DE60002591T2 - Halbleiterlaserdiode mit verteiltem reflektor - Google Patents
Halbleiterlaserdiode mit verteiltem reflektor Download PDFInfo
- Publication number
- DE60002591T2 DE60002591T2 DE60002591T DE60002591T DE60002591T2 DE 60002591 T2 DE60002591 T2 DE 60002591T2 DE 60002591 T DE60002591 T DE 60002591T DE 60002591 T DE60002591 T DE 60002591T DE 60002591 T2 DE60002591 T2 DE 60002591T2
- Authority
- DE
- Germany
- Prior art keywords
- optical device
- holes
- distributed reflector
- active layer
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title description 2
- 230000003287 optical effect Effects 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 3
- 230000003014 reinforcing effect Effects 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000003491 array Methods 0.000 abstract 1
- 238000001228 spectrum Methods 0.000 description 6
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/11—Comprising a photonic bandgap structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1203—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers over only a part of the length of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Optical Communication System (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9921445A GB2354110A (en) | 1999-09-08 | 1999-09-08 | Ridge waveguide lasers |
| GB9921445 | 1999-09-08 | ||
| PCT/GB2000/003483 WO2001018924A1 (en) | 1999-09-08 | 2000-09-08 | Semiconductor laser diode with a distributed reflector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60002591D1 DE60002591D1 (de) | 2003-06-12 |
| DE60002591T2 true DE60002591T2 (de) | 2004-04-01 |
Family
ID=10860715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60002591T Expired - Fee Related DE60002591T2 (de) | 1999-09-08 | 2000-09-08 | Halbleiterlaserdiode mit verteiltem reflektor |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1214764B1 (enExample) |
| AT (1) | ATE239990T1 (enExample) |
| AU (1) | AU7028000A (enExample) |
| DE (1) | DE60002591T2 (enExample) |
| GB (1) | GB2354110A (enExample) |
| WO (1) | WO2001018924A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2385943B (en) | 1999-03-05 | 2003-11-05 | Nanovis Llc | Mach-Zehnder interferometer with aperiodic grating |
| AU2003239934A1 (en) * | 2002-06-03 | 2003-12-19 | R.J. Mears Llc | Fabry-perot laser with wavelength control |
| JP2004172506A (ja) | 2002-11-22 | 2004-06-17 | Sony Corp | 半導体レーザ素子 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59205787A (ja) * | 1983-05-09 | 1984-11-21 | Nec Corp | 単一軸モ−ド半導体レ−ザ |
| JPS6393187A (ja) * | 1986-10-08 | 1988-04-23 | Sharp Corp | 分布帰還型半導体レ−ザ |
| ES2061311T3 (es) * | 1987-01-21 | 1994-12-01 | At & T Corp | Laser hibrido para comunicaciones opticas. |
| JP2749038B2 (ja) * | 1987-07-31 | 1998-05-13 | 株式会社日立製作所 | 波長可変半導体レーザ |
| US4856017A (en) * | 1987-12-22 | 1989-08-08 | Ortel Corporation | Single frequency high power semiconductor laser |
| JPH02143581A (ja) * | 1988-11-25 | 1990-06-01 | Furukawa Electric Co Ltd:The | 半導体レーザ素子 |
| CA2018928C (en) * | 1989-06-14 | 1994-07-26 | Akihiko Oka | Semiconductor laser device |
| JPH0738204A (ja) * | 1993-07-20 | 1995-02-07 | Mitsubishi Electric Corp | 半導体光デバイス及びその製造方法 |
| FR2734097B1 (fr) * | 1995-05-12 | 1997-06-06 | Thomson Csf | Laser a semiconducteurs |
| JPH1098235A (ja) * | 1996-08-01 | 1998-04-14 | Pioneer Electron Corp | 無再成長分布帰還リッジ型半導体レーザ及びその製造方法 |
| FR2765347B1 (fr) * | 1997-06-26 | 1999-09-24 | Alsthom Cge Alcatel | Reflecteur de bragg en semi-conducteur et procede de fabrication |
-
1999
- 1999-09-08 GB GB9921445A patent/GB2354110A/en not_active Withdrawn
-
2000
- 2000-09-08 AT AT00958866T patent/ATE239990T1/de not_active IP Right Cessation
- 2000-09-08 DE DE60002591T patent/DE60002591T2/de not_active Expired - Fee Related
- 2000-09-08 WO PCT/GB2000/003483 patent/WO2001018924A1/en not_active Ceased
- 2000-09-08 AU AU70280/00A patent/AU7028000A/en not_active Abandoned
- 2000-09-08 EP EP00958866A patent/EP1214764B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| AU7028000A (en) | 2001-04-10 |
| EP1214764A1 (en) | 2002-06-19 |
| ATE239990T1 (de) | 2003-05-15 |
| DE60002591D1 (de) | 2003-06-12 |
| GB2354110A (en) | 2001-03-14 |
| GB9921445D0 (enExample) | 1999-11-10 |
| WO2001018924A1 (en) | 2001-03-15 |
| EP1214764B1 (en) | 2003-05-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |