DE60020184D1 - Eingebetteter Heterostruktur für Laser und lichtemittierenden Dioden - Google Patents
Eingebetteter Heterostruktur für Laser und lichtemittierenden DiodenInfo
- Publication number
- DE60020184D1 DE60020184D1 DE60020184T DE60020184T DE60020184D1 DE 60020184 D1 DE60020184 D1 DE 60020184D1 DE 60020184 T DE60020184 T DE 60020184T DE 60020184 T DE60020184 T DE 60020184T DE 60020184 D1 DE60020184 D1 DE 60020184D1
- Authority
- DE
- Germany
- Prior art keywords
- lasers
- light
- emitting diodes
- embedded heterostructure
- heterostructure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/263,654 US6327288B1 (en) | 1999-03-05 | 1999-03-05 | Buried heterostructure for lasers and light emitting diodes |
US263654 | 1999-03-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60020184D1 true DE60020184D1 (de) | 2005-06-23 |
DE60020184T2 DE60020184T2 (de) | 2006-01-19 |
Family
ID=23002693
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60020184T Expired - Lifetime DE60020184T2 (de) | 1999-03-05 | 2000-02-04 | Eingebetteter Heterostruktur für Laser und lichtemittierenden Dioden |
Country Status (4)
Country | Link |
---|---|
US (2) | US6327288B1 (de) |
EP (1) | EP1037344B1 (de) |
JP (1) | JP2000261097A (de) |
DE (1) | DE60020184T2 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3996408B2 (ja) * | 2002-02-28 | 2007-10-24 | ローム株式会社 | 半導体発光素子およびその製造方法 |
US6724795B2 (en) * | 2002-05-10 | 2004-04-20 | Bookham Technology, Plc | Semiconductor laser |
US20090233414A1 (en) * | 2005-10-20 | 2009-09-17 | Shah Pankaj B | Method for fabricating group III-nitride high electron mobility transistors (HEMTs) |
US7848379B2 (en) * | 2006-01-25 | 2010-12-07 | Sensor Electronic Technology, Inc. | LED-based optical pumping for laser light generation |
US8064493B2 (en) * | 2009-06-12 | 2011-11-22 | Binoptics Corporation | Surface emitting photonic device |
US9190560B2 (en) | 2010-05-18 | 2015-11-17 | Agency For Science Technology And Research | Method of forming a light emitting diode structure and a light diode structure |
KR101678967B1 (ko) | 2010-10-07 | 2016-11-24 | 삼성전자 주식회사 | 반도체 기판의 도광층 형성방법 |
US9917414B2 (en) * | 2015-07-15 | 2018-03-13 | International Business Machines Corporation | Monolithic nanophotonic device on a semiconductor substrate |
US9728483B2 (en) * | 2015-12-09 | 2017-08-08 | Honeywell Federal Manufacturing & Technologies, Llc | Method of forming an integrated circuit with heat-mitigating diamond-filled channels |
CN114825031B (zh) * | 2022-06-24 | 2022-09-23 | 度亘激光技术(苏州)有限公司 | 半导体激光器及其制备方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60235485A (ja) | 1984-05-08 | 1985-11-22 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置の製造方法 |
JPS62212187A (ja) | 1986-03-14 | 1987-09-18 | Hiromu Matsushita | コピ−した粉末トナ−を多種の素材に転写する方法 |
JPS62213187A (ja) | 1986-03-14 | 1987-09-19 | Toshiba Corp | 半導体発光素子およびその製造方法 |
JPH04127521A (ja) | 1990-09-19 | 1992-04-28 | Fujitsu Ltd | 半導体基板の製造方法 |
DE69406049T2 (de) | 1993-06-04 | 1998-04-16 | Sharp Kk | Lichtmittierende Halbleitervorrichtung mit einer dritten Begrenzungsschicht |
JP3060973B2 (ja) | 1996-12-24 | 2000-07-10 | 日本電気株式会社 | 選択成長法を用いた窒化ガリウム系半導体レーザの製造方法及び窒化ガリウム系半導体レーザ |
EP2234142A1 (de) | 1997-04-11 | 2010-09-29 | Nichia Corporation | Nitridhalbleitersubstrat |
-
1999
- 1999-03-05 US US09/263,654 patent/US6327288B1/en not_active Expired - Fee Related
-
2000
- 2000-02-04 EP EP00102446A patent/EP1037344B1/de not_active Expired - Lifetime
- 2000-02-04 DE DE60020184T patent/DE60020184T2/de not_active Expired - Lifetime
- 2000-03-01 JP JP2000055744A patent/JP2000261097A/ja not_active Ceased
-
2001
- 2001-10-26 US US10/047,504 patent/US6849474B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6327288B1 (en) | 2001-12-04 |
EP1037344B1 (de) | 2005-05-18 |
JP2000261097A (ja) | 2000-09-22 |
US20020075925A1 (en) | 2002-06-20 |
DE60020184T2 (de) | 2006-01-19 |
US6849474B2 (en) | 2005-02-01 |
EP1037344A1 (de) | 2000-09-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |