DE60020184D1 - Eingebetteter Heterostruktur für Laser und lichtemittierenden Dioden - Google Patents

Eingebetteter Heterostruktur für Laser und lichtemittierenden Dioden

Info

Publication number
DE60020184D1
DE60020184D1 DE60020184T DE60020184T DE60020184D1 DE 60020184 D1 DE60020184 D1 DE 60020184D1 DE 60020184 T DE60020184 T DE 60020184T DE 60020184 T DE60020184 T DE 60020184T DE 60020184 D1 DE60020184 D1 DE 60020184D1
Authority
DE
Germany
Prior art keywords
lasers
light
emitting diodes
embedded heterostructure
heterostructure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60020184T
Other languages
English (en)
Other versions
DE60020184T2 (de
Inventor
Shih-Yuan Wang
Yong Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumileds LLC
Original Assignee
Lumileds LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lumileds LLC filed Critical Lumileds LLC
Application granted granted Critical
Publication of DE60020184D1 publication Critical patent/DE60020184D1/de
Publication of DE60020184T2 publication Critical patent/DE60020184T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE60020184T 1999-03-05 2000-02-04 Eingebetteter Heterostruktur für Laser und lichtemittierenden Dioden Expired - Lifetime DE60020184T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/263,654 US6327288B1 (en) 1999-03-05 1999-03-05 Buried heterostructure for lasers and light emitting diodes
US263654 1999-03-05

Publications (2)

Publication Number Publication Date
DE60020184D1 true DE60020184D1 (de) 2005-06-23
DE60020184T2 DE60020184T2 (de) 2006-01-19

Family

ID=23002693

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60020184T Expired - Lifetime DE60020184T2 (de) 1999-03-05 2000-02-04 Eingebetteter Heterostruktur für Laser und lichtemittierenden Dioden

Country Status (4)

Country Link
US (2) US6327288B1 (de)
EP (1) EP1037344B1 (de)
JP (1) JP2000261097A (de)
DE (1) DE60020184T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3996408B2 (ja) * 2002-02-28 2007-10-24 ローム株式会社 半導体発光素子およびその製造方法
US6724795B2 (en) * 2002-05-10 2004-04-20 Bookham Technology, Plc Semiconductor laser
US20090233414A1 (en) * 2005-10-20 2009-09-17 Shah Pankaj B Method for fabricating group III-nitride high electron mobility transistors (HEMTs)
US7848379B2 (en) * 2006-01-25 2010-12-07 Sensor Electronic Technology, Inc. LED-based optical pumping for laser light generation
US8064493B2 (en) * 2009-06-12 2011-11-22 Binoptics Corporation Surface emitting photonic device
US9190560B2 (en) 2010-05-18 2015-11-17 Agency For Science Technology And Research Method of forming a light emitting diode structure and a light diode structure
KR101678967B1 (ko) 2010-10-07 2016-11-24 삼성전자 주식회사 반도체 기판의 도광층 형성방법
US9917414B2 (en) * 2015-07-15 2018-03-13 International Business Machines Corporation Monolithic nanophotonic device on a semiconductor substrate
US9728483B2 (en) * 2015-12-09 2017-08-08 Honeywell Federal Manufacturing & Technologies, Llc Method of forming an integrated circuit with heat-mitigating diamond-filled channels
CN114825031B (zh) * 2022-06-24 2022-09-23 度亘激光技术（苏州）有限公司 半导体激光器及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60235485A (ja) 1984-05-08 1985-11-22 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置の製造方法
JPS62212187A (ja) 1986-03-14 1987-09-18 Hiromu Matsushita コピ−した粉末トナ−を多種の素材に転写する方法
JPS62213187A (ja) 1986-03-14 1987-09-19 Toshiba Corp 半導体発光素子およびその製造方法
JPH04127521A (ja) 1990-09-19 1992-04-28 Fujitsu Ltd 半導体基板の製造方法
DE69406049T2 (de) 1993-06-04 1998-04-16 Sharp Kk Lichtmittierende Halbleitervorrichtung mit einer dritten Begrenzungsschicht
JP3060973B2 (ja) 1996-12-24 2000-07-10 日本電気株式会社 選択成長法を用いた窒化ガリウム系半導体レーザの製造方法及び窒化ガリウム系半導体レーザ
EP2234142A1 (de) 1997-04-11 2010-09-29 Nichia Corporation Nitridhalbleitersubstrat

Also Published As

Publication number Publication date
US6327288B1 (en) 2001-12-04
EP1037344B1 (de) 2005-05-18
JP2000261097A (ja) 2000-09-22
US20020075925A1 (en) 2002-06-20
DE60020184T2 (de) 2006-01-19
US6849474B2 (en) 2005-02-01
EP1037344A1 (de) 2000-09-20

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