法
JP2016100455A (ja) * 2014-11-21 2016-05-30 三菱電機株式会社 半導体装置及びその製造方法
JP6550995B2 (ja) 2015-07-16 2019-07-31 富士電機株式会社 半導体装置
US10867798B2 (en) 2016-12-08 2020-12-15 Fuji Electric Co., Ltd. Method of manufacturing semiconductor device
JP6766885B2 (ja) 2016-12-08 2020-10-14 富士電機株式会社 半導体装置の製造方法

Family Cites Families (19)

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Publication number Priority date Publication date Assignee Title
US3988772A (en) * 1974-05-28 1976-10-26 General Electric Company Current isolation means for integrated power devices
US3988771A (en) * 1974-05-28 1976-10-26 General Electric Company Spatial control of lifetime in semiconductor device
US4165517A (en) * 1977-02-28 1979-08-21 Electric Power Research Institute, Inc. Self-protection against breakover turn-on failure in thyristors through selective base lifetime control
US4567430A (en) * 1981-09-08 1986-01-28 Recognition Equipment Incorporated Semiconductor device for automation of integrated photoarray characterization
US4811072A (en) * 1982-09-24 1989-03-07 Risberg Robert L Semiconductor device
KR930003555B1 (ko) * 1988-12-16 1993-05-06 산켄 덴끼 가부시끼가이샤 반도체 장치의 제조방법
US5243205A (en) * 1989-10-16 1993-09-07 Kabushiki Kaisha Toshiba Semiconductor device with overvoltage protective function
US5210601A (en) * 1989-10-31 1993-05-11 Kabushiki Kaisha Toshiba Compression contacted semiconductor device and method for making of the same
JPH0417372A (ja) * 1990-05-11 1992-01-22 Hitachi Ltd 半導体装置
FR2664744B1 (fr) * 1990-07-16 1993-08-06 Sgs Thomson Microelectronics Diode pin a faible surtension initiale.
DE4135258C2 (de) * 1991-10-25 1996-05-02 Semikron Elektronik Gmbh Schnelle Leistungsdiode
US5360990A (en) * 1993-03-29 1994-11-01 Sunpower Corporation P/N junction device having porous emitter
JPH07297414A (ja) * 1994-04-25 1995-11-10 Toshiba Corp 半導体装置とその製造方法
DE69430913D1 (de) * 1994-07-25 2002-08-08 Cons Ric Microelettronica Verfahren zur lokalen Reduzierung der Ladungsträgerlebensdauer
JPH0936388A (ja) 1995-07-20 1997-02-07 Mitsubishi Electric Corp 半導体装置
US5747371A (en) * 1996-07-22 1998-05-05 Motorola, Inc. Method of manufacturing vertical MOSFET
JP3435166B2 (ja) * 1997-08-14 2003-08-11 三菱電機株式会社 半導体装置
JP4653273B2 (ja) 1999-11-05 2011-03-16 富士電機システムズ株式会社 半導体装置、および、その製造方法
US6627961B1 (en) * 2000-05-05 2003-09-30 International Rectifier Corporation Hybrid IGBT and MOSFET for zero current at zero voltage

Also Published As

Publication number Publication date
EP1098371A3 (de) 2003-06-25
DE60028157T2 (de) 2006-09-28
EP1098371B1 (de) 2006-05-24
EP1098371A2 (de) 2001-05-09
JP4653273B2 (ja) 2011-03-16
JP2001135831A (ja) 2001-05-18
US6870199B1 (en) 2005-03-22

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Legal Events

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8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8327 Change in the person/name/address of the patent owner

Owner name: FUJI ELECTRIC SYSTEMS CO., LTD., TOKYO/TOKIO, JP