WO2001017076A2 - Tunable laser source with integrated optical amplifier - Google Patents

Tunable laser source with integrated optical amplifier Download PDF

Info

Publication number
WO2001017076A2
WO2001017076A2 PCT/US2000/022816 US0022816W WO0117076A2 WO 2001017076 A2 WO2001017076 A2 WO 2001017076A2 US 0022816 W US0022816 W US 0022816W WO 0117076 A2 WO0117076 A2 WO 0117076A2
Authority
WO
WIPO (PCT)
Prior art keywords
assembly
method
waveguide
amplifier
laser
Prior art date
Application number
PCT/US2000/022816
Other languages
French (fr)
Other versions
WO2001017076A9 (en
WO2001017076A3 (en
Inventor
Thomas Beck Mason
Gregory Fish
Larry Coldren
Original Assignee
Agility Communications, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US60/152,049 priority Critical
Priority to US15207299P priority
Priority to US16207299P priority
Priority to US15204999P priority
Priority to US15203899P priority
Priority to US60/152,038 priority
Priority to US60/152,072 priority
Priority to US09/614,674 priority
Priority to US61486500A priority
Priority to US09/614,674 priority patent/US6624000B1/en
Priority to US09/614,865 priority
Priority to US09/614,195 priority
Priority to US09/614,375 priority patent/US6658035B1/en
Priority to US09/614,378 priority
Priority to US09/614,376 priority
Priority to US09/614,375 priority
Priority to US09/614,195 priority patent/US6574259B1/en
Priority to US09/614,224 priority
Priority to US09/614,895 priority patent/US6349106B1/en
Priority to US09/614,376 priority patent/US6614819B1/en
Priority to US09/614,895 priority
Priority to US09/614,224 priority patent/US6654400B1/en
Priority to US09/614,377 priority patent/US6580739B1/en
Priority to US09/614,377 priority
Priority to US09/614,378 priority patent/US6628690B1/en
Application filed by Agility Communications, Inc. filed Critical Agility Communications, Inc.
Priority claimed from DE2000626071 external-priority patent/DE60026071T8/en
Priority claimed from JP2001520520A external-priority patent/JP4918203B2/en
Publication of WO2001017076A2 publication Critical patent/WO2001017076A2/en
Publication of WO2001017076A3 publication Critical patent/WO2001017076A3/en
Publication of WO2001017076A9 publication Critical patent/WO2001017076A9/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C40COMBINATORIAL TECHNOLOGY
    • C40BCOMBINATORIAL CHEMISTRY; LIBRARIES, e.g. CHEMICAL LIBRARIES, IN SILICO LIBRARIES
    • C40B30/00Methods of screening libraries
    • C40B30/04Methods of screening libraries by measuring the ability to specifically bind a target molecule, e.g. antibody-antigen binding, receptor-ligand binding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/68Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing involving proteins, peptides or amino acids
    • G01N33/6803General methods of protein analysis not limited to specific proteins or families of proteins
    • G01N33/6845Methods of identifying protein-protein interactions in protein mixtures
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2500/00Screening for compounds of potential therapeutic value
    • G01N2500/10Screening for compounds of potential therapeutic value involving cells
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • H01S5/0425Electrodes, e.g. characterised by the structure
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255Controlling the frequency of the radiation
    • H01S5/06256Controlling the frequency of the radiation with DBR-structure
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feed-back [DFB] lasers
    • H01S5/1206Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feed-back [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209Sampled grating
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feed-back [DFB] lasers
    • H01S5/1206Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feed-back [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215Multiplicity of periods
    • H01S5/1218Multiplicity of periods in superstructured configuration, e.g. more than one period in an alternate sequence
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feed-back [DFB] lasers
    • H01S5/124Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feed-back [DFB] lasers incorporating phase shifts
    • H01S5/1243Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feed-back [DFB] lasers incorporating phase shifts by other means than a jump in the grating period, e.g. bent waveguides
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/34Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers]
    • H01S5/3413Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers] comprising partially disordered wells or barriers
    • H01S5/3414Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers] comprising partially disordered wells or barriers by vacancy induced interdiffusion
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/50Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Abstract

A laser assembly includes an epitaxial structure formed on a substrate. A separately controllable tunable laser resonator and external optical amplifier are formed in the epitaxial structure. At least a portion of the laser and amplifier share a common waveguide, which may have non-uniform optical or geometrical properties along the waveguide centerline or across a normal to the centerline.

Description

TUNABLE LASER SOURCE WITH INTEGRATED OPTICAL

AMPLIFIER BACKGROUND OF THE INVENTION

Field of the Invention: This invention relates generally to laser assemblies, and more particularly to a widely tunable laser assembly with an integrated optical amplifier.

Brief Description of the Related Art:

Thin fibers of optical materials transmit light across a very broad frequency bandwidth and therefore communications data from a light source may be transmitted over such fibers over broad frequency ranges. At any particular frequency, a laser source must have high output power, narrow laser linewidth and good transmission performance through great distances of optical fiber. In higher bandwidth communications systems, where many frequencies of laser light are transmitted along a fiber, there may be one or several laser sources. While a tunable laser source would be preferred, higher data capacity systems presently use multiple laser sources operating on different frequency channels to cover the wide fiber transmission bandwidth. This is the case since appropriate laser sources are presently incapable of rapid, electronic frequency tuning without attendant deterioration of other significant figures-of-merit.

For example, at a fixed frequency, sampled grating distributed Bragg reflector (SGDBR) lasers have the high output power, narrow laser linewidth and good transmission performance necessary for an optical data network. While some SGDBR lasers can be rapidly tuned over more than 100 different transmission channels, two problems nevertheless prevent these devices from being employed in fiber optic communication systems. The most significant problem is the significant absorption of the mirror material. The resulting large cavity losses act to make the laser output power insufficient for the requirements of a present-day communications system. A second problem is that the output power and frequency tuning are dependent on each other. This coupling results in inadequate controllability for a present-day communications system.

What is needed, instead, is a device with a combination of sufficiently high output power for a high-bandwidth optical communications network and with frequency tuning controllability substantially independent of output power controllability.

SUMMARY Accordingly, an object of the present invention is to provide an integrated laser assembly that includes a tunable solid state laser and optical amplifier where all of the elements are fabricated in a common epitaxial layer structure.

Another object of the present invention is to provide an integrated laser assembly that includes a tunable solid state laser and optical amplifier with an output mode conditioned for transmission in an optical fiber. Another object of the present invention is to provide an integrated laser assembly that includes a tunable laser and optical amplifier reducing optical feedback from the amplifier to the laser.

A further object of the present invention is to provide a tunable, integrated laser assembly where laser frequency control and output power control are substantially independent.

These and other objects of the present invention are achieved in a laser assembly that includes an epitaxial structure formed on a substrate. A tunable laser resonator and a separately controllable optical amplifier are formed in the common epitaxial structure. The amplifier is positioned outside of the laser resonator cavity to receive and adjust an output received from the laser, however, at least a portion of the laser and amplifier share a common waveguide.

In different embodiments of the present invention, properties of the common waveguide such as optical properties, or centerhne curvature or cross-sectional are non-uniform along or the waveguide centerhne or non-uniform across a normal to the centerline. BRIEF DESCRIPTION OF THE FIGURES

Figure 1 A is a block diagram of a laser assembly that illustrates different functional elements of a laser assembly.

Figure IB is a cross-sectional view of one embodiment of a widely tunable laser assembly of the present invention and the integration of materials with differing optical properties by an offset quantum well technique.

Figure 2 A is a cross sectional view one embodiment of an amplifier illustrating several layer structures and the integration of two materials with differing optical properties by a selected area growth technique. Figure 2B is a cross sectional view of the Figure 2 assembly illustrating one embodiment for the integration of materials with differing optical properties by a disordered well technique.

Figure 2C is a cross sectional view one embodiment of an amplifier illustrating one embodiment for the integration of several different band gap materials by a butt j oint regro wth technique .

Figure 3 A is a cross-sectional view of one embodiment of the Figure 1 optical amplifier element where a portion of the waveguide is curved and an interface between an active and a passive section is oblique.

Figure 3B is a cross-sectional view of one embodiment of the Figure 1 optical amplifier element where the amplifier includes a plurality of gain sections.

Figure 3C is a cross-sectional view of one embodiment of the Figure 1 optical amplifier element where the amplifier includes a flared waveguide.

Figure 3D is a cross-sectional view of one embodiment of the Figure 1 optical amplifier element where the amplifier includes a waveguide mode adapter.

DETAILED DESCRIPTION Figure 1A shows a schematic of an embodiment of the invention. In Figure 1 A, laser assembly 100, waveguide 105, amplifier gain section 110, front resonator mirror 120, laser gain section 130, laser phase control section 140, back mirror 150 and electrical contact 160, epitaxial structure 170, laser 180, optical amplifier 190 and output facet 195 are shown. In Figure 1 A, laser assembly 100 comprises an integration of a laser and an optical amplifier, with the optical amplifier located external to the laser cavity. Front resonator mirror 120, laser gain section 130, laser phase control section 140, and back mirror 150 form a SGDBR-type laser 180 in epitaxial structure 170. The front and back mirrors define a laser cavity. Amplifier gain section 105 and a portion of waveguide 105 define optical amplifier 190.

As shown in Figure 1 A, despite being external to the laser cavity, the optical amplifier shares a common epitaxial structure 170 with the laser. Epitaxial structure 170 is formed on a substrate (not shown) by processes well-known in the art of semiconductor fabrication. By tailoring optical properties (such as band gap) of different portions of the epitaxial structure, both optically active and optically passive sections can be fabricated in a common structure. Examples of optically active sections of the embodiment shown in Figure 1 are gain sections 110 and 130, phase control section 140 and mirrors 110 and 150. An example of an optically passive section is the portion of waveguide 105 proximal to output facet 195.

According to the invention, at least a portion of laser 180 and optical amplifier 190 share a common waveguide 105. Different portions of the common waveguide may extend through optically active or passive regions. A common waveguide for the laser and optical amplifier enables the output from the laser to be directly coupled into the amplifier.

In the embodiment of Figure 1 A, amplifier 190 is external to the resonant cavity of laser 180 formed by mirrors 120 and 150. Moreover, amplifier gain section 110 is separately controllable from the laser and is adjustable to increase or decrease the light intensity and output power. The

SGBDR laser elements may be controlled separately from the amplifier to tune the laser frequency and otherwise control the input to the optical amplifier. By this arrangement of elements, power amplification and tuning functions are substantially uncoupled. In the embodiment of Figure 1 A, optical amplifier 190 has an active section and a passive section. The active section, amplifier gain section 110, is substantially straight. The passive section of waveguide 105 is curved and intersects output facet 195 at an oblique angle. Both waveguide curvature and the oblique intersection with the output facet act to prevent reflections at the output facet from coupling back into the optical amplifier and laser 180.

Figure IB shows a longitudinal cross section of a laser assembly 100 of Figure 1A. In Figure IB, laser assembly 100, waveguide 105, amplifier gain section 110, front resonator mirror 120, laser gain section 130, laser phase control section 140, back mirror 150 and electrical contact 160, epitaxial structure 170, laser 180, optical amplifier 190, output facet 195, p type semiconductor layer 125, n-type semiconductor layer 115, mirror sampling period 135, offset quantum wells 145 and stop etch layer 155 are shown.

In Figure IB waveguide 105 is formed between p-type and n-type semiconductor layers 125 and 115, respectively. Mirrors 120 and 150 are formed by sample gratings etched in waveguide 105 with sampling period 105, as is well-understood in the art. Figure IB illustrates the structure resulting from an offset quantum well technique for optically active and passive section formation. According to the offset quantum well technique, the optically active sections have multiple quantum well layers 145 grown in a region offset from waveguide 105. The multiple quantum well layers are separated from the waveguide by a thin stop etch layer 155. Removal of quantum wells, by etching for example, forms optically passive sections.

Figures 2A-2C illustrate cross-sectional structures over a portion of laser assembly 100 (see Figure 1) resulting from different techniques for forming optically active and passive sections and their junctions. Figure 2A illustrates a cross-sectional structure over a portion of laser assembly 100 (see Figure 1) resulting from a selected area regro wth technique. The selected area regro wth technique uses a dielectric mask to selectively control the growth rate and composition over different areas of the epitaxial structure. Thus, the material's bandgap can be shifted in certain sections making the material in that section passive or non-absorbing at desired wavelengths. In Figure 2 A, optically passive section 210, optically active section 220, bandgap-shifted quantum wells 230, active section quantum wells 240, and waveguide 105 (see Figure 1 A- IB) are shown. In Figure 2 A, different portions of waveguide 105 are optically active or passive due to bandgap-shifting of the quantum wells within the waveguide.

Figure 2B illustrates a cross-sectional structure over a portion of laser assembly 100 (see Figure 1) resulting from a selected area disordering technique for forming optically active and passive sections. The selected area disordering technique uses a dielectric cap or ion implantation to introduce vacancies which can be diffused through an active region to disorder the quantum wells by intermixing them. This disordering shifts quantum well bandgaps, creating optically passive waveguide sections.

In Figure 2B, optically passive section 210, optically active section 220, disordered wells 250, active section multiple quantum wells 260, and waveguide 105 (see Figure 1 A-IB) are shown. In Figure 2B, different portions of waveguide 105, sections 210 and 220, are optically active or passive due to the organization of the quantum wells within the waveguide material.

Figure 2C illustrates a cross-sectional structure over a portion of laser assembly 100 (see Figure 1) resulting from a butt joint regro wth technique for forming optically active and passive sections. According to the butt joint regrowth technique, the entire waveguide is etched away in optically passive sections and an optically passive waveguide is grown again. The newly grown portion of the waveguide is butted up against the active waveguide. In Figure 2B, optically passive section 210, optically active section 220, active, butt-joint interface 270, passive waveguide section 275, active waveguide section 285 and waveguide 105 (see Figure 1 A-IB) are shown. In Figure 2B, active waveguide section 285 and passive waveguide section 275 are separated by a distinct large gradient butt-joint interface 270 as a result of the etch removal process.

Figures 3A-3D are plan views, illustrating different embodiments of optical amplifier 190 (see Figure 1). In Figures 3A-3D optical amplifier 190, waveguide 105, epitaxial structure 170, output facet 195, active amplifier section 310 passive amplifier section 320, active-passive junction 330, curved waveguide portion 340, flared waveguide portions 350 and 355 and waveguide mode adapter 360 are shown.

In Figure 3 A, optical amplifier 190 has an active amplifier section 310 combined with a passive amplifier section 320, where the passive amplifier section includes curved waveguide portion 340. The curved waveguide portion intersects output facet 195 at an oblique angle. Both the waveguide curvature and oblique intersection significantly reduces the amount of light reflecting from the output facet back into the amplifier and laser. Active-passive junction 330 is preferably oblique to a centerline of waveguide 105 so that any reflections from this interface coupling back into the amplifier and laser will be reduced. However, alternate embodiments may have active-passive junction 330 substantially normal to a centerline of the waveguide.

Figure 3B shows an alternate embodiment where the amplifier active section has been segmented into a plurality of active sections in order to increase the amplifier output power and reduce a noise figure. In this embodiment shown in Figure 3B, the amplifier active section is segmented into two amplifier active sections 310 that may be independently controllable. Other embodiments have more than two amplifier active sections. This segmenting of the amplifier enables the use of different bias points for the different sections. Having a plurality of amplifier stages allows higher saturated output powers to be reached with better noise performance.

Figure 3C shows an alternate embodiment where a waveguide portion in the amplifier active section is flared, or tapered, to increase the saturated output power. Flared waveguide portion 350 increases the amplifier active volume as compared to the embodiment shown in Figure 3A and decreases the photon density. To accomplish this effectively without introducing significant fiber coupling difficulties it is preferable to use an adiabatic flare, wherein there is no energy transfer across optical modes over the flare to a wider waveguide cross-section. In a preferred embodiment, a second flared-down section 355 to a narrow waveguide cross-section is positioned in the amplifier optically passive section 320 since it is difficult to couple effectively from a wide waveguide into a single mode fiber at output facet 195. In a preferred embodiment, such a flared-down portion is before a curved waveguide portion 340, otherwise, higher order modes will be excited when curving the wide waveguide.. In the embodiment shown in Figure 3C, active-passive junction 330 is angled so that any reflections from this interface coupling back into the amplifier and laser will be reduced.

Figure 3D shows another embodiment including a waveguide mode adapter. A waveguide mode adapter is preferred in many embodiments to enlarge the optical mode near output facet 195 so that it is more closely matched to the mode in an optical fiber that, as an element in a communications system, may carry the light away from the output facet. Including a waveguide mode adapter thus reduces the fiber coupling loss and increases the alignment tolerances between laser assembly 100 (see Figure 1) and an optical fiber of another system. An embodiment of a waveguide mode adapter includes a section of passive waveguide wherein the waveguide's cross sectional is varied to expand the waveguide optical mode in an adiabatic manner.

The foregoing description of a preferred embodiment of the invention has been presented for purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise forms disclosed. Obviously, many modifications and variations will be apparent to practitioners skilled in this art. It is intended that the scope of the invention be defined by the following claims and their equivalents.

Claims

CLAIMSWhat is claimed is:
1. A diode laser assembly, comprising: a substrate; an epitaxial structure formed on the substrate; a laser formed in the epitaxial structure; and an amplifier formed in the epitaxial structure, at least a portion of the laser and amplifier sharing a common waveguide.
2. The laser assembly of claim 1 wherein the common waveguide has non-uniform optical properties along its centerline.
3. The laser assembly of claim 1 wherein the common waveguide has non-uniform cross-sectional area along its centerline.
4. The laser assembly of claim 1 wherein the common waveguide has non-uniform curvature along its centerline.
5. The laser assembly of claim 1 wherein the common waveguide has non-uniform optical properties normal to its centerline.
6. The assembly of claim 1 , wherein the amplifier includes at least one active region and at least one passive region.
7. The assembly of claim 6, wherein the waveguide extends through an active region and a passive region.
8. The assembly of claim 7, wherein a portion of the waveguide in the amplifier is curved.
9. The assembly of claim 7, wherein at least a portion of the waveguide in a passive region of the amplifier is curved.
10. The assembly of claim 7, wherein a portion of the waveguide in the amplifier is curved and the amplifier includes a flared waveguide section.
11. The assembly of claim 7, wherein an interface between the active region and the passive region is oblique to a centerline of the waveguide.
12. The assembly of claim 7, wherein an interface between the active region and the passive region is substantially normal to a centerline of the waveguide.
13. The assembly of claim 7, wherein an end of the waveguide in the amplifier terminates at an oblique angle to an output facet.
14. The assembly of claim 6, wherein the waveguide includes a waveguide mode adapter.
15. The assembly of claim 1 , wherein at least a portion of the waveguide is flared.
16. The assembly of claim 23 , wherein a flared portion of the waveguide is in an active region.
17. The assembly of claim 23 , wherein a flared portion of the waveguide is in a passive region.
18. The assembly of claim 1 , wherein the waveguide includes an active section.
19. The assembly of claim 18, wherein the active section of the waveguide is positioned in the first active section of the amplifier.
20. The assembly of claim 18, wherein the active section of the waveguide is positioned in the second active section of the amplifier.
21. The assembly of claim 6, wherein the first active region has a oblique distal face.
22. The assembly of claim 1, wherein the amplifier includes a plurality of independently controllable active regions.
23. The assembly of claim 22, wherein a first and a second active region are separated by a passive region.
24. The assembly of claim 23, wherein the first active region has a oblique distal face.
25. The assembly of claim 32, wherein the second active region has a oblique proximal face.
26. The assembly of claim 23, wherein the oblique distal face of the first active region is parallel to the oblique proximal face of the second active region.
27- The assembly of claim 23, wherein the second active region has a oblique distal face.
28. The assembly of claim 27, wherein the proximal face and the distal face of the second region are parallel.
29. The assembly of claim 1, wherein the epitaxial structure has areas of differing optical properties.
30. The assembly of claim 1 , wherein the laser includes a mode selection element.
31. The assembly of claim 30, wherein the mode selection element is a controllable phase shifting element.
32. The assembly of claim 1, wherein the laser includes first and second reflectors and at least one of the first and second reflectors is tunable.
33. The assembly of claim 32, wherein at least one of the first and second reflectors is a distributed reflector.
34. The assembly of claim 32, wherein both of the first and second reflectors are distributed reflectors.
35. The assembly of claim 32, wherein at least one of the first and second reflectors is a distributed Bragg reflector.
36. The assembly of claim 32, wherein each of the first and second reflectors is a distributed Bragg reflector.
37. The assembly of claim 32, wherein a maximum reflectivity of at least one of the first and second reflectors is tunable.
38. The assembly of claim 32, wherein a maximum reflectivity of each of the first and second reflectors is tunable.
39. The assembly of claim 32, wherein the maximum reflectivities of each of the first and second reflectors are tunable relative to each other.
40. The assembly of claim 1 , wherein the laser has a multi-active region gain medium.
41. The assembly of claim 32, wherein the laser includes a controllable amplifier positioned outside of the laser.
42. The assembly of claim 32, wherein the laser includes a controllable attenuator positioned outside of the laser.
43. The assembly of claim 32, wherein the laser includes an attenuator and at least one amplifier positioned outside of the laser.
44. A diode laser assembly, comprising: a first semiconductor layer in an epitaxial structure; a second semiconductor layer formed in the epitaxial structure, the first and second semiconductor layers having different dopings; a waveguide layer formed between the first and second semiconductor layers, the first waveguide layer including a waveguide, a first reflector and a second reflector; a optically active medium disposed between the first and second reflectors, the first and second reflectors defining a laser cavity; and an amplifier formed in the epitaxial structure, wherein the laser cavity and the amplifier are optically aligned.
45. The assembly of claim 44, wherein the amplifier includes a first active region and a passive region.
46. The assembly of claim 45, wherein the waveguide extends through at least a portion of the amplifier.
47. The assembly of claim 66, wherein the waveguide extends through the first active region and the passive region.
48. The assembly of claim 57, wherein a distal portion of the waveguide in the amplifier is curved.
49. The assembly of claim 57, wherein a distal end of the waveguide in the amplifier terminates at an oblique angle to an output facet.
50. The assembly of claim 66, wherein the waveguide includes a mode adapter.
51. The assembly of claim 44, wherein at least a portion of the waveguide is flared.
52. The assembly of claim 44, wherein the waveguide includes an active section.
53. The assembly of claim 52, wherein the active section of the waveguide is positioned in the first active section of the amplifier.
54. The assembly of claim 52, wherein the active section of the waveguide is positioned in the second active section of the amplifier.
55. The assembly of claim 45, wherein the first active region has an oblique distal face.
56. The assembly of claim 45, wherein the amplifier includes a second active region.
57. The assembly of claim 66, wherein the first and second active regions are separated by a passive region.
58. The assembly of claim 57, wherein the first active region has an oblique distal face.
59. The assembly of claim 58, wherein the second active region has an oblique proximal face.
60. The assembly of claim 59, wherein the oblique distal face of the first active region is parallel to the oblique proximal face of the second active region.
61. The assembly of claim 59, wherein the second active region has an oblique distal face.
62. The assembly of claim 61 , wherein the proximal face and the distal face of the second region are parallel.
63. The assembly of claim 44, wherein the epitaxial structure has areas of differing optical properties.
64. The assembly of claim 44, wherein the laser includes a mode selection element.
65. The assembly of claim 64, wherein the mode selection element is a controllable phase shifting element.
66. The assembly of claim 44, wherein at least one of the first and second reflectors is tunable.
67. The assembly of claim 66, wherein at least one of the first and second reflectors is a distributed reflector.
68. The assembly of claim 66, wherein both of the first and second reflectors is a distributed reflector.
69. The assembly of claim 66, wherein at least one of the first and second reflectors is a distributed Bragg reflector.
70. The assembly of claim 66, wherein each of the first and second reflectors is a distributed Bragg reflector.
71. The assembly of claim 66, wherein a maximum reflectivity of at least one of the first and second reflectors is tunable.
72. The assembly of claim 66, wherein a maximum reflectivity of each of the first and second reflectors is tunable.
73. The assembly of claim 66, wherein the maximum reflectivities of each of the first and second reflectors are tunable relative to each other.
74. The assembly of claim 66, wherein the laser includes a controllable amplifier positioned outside of the laser.
75. The assembly of claim 66, wherein the laser includes a controllable attenuator positioned outside of the laser.
76. The assembly of claim 66, wherein the laser includes an attenuator and at least one amplifier positioned outside of the resonant cavity.
77. A method of generating an optical signal, comprising: providing a diode laser assembly including an epitaxial structure formed on a substrate, a laser and an amplifier formed in the epitaxial structure, at least a portion of the laser and amplifier sharing a common waveguide; producing a tunable laser output from the laser; coupling the laser output into the amplifier along the common waveguide; and generating an optical signal from the amplifier.
78. The method of claim 77, wherein the optical signal is generated while controlling an intensity of the laser output and maintaining a constant laser wavelength.
79. The method of claim 77, wherein the optical signal is tunable.
80. The method of claim 77, wherein the optical signal is tunable within a range of at least 15 nm.
81. The method of claim 77, wherein optical signal is tunable over a tuning range while maintaining a substantially constant output power.
82. The method of claim 77, wherein optical signal is tunable over a tuning range of at least 15 nm while maintaining a substantially constant output power.
83. The method of claim 77, wherein the optical signal is generated while alternating a propagation direction of the laser output within the amplifier.
84. The method of claim 77, wherein the optical signal is generated while minimizing back reflections into the laser.
85. The method of claim 77, wherein the optical signal is generated while altering at least one optical mode in the amplifier.
86. The method of claim 77, wherein altering the optical modes is an adiabatic mode expansion.
87. The method of claim 77, wherein the optical signal is generated while selectively exciting waveguide modes in the amplifier.
88. A method of generating an optical signal, comprising: providing a diode laser assembly including first and second semiconductor layers in an epitaxial structure, a waveguide with at least two grating sections and a tapered section, the waveguide being formed between the first and second semiconductor layers, and a laser and an amplifier formed in the epitaxial structure; producing a tunable laser output between the grating sections of the waveguide; coupling the laser output into the amplifier; propagating the laser output in the tapered section of the waveguide in the amplifier; and generating an optical signal from the amplifier.
89. The method of claim 88, wherein the optical signal is generated while controlling an intensity of the laser output and maintaining a constant laser wavelength.
90. The method of claim 88, wherein the optical signal is tunable.
91. The method of claim 88, wherein the optical signal is tunable within a range of at least 15 nm.
92. The method of claim 88, wherein optical signal is tunable over a tuning range while maintaining a substantially constant output power.
93. The method of claim 88, wherein optical signal is tunable over a tuning range of at least 15 nm while maintaining a substantially constant output power.
94. The method of claim 88, wherein the optical signal is generated while alternating a propagation direction of the laser output within the amplifier.
95. The method of claim 88, wherein the optical signal is generated while minimizing back reflections into the laser.
96. The method of claim 88, wherein the optical signal is generated while altering at least one optical mode in the amplifier.
97. The method of claim 96, wherein altering the optical modes is an adiabatic mode expansion.
98. The method of claim 88, wherein the optical signal is generated while selectively exciting waveguide modes in the amplifier.
99. A method of making a diode laser assembly, comprising: providing a substrate; forming an epitaxial structure on the substrate, the epitaxial structure having optically active and optically inactive areas; forming a waveguide layer in the epitaxial structure; and forming a laser and an amplifier in the epitaxial structure containing the waveguide layer.
100. The method of claim 99, wherein the optically active areas of the epitaxial structure are formed using off-set quantum wells.
101. The method of claim 99, wherein the optically inactive areas are formed by a selective area growth.
102. The method of claim 99, wherein the optically inactive areas are formed by a selective area growth using a dielectric mask.
103. The method of claim 99, wherein the optically inactive areas are formed by selective area disordering.
104. The method of claim 99, wherein the optically inactive areas are formed by butt joint regrowth.
105. The method of claim 99, wherein the optically inactive areas are formed with multiple quantum well layers grow on top of the waveguide layer.
106. The method of claim 99, further comprising: forming areas of different bandgaps in the epitaxial structure.
107. The method of claim 99, further comprising: bombarding at least a portion of the epitaxial structure with ions; and tailoring a bandgap the at least a portion of the epitaxial structure to create a gain medium of the laser.
108. The method of claim 107, further comprising: annealing at least a portion of the epitaxial structure to diffuse impurities and vacancies in a selected region of the epitaxial structure to determine the region's optical properties.
109. The method of claim 102, wherein the ions have an energy no greater than about 200 eV.
110. The method of claim 99, wherein the amplifier includes a first active region and a passive region.
111. The method of claim 110, wherein the waveguide extends through at least a portion of the amplifier.
112. The method of claim 111, wherein the waveguide extends through the first active region and the passive region.
113. The method of claim 112, wherein a distal portion of the waveguide in the amplifier is curved.
114. The method of claim 112, wherein a distal portion of the waveguide in the amplifier is curved and the amplifier includes a tapered section.
115. The method of claim 112, wherein a distal end of the waveguide in the amplifier terminates at an oblique angle to an output facet.
116. The method of claim 99, wherein at least a portion of the waveguide is tapered.
117. The method of claim 99, wherein the waveguide includes an active section.
118. The method of claim 117, wherein the active section of the waveguide is positioned in the first active section of the amplifier.
119. The method of claim 117, wherein the active section of the waveguide is positioned in the second active section of the amplifier.
120. The method of claim 110, wherein the first active region has a tapered distal face.
121. The method of claim 110, wherein the amplifier includes a second active region.
122. The method of claim 121, wherein the first and second active regions are separated by a passive region.
123. The method of claim 122, wherein the first active region has a tapered distal face.
124. The method of claim 123, wherein the second active region has a tapered proximal face.
125. The method of claim 124, wherein the tapered distal face of the first active region is parallel to the tapered proximal face of the second active region.
126. The method of claim 124, wherein the second active region has a tapered distal face.
127. The method of claim 126, wherein the proximal face and the distal face of the second region are parallel.
128. The method of claim 99, wherein the laser includes first and second reflectors, at least one of the first and second reflectors being a distributed Bragg reflector.
129. The method of claim 128, wherein a maximum reflectivity of at least one of the first and second reflectors is tunable.
130. The method of claim 129, wherein the maximum reflectivities of each of the first and second reflectors are tunable relative to each other.
131. A method of making a diode assembly, comprising: providing a substrate; forming a first semiconductor layer and a second semiconductor layer in an epitaxial structure having optically active and optically in-active areas, the first and second semiconductor layers having different dopings; and forming a first waveguide layer between the first and second semiconductor layers, the first waveguide layer including an amplifier, a first reflector, a second reflector and a gain medium, the first and second reflectors defining a laser cavity.
132. The method of claim 131, wherein the optically active areas in the epitaxial structure are formed using off-set quantum wells.
133. The method of claim 131, wherein the optically inactive areas in the epitaxial structure are formed by a selective area growth.
134. The method of claim 131, wherein the optically inactive areas are formed by a selective area growth using a dielectric mask.
135. The method of claim 131, wherein the optically inactive areas are formed by selective area disordering.
136. The method of claim 131, wherein the optically inactive areas are formed by butt joint regrowth.
137. The method of claim 131, wherein the optically inactive areas are formed with multiple quantum well layers grow on top of the waveguide layer.
138. The method of claim 131, further comprising: forming areas of different bandgaps in the epitaxial structure.
139. The method of claim 131, further comprising: bombarding at least a portion of the epitaxial structure with ions; and tailoring a bandgap the at least a portion of the epitaxial structure to create a gain medium of the laser.
140. The method of claim 139, further comprising: annealing at least a portion of the epitaxial structure to diffuse impurities and vacancies in a selected region of the epitaxial structure to determine the region's optical properties.
141. The method of claim 134, wherein the ions have an energy no greater than about 200 eV.
142. The method of claim 131, wherein the amplifier includes a first active region and a passive region.
143. The method of claim 142, wherein the waveguide layer includes a waveguide that extends through at least a portion of the amplifier.
144. The method of claim 143, wherein the waveguide extends through the first active region and the passive region.
145. The method of claim 144, wherein a distal portion of the waveguide in the amplifier is curved.
146. The method of claim 144, wherein a distal portion of the waveguide in the amplifier is curved and the amplifier includes a tapered section.
147. The method of claim 144, wherein a distal end of the waveguide in the amplifier terminates at an oblique angle to an output facet.
148. The method of claim 143, wherein at least a portion of the waveguide is tapered.
149. The method of claim 143, wherein the waveguide includes an active section.
150. The method of claim 149, wherein the active section of the waveguide is positioned in the first active section of the amplifier.
151. The method of claim 149, wherein the active section of the waveguide is positioned in the second active section of the amplifier.
152. The method of claim 142, wherein the first active region has a tapered distal face.
153. The method of claim 142, wherein the amplifier includes a second active region.
154. The method of claim 153, wherein the first and second active regions are separated by a passive region.
155. The method of claim 154, wherein the first active region has a tapered distal face.
156. The method of claim 155, wherein the second active region has a tapered proximal face.
157. The method of claim 156, wherein the tapered distal face of the first active region is parallel to the tapered proximal face of the second active region.
158. The method of claim 156, wherein the second active region has a tapered distal face.
159. The method of claim 158, wherein the proximal face and the distal face of the second region are parallel.
160. The method of claim 131, wherein at least one of the first and second reflectors is a distributed Bragg reflector.
161. The method of claim 160, wherein a maximum reflectivity of at least one of the first and second reflectors is tunable.
162. The method of claim 161, wherein the maximum reflectivities of each of the first and second reflectors are tunable relative to each other.
PCT/US2000/022816 1999-09-02 2000-08-18 Tunable laser source with integrated optical amplifier WO2001017076A2 (en)

Priority Applications (25)

Application Number Priority Date Filing Date Title
US15207299P true 1999-09-02 1999-09-02
US16207299P true 1999-09-02 1999-09-02
US15204999P true 1999-09-02 1999-09-02
US15203899P true 1999-09-02 1999-09-02
US60/152,038 1999-09-02
US60/152,072 1999-09-02
US60/152,049 1999-09-02
US61486500A true 2000-07-12 2000-07-12
US09/614,674 US6624000B1 (en) 1999-09-02 2000-07-12 Method for making a monolithic wavelength converter assembly
US09/614,865 2000-07-12
US09/614,195 2000-07-12
US09/614,375 US6658035B1 (en) 1999-09-02 2000-07-12 Tunable laser source with integrated optical amplifier
US09/614,378 2000-07-12
US09/614,376 2000-07-12
US09/614,375 2000-07-12
US09/614,195 US6574259B1 (en) 1999-09-02 2000-07-12 Method of making an opto-electronic laser with integrated modulator
US09/614,224 2000-07-12
US09/614,895 US6349106B1 (en) 1999-09-02 2000-07-12 Method for converting an optical wavelength using a monolithic wavelength converter assembly
US09/614,376 US6614819B1 (en) 1999-09-02 2000-07-12 Method of modulating an optical wavelength with an opto-electronic laser with integrated modulator
US09/614,895 2000-07-12
US09/614,224 US6654400B1 (en) 1999-09-02 2000-07-12 Method of making a tunable laser source with integrated optical amplifier
US09/614,377 US6580739B1 (en) 1999-09-02 2000-07-12 Integrated opto-electronic wavelength converter assembly
US09/614,377 2000-07-12
US09/614,378 US6628690B1 (en) 1999-09-02 2000-07-12 Opto-electronic laser with integrated modulator
US09/614,674 2000-07-12

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE2000626071 DE60026071T8 (en) 1999-09-02 2000-08-18 Tunable laser source with integrated optical amplifier
CA 2384033 CA2384033A1 (en) 1999-09-02 2000-08-18 Tunable laser source with integrated optical amplifier
JP2001520520A JP4918203B2 (en) 1999-09-02 2000-08-18 Tunable laser source with integrated optical amplifier
AU22463/01A AU2246301A (en) 1999-09-02 2000-08-18 Tunable laser source with integrated optical amplifier
EP20000986181 EP1210753B1 (en) 1999-09-02 2000-08-18 Tunable laser source with integrated optical amplifier

Publications (3)

Publication Number Publication Date
WO2001017076A2 true WO2001017076A2 (en) 2001-03-08
WO2001017076A3 WO2001017076A3 (en) 2001-10-25
WO2001017076A9 WO2001017076A9 (en) 2002-09-19

Family

ID=27584540

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/022816 WO2001017076A2 (en) 1999-09-02 2000-08-18 Tunable laser source with integrated optical amplifier

Country Status (1)

Country Link
WO (1) WO2001017076A2 (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6785457B2 (en) * 2001-08-01 2004-08-31 Matsushita Electric Industrial Co., Ltd. Optical waveguide device and coherent light source and optical apparatus using the same
US6822995B2 (en) 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
EP1598683A1 (en) * 2004-05-17 2005-11-23 Avanex Corporation Optoelectronic device comprising curved waveguide having inversed mesa cross-section
US6985648B2 (en) 2001-10-09 2006-01-10 Infinera Corporation Method of in-wafer testing of monolithic photonic integrated circuits (PICs) formed in a semiconductor wafer
US7079720B2 (en) 2001-10-09 2006-07-18 Infinera Corporation Method of operating an array of laser sources integrated in a monolithic chip or in a photonic integrated circuit (PIC)
US7095770B2 (en) 2001-12-20 2006-08-22 Finisar Corporation Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
US7236656B2 (en) 2001-10-09 2007-06-26 Infinera Corporation Optical transport network
US7477851B2 (en) 2002-07-09 2009-01-13 Finisar Corporation Power source for a dispersion compensation fiber optic system
US7492976B2 (en) 2002-10-04 2009-02-17 Finisar Corporation Flat dispersion frequency discriminator (FDFD)
US7657179B2 (en) 2002-07-09 2010-02-02 Finisar Corporation Wavelength division multiplexing source using multifunctional filters
US7663762B2 (en) 2002-07-09 2010-02-16 Finisar Corporation High-speed transmission system comprising a coupled multi-cavity optical discriminator
US8168456B2 (en) 2004-10-01 2012-05-01 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
US8451875B2 (en) 2004-10-01 2013-05-28 Finisar Corporation Vertical cavity surface emitting laser having strain reduced quantum wells

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1539028A (en) * 1975-12-18 1979-01-24 Tokyo Inst Tech Optical systems
US5088105A (en) * 1991-03-26 1992-02-11 Spectra Diode Laboratories, Inc. Optical amplifier with folded light path and laser-amplifier combination
EP0620475A1 (en) * 1993-03-15 1994-10-19 Canon Kabushiki Kaisha Optical devices and optical communication systems using the optical device
US5715268A (en) * 1994-01-24 1998-02-03 Sdl, Inc. Laser amplifiers with suppressed self oscillation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1539028A (en) * 1975-12-18 1979-01-24 Tokyo Inst Tech Optical systems
US5088105A (en) * 1991-03-26 1992-02-11 Spectra Diode Laboratories, Inc. Optical amplifier with folded light path and laser-amplifier combination
EP0620475A1 (en) * 1993-03-15 1994-10-19 Canon Kabushiki Kaisha Optical devices and optical communication systems using the optical device
US5715268A (en) * 1994-01-24 1998-02-03 Sdl, Inc. Laser amplifiers with suppressed self oscillation

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
LEE S -L ET AL: "SAMPLED GRATING DBR LASER ARRAYS WITH ADJUSTABLE 0.8/1.6-NM WAVELENGTH SPACING" IEEE PHOTONICS TECHNOLOGY LETTERS,IEEE INC. NEW YORK,US, vol. 11, no. 8, August 1999 (1999-08), pages 955-957, XP000860962 ISSN: 1041-1135 *
VIJAYSEKHAR JAYARAMAN ET AL: "THEORY, DESIGN, AND PERFORMANCE OF EXTENDED TUNING RANGE SEMICONDUCTOR LASERS WITH SAMPLED GRATINGS" IEEE JOURNAL OF QUANTUM ELECTRONICS,IEEE INC. NEW YORK,US, vol. 29, no. 6, 1 June 1993 (1993-06-01), pages 1824-1834, XP000397620 ISSN: 0018-9197 *

Cited By (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6785457B2 (en) * 2001-08-01 2004-08-31 Matsushita Electric Industrial Co., Ltd. Optical waveguide device and coherent light source and optical apparatus using the same
US7483599B2 (en) 2001-10-09 2009-01-27 Infinera Corporation Method of calibrating a monolithic transmitter photonic integrated circuit (TXPIC) chip
US7792396B2 (en) 2001-10-09 2010-09-07 Infinera Corporation Probe card for testing in-wafer photonic integrated circuits (PICs) and method of use
US6985648B2 (en) 2001-10-09 2006-01-10 Infinera Corporation Method of in-wafer testing of monolithic photonic integrated circuits (PICs) formed in a semiconductor wafer
US7043109B2 (en) 2001-10-09 2006-05-09 Infinera Corporation Method of in-wafer testing of monolithic photonic integrated circuits (PICs) formed in a semiconductor wafer
US7062114B2 (en) 2001-10-09 2006-06-13 Infinera Corporation Submount for a photonic integrated circuit (PIC) chip
US7079720B2 (en) 2001-10-09 2006-07-18 Infinera Corporation Method of operating an array of laser sources integrated in a monolithic chip or in a photonic integrated circuit (PIC)
US7079715B2 (en) 2001-10-09 2006-07-18 Infinera Corporation Transmitter photonic integrated circuit (TxPIC) chip architectures and drive systems and wavelength stabilization for TxPICs
US7079719B2 (en) 2001-10-09 2006-07-18 Infinera Corporation Method of tuning optical components integrated on a monolithic chip
US7079721B2 (en) 2001-10-09 2006-07-18 Infinera Corporation Method and apparatus of monitoring and controlling the emission wavelengths of a plurality of laser sources integrated on the same chip or in the same photonic integrated circuit (PIC)
US7092589B2 (en) 2001-10-09 2006-08-15 Infinera Corporation Method of tuning integrated laser sources with integrated wavelength tuning elements on the same substrate or in a monolithic photonic integrated circuit (PIC)
US7489838B2 (en) 2001-10-09 2009-02-10 Infinera Corporation Optical transmitter
US7103239B2 (en) 2001-10-09 2006-09-05 Infinera Corporation Optical transmitter
US7136546B2 (en) 2001-10-09 2006-11-14 Infinera Corporation Method and apparatus of monitoring and controlling the emission wavelengths of a plurality of laser sources integrated on the same chip or in the same photonic integrated circuit (PIC)
US7200296B2 (en) 2001-10-09 2007-04-03 Infinera Corporation Monolithic photonic integrated circuit (PIC) CHIP
US7236656B2 (en) 2001-10-09 2007-06-26 Infinera Corporation Optical transport network
US7885492B2 (en) 2001-10-09 2011-02-08 Infinera Corporation Transmitter photonic integrated circuit (TxPIC) chips
US7283694B2 (en) 2001-10-09 2007-10-16 Infinera Corporation Transmitter photonic integrated circuits (TxPIC) and optical transport networks employing TxPICs
US7324719B2 (en) 2001-10-09 2008-01-29 Infinera Corporation Method tuning optical components integrated in a monolithic photonic integrated circuit (PIC)
US7460742B2 (en) 2001-10-09 2008-12-02 Infinera Corporation Method and apparatus for providing an antireflection coating on the output facet of a photonic integrated circuit (PIC) chip
US7471857B2 (en) 2001-10-09 2008-12-30 Infinera Corporation Method of tuning optical components integrated in a monolithic photonic integrated circuit (PIC)
US9971090B2 (en) 2001-10-09 2018-05-15 Infinera Corporation Apparatus and method for tuning a laser source emission wavelength employing a laser source contact comprising electrode segments
US7095770B2 (en) 2001-12-20 2006-08-22 Finisar Corporation Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
US6822995B2 (en) 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
US7657179B2 (en) 2002-07-09 2010-02-02 Finisar Corporation Wavelength division multiplexing source using multifunctional filters
US7663762B2 (en) 2002-07-09 2010-02-16 Finisar Corporation High-speed transmission system comprising a coupled multi-cavity optical discriminator
US7477851B2 (en) 2002-07-09 2009-01-13 Finisar Corporation Power source for a dispersion compensation fiber optic system
US7492976B2 (en) 2002-10-04 2009-02-17 Finisar Corporation Flat dispersion frequency discriminator (FDFD)
JP4764633B2 (en) * 2002-11-06 2011-09-07 フィニサー コーポレイション Light source for dispersion-compensated optical fiber system
EP1598683A1 (en) * 2004-05-17 2005-11-23 Avanex Corporation Optoelectronic device comprising curved waveguide having inversed mesa cross-section
US7254306B2 (en) 2004-05-17 2007-08-07 Avanex Corporation Optoelectronic component with curved waveguide with inwardly sloped sides
US8168456B2 (en) 2004-10-01 2012-05-01 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
US8451875B2 (en) 2004-10-01 2013-05-28 Finisar Corporation Vertical cavity surface emitting laser having strain reduced quantum wells

Also Published As

Publication number Publication date
WO2001017076A3 (en) 2001-10-25
WO2001017076A9 (en) 2002-09-19

Similar Documents

Publication Publication Date Title
US5088105A (en) Optical amplifier with folded light path and laser-amplifier combination
JP2661795B2 (en) Steering for a monolithic integrated optical delay network of the antenna beam
US5926496A (en) Semiconductor micro-resonator device
US5381262A (en) Planar wave guide type optical amplifier
US7260279B2 (en) Integrated opto-electronic oscillators
US6310995B1 (en) Resonantly coupled waveguides using a taper
US6434175B1 (en) Multiwavelength distributed bragg reflector phased array laser
Amersfoort et al. Phased-array wavelength demultiplexer with flattened wavelength response
US5648978A (en) Oscillation polarization mode selective semiconductor laser, modulation method therefor and optical communication system using the same
US6633593B2 (en) Tunable semiconductor laser having cavity with wavelength selective mirror and Mach-Zehnder interferometer
EP0602873B1 (en) Optical switching array using semiconductor amplifier waveguides
US6819814B2 (en) Twin waveguide based design for photonic integrated circuits
EP1121720B1 (en) High power semiconductor light source
US20060002443A1 (en) Multimode external cavity semiconductor lasers
US5657338A (en) Tapered thickness waveguide integrated semiconductor laser
US5870417A (en) Thermal compensators for waveguide DBR laser sources
US5134671A (en) Monolithic integrated optical amplifier and photodetector
EP1368870B1 (en) Asymmetric waveguide electroabsorption-modulated laser
US5400353A (en) Tapered semiconductor laser gain structure with cavity spoiling grooves
US5358896A (en) Method of producing optical integrated circuit
US6347104B1 (en) Optical signal power monitor and regulator
EP0463569B1 (en) Semiconductor optical amplifying apparatus
EP0200194A2 (en) Adscititious resonator
US6282219B1 (en) Substrate stack construction for enhanced coupling efficiency of optical couplers
JP3202082B2 (en) Method for producing a wide output mode semiconductor optical component and the component

Legal Events

Date Code Title Description
AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US US US US US US US US US US US US UZ VN YU ZA ZW

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

AK Designated states

Kind code of ref document: A3

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US US US US US US US US US US US US UZ VN YU ZA ZW

WWE Wipo information: entry into national phase

Ref document number: 2384033

Country of ref document: CA

ENP Entry into the national phase in:

Ref country code: JP

Ref document number: 2001 520520

Kind code of ref document: A

Format of ref document f/p: F

WWE Wipo information: entry into national phase

Ref document number: 2000986181

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 2000986181

Country of ref document: EP

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

COP Corrected version of pamphlet

Free format text: PAGES 1/7-7/7, DRAWINGS, REPLACED BY NEW PAGES 1/7-7/7; DUE TO LATE TRANSMITTAL BY THE RECEIVING OFFICE

AL Designated countries for regional patents

Kind code of ref document: C2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

AK Designated states

Kind code of ref document: C2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US US US US US US US US US US US US UZ VN YU ZA ZW

WWG Wipo information: grant in national office

Ref document number: 2000986181

Country of ref document: EP