ATE319206T1 - Integrierter opto-elektronischer wellenlängenwandler - Google Patents

Integrierter opto-elektronischer wellenlängenwandler

Info

Publication number
ATE319206T1
ATE319206T1 AT00986182T AT00986182T ATE319206T1 AT E319206 T1 ATE319206 T1 AT E319206T1 AT 00986182 T AT00986182 T AT 00986182T AT 00986182 T AT00986182 T AT 00986182T AT E319206 T1 ATE319206 T1 AT E319206T1
Authority
AT
Austria
Prior art keywords
electrical signal
laser
wavelength converter
wavelength
conditioned
Prior art date
Application number
AT00986182T
Other languages
English (en)
Inventor
Larry A Coldren
Original Assignee
Agility Communications Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/614,375 external-priority patent/US6658035B1/en
Priority claimed from US09/614,376 external-priority patent/US6614819B1/en
Priority claimed from US09/614,224 external-priority patent/US6654400B1/en
Priority claimed from US09/614,674 external-priority patent/US6624000B1/en
Priority claimed from US09/614,377 external-priority patent/US6580739B1/en
Priority claimed from US09/614,195 external-priority patent/US6574259B1/en
Priority claimed from US09/614,378 external-priority patent/US6628690B1/en
Application filed by Agility Communications Inc filed Critical Agility Communications Inc
Application granted granted Critical
Publication of ATE319206T1 publication Critical patent/ATE319206T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C40—COMBINATORIAL TECHNOLOGY
    • C40B—COMBINATORIAL CHEMISTRY; LIBRARIES, e.g. CHEMICAL LIBRARIES
    • C40B30/00—Methods of screening libraries
    • C40B30/04—Methods of screening libraries by measuring the ability to specifically bind a target molecule, e.g. antibody-antigen binding, receptor-ligand binding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/68—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing involving proteins, peptides or amino acids
    • G01N33/6803—General methods of protein analysis not limited to specific proteins or families of proteins
    • G01N33/6845—Methods of identifying protein-protein interactions in protein mixtures
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/29—Repeaters
    • H04B10/291—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form
    • H04B10/2912—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form characterised by the medium used for amplification or processing
    • H04B10/2914—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form characterised by the medium used for amplification or processing using lumped semiconductor optical amplifiers [SOA]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2500/00—Screening for compounds of potential therapeutic value
    • G01N2500/10—Screening for compounds of potential therapeutic value involving cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/16—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 series; tandem
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0427—Electrical excitation ; Circuits therefor for applying modulation to the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06251—Amplitude modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06253—Pulse modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H01S5/1243—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts by other means than a jump in the grating period, e.g. bent waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
    • H01S5/3414—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers by vacancy induced interdiffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5009—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive
    • H01S5/5018—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive using two or more amplifiers or multiple passes through the same amplifier

Landscapes

  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Molecular Biology (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Immunology (AREA)
  • Biochemistry (AREA)
  • Nanotechnology (AREA)
  • Biomedical Technology (AREA)
  • Medicinal Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Hematology (AREA)
  • Urology & Nephrology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Biophysics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Food Science & Technology (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • Bioinformatics & Computational Biology (AREA)
  • Proteomics, Peptides & Aminoacids (AREA)
  • General Chemical & Material Sciences (AREA)
  • Biotechnology (AREA)
  • Cell Biology (AREA)
  • Signal Processing (AREA)
  • Microbiology (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Light Receiving Elements (AREA)
  • Lasers (AREA)
  • Optical Integrated Circuits (AREA)
AT00986182T 1999-09-02 2000-08-18 Integrierter opto-elektronischer wellenlängenwandler ATE319206T1 (de)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US15207299P 1999-09-02 1999-09-02
US15204999P 1999-09-02 1999-09-02
US15203899P 1999-09-02 1999-09-02
US61486500A 2000-07-12 2000-07-12
US09/614,375 US6658035B1 (en) 1999-09-02 2000-07-12 Tunable laser source with integrated optical amplifier
US09/614,895 US6349106B1 (en) 1999-09-02 2000-07-12 Method for converting an optical wavelength using a monolithic wavelength converter assembly
US09/614,376 US6614819B1 (en) 1999-09-02 2000-07-12 Method of modulating an optical wavelength with an opto-electronic laser with integrated modulator
US09/614,224 US6654400B1 (en) 1999-09-02 2000-07-12 Method of making a tunable laser source with integrated optical amplifier
US09/614,674 US6624000B1 (en) 1999-09-02 2000-07-12 Method for making a monolithic wavelength converter assembly
US09/614,377 US6580739B1 (en) 1999-09-02 2000-07-12 Integrated opto-electronic wavelength converter assembly
US09/614,195 US6574259B1 (en) 1999-09-02 2000-07-12 Method of making an opto-electronic laser with integrated modulator
US09/614,378 US6628690B1 (en) 1999-09-02 2000-07-12 Opto-electronic laser with integrated modulator

Publications (1)

Publication Number Publication Date
ATE319206T1 true ATE319206T1 (de) 2006-03-15

Family

ID=27583770

Family Applications (3)

Application Number Title Priority Date Filing Date
AT00986179T ATE308810T1 (de) 1999-09-02 2000-08-18 Verfahren zur umwandlung optischer wellenlängen mit einem elektro-optischen laser mit integriertem modulator
AT00986181T ATE318015T1 (de) 1999-09-02 2000-08-18 Abstimmbare laserquelle mit integriertem optischen verstärker
AT00986182T ATE319206T1 (de) 1999-09-02 2000-08-18 Integrierter opto-elektronischer wellenlängenwandler

Family Applications Before (2)

Application Number Title Priority Date Filing Date
AT00986179T ATE308810T1 (de) 1999-09-02 2000-08-18 Verfahren zur umwandlung optischer wellenlängen mit einem elektro-optischen laser mit integriertem modulator
AT00986181T ATE318015T1 (de) 1999-09-02 2000-08-18 Abstimmbare laserquelle mit integriertem optischen verstärker

Country Status (8)

Country Link
US (1) US6349106B1 (de)
EP (3) EP1210753B1 (de)
JP (1) JP4477273B2 (de)
AT (3) ATE308810T1 (de)
AU (2) AU2246301A (de)
CA (3) CA2384033A1 (de)
DE (2) DE60026071T8 (de)
WO (2) WO2001016642A2 (de)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6922426B2 (en) 2001-12-20 2005-07-26 Finisar Corporation Vertical cavity surface emitting laser including indium in the active region
US7095770B2 (en) 2001-12-20 2006-08-22 Finisar Corporation Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
US7058112B2 (en) 2001-12-27 2006-06-06 Finisar Corporation Indium free vertical cavity surface emitting laser
US6614819B1 (en) * 1999-09-02 2003-09-02 Agility Communications, Inc. Method of modulating an optical wavelength with an opto-electronic laser with integrated modulator
US6658035B1 (en) * 1999-09-02 2003-12-02 Agility Communications, Inc. Tunable laser source with integrated optical amplifier
US6628690B1 (en) * 1999-09-02 2003-09-30 Agility Communications, Inc. Opto-electronic laser with integrated modulator
US6654400B1 (en) * 1999-09-02 2003-11-25 Agility Communications, Inc. Method of making a tunable laser source with integrated optical amplifier
JP2001272703A (ja) * 2000-03-24 2001-10-05 Fujitsu Ltd 波長変換装置及び波長変換方法
US6690693B1 (en) * 2000-05-04 2004-02-10 Agility Communications, Inc. Power and wavelength control of sampled grating distributed Bragg reflector lasers
US6590924B2 (en) * 2000-05-04 2003-07-08 Agility Communications, Inc. Mirror and cavity designs for sampled grating distributed bragg reflector lasers
US7061943B2 (en) * 2000-06-29 2006-06-13 Agility Communications, Inc. Controller calibration for small form factor sampled grating distributed Bragg reflector laser
AU2001293015A1 (en) * 2000-09-25 2002-04-08 Massachusetts Institute Of Technology Optical micro-cavity sensors
FR2821495B1 (fr) * 2001-02-23 2004-08-27 Cit Alcatel Laser accordable de facon rapide et large
US6950233B1 (en) * 2001-03-09 2005-09-27 Finisar Corporation System and method for wavelength conversion using a VLSOA
GB2377814A (en) * 2001-03-19 2003-01-22 Marconi Applied Techn Ltd Optical amplifier with tunable pump laser
US6954476B2 (en) * 2001-05-15 2005-10-11 Agility Communications, Inc. Sampled grating distributed Bragg reflector laser controller
US6853479B1 (en) * 2001-08-30 2005-02-08 Oewaves, Inc. Apparatus and method for coupling light between an optical resonator and a semiconductor chip with a minimum number of components and alignment steps
US6665457B2 (en) * 2001-09-10 2003-12-16 Altitun Ab Tunable electro-absorption modulator and tunable laser
US7653093B2 (en) * 2001-09-10 2010-01-26 Imec Widely tunable twin guide laser structure
GB0124217D0 (en) * 2001-10-09 2001-11-28 Denselight Semiconductors Pte Two-section distributed bragg reflector laser
CA2463500C (en) 2001-10-09 2012-11-27 Infinera Corporation Transmitter photonic integrated circuit (txpic) chip architectures and drive systems and wavelength stabilization for txpics
AU2002334906A1 (en) 2001-10-09 2003-04-22 Infinera Corporation Transmitter photonic integrated circuits (txpic) and optical transport networks employing txpics
US7116851B2 (en) 2001-10-09 2006-10-03 Infinera Corporation Optical signal receiver, an associated photonic integrated circuit (RxPIC), and method improving performance
US6819466B2 (en) * 2001-12-26 2004-11-16 Coretek Inc. Asymmetric fabry-perot modulator with a micromechanical phase compensating cavity
US6822995B2 (en) 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
US6873763B2 (en) * 2002-04-12 2005-03-29 Intel Corporation Managing channels with different wavelengths in optical networks
US7035305B2 (en) * 2002-05-10 2006-04-25 Bookham Technology, Plc Monolithically integrated high power laser optical device
EP1387451A1 (de) * 2002-07-31 2004-02-04 Corning Incorporated Optische Kommunikationsgeräte und ihre Bertriebsweise
JP3815453B2 (ja) * 2003-03-27 2006-08-30 Ｋｄｄｉ株式会社 光信号処理装置及び方法
US7043097B2 (en) * 2003-07-25 2006-05-09 Agility Communications, Inc. Traveling-wave optoelectronic wavelength converter
US7633988B2 (en) * 2003-07-31 2009-12-15 Jds Uniphase Corporation Tunable laser source with monolithically integrated interferometric optical modulator
US7373031B2 (en) * 2004-09-30 2008-05-13 Intel Corporation Apparatus for an electro-optical device connection
WO2006039341A2 (en) 2004-10-01 2006-04-13 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
JP4857777B2 (ja) * 2006-01-18 2012-01-18 富士通株式会社 光半導体素子及びその製造方法
JP2009094410A (ja) * 2007-10-11 2009-04-30 Nippon Telegr & Teleph Corp <Ntt> 半導体光集積素子及びその作製方法
JP5109931B2 (ja) * 2008-10-31 2012-12-26 日本電気株式会社 半導体光集積素子および半導体光集積素子の製造方法
DE102008056096B4 (de) * 2008-11-04 2016-09-29 Forschungsverbund Berlin E.V. Verfahren zur selektiven Transmission eines optischen Signals
DE102012209485B4 (de) 2012-06-05 2015-10-22 Forschungsverbund Berlin E.V. Vorrichtung und Verfahren zur Selektion von optischen Pulsen
JP6064530B2 (ja) * 2012-11-08 2017-01-25 住友電気工業株式会社 発光モジュール及び光トランシーバ
US9362428B2 (en) 2012-11-27 2016-06-07 Artilux, Inc. Photonic lock based high bandwidth photodetector
US10388806B2 (en) 2012-12-10 2019-08-20 Artilux, Inc. Photonic lock based high bandwidth photodetector
US10916669B2 (en) * 2012-12-10 2021-02-09 Artilux, Inc. Photonic lock based high bandwidth photodetector
GB2564158B (en) 2017-07-05 2019-12-18 Rockley Photonics Ltd Optoelectronic device
US10928659B2 (en) 2014-02-24 2021-02-23 Rockley Photonics Limited Optoelectronic device
GB2523383B (en) * 2014-02-24 2016-09-14 Rockley Photonics Ltd Detector remodulator
US10222677B2 (en) 2014-02-24 2019-03-05 Rockley Photonics Limited Optoelectronic device
CN105917257B (zh) * 2014-02-24 2017-08-29 洛克利光子有限公司 检测器重调器和光电子交换机
US10678115B2 (en) 2015-03-05 2020-06-09 Rockley Photonics Limited Waveguide modulator structures
CN107533248A (zh) 2015-03-05 2018-01-02 洛克利光子有限公司 波导调制器结构
US10921616B2 (en) 2016-11-23 2021-02-16 Rockley Photonics Limited Optoelectronic device
US11150494B2 (en) 2015-03-05 2021-10-19 Rockley Photonics Limited Waveguide modulator structures
US10216059B2 (en) 2015-03-05 2019-02-26 Rockley Photonics Limited Waveguide modulator structures
US10644187B2 (en) 2015-07-24 2020-05-05 Artilux, Inc. Multi-wafer based light absorption apparatus and applications thereof
JP2018060974A (ja) * 2016-10-07 2018-04-12 日本電信電話株式会社 半導体光集積素子
US11101256B2 (en) 2016-11-23 2021-08-24 Rockley Photonics Limited Optical modulators
WO2018100157A1 (en) 2016-12-02 2018-06-07 Rockley Photonics Limited Waveguide optoelectronic device
US11036006B2 (en) 2016-12-02 2021-06-15 Rockley Photonics Limited Waveguide device and method of doping a waveguide device
JP7397376B2 (ja) 2020-07-02 2023-12-13 日本電信電話株式会社 光送信器
CN112882311A (zh) * 2021-03-29 2021-06-01 国网江苏省电力有限公司无锡供电分公司 一种基于soa的全光波长转换控制器及控制方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5088105A (en) 1991-03-26 1992-02-11 Spectra Diode Laboratories, Inc. Optical amplifier with folded light path and laser-amplifier combination
US5625636A (en) 1991-10-11 1997-04-29 Bryan; Robert P. Integration of photoactive and electroactive components with vertical cavity surface emitting lasers
EP0620475B1 (de) 1993-03-15 1998-12-30 Canon Kabushiki Kaisha Optische Vorrichtungen und optische Übertragungssystemen die diese verwenden
US5715268A (en) 1994-01-24 1998-02-03 Sdl, Inc. Laser amplifiers with suppressed self oscillation
FR2715770B1 (fr) 1994-01-31 1996-07-12 France Telecom Procédé pour la réalisation d'un composant électro-optique et/ou photonique.
US5479539A (en) 1994-06-15 1995-12-26 Texas Instruments Incorporated Integrated optical transmitter and receiver
US5742045A (en) 1994-10-26 1998-04-21 The United States Of America As Represented By The Secretary Of The Air Force Apparatus using diode laser logic to form a configurable optical gate system
US5535231A (en) 1994-11-08 1996-07-09 Samsung Electronics Co., Ltd. Optoelectronic circuit including heterojunction bipolar transistor laser and photodetector
WO2004004601A2 (en) 2002-07-08 2004-01-15 Össur Engineering, Inc. Socket liner incorporating sensors to monitor amputee progress

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