DE60026071T8 - Abstimmbare laserquelle mit integriertem optischen verstärker - Google Patents
Abstimmbare laserquelle mit integriertem optischen verstärker Download PDFInfo
- Publication number
- DE60026071T8 DE60026071T8 DE60026071T DE60026071T DE60026071T8 DE 60026071 T8 DE60026071 T8 DE 60026071T8 DE 60026071 T DE60026071 T DE 60026071T DE 60026071 T DE60026071 T DE 60026071T DE 60026071 T8 DE60026071 T8 DE 60026071T8
- Authority
- DE
- Germany
- Prior art keywords
- electrical signal
- laser
- wavelength
- optical amplifier
- laser source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003287 optical effect Effects 0.000 title abstract 4
- 230000001143 conditioned effect Effects 0.000 abstract 3
Classifications
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- C—CHEMISTRY; METALLURGY
- C40—COMBINATORIAL TECHNOLOGY
- C40B—COMBINATORIAL CHEMISTRY; LIBRARIES, e.g. CHEMICAL LIBRARIES
- C40B30/00—Methods of screening libraries
- C40B30/04—Methods of screening libraries by measuring the ability to specifically bind a target molecule, e.g. antibody-antigen binding, receptor-ligand binding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
- G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
- G01N33/68—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing involving proteins, peptides or amino acids
- G01N33/6803—General methods of protein analysis not limited to specific proteins or families of proteins
- G01N33/6845—Methods of identifying protein-protein interactions in protein mixtures
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/29—Repeaters
- H04B10/291—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form
- H04B10/2912—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form characterised by the medium used for amplification or processing
- H04B10/2914—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form characterised by the medium used for amplification or processing using lumped semiconductor optical amplifiers [SOA]
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2500/00—Screening for compounds of potential therapeutic value
- G01N2500/10—Screening for compounds of potential therapeutic value involving cells
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/16—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 series; tandem
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0427—Electrical excitation ; Circuits therefor for applying modulation to the laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06251—Amplitude modulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06253—Pulse modulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1209—Sampled grating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
- H01S5/1243—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts by other means than a jump in the grating period, e.g. bent waveguides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
- H01S5/3414—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers by vacancy induced interdiffusion
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H01S5/5009—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive
- H01S5/5018—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive using two or more amplifiers or multiple passes through the same amplifier
Landscapes
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Molecular Biology (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Immunology (AREA)
- Electromagnetism (AREA)
- Organic Chemistry (AREA)
- Medicinal Chemistry (AREA)
- Biophysics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Biochemistry (AREA)
- Nonlinear Science (AREA)
- Nanotechnology (AREA)
- General Health & Medical Sciences (AREA)
- Urology & Nephrology (AREA)
- Hematology (AREA)
- Biomedical Technology (AREA)
- Cell Biology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Proteomics, Peptides & Aminoacids (AREA)
- Microbiology (AREA)
- Bioinformatics & Computational Biology (AREA)
- Food Science & Technology (AREA)
- Analytical Chemistry (AREA)
- Bioinformatics & Cheminformatics (AREA)
- Pathology (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Biotechnology (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Semiconductor Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Lasers (AREA)
- Light Receiving Elements (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (25)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US614895 | 1990-11-16 | ||
US614377 | 1996-03-12 | ||
US15207299P | 1999-09-02 | 1999-09-02 | |
US15204999P | 1999-09-02 | 1999-09-02 | |
US15203899P | 1999-09-02 | 1999-09-02 | |
US152049P | 1999-09-02 | ||
US152038P | 1999-09-02 | ||
US152072P | 1999-09-02 | ||
US61486500A | 2000-07-12 | 2000-07-12 | |
US09/614,376 US6614819B1 (en) | 1999-09-02 | 2000-07-12 | Method of modulating an optical wavelength with an opto-electronic laser with integrated modulator |
US09/614,377 US6580739B1 (en) | 1999-09-02 | 2000-07-12 | Integrated opto-electronic wavelength converter assembly |
US614224 | 2000-07-12 | ||
US614378 | 2000-07-12 | ||
US09/614,224 US6654400B1 (en) | 1999-09-02 | 2000-07-12 | Method of making a tunable laser source with integrated optical amplifier |
US09/614,378 US6628690B1 (en) | 1999-09-02 | 2000-07-12 | Opto-electronic laser with integrated modulator |
US614674 | 2000-07-12 | ||
US614375 | 2000-07-12 | ||
US09/614,375 US6658035B1 (en) | 1999-09-02 | 2000-07-12 | Tunable laser source with integrated optical amplifier |
US614195 | 2000-07-12 | ||
US614865 | 2000-07-12 | ||
US09/614,195 US6574259B1 (en) | 1999-09-02 | 2000-07-12 | Method of making an opto-electronic laser with integrated modulator |
US614376 | 2000-07-12 | ||
US09/614,674 US6624000B1 (en) | 1999-09-02 | 2000-07-12 | Method for making a monolithic wavelength converter assembly |
US09/614,895 US6349106B1 (en) | 1999-09-02 | 2000-07-12 | Method for converting an optical wavelength using a monolithic wavelength converter assembly |
PCT/US2000/022816 WO2001017076A2 (en) | 1999-09-02 | 2000-08-18 | Tunable laser source with integrated optical amplifier |
Publications (3)
Publication Number | Publication Date |
---|---|
DE60026071D1 DE60026071D1 (de) | 2006-04-20 |
DE60026071T2 DE60026071T2 (de) | 2006-08-31 |
DE60026071T8 true DE60026071T8 (de) | 2007-06-14 |
Family
ID=27583770
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60026071T Active DE60026071T8 (de) | 1999-09-02 | 2000-08-18 | Abstimmbare laserquelle mit integriertem optischen verstärker |
DE60026367T Expired - Fee Related DE60026367T8 (de) | 1999-09-02 | 2000-08-18 | Integrierter opto-elektronischer wellenlängenwandler |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60026367T Expired - Fee Related DE60026367T8 (de) | 1999-09-02 | 2000-08-18 | Integrierter opto-elektronischer wellenlängenwandler |
Country Status (8)
Country | Link |
---|---|
US (1) | US6349106B1 (de) |
EP (3) | EP1210755B1 (de) |
JP (1) | JP4477273B2 (de) |
AT (3) | ATE308810T1 (de) |
AU (2) | AU2246401A (de) |
CA (3) | CA2391974A1 (de) |
DE (2) | DE60026071T8 (de) |
WO (2) | WO2001016642A2 (de) |
Families Citing this family (60)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7095770B2 (en) | 2001-12-20 | 2006-08-22 | Finisar Corporation | Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region |
US7058112B2 (en) | 2001-12-27 | 2006-06-06 | Finisar Corporation | Indium free vertical cavity surface emitting laser |
US6922426B2 (en) | 2001-12-20 | 2005-07-26 | Finisar Corporation | Vertical cavity surface emitting laser including indium in the active region |
US6658035B1 (en) * | 1999-09-02 | 2003-12-02 | Agility Communications, Inc. | Tunable laser source with integrated optical amplifier |
US6628690B1 (en) * | 1999-09-02 | 2003-09-30 | Agility Communications, Inc. | Opto-electronic laser with integrated modulator |
US6614819B1 (en) * | 1999-09-02 | 2003-09-02 | Agility Communications, Inc. | Method of modulating an optical wavelength with an opto-electronic laser with integrated modulator |
US6654400B1 (en) * | 1999-09-02 | 2003-11-25 | Agility Communications, Inc. | Method of making a tunable laser source with integrated optical amplifier |
JP2001272703A (ja) * | 2000-03-24 | 2001-10-05 | Fujitsu Ltd | 波長変換装置及び波長変換方法 |
CN1240167C (zh) * | 2000-05-04 | 2006-02-01 | 艾吉利提通信公司 | 用于取样光栅分布型布拉格反射激光器的改进反射镜和腔 |
US6690693B1 (en) * | 2000-05-04 | 2004-02-10 | Agility Communications, Inc. | Power and wavelength control of sampled grating distributed Bragg reflector lasers |
US7061943B2 (en) * | 2000-06-29 | 2006-06-13 | Agility Communications, Inc. | Controller calibration for small form factor sampled grating distributed Bragg reflector laser |
US6661938B2 (en) * | 2000-09-25 | 2003-12-09 | Massachusetts Institute Of Technology | Optical micro-cavity sensors |
FR2821495B1 (fr) * | 2001-02-23 | 2004-08-27 | Cit Alcatel | Laser accordable de facon rapide et large |
US6950233B1 (en) * | 2001-03-09 | 2005-09-27 | Finisar Corporation | System and method for wavelength conversion using a VLSOA |
GB2377814A (en) * | 2001-03-19 | 2003-01-22 | Marconi Applied Techn Ltd | Optical amplifier with tunable pump laser |
US6954476B2 (en) * | 2001-05-15 | 2005-10-11 | Agility Communications, Inc. | Sampled grating distributed Bragg reflector laser controller |
US6853479B1 (en) * | 2001-08-30 | 2005-02-08 | Oewaves, Inc. | Apparatus and method for coupling light between an optical resonator and a semiconductor chip with a minimum number of components and alignment steps |
US6665457B2 (en) * | 2001-09-10 | 2003-12-16 | Altitun Ab | Tunable electro-absorption modulator and tunable laser |
US7653093B2 (en) * | 2001-09-10 | 2010-01-26 | Imec | Widely tunable twin guide laser structure |
WO2003032547A2 (en) | 2001-10-09 | 2003-04-17 | Infinera Corporation | Transmitter photonic integrated circuit |
US7116851B2 (en) | 2001-10-09 | 2006-10-03 | Infinera Corporation | Optical signal receiver, an associated photonic integrated circuit (RxPIC), and method improving performance |
WO2003032021A2 (en) | 2001-10-09 | 2003-04-17 | Infinera Corporation | TRANSMITTER PHOTONIC INTEGRATED CIRCUITS (TxPIC) AND OPTICAL TRANSPORT NETWORKS EMPLOYING TxPICs |
GB0124217D0 (en) * | 2001-10-09 | 2001-11-28 | Denselight Semiconductors Pte | Two-section distributed bragg reflector laser |
US6819466B2 (en) * | 2001-12-26 | 2004-11-16 | Coretek Inc. | Asymmetric fabry-perot modulator with a micromechanical phase compensating cavity |
US6822995B2 (en) | 2002-02-21 | 2004-11-23 | Finisar Corporation | GaAs/AI(Ga)As distributed bragg reflector on InP |
US6873763B2 (en) * | 2002-04-12 | 2005-03-29 | Intel Corporation | Managing channels with different wavelengths in optical networks |
US7035305B2 (en) * | 2002-05-10 | 2006-04-25 | Bookham Technology, Plc | Monolithically integrated high power laser optical device |
EP1387451A1 (de) * | 2002-07-31 | 2004-02-04 | Corning Incorporated | Optische Kommunikationsgeräte und ihre Bertriebsweise |
JP3815453B2 (ja) * | 2003-03-27 | 2006-08-30 | Kddi株式会社 | 光信号処理装置及び方法 |
US7043097B2 (en) * | 2003-07-25 | 2006-05-09 | Agility Communications, Inc. | Traveling-wave optoelectronic wavelength converter |
US7633988B2 (en) * | 2003-07-31 | 2009-12-15 | Jds Uniphase Corporation | Tunable laser source with monolithically integrated interferometric optical modulator |
US7373031B2 (en) * | 2004-09-30 | 2008-05-13 | Intel Corporation | Apparatus for an electro-optical device connection |
US7860137B2 (en) | 2004-10-01 | 2010-12-28 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
CA2581614A1 (en) | 2004-10-01 | 2006-04-13 | Finisar Corporation | Vertical cavity surface emitting laser having multiple top-side contacts |
JP4857777B2 (ja) * | 2006-01-18 | 2012-01-18 | 富士通株式会社 | 光半導体素子及びその製造方法 |
JP2009094410A (ja) * | 2007-10-11 | 2009-04-30 | Nippon Telegr & Teleph Corp <Ntt> | 半導体光集積素子及びその作製方法 |
JP5109931B2 (ja) * | 2008-10-31 | 2012-12-26 | 日本電気株式会社 | 半導体光集積素子および半導体光集積素子の製造方法 |
DE102008056096B4 (de) * | 2008-11-04 | 2016-09-29 | Forschungsverbund Berlin E.V. | Verfahren zur selektiven Transmission eines optischen Signals |
DE102012209485B4 (de) | 2012-06-05 | 2015-10-22 | Forschungsverbund Berlin E.V. | Vorrichtung und Verfahren zur Selektion von optischen Pulsen |
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2000
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- 2000-08-18 AT AT00986179T patent/ATE308810T1/de not_active IP Right Cessation
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- 2000-08-18 JP JP2001527409A patent/JP4477273B2/ja not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
---|---|
CA2384049A1 (en) | 2001-03-08 |
ATE308810T1 (de) | 2005-11-15 |
WO2001024328A9 (en) | 2002-09-19 |
WO2001024328A3 (en) | 2001-10-25 |
EP1210754B1 (de) | 2005-11-02 |
EP1210755B1 (de) | 2006-03-01 |
EP1210753B1 (de) | 2006-02-15 |
DE60026367T2 (de) | 2006-11-02 |
AU2246401A (en) | 2001-03-26 |
CA2384033A1 (en) | 2001-03-08 |
WO2001016642A9 (en) | 2002-09-06 |
JP2003513297A (ja) | 2003-04-08 |
WO2001016642A2 (en) | 2001-03-08 |
CA2391974A1 (en) | 2001-04-05 |
DE60026367D1 (de) | 2006-04-27 |
US6349106B1 (en) | 2002-02-19 |
JP4477273B2 (ja) | 2010-06-09 |
WO2001016642A3 (en) | 2001-10-25 |
DE60026071T2 (de) | 2006-08-31 |
EP1210755A2 (de) | 2002-06-05 |
ATE318015T1 (de) | 2006-03-15 |
EP1210753A2 (de) | 2002-06-05 |
DE60026071D1 (de) | 2006-04-20 |
EP1210754A2 (de) | 2002-06-05 |
ATE319206T1 (de) | 2006-03-15 |
AU2246301A (en) | 2001-03-26 |
WO2001024328A2 (en) | 2001-04-05 |
DE60026367T8 (de) | 2007-06-21 |
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