DE60026367D1 - Integrierter opto-elektronischer wellenlängenwandler - Google Patents
Integrierter opto-elektronischer wellenlängenwandlerInfo
- Publication number
- DE60026367D1 DE60026367D1 DE60026367T DE60026367T DE60026367D1 DE 60026367 D1 DE60026367 D1 DE 60026367D1 DE 60026367 T DE60026367 T DE 60026367T DE 60026367 T DE60026367 T DE 60026367T DE 60026367 D1 DE60026367 D1 DE 60026367D1
- Authority
- DE
- Germany
- Prior art keywords
- electrical signal
- laser
- wavelength
- wave length
- conditioned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005693 optoelectronics Effects 0.000 title 1
- 230000001143 conditioned effect Effects 0.000 abstract 3
- 230000003287 optical effect Effects 0.000 abstract 3
Classifications
-
- C—CHEMISTRY; METALLURGY
- C40—COMBINATORIAL TECHNOLOGY
- C40B—COMBINATORIAL CHEMISTRY; LIBRARIES, e.g. CHEMICAL LIBRARIES
- C40B30/00—Methods of screening libraries
- C40B30/04—Methods of screening libraries by measuring the ability to specifically bind a target molecule, e.g. antibody-antigen binding, receptor-ligand binding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
- G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
- G01N33/68—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing involving proteins, peptides or amino acids
- G01N33/6803—General methods of protein analysis not limited to specific proteins or families of proteins
- G01N33/6845—Methods of identifying protein-protein interactions in protein mixtures
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/29—Repeaters
- H04B10/291—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form
- H04B10/2912—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form characterised by the medium used for amplification or processing
- H04B10/2914—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form characterised by the medium used for amplification or processing using lumped semiconductor optical amplifiers [SOA]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2500/00—Screening for compounds of potential therapeutic value
- G01N2500/10—Screening for compounds of potential therapeutic value involving cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/16—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 series; tandem
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0427—Electrical excitation ; Circuits therefor for applying modulation to the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06251—Amplitude modulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06253—Pulse modulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1209—Sampled grating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
- H01S5/1243—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts by other means than a jump in the grating period, e.g. bent waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
- H01S5/3414—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers by vacancy induced interdiffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H01S5/5009—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive
- H01S5/5018—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive using two or more amplifiers or multiple passes through the same amplifier
Landscapes
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Molecular Biology (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Immunology (AREA)
- Urology & Nephrology (AREA)
- General Health & Medical Sciences (AREA)
- Nanotechnology (AREA)
- Organic Chemistry (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Biomedical Technology (AREA)
- Biochemistry (AREA)
- Medicinal Chemistry (AREA)
- Hematology (AREA)
- Biophysics (AREA)
- General Chemical & Material Sciences (AREA)
- Computer Networks & Wireless Communication (AREA)
- Microbiology (AREA)
- Cell Biology (AREA)
- Analytical Chemistry (AREA)
- Biotechnology (AREA)
- Proteomics, Peptides & Aminoacids (AREA)
- Pathology (AREA)
- Bioinformatics & Computational Biology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Food Science & Technology (AREA)
- Bioinformatics & Cheminformatics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Signal Processing (AREA)
- Semiconductor Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Light Receiving Elements (AREA)
- Lasers (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (25)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15207299P | 1999-09-02 | 1999-09-02 | |
US15203899P | 1999-09-02 | 1999-09-02 | |
US15204999P | 1999-09-02 | 1999-09-02 | |
US152038P | 1999-09-02 | ||
US152049P | 1999-09-02 | ||
US152072P | 1999-09-02 | ||
US61486500A | 2000-07-12 | 2000-07-12 | |
US614378 | 2000-07-12 | ||
US09/614,674 US6624000B1 (en) | 1999-09-02 | 2000-07-12 | Method for making a monolithic wavelength converter assembly |
US614865 | 2000-07-12 | ||
US09/614,376 US6614819B1 (en) | 1999-09-02 | 2000-07-12 | Method of modulating an optical wavelength with an opto-electronic laser with integrated modulator |
US09/614,375 US6658035B1 (en) | 1999-09-02 | 2000-07-12 | Tunable laser source with integrated optical amplifier |
US614375 | 2000-07-12 | ||
US614376 | 2000-07-12 | ||
US614895 | 2000-07-12 | ||
US09/614,378 US6628690B1 (en) | 1999-09-02 | 2000-07-12 | Opto-electronic laser with integrated modulator |
US09/614,895 US6349106B1 (en) | 1999-09-02 | 2000-07-12 | Method for converting an optical wavelength using a monolithic wavelength converter assembly |
US09/614,224 US6654400B1 (en) | 1999-09-02 | 2000-07-12 | Method of making a tunable laser source with integrated optical amplifier |
US614377 | 2000-07-12 | ||
US09/614,195 US6574259B1 (en) | 1999-09-02 | 2000-07-12 | Method of making an opto-electronic laser with integrated modulator |
US614674 | 2000-07-12 | ||
US614195 | 2000-07-12 | ||
US614224 | 2000-07-12 | ||
US09/614,377 US6580739B1 (en) | 1999-09-02 | 2000-07-12 | Integrated opto-electronic wavelength converter assembly |
PCT/US2000/022831 WO2001016642A2 (en) | 1999-09-02 | 2000-08-18 | Integrated opto-electronic wavelength converter assembly |
Publications (3)
Publication Number | Publication Date |
---|---|
DE60026367D1 true DE60026367D1 (de) | 2006-04-27 |
DE60026367T2 DE60026367T2 (de) | 2006-11-02 |
DE60026367T8 DE60026367T8 (de) | 2007-06-21 |
Family
ID=27583770
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60026367T Expired - Fee Related DE60026367T8 (de) | 1999-09-02 | 2000-08-18 | Integrierter opto-elektronischer wellenlängenwandler |
DE60026071T Active DE60026071T8 (de) | 1999-09-02 | 2000-08-18 | Abstimmbare laserquelle mit integriertem optischen verstärker |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60026071T Active DE60026071T8 (de) | 1999-09-02 | 2000-08-18 | Abstimmbare laserquelle mit integriertem optischen verstärker |
Country Status (8)
Country | Link |
---|---|
US (1) | US6349106B1 (de) |
EP (3) | EP1210753B1 (de) |
JP (1) | JP4477273B2 (de) |
AT (3) | ATE308810T1 (de) |
AU (2) | AU2246401A (de) |
CA (3) | CA2391974A1 (de) |
DE (2) | DE60026367T8 (de) |
WO (2) | WO2001016642A2 (de) |
Families Citing this family (60)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6922426B2 (en) | 2001-12-20 | 2005-07-26 | Finisar Corporation | Vertical cavity surface emitting laser including indium in the active region |
US7095770B2 (en) | 2001-12-20 | 2006-08-22 | Finisar Corporation | Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region |
US7058112B2 (en) | 2001-12-27 | 2006-06-06 | Finisar Corporation | Indium free vertical cavity surface emitting laser |
US6654400B1 (en) * | 1999-09-02 | 2003-11-25 | Agility Communications, Inc. | Method of making a tunable laser source with integrated optical amplifier |
US6658035B1 (en) * | 1999-09-02 | 2003-12-02 | Agility Communications, Inc. | Tunable laser source with integrated optical amplifier |
US6628690B1 (en) * | 1999-09-02 | 2003-09-30 | Agility Communications, Inc. | Opto-electronic laser with integrated modulator |
US6614819B1 (en) * | 1999-09-02 | 2003-09-02 | Agility Communications, Inc. | Method of modulating an optical wavelength with an opto-electronic laser with integrated modulator |
JP2001272703A (ja) * | 2000-03-24 | 2001-10-05 | Fujitsu Ltd | 波長変換装置及び波長変換方法 |
US6690693B1 (en) * | 2000-05-04 | 2004-02-10 | Agility Communications, Inc. | Power and wavelength control of sampled grating distributed Bragg reflector lasers |
WO2001084682A2 (en) * | 2000-05-04 | 2001-11-08 | Agility Communications, Inc. | Improved mirror and cavity designs for sampled-grating distributed bragg reflector lasers |
US7061943B2 (en) * | 2000-06-29 | 2006-06-13 | Agility Communications, Inc. | Controller calibration for small form factor sampled grating distributed Bragg reflector laser |
US6661938B2 (en) * | 2000-09-25 | 2003-12-09 | Massachusetts Institute Of Technology | Optical micro-cavity sensors |
FR2821495B1 (fr) * | 2001-02-23 | 2004-08-27 | Cit Alcatel | Laser accordable de facon rapide et large |
US6950233B1 (en) * | 2001-03-09 | 2005-09-27 | Finisar Corporation | System and method for wavelength conversion using a VLSOA |
GB2377814A (en) * | 2001-03-19 | 2003-01-22 | Marconi Applied Techn Ltd | Optical amplifier with tunable pump laser |
WO2002093695A2 (en) * | 2001-05-15 | 2002-11-21 | Agility Communications, Inc. | Sampled grating distributed bragg reflector laser controller |
US6853479B1 (en) * | 2001-08-30 | 2005-02-08 | Oewaves, Inc. | Apparatus and method for coupling light between an optical resonator and a semiconductor chip with a minimum number of components and alignment steps |
US6665457B2 (en) * | 2001-09-10 | 2003-12-16 | Altitun Ab | Tunable electro-absorption modulator and tunable laser |
US7653093B2 (en) * | 2001-09-10 | 2010-01-26 | Imec | Widely tunable twin guide laser structure |
US7116851B2 (en) | 2001-10-09 | 2006-10-03 | Infinera Corporation | Optical signal receiver, an associated photonic integrated circuit (RxPIC), and method improving performance |
EP1436870A2 (de) | 2001-10-09 | 2004-07-14 | Infinera Corporation | Integrierte fotonische sendschaltung und optisches netzwerk damit |
DE60224234T2 (de) | 2001-10-09 | 2008-05-08 | Infinera Corp., Sunnyvale | Digitale optische Netzwerkarchitektur |
GB0124217D0 (en) * | 2001-10-09 | 2001-11-28 | Denselight Semiconductors Pte | Two-section distributed bragg reflector laser |
US6819466B2 (en) * | 2001-12-26 | 2004-11-16 | Coretek Inc. | Asymmetric fabry-perot modulator with a micromechanical phase compensating cavity |
US6822995B2 (en) | 2002-02-21 | 2004-11-23 | Finisar Corporation | GaAs/AI(Ga)As distributed bragg reflector on InP |
US6873763B2 (en) * | 2002-04-12 | 2005-03-29 | Intel Corporation | Managing channels with different wavelengths in optical networks |
US7035305B2 (en) | 2002-05-10 | 2006-04-25 | Bookham Technology, Plc | Monolithically integrated high power laser optical device |
EP1387451A1 (de) * | 2002-07-31 | 2004-02-04 | Corning Incorporated | Optische Kommunikationsgeräte und ihre Bertriebsweise |
JP3815453B2 (ja) * | 2003-03-27 | 2006-08-30 | Kddi株式会社 | 光信号処理装置及び方法 |
US7043097B2 (en) * | 2003-07-25 | 2006-05-09 | Agility Communications, Inc. | Traveling-wave optoelectronic wavelength converter |
US7633988B2 (en) * | 2003-07-31 | 2009-12-15 | Jds Uniphase Corporation | Tunable laser source with monolithically integrated interferometric optical modulator |
US7373031B2 (en) * | 2004-09-30 | 2008-05-13 | Intel Corporation | Apparatus for an electro-optical device connection |
CA2581614A1 (en) | 2004-10-01 | 2006-04-13 | Finisar Corporation | Vertical cavity surface emitting laser having multiple top-side contacts |
US7860137B2 (en) | 2004-10-01 | 2010-12-28 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
JP4857777B2 (ja) * | 2006-01-18 | 2012-01-18 | 富士通株式会社 | 光半導体素子及びその製造方法 |
JP2009094410A (ja) * | 2007-10-11 | 2009-04-30 | Nippon Telegr & Teleph Corp <Ntt> | 半導体光集積素子及びその作製方法 |
JP5109931B2 (ja) * | 2008-10-31 | 2012-12-26 | 日本電気株式会社 | 半導体光集積素子および半導体光集積素子の製造方法 |
DE102008056096B4 (de) * | 2008-11-04 | 2016-09-29 | Forschungsverbund Berlin E.V. | Verfahren zur selektiven Transmission eines optischen Signals |
DE102012209485B4 (de) | 2012-06-05 | 2015-10-22 | Forschungsverbund Berlin E.V. | Vorrichtung und Verfahren zur Selektion von optischen Pulsen |
JP6064530B2 (ja) * | 2012-11-08 | 2017-01-25 | 住友電気工業株式会社 | 発光モジュール及び光トランシーバ |
US9362428B2 (en) | 2012-11-27 | 2016-06-07 | Artilux, Inc. | Photonic lock based high bandwidth photodetector |
US10916669B2 (en) * | 2012-12-10 | 2021-02-09 | Artilux, Inc. | Photonic lock based high bandwidth photodetector |
US10388806B2 (en) | 2012-12-10 | 2019-08-20 | Artilux, Inc. | Photonic lock based high bandwidth photodetector |
GB2523383B (en) * | 2014-02-24 | 2016-09-14 | Rockley Photonics Ltd | Detector remodulator |
GB2564158B (en) | 2017-07-05 | 2019-12-18 | Rockley Photonics Ltd | Optoelectronic device |
EP3111261A2 (de) * | 2014-02-24 | 2017-01-04 | Rockley Photonics Limited | Detektorremodulator und optoelektronischer schalter |
US10222677B2 (en) | 2014-02-24 | 2019-03-05 | Rockley Photonics Limited | Optoelectronic device |
US10928659B2 (en) | 2014-02-24 | 2021-02-23 | Rockley Photonics Limited | Optoelectronic device |
US10678115B2 (en) | 2015-03-05 | 2020-06-09 | Rockley Photonics Limited | Waveguide modulator structures |
US10216059B2 (en) | 2015-03-05 | 2019-02-26 | Rockley Photonics Limited | Waveguide modulator structures |
CN107533248A (zh) | 2015-03-05 | 2018-01-02 | 洛克利光子有限公司 | 波导调制器结构 |
US10921616B2 (en) | 2016-11-23 | 2021-02-16 | Rockley Photonics Limited | Optoelectronic device |
US11150494B2 (en) | 2015-03-05 | 2021-10-19 | Rockley Photonics Limited | Waveguide modulator structures |
US10644187B2 (en) | 2015-07-24 | 2020-05-05 | Artilux, Inc. | Multi-wafer based light absorption apparatus and applications thereof |
JP2018060974A (ja) * | 2016-10-07 | 2018-04-12 | 日本電信電話株式会社 | 半導体光集積素子 |
US11101256B2 (en) | 2016-11-23 | 2021-08-24 | Rockley Photonics Limited | Optical modulators |
CN110291450B (zh) | 2016-12-02 | 2023-05-23 | 洛克利光子有限公司 | 波导装置和掺杂波导装置的方法 |
CN110325900B (zh) | 2016-12-02 | 2023-11-17 | 洛克利光子有限公司 | 波导光电器件 |
US20230268713A1 (en) | 2020-07-02 | 2023-08-24 | Nippon Telegraph And Telephone Corporation | Optical Signal Transmitter |
CN112882311A (zh) * | 2021-03-29 | 2021-06-01 | 国网江苏省电力有限公司无锡供电分公司 | 一种基于soa的全光波长转换控制器及控制方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5088105A (en) | 1991-03-26 | 1992-02-11 | Spectra Diode Laboratories, Inc. | Optical amplifier with folded light path and laser-amplifier combination |
US5625636A (en) | 1991-10-11 | 1997-04-29 | Bryan; Robert P. | Integration of photoactive and electroactive components with vertical cavity surface emitting lasers |
EP0620475B1 (de) | 1993-03-15 | 1998-12-30 | Canon Kabushiki Kaisha | Optische Vorrichtungen und optische Übertragungssystemen die diese verwenden |
US5715268A (en) | 1994-01-24 | 1998-02-03 | Sdl, Inc. | Laser amplifiers with suppressed self oscillation |
FR2715770B1 (fr) | 1994-01-31 | 1996-07-12 | France Telecom | Procédé pour la réalisation d'un composant électro-optique et/ou photonique. |
US5479539A (en) | 1994-06-15 | 1995-12-26 | Texas Instruments Incorporated | Integrated optical transmitter and receiver |
US5742045A (en) | 1994-10-26 | 1998-04-21 | The United States Of America As Represented By The Secretary Of The Air Force | Apparatus using diode laser logic to form a configurable optical gate system |
US5535231A (en) | 1994-11-08 | 1996-07-09 | Samsung Electronics Co., Ltd. | Optoelectronic circuit including heterojunction bipolar transistor laser and photodetector |
EP1539028A2 (de) | 2002-07-08 | 2005-06-15 | Ossur Engineering Inc. | Sockelauskleidung mit sensoren zur überwachung des fortschritts von amputierten |
-
2000
- 2000-07-12 US US09/614,895 patent/US6349106B1/en not_active Expired - Fee Related
- 2000-08-18 WO PCT/US2000/022831 patent/WO2001016642A2/en active IP Right Grant
- 2000-08-18 AT AT00986179T patent/ATE308810T1/de not_active IP Right Cessation
- 2000-08-18 AU AU22464/01A patent/AU2246401A/en not_active Abandoned
- 2000-08-18 AU AU22463/01A patent/AU2246301A/en not_active Abandoned
- 2000-08-18 CA CA002391974A patent/CA2391974A1/en not_active Abandoned
- 2000-08-18 AT AT00986182T patent/ATE319206T1/de not_active IP Right Cessation
- 2000-08-18 AT AT00986181T patent/ATE318015T1/de not_active IP Right Cessation
- 2000-08-18 DE DE60026367T patent/DE60026367T8/de not_active Expired - Fee Related
- 2000-08-18 EP EP00986181A patent/EP1210753B1/de not_active Expired - Lifetime
- 2000-08-18 JP JP2001527409A patent/JP4477273B2/ja not_active Expired - Lifetime
- 2000-08-18 EP EP00986179A patent/EP1210754B1/de not_active Expired - Lifetime
- 2000-08-18 DE DE60026071T patent/DE60026071T8/de active Active
- 2000-08-18 EP EP00986182A patent/EP1210755B1/de not_active Expired - Lifetime
- 2000-08-18 WO PCT/US2000/022771 patent/WO2001024328A2/en active IP Right Grant
- 2000-08-18 CA CA002384049A patent/CA2384049A1/en not_active Abandoned
- 2000-08-18 CA CA002384033A patent/CA2384033A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CA2391974A1 (en) | 2001-04-05 |
AU2246301A (en) | 2001-03-26 |
US6349106B1 (en) | 2002-02-19 |
EP1210753A2 (de) | 2002-06-05 |
WO2001024328A9 (en) | 2002-09-19 |
WO2001016642A2 (en) | 2001-03-08 |
EP1210755A2 (de) | 2002-06-05 |
DE60026367T2 (de) | 2006-11-02 |
EP1210754B1 (de) | 2005-11-02 |
WO2001016642A9 (en) | 2002-09-06 |
CA2384033A1 (en) | 2001-03-08 |
WO2001016642A3 (en) | 2001-10-25 |
WO2001024328A2 (en) | 2001-04-05 |
DE60026071T8 (de) | 2007-06-14 |
DE60026071D1 (de) | 2006-04-20 |
EP1210754A2 (de) | 2002-06-05 |
EP1210753B1 (de) | 2006-02-15 |
EP1210755B1 (de) | 2006-03-01 |
DE60026367T8 (de) | 2007-06-21 |
AU2246401A (en) | 2001-03-26 |
ATE319206T1 (de) | 2006-03-15 |
WO2001024328A3 (en) | 2001-10-25 |
JP4477273B2 (ja) | 2010-06-09 |
JP2003513297A (ja) | 2003-04-08 |
CA2384049A1 (en) | 2001-03-08 |
DE60026071T2 (de) | 2006-08-31 |
ATE308810T1 (de) | 2005-11-15 |
ATE318015T1 (de) | 2006-03-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60026367T8 (de) | Integrierter opto-elektronischer wellenlängenwandler | |
NO922208L (no) | Polarisasjons-uavhengig forsterker-innretning | |
Kishino et al. | Monolithic integration of laser and amplifier/detector by twin-guide structure | |
ES2040718T3 (es) | Emisor laser con un laser semiconductor y un resonador externo. | |
EP0390524A3 (de) | Optischer Wellenlängenkonverter | |
SE9302949D0 (sv) | Optisk förstärkningsanordning | |
KR950024416A (ko) | 고주파 증폭기 | |
SE9002469D0 (sv) | Intraangssteg foer optomottagare | |
SE9502960D0 (sv) | Generering av optiska högeffektpulser | |
Wada et al. | Monolithic pin/preamplifier circuit integrated on a GaAs substrate | |
SE8402056L (sv) | Anordning for att utoka dynamikomradet i en integrerande optoelektrisk mottagare | |
KR20000032475A (ko) | 광섬유 격자를 이용한 광섬유 지연 선로 필터 | |
ATE289739T1 (de) | Integrierte optischen weglenkungs- und wellenlängenkonversionsmatrix | |
JPS5846071B2 (ja) | 半導体集積装置 | |
Yurek et al. | Determining the cascade parameters of externally modulated links | |
Bessonov et al. | The optical-waveguide readout of signals in surface acoustic wave devices | |
IT1258124B (it) | Metodo per l'eliminazione della modulazione di frequenza da segnali ottici modulati in ampiezza. | |
RU95104388A (ru) | Параметрический усилитель и преобразователь длины волны электромагнитного излучения | |
JP3424103B2 (ja) | 信号変換装置 | |
Nicholson et al. | Matching structures for high speed optical communication | |
Betin et al. | Calculation of the power characteristics of a double-pass amplifier | |
CN112490829A (zh) | 一种产生GHz级白噪声电信号的方法 | |
Sung et al. | Small-signal analysis of wavelength conversion in semiconductor laser amplifiers based on gain saturation | |
Arbekov et al. | Photoelectric instrument for measuring relative energy density distribution in beams of pulse lasers | |
Luo et al. | Bistability and self-pulsation in optically pumped submillimeter lasers |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: JDS UNIPHASE CORP. (N. D. GES. D. STAATES DELA, US |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: PATENT- UND RECHTSANWAELTE KRAUS & WEISERT, 80539 |
|
8339 | Ceased/non-payment of the annual fee |